APTGL475U120D4G Single switch Trench + Field Stop IGBT4 Power Module VCES = 1200V IC = 475A @ Tc = 80°C Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control 1 3 Features Trench + Field Stop IGBT 4 Technology - Low voltage drop - Low leakage current - Low switching losses - Soft recovery parallel diodes - Low diode VF - RBSOA and SCSOA rated 5 2 Kelvin emitter for easy drive M6 connectors for power M4 connectors for signal High level of integration Benefits Stable temperature behavior Very rugged Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat RoHS Compliant Absolute maximum ratings Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA TC = 25°C Max ratings 1200 610 475 1200 ±20 2082 Tj = 125°C [email protected] TC = 25°C TC = 80°C TC = 25°C Reverse Bias Safe Operating Area Unit V A V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-6 APTGL475U120D4G – Rev 1 October 2012 Symbol VCES APTGL475U120D4G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Zero Gate Voltage Collector Current ICES VCE(sat) Collector Emitter Saturation Voltage VGE(th) Gate Threshold Voltage Test Conditions VGE = 0V ; VCE = 1200V VGE =15V Tj = 25°C IC = 400A Tj = 150°C VGE = VCE, IC = 10 mA Min Typ 5 1.8 2.2 5.8 Test Conditions Min Typ Max 4 2.2 Unit mA 6.5 V Max Unit V Dynamic Characteristics Symbol Characteristic Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance QG Gate charge Td(on) Tr Td(off) Tf VGE= -8V / 15V ; VCE=600V IC=400A Inductive Switching (25°C) VGE = ±15V VCE = 600V IC = 400A RG = 1.8 Inductive Switching (150°C) VGE = ±15V VCE = 600V IC = 400A RG = 1.8 VGE = ±15V TJ = 150°C VCE = 600V IC = 400A TJ = 150°C RG = 1.8 VGE ≤15V ; VBus = 900V tp ≤10µs ; Tj = 150°C Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Td(on) Turn-on Delay Time Tr Rise Time Turn-off Delay Time Fall Time Td(off) Tf VGE = 0V VCE = 25V f = 1MHz Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Isc Short Circuit data 24.6 1.62 1.38 nF 2.3 µC 160 30 340 ns 80 170 40 450 170 ns 44 mJ 44 mJ 1600 A Diode ratings and characteristics IRRM IF Maximum Reverse Leakage Current Test Conditions VR=1200V DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Err Reverse Recovery Energy IF = 400A VGE = 0V IF = 400A VR = 600V di/dt = 7000A/µs www.microsemi.com Min 1200 Typ Tj = 25°C Tj = 150°C TC = 80°C 400 Tj = 25°C 1.7 Tj = 150°C 1.65 Tj = 25°C 155 Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C 300 37.2 78 16 32 Max 250 2000 Unit V µA A 2.2 V ns µC mJ 2-6 APTGL475U120D4G – Rev 1 October 2012 Symbol Characteristic VRRM Maximum Repetitive Reverse Voltage APTGL475U120D4G Thermal and package characteristics Symbol Characteristic Min RthJC Junction to Case Thermal Resistance VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz IGBT Diode Operating junction temperature range Storage Temperature Range Operating Case Temperature Torque Mounting torque Wt Package Weight M6 M4 4000 -40 -40 -40 3 1 Typ Max 0.072 0.14 Unit °C/W V 175 125 125 5 2 350 °C N.m g www.microsemi.com 3-6 APTGL475U120D4G – Rev 1 October 2012 D4 Package outline (dimensions in mm) APTGL475U120D4G Typical Performance Curve Output Characteristics (VGE=15V) 800 Output Characteristics 800 TJ = 150°C VGE=19V 600 TJ=25°C VGE=15V TJ=150°C IC (A) IC (A) 600 400 400 VGE=9V 200 200 0 0 0 1 2 3 4 0 1 VCE (V) Transfert Characteristics 800 VCE = 600V VGE = 15V RG = 1.8 Ω TJ = 150°C 140 120 600 E (mJ) IC (A) 100 400 200 4 Eon Eoff 80 60 Er 40 TJ=150°C 3 Energy losses vs Collector Current 160 TJ=25°C 2 VCE (V) 20 0 0 5 6 7 8 9 10 11 12 0 13 200 Switching Energy Losses vs Gate Resistance 600 800 Reverse Bias Safe Operating Area 80 960 VCE = 600V VGE =15V IC = 400A TJ = 150°C 60 800 Eon 640 IC (A) 70 E (mJ) 400 IC (A) VGE (V) Eoff 50 40 480 320 30 VGE=15V TJ=150°C RG=1.8 Ω 160 Er 20 0 0 2.5 5 7.5 Gate Resistance (ohms) 10 0 300 600 900 VCE (V) 1200 1500 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.06 0.04 IGBT 0.7 0.5 0.3 0.02 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4-6 APTGL475U120D4G – Rev 1 October 2012 Thermal Impedance (°C/W) 0.08 APTGL475U120D4G Forward Characteristic of diode 800 VCE=600V D=50% RG=1.8 Ω TJ=150°C Tc=75°C 150 120 600 IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 180 90 ZVS 60 30 200 ZCS Hard switching 400 TJ=150°C TJ=25°C 0 0 0 120 240 360 480 600 0 0.4 IC (A) 0.8 1.2 1.6 VF (V) 2 2.4 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.14 0.12 0.1 0.08 0.06 Diode 0.9 0.7 0.5 0.3 0.04 0.02 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds www.microsemi.com 5-6 APTGL475U120D4G – Rev 1 October 2012 Thermal Impedance (°C/W) 0.16 APTGL475U120D4G DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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