Cypress Semiconductor Product Qualification Report QTP# 093502 VERSION 1.0 August 2009 EZ-Color™ Device Family S4AD-5 Technology, Fab5 CY8CLED02 EZ-Color™ HB LED Controller CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Fredrick Whitwer Staff Reliability Engineer (408) 943-2722 Mira Ben-Tzur Quality Engineering Director (408) 943-2675 Cypress Semiconductor 093502 V. 1.0 EZ-Color™ Device Family, S4AD-5, Fab5 Device: CY8CLED02 Page 2 of 10 August 2009 PRODUCT QUALIFICATION HISTORY Qual Report Description of Qualification Purpose Date Comp 060605 Qualify GSMC using PSoC Device Product Family on S4AD-5 Technology Aug 06 071104 Qualify PSoC 8C21000A Proton Device on S4AD-5 Technology, Fab5 Nov 07 093502 Qualify CY8CLED02 on S4AD-5 Technology, Fab 5 Aug 09 Cypress Semiconductor 093502 V. 1.0 EZ-Color™ Device Family, S4AD-5, Fab5 Device: CY8CLED02 Page 3 of 10 August 2009 PRODUCT DESCRIPTION (for qualification) Qualification Purpose: CY8CLED02 Device Qualification on S4AD-5 Technology, Fab5 Marketing Part #: CY8CLED02 Device Description: EZ-Color Controller Cypress Division: Cypress Semiconductor - Consumer and Computation Division TECHNOLOGY/FAB PROCESS DESCRIPTION S4AD-5 Passivation Type and Materials: Metal 1: 250A TiN/5,800A Al/700A TiN Metal 2: 500A TiN/8,000A Al/250A TiN 7,000A TeOs /6,000A Si3N4 Generic Process Technology/Design Rule (µ-drawn): Single Poly, Double Metal, 0.35 µm Gate Oxide Material/Thickness (MOS): SiO2 / 110A Name/Location of Die Fab (prime) Facility: GSMC/China Die Fab Line ID/Wafer Process ID: S4AD-5 GSMC SONOS Number of Metal Layers: 2 Metal Composition: PACKAGE AVAILABILITY PACKAGE ASSEMBLY SITE FACILITY 8/16- Lead SOIC CML-RA, PHIL-M, TAIWAN-T 24-Lead MLF AMKOR-L (KOREA) Note: Package Qualification details upon request. Cypress Semiconductor 093502 V. 1.0 EZ-Color™ Device Family, S4AD-5, Fab5 Device: CY8CLED02 Page 4 of 10 August 2009 MAJOR PACKAGE INFORMATION FOR THIS QUALIFICATION Package Designation: SZ16 Package Outline, Type, or Name: 16-Lead Small Outline Integrated Circuit (SOIC) Mold Compound Name/Manufacturer: EME 6600H/Sumitomo Mold Compound Flammability Rating: V-0 PER UL-94 Oxygen Rating Index: None Lead Frame Material: Copper Lead Finish, Composition / Thickness: Pure Sn Die Backside Preparation Method/Metallization: Backgrind Die Separation Method: 100% Saw Die Attach Supplier: Ablestik