Cypress Semiconductor Qualification Report QTP# 99325 VERSION 1.0 January, 2000 5V Synchronous FIFOs – R42HDHA Technology, Fab 4 CY7C43683 16K x 36 Undirectional Synchronous FIFO w/ Bus Matching – 128 Pins TQFP CY7C43684 16K x 36 x 2 Bidirectional Synchronous FIFO w/ Bus Matching – 128 Pins TQFP CY7C43686 16K x 36 / x 18 x 2 Tri Bus FIFO – 128 Pins TQFP CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Ed Russell Reliability Director (408)432-7069 Cypress Semiconductor, Inc. 1 MEG Synchronous FIFO – R42HDHA Technology - Fab 4 Device: CY7C43684 Package: 128 lead TQFP QTP# 99325, V. 1.0 Page 6 of 6 January, 2000 PRODUCT DESCRIPTION (for qualification) Qualification Purpose: To qualify 7C43684, 1 Meg Sync. FIFO, R42HDHA Technology, Fab 4. Marketing Part #: CY7C43684 Device Description: 16K x 36 x 2, Sync FIFO, RAM42HDHA Technology Cypress Division: Data Communications Division (DCD) Overall Die (or Mask) REV Level (pre-requisite for qualification): Die Size (stepping): 249 mils x 279 mils Rev. A What ID markings on Die: 7C43684A TECHNOLOGY/FAB PROCESS DESCRIPTION - R42D w/ Hot Al Number of Metal Layers: 2 Metal Composition: Metal 1: 500Å TiW / 6000Å Al –5%Cu –/ 1200Å TiW Metal 2: 500Å TiW / 6000Å Al –5%Cu / 1200Å TiW Passivation Type and Materials: 7000Å SiO2 + 6000Å Si3N4 Number of transistors in device 6417696 Number of Gates in device 163,119 Free Phosphorus contents in top glass layer(%): 0% Generic Process Technology/Design Rule (µ-drawn): CMOS, Double Metal 0.42 µm Gate Oxide Material/Thickness (MOS): SiO2 / 110Å Name/Location of Die Fab (prime) Facility: Cypress Semiconductor - Bloomington, MN (fab 4) Die Fab Line ID/Wafer Process ID: Cypress Semiconductor-Bloomington, MN / R42HDHA PLASTIC PACKAGE/ASSEMBLY /MARK DESCRIPTION Mold Compound Name/Manufacturer: Sumitomo 7320 Package Outline, Type or Name: 128 Lead TQFP (Die Size 249 x 279) Mold Compound Tg, °C: 135°C Lead Frame material: Copper Lead Finish, composition: Solder Plated, Sn / Pb Die Attach Area Plating: Silver Die Attach Pad Size: 335 x 335 Die Attach Method: Silver Epoxy Die Attach Material: 84-1 LMIS R4 Wire Bond Method: Thermosonic Wire Material/Size: Thermal Resistance Theta JA 56°C/W Assembly Line Process Flow: 49-1001 Name/Location of Assembly (prime) facility: Anam, Korea Note: Please contact a Cypress Representative for other packages availability Gold / 1.3 mil Cypress Semiconductor, Inc. 1 MEG Synchronous FIFO – R42HDHA Technology - Fab 4 Device: CY7C43684 Package: 128 lead TQFP QTP# 99325, V. 1.0 Page 6 of 6 January, 2000 RELIABILITY TESTS PERFORMED Stress/Test Test Condition (Temp/Bias) Result P/F High Temperature Operating Life Early Failure Rate Dynamic Operating Condition, Vcc = 6.5V, 135°C P High Accelerated Saturation Test (HAST) 140°C, 85%RH, 5.5V Precondition: JESD22 Moisture Sensitivity Level 3 (192 Hrs, 30C/60%RH) P Electrostatic Discharge MIL-STD-883, Method 3015.7 4,400V Cypress Spec. 25-00020 1000V Human Body Model (ESD-HBM) Electrostatic Discharge Charge Device Model (ESD-CDM) Temperature Cycle MIL-STD-883C, Method 1010, Condition C, -65°C to 150°C Precondition: P JESD22 Moisture Sensitivity Level 3 192 Hrs., 30°C, 60%RH Latch-up Sensitivity In Accordance with JEDC 17. Cypress Spec. 01-00081 12V ± 200mA Pressure Cooker Test No bias, 121C, 100%RH P Cypress Semiconductor, Inc. 1 MEG Synchronous FIFO – R42HDHA Technology - Fab 4 Device: CY7C43684 Package: 128 lead TQFP QTP# 99325, V. 1.0 Page 6 of 6 January, 2000 RELIABILITY FAILURE RATE SUMMARY Stress/Test High Temperature Operating Life Early Failure Rate1 High Temperature Operating Life2,3 Long Term Failure Rate Device Tested/ Device Hours # Fails Activation Energy Thermal AF4 Failure Rate5 1004 0 N/A N/A 0 PPM 392,500 DHRs 0 0.7 170 14 FIT 1 A production burn-in of 48 Hrs at 135°C, 6.5V is required for the product. Assuming an ambient temperature of 55°C and a junction temperature rise of 15°C. 3 Chi-squared 60% estimations used to calculate the failure rate. 4 Thermal Acceleration Factor is calculated from the Arrhenius equation 2 E 1 1 AF = exp A - k T2 T1 where: EA =The Activation Energy of the defect mechanism. k = Boltzmann's constant = 8.62x10-5 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. 