APTGL90SK120T1G Buck chopper Trench + Field Stop IGBT4 Power module 5 6 Q1 Application AC and DC motor control Switched Mode Power Supplies 11 CR1 7 8 3 4 NTC CR2 1 2 VCES = 1200V IC = 90A @ Tc = 80°C 12 Features Trench + Field Stop IGBT 4 Technology - Low voltage drop - Low leakage current - Low switching losses - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated - Symmetrical design Kelvin emitter for easy drive Very low stray inductance High level of integration Internal thermistor for temperature monitoring Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS Compliant Pins 1/2 ; 3/4 ; 5/6 must be shorted together Absolute maximum ratings IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area Tc = 25°C Tc = 80°C Tc = 25°C Tc = 25°C Tj = 150°C Max ratings 1200 110 90 150 ±20 385 150A @ 1150V Unit V A V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-6 APTGL90SK120T1G – Rev 1 October, 2012 Symbol VCES APTGL90SK120T1G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25°C VGE = 15V IC = 75A Tj = 150°C VGE = VCE , IC = 3mA VGE = 20V, VCE = 0V Min Typ 5.0 1.85 2.25 5.8 Min Typ Max Unit 250 2.25 µA 6.5 600 V nA Max Unit V Dynamic Characteristics Symbol Characteristic Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance QG Gate charge Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Isc Short Circuit data Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE= ±15V ; VCE=600V IC=75A Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 75A RG = 2.2 Inductive Switching (150°C) VGE = ±15V VBus = 600V IC = 75A RG = 2.2 TJ = 25°C VGE = ±15V VBus = 600V TJ = 150°C IC = 75A TJ = 25°C RG = 2.2 TJ = 150°C VGE ≤15V ; VBus = 900V tp ≤10µs ; Tj = 150°C 4.4 0.29 0.24 nF 0.57 µC 130 20 300 ns 45 150 35 ns 350 80 3.4 8.5 4.2 7.2 mJ 300 A mJ Chopper diode ratings and characteristics Characteristic Test Conditions Min 1200 Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Er Reverse Recovery Energy VR=1200V IF = 75A VGE = 0V IF = 75A VR = 600V di/dt =1900A/µs Typ Tj = 25°C Tc = 80°C Tj = 25°C Tj = 150°C 90 1.7 1.65 Tj = 25°C 155 Tj = 150°C Tj = 25°C 300 7.3 Tj = 150°C Tj = 25°C Tj = 150°C 15.2 2.6 5.5 www.microsemi.com Max 250 2.2 Unit V µA A V ns µC mJ 2-6 APTGL90SK120T1G – Rev 1 October, 2012 Symbol VRRM IRM IF APTGL90SK120T1G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Typ IGBT Diode To heatsink M4 4000 -40 -40 -40 2 Max 0.39 0.62 Unit °C/W V 175 125 100 3 80 °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT R25 Typ 50 5 3952 4 Max Unit k % K % T: Thermistor temperature 1 1 RT: Thermistor value at T exp B25 / 85 T T 25 See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com www.microsemi.com 3-6 APTGL90SK120T1G – Rev 1 October, 2012 SP1 Package outline (dimensions in mm) APTGL90SK120T1G Typical Performance Curve Output Characteristics (VGE=15V) 150 Output Characteristics 150 VGE=19V TJ=25°C 100 100 TJ=150°C 75 VGE=15V 75 50 50 25 25 0 VGE=9V 0 0 1 2 VCE (V) 3 4 0 Transfert Characteristics 150 20 E (mJ) 75 2 VCE (V) 3 VCE = 600V VGE = 15V RG = 2.2 Ω TJ = 150°C 25 100 1 4 Energy losses vs Collector Current 30 TJ=25°C 125 IC (A) TJ = 150°C 125 IC (A) IC (A) 125 Eon 15 Eoff 10 50 TJ=150°C 25 5 0 0 5 6 7 8 9 10 11 12 Er Eon 0 13 25 50 75 100 125 150 IC (A) VGE (V) Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 20 160 Eon VCE = 600V VGE =15V IC = 75A TJ = 150°C 12 120 IC (A) E (mJ) 16 Eoff 8 Er 80 VGE=15V TJ=150°C RG=2.2 Ω 40 4 0 0 0 5 10 15 20 Gate Resistance (ohms) 25 0 300 600 900 VCE (V) 1200 1500 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.3 0.2 0.9 IGBT 0.7 0.5 0.3 0.1 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4-6 APTGL90SK120T1G – Rev 1 October, 2012 Thermal Impedance (°C/W) 0.4 APTGL90SK120T1G Forward Characteristic of diode 150 VCE=600V D=50% RG=2.2 Ω TJ=150°C Tc=75°C 80 60 40 IF, Forward Current (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 100 ZCS 20 Hard switching ZVS 100 75 50 40 TJ=150°C 25 0 0 20 TJ=25°C 125 60 80 100 0 120 0.5 1 1.5 2 2.5 VF, Anode to Cathode Voltage (V) IC (A) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.6 0.9 0.5 0.7 0.4 Diode 0.5 0.3 0.2 0.1 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds www.microsemi.com 5-6 APTGL90SK120T1G – Rev 1 October, 2012 Thermal Impedance (°C/W) 0.7 APTGL90SK120T1G DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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