APTGL475U120D4G-Rev1.pdf

APTGL475U120D4G
Single switch
Trench + Field Stop IGBT4
Power Module
VCES = 1200V
IC = 475A @ Tc = 80°C
Application
 Welding converters
 Switched Mode Power Supplies
 Uninterruptible Power Supplies
 Motor control
1
3
Features
 Trench + Field Stop IGBT 4 Technology
- Low voltage drop
- Low leakage current
- Low switching losses
- Soft recovery parallel diodes
- Low diode VF
- RBSOA and SCSOA rated
5
2




Kelvin emitter for easy drive
M6 connectors for power
M4 connectors for signal
High level of integration
Benefits
 Stable temperature behavior
 Very rugged
 Direct mounting to heatsink (isolated package)
 Low junction to case thermal resistance
 Easy paralleling due to positive TC of VCEsat
 RoHS Compliant
Absolute maximum ratings
Parameter
Collector - Emitter Breakdown Voltage
IC
Continuous Collector Current
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
RBSOA
TC = 25°C
Max ratings
1200
610
475
1200
±20
2082
Tj = 125°C
[email protected]
TC = 25°C
TC = 80°C
TC = 25°C
Reverse Bias Safe Operating Area
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note APT0502 on www.microsemi.com
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1-6
APTGL475U120D4G – Rev 1 October 2012
Symbol
VCES
APTGL475U120D4G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Zero Gate Voltage Collector Current
ICES
VCE(sat)
Collector Emitter Saturation Voltage
VGE(th)
Gate Threshold Voltage
Test Conditions
VGE = 0V ; VCE = 1200V
VGE =15V
Tj = 25°C
IC = 400A
Tj = 150°C
VGE = VCE, IC = 10 mA
Min
Typ
5
1.8
2.2
5.8
Test Conditions
Min
Typ
Max
4
2.2
Unit
mA
6.5
V
Max
Unit
V
Dynamic Characteristics
Symbol Characteristic
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
QG
Gate charge
Td(on)
Tr
Td(off)
Tf
VGE= -8V / 15V ; VCE=600V
IC=400A
Inductive Switching (25°C)
VGE = ±15V
VCE = 600V
IC = 400A
RG = 1.8
Inductive Switching (150°C)
VGE = ±15V
VCE = 600V
IC = 400A
RG = 1.8
VGE = ±15V
TJ = 150°C
VCE = 600V
IC = 400A
TJ = 150°C
RG = 1.8
VGE ≤15V ; VBus = 900V
tp ≤10µs ; Tj = 150°C
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
Turn-on Delay Time
Tr
Rise Time
Turn-off Delay Time
Fall Time
Td(off)
Tf
VGE = 0V
VCE = 25V
f = 1MHz
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Isc
Short Circuit data
24.6
1.62
1.38
nF
2.3
µC
160
30
340
ns
80
170
40
450
170
ns
44
mJ
44
mJ
1600
A
Diode ratings and characteristics
IRRM
IF
Maximum Reverse Leakage Current
Test Conditions
VR=1200V
DC Forward Current
VF
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Err
Reverse Recovery Energy
IF = 400A
VGE = 0V
IF = 400A
VR = 600V
di/dt = 7000A/µs
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Min
1200
Typ
Tj = 25°C
Tj = 150°C
TC = 80°C
400
Tj = 25°C
1.7
Tj = 150°C
1.65
Tj = 25°C
155
Tj = 150°C
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
300
37.2
78
16
32
Max
250
2000
Unit
V
µA
A
2.2
V
ns
µC
mJ
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APTGL475U120D4G – Rev 1 October 2012
Symbol Characteristic
VRRM Maximum Repetitive Reverse Voltage
APTGL475U120D4G
Thermal and package characteristics
Symbol Characteristic
Min
RthJC
Junction to Case Thermal Resistance
VISOL
TJ
TSTG
TC
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
IGBT
Diode
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Torque
Mounting torque
Wt
Package Weight
M6
M4
4000
-40
-40
-40
3
1
Typ
Max
0.072
0.14
Unit
°C/W
V
175
125
125
5
2
350
°C
N.m
g
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3-6
APTGL475U120D4G – Rev 1 October 2012
D4 Package outline (dimensions in mm)
APTGL475U120D4G
Typical Performance Curve
Output Characteristics (VGE=15V)
800
Output Characteristics
800
TJ = 150°C
VGE=19V
600
TJ=25°C
VGE=15V
TJ=150°C
IC (A)
IC (A)
600
400
400
VGE=9V
200
200
0
0
0
1
2
3
4
0
1
VCE (V)
Transfert Characteristics
800
VCE = 600V
VGE = 15V
RG = 1.8 Ω
TJ = 150°C
140
120
600
E (mJ)
IC (A)
100
400
200
4
Eon
Eoff
80
60
Er
40
TJ=150°C
3
Energy losses vs Collector Current
160
TJ=25°C
2
VCE (V)
20
0
0
5
6
7
8
9
10
11
12
0
13
200
Switching Energy Losses vs Gate Resistance
600
800
Reverse Bias Safe Operating Area
80
960
VCE = 600V
VGE =15V
IC = 400A
TJ = 150°C
60
800
Eon
640
IC (A)
70
E (mJ)
400
IC (A)
VGE (V)
Eoff
50
40
480
320
30
VGE=15V
TJ=150°C
RG=1.8 Ω
160
Er
20
0
0
2.5
5
7.5
Gate Resistance (ohms)
10
0
300
600
900
VCE (V)
1200
1500
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.06
0.04
IGBT
0.7
0.5
0.3
0.02
0.1
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
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4-6
APTGL475U120D4G – Rev 1 October 2012
Thermal Impedance (°C/W)
0.08
APTGL475U120D4G
Forward Characteristic of diode
800
VCE=600V
D=50%
RG=1.8 Ω
TJ=150°C
Tc=75°C
150
120
600
IF (A)
Fmax, Operating Frequency (kHz)
Operating Frequency vs Collector Current
180
90
ZVS
60
30
200
ZCS
Hard
switching
400
TJ=150°C
TJ=25°C
0
0
0
120
240
360
480
600
0
0.4
IC (A)
0.8
1.2
1.6
VF (V)
2
2.4
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.14
0.12
0.1
0.08
0.06
Diode
0.9
0.7
0.5
0.3
0.04
0.02
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration in Seconds
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5-6
APTGL475U120D4G – Rev 1 October 2012
Thermal Impedance (°C/W)
0.16
APTGL475U120D4G
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without any notice. This product has been subject to limited testing and should not be used in conjunction with lifesupport or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi
disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or
warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other
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application in which the failure of the Seller's Product could create a situation where personal injury, death or property
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Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive
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APTGL475U120D4G – Rev 1 October 2012
Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with
Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the
new proposed specific part.