5 Long Term Failure Rate is based on R42HDHA Technology qualified in fab 4. QTP 98248. Cypress Semiconductor, Inc. 1 MEG Synchronous FIFO – R42HDHA Technology - Fab 4 Device: CY7C43684 Package: 128 lead TQFP QTP# 99325, V. 1.0 Page 6 of 6 January, 2000 RELIABILITY TEST DATA QTP#: 99325 DEVICE ASSY-LOC FABLOT# ASSYLOT# DURATION S/S REJ ==================== ======== ======== ============== ======== ==== === STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (135C, 6.5V) 7C43643AC-QAC KOREA-Q 4924189 619927955 48 501 FAIL MODE ================================ 0 7C43664AC-QAC KOREA-Q 4924189 619928058 48 503 0 ---------------------------------- ----------------------------------------------------------------------------STRESS: ESD-CHARGE DEVICE MODEL 1000v 7C43684AC-QAC KOREA-Q 4924189 619924084 COMP 3 0 --------------------------------------------------------------------------------------------------------------STRESS: ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015 (4400) 7C43684AC-QAC KOREA-Q 4924189 619924084 COMP 3 0 --------------------------------------------------------------------------------------------------------------STRESS: HI-ACCEL SATURATION TEST (130C/85%RH/5.5V), PRECOND. 192 HRS 30C/60%RH 7C43684AC-QAC KOREA-Q 4924189 619925738 128 48 0 7C43684AC-QAC KOREA-Q 4924189 619925738 S/RE-FLOW 48 0 --------------------------------------------------------------------------------------------------------------STRESS: PRESSURE COOKER TEST (121C, 100%RH) 7C43684AC-QAC KOREA-Q 4910451 619909326 168 48 0 --------------------------------------------------------------------------------------------------------------STRESS: TC COND. C, -65 TO 150C, PRECOND. 192 HRS 30C/60%RH (MSL 3) 7C43684AC-QAC KOREA-Q 4910451 619909326 300 48 0 7C43684AC-QAC KOREA-Q 4910451 619909326 1000 48 0 ---------------------------------------------------------------------------------------------------------------- Cypress Semiconductor, Inc. 1 MEG Synchronous FIFO – R42HDHA Technology - Fab 4 Device: CY7C43684 Package: 128 lead TQFP QTP# 99325, V. 1.0 Page 6 of 6 January, 2000 RELIABILITY TEST DATA QTP#: 982481 DEVICE ASSY-LOC FABLOT# ASSYLOT# ==================== ======== ======== ============== STRESS: STATIC LATCH-UP TESTING (125C / 7.5V) DURATION ======== S/S ==== REJ === FAIL MODE ================================ CY7C1049-VC SEOL-L 4750331 619800740 DATA 3 0 --------------------------------------------------------------------------------------------------------------STRESS: DYNAMIC LATCH-UP TESTING (11.2V) CY7C1049-VC SEOL-L 4750331 619800740 DATA 3 0 --------------------------------------------------------------------------------------------------------------STRESS: ESD-CHARGE DEVICE MODEL (1000V) CY7C1049-VC SEOL-L 4750331 619800740 COMP 3 0 --------------------------------------------------------------------------------------------------------------STRESS: ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015 (2200V) CY7C1049-VC SEOL-L 4750331 619800740 COMP 3 0 --------------------------------------------------------------------------------------------------------------STRESS: HI-ACCEL SATURATION TEST (140C, 5.5V), PRECOND. 168 HRS 85C/85%RH CY7C1049-VC SEOL-L 4750331 619800740 128 47 0 --------------------------------------------------------------------------------------------------------------STRESS: HIGH TEMP STEADY STATE LIFE TEST (150C, 5.5V) CY7C1049-VC SEOL-L 4750331 619800740 80 79 0 CY7C1049-VC SEOL-L 4750331 619800740 168 79 0 CY7C1049-VCB SEOL-L 4750364 619801747 168 80 0 CY7C1049-VCB SEOL-L 4750364 619801747 80 80 0 --------------------------------------------------------------------------------------------------------------STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (150C, 5.75V) CY7C1049-VC SEOL-L 4750331 619800740 80 385 0 CY7C1049-VC SEOL-L 4750331 619800740 500 385 0 CY7C1049-VCB SEOL-L 4750364 619801747 80 400 0 CY7C1049-VCB SEOL-L 4750364 619801747 500 400 0 --------------------------------------------------------------------------------------------------------------STRESS: READ & RECORD (150C, 5.75V) CY7C1049-VC SEOL-L 4750331 619800740 500 12 0 CY7C1049-VCB SEOL-L 4750364 619801747 500 12 0 --------------------------------------------------------------------------------------------------------------STRESS: TC COND. C, -65 TO 150C, PRECOND. 192 HRS 30C/60%RH (MSL 3) CY7C1049-VC SEOL-L 4750331 619800740 300 47 0 CY7C1049-VCB SEOL-L 4750364 619801747 300 48 0 CY7C1049-VCB SEOL-L 4752513 619802812L1 300 47 0 --------------------------------------------------------------------------------------------------------------- 1 QTP 99248, 4 Mag SRAM Product, R42HDHA Technology, Fab. 4.