APTGT50DH120T3G Asymmetrical - Bridge Fast Trench + Field Stop IGBT3 Power Module 13 14 Application Welding converters Switched Mode Power Supplies Switched Reluctance Motor Drives Q1 CR1 CR3 18 22 7 23 8 19 Q4 CR2 CR4 4 3 29 30 31 15 32 20 19 18 23 22 29 16 30 15 31 14 32 3 4 7 8 Kelvin emitter for easy drive Very low stray inductance Internal thermistor for temperature monitoring High level of integration Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile Easy paralleling due to positive TC of VCEsat RoHS Compliant 13 2 Features Fast Trench + Field Stop IGBT3 Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated 16 R1 28 27 26 25 VCES = 1200V IC = 50A @ Tc = 80°C 10 11 12 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage TC = 25°C TC = 80°C TC = 25°C Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25°C TJ = 125°C Max ratings 1200 75 50 100 ±20 277 100A @ 1150V Unit V A V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-6 APTGT50DH120T3G – Rev1 October, 2012 Absolute maximum ratings APTGT50DH120T3G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions Min VGE = 0V, VCE = 1200V Tj = 25°C VGE =15V IC = 50A Tj = 125°C VGE = VCE , IC = 2mA VGE = 20V, VCE = 0V 1.4 5.0 Typ 1.7 2.0 5.8 Max Unit 250 2.1 µA 6.5 400 V nA Max Unit V Dynamic Characteristics Symbol Characteristic Input Capacitance Cies Crss Reverse Transfer Capacitance QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Isc Short Circuit data Test Conditions VGE = 0V,VCE = 25V f = 1MHz VGE=±15V, IC=50A VCE=600V Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 50A RG = 18 Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 50A RG = 18 VGE = ±15V Tj = 125°C VBus = 600V IC = 50A Tj = 125°C RG = 18 VGE ≤15V ; VBus = 900V tp ≤ 10µs ; Tj = 125°C Min Typ 3600 160 pF 0.5 µC 90 30 420 ns 70 90 50 520 ns 90 5 mJ 5.5 200 A Diode ratings and characteristics (CR2 & CR3) VRRM IRM Test Conditions Min Maximum Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Er Reverse Recovery Energy Typ Max 1200 Maximum Peak Repetitive Reverse Voltage V VR=1200V Tj = 25°C Tj = 125°C IF = 50A Tc = 80°C Tj = 25°C Tj = 125°C Tj = 25°C 50 1.6 1.6 170 Tj = 125°C Tj = 25°C 280 5.6 Tj = 125°C Tj = 25°C Tj = 125°C 9.9 2.2 4.1 IF = 50A VR = 600V di/dt =1900A/µs Unit 250 500 µA A 2.1 V ns µC mJ CR1 & CR4 are IGBT protection diodes only www.microsemi.com 2-6 APTGT50DH120T3G – Rev1 October, 2012 Symbol Characteristic APTGT50DH120T3G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Typ IGBT Diode To Heatsink M5 4000 -40 -40 -40 2 Max 0.45 0.72 Unit °C/W V 150 125 100 3 110 °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT R25 Typ 50 5 3952 4 Max Unit k % K % T: Thermistor temperature 1 1 RT: Thermistor value at T exp B25 / 85 T T 25 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com www.microsemi.com 3-6 APTGT50DH120T3G – Rev1 October, 2012 SP3 Package outline (dimensions in mm) APTGT50DH120T3G Typical Performance Curve Output Characteristics (VGE=15V) Output Characteristics 100 100 TJ = 125°C TJ=25°C 80 80 VGE=17V VGE=13V 60 VGE=15V 40 40 VGE=9V 20 20 60 IC (A) IC (A) TJ=125°C 0 0 0 0.5 1 1.5 2 VCE (V) 3 0 3.5 12 TJ=25°C 80 8 E (mJ) TJ=125°C 40 3 4 6 Eon Eon Eoff Er 4 TJ=125°C 20 2 0 0 5 6 7 8 9 10 11 0 12 20 Switching Energy Losses vs Gate Resistance 12 8 60 80 100 Reverse Bias Safe Operating Area 120 VCE = 600V VGE =15V IC = 50A TJ = 125°C 10 40 IC (A) VGE (V) Eon 100 80 Eoff IC (A) E (mJ) 2 VCE (V) VCE = 600V VGE = 15V RG = 18Ω TJ = 125°C 10 60 1 Energy losses vs Collector Current Transfert Characteristics 100 IC (A) 2.5 6 4 60 40 Er 2 VGE=15V TJ=125°C RG=18Ω 20 0 0 0 10 20 30 40 50 60 Gate Resistance (ohms) 70 80 0 300 600 900 VCE (V) 1200 1500 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.4 IGBT 0.9 0.7 0.3 0.5 0.2 0.1 0.3 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4-6 APTGT50DH120T3G – Rev1 October, 2012 Thermal Impedance (°C/W) 0.5 APTGT50DH120T3G Forward Characteristic of diode 100 VCE=600V D=50% RG=18Ω TJ=125°C TC=75°C 60 50 ZCS 40 80 IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 70 ZVS 30 60 TJ=125°C 40 20 10 hard switching 0 10 20 TJ=125°C 20 TJ=25°C 0 30 40 50 IC (A) 60 70 0 80 0.5 1 1.5 VF (V) 2 2.5 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.7 0.6 0.5 0.9 0.4 0.5 0.3 0.3 0.2 0.1 Diode 0.7 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 5-6 APTGT50DH120T3G – Rev1 October, 2012 Thermal Impedance (°C/W) 0.8 APTGT50DH120T3G DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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