APTGT150A60T3AG Phase leg Trench + Field Stop IGBT3 Power Module 29 30 31 32 Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control 13 4 3 26 27 28 22 23 25 Features Trench + Field Stop IGBT3 Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated Very low stray inductance Kelvin emitter for easy drive Internal thermistor for temperature monitoring High level of integration AlN substrate for improved thermal performance R1 8 7 16 28 27 26 25 18 19 20 14 20 19 18 23 22 29 16 30 15 31 14 32 13 2 3 4 7 8 VCES = 600V IC = 150A @ Tc = 100°C 10 11 12 Pins 29/30/31/32 must be shorted together Pins 26/27/28/22/23/25 must be shorted together to achieve a phase leg Pins 16/18/19/20 must be shorted together Benefits Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile Easy paralleling due to positive TC of VCEsat RoHS Compliant Absolute maximum ratings Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA TC = 25°C TC = 100°C TC = 25°C TC = 25°C Reverse Bias Safe Operating Area Tj = 150°C Max ratings 600 225 150 300 ±20 600 Unit V A V W 300A @ 550V These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTGT150A60T3AG – Rev 1 October, 2012 Symbol VCES APTGT150A60T3AG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions Min VGE = 0V, VCE = 600V Tj = 25°C VGE =15V IC = 150A Tj = 150°C VGE = VCE , IC = 1.5 mA VGE = 20V, VCE = 0V 5.0 Typ 1.5 1.7 5.8 Max Unit 250 1.9 µA 6.5 400 V nA Max Unit V Dynamic Characteristics Symbol Cies Coes Cres QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE= ±15V ; VCE=300V IC=150A Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 150A RG = 3.3 Inductive Switching (150°C) VGE = ±15V VBus = 300V IC = 150A RG = 3.3 Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Eon Turn on Energy Eoff Turn off Energy Isc Short Circuit data Min Typ 9200 580 270 pF 1.6 µC 115 45 225 ns 55 130 50 ns 300 70 0.85 1.5 4.1 5.3 VGE = ±15V Tj = 25°C VBus = 300V Tj = 150°C IC = 150A Tj = 25°C RG = 3.3 Tj = 150°C VGE ≤15V ; VBus = 360V tp ≤ 6µs ; Tj = 150°C mJ mJ 750 A Reverse diode ratings and characteristics IRM IF Maximum Reverse Leakage Current Test Conditions VR = 600V DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Er Reverse Recovery Energy Min 600 Tj = 25°C Tj = 150°C IF = 150A VR = 300V di/dt =2800A/µs www.microsemi.com Max 150 400 Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C 150 1.6 1.5 100 150 7.2 Tj = 150°C Tj = 25°C Tj = 150°C 15.2 1.7 3.6 Tc = 100°C IF = 150A VGE = 0V Typ Unit V µA A 2 V ns µC mJ 2–6 APTGT150A60T3AG – Rev 1 October, 2012 Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage APTGT150A60T3AG Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Typ IGBT Diode To heatsink M4 4000 -40 -40 -40 2 Max 0.25 0.42 Unit °C/W V 175 125 100 3 110 °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT R25 Typ 50 5 3952 4 Max Unit k % K % T: Thermistor temperature 1 1 RT: Thermistor value at T exp B25 / 85 T T 25 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com www.microsemi.com 3–6 APTGT150A60T3AG – Rev 1 October, 2012 SP3 Package outline (dimensions in mm) APTGT150A60T3AG Typical Performance Curve Output Characteristics (VGE=15V) Output Characteristics 300 300 TJ=25°C TJ = 150°C VGE=19V 250 250 150 VGE=15V 150 100 100 50 50 VGE=9V TJ=25°C 0 0 0.5 1 1.5 VCE (V) 0 2 2.5 0 3 10 TJ=25°C 250 E (mJ) 150 TJ=125°C TJ=25°C 6 7 Er 4 8 9 0 10 11 0 12 50 100 200 250 300 Reverse Bias Safe Operating Area Eon 300 Eoff Eoff 250 IF (A) E (mJ) 150 IC (A) 350 VCE = 300V VGE =15V IC = 150A TJ = 150°C 8 3.5 6 Switching Energy Losses vs Gate Resistance 10 3 Eoff VGE (V) 12 2.5 2 0 5 1.5 2 VCE (V) Eon TJ=150°C 50 1 VCE = 300V VGE = 15V RG = 3.3Ω TJ = 150°C 8 200 100 0.5 Energy losses vs Collector Current Transfert Characteristics 300 IC (A) VGE=13V 200 TJ=150°C IC (A) IC (A) TJ=125°C 200 6 4 150 100 Er 2 200 VGE=15V TJ=150°C RG=3.3Ω 50 Eon 0 0 0 5 10 15 20 Gate Resistance (ohms) 25 0 100 200 300 400 VCE (V) 500 600 700 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration IGBT 0.25 0.9 0.2 0.7 0.15 0.5 0.1 0.3 0.05 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds www.microsemi.com 4–6 APTGT150A60T3AG – Rev 1 October, 2012 Thermal Impedance (°C/W) 0.3 APTGT150A60T3AG Forward Characteristic of diode 300 ZVS 100 ZCS 80 VCE=300V D=50% RG=3.3Ω TJ=150°C 250 200 Tc=85°C IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 120 60 40 TJ=125°C 100 Hard switching 20 150 TJ=150°C 50 TJ=25°C 0 0 0 50 100 150 IC (A) 200 0 250 0.4 0.8 1.2 1.6 VF (V) 2 2.4 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Diode 0.4 0.3 0.2 0.9 0.7 0.5 0.3 0.1 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds www.microsemi.com 5–6 APTGT150A60T3AG – Rev 1 October, 2012 Thermal Impedance (°C/W) 0.5 APTGT150A60T3AG DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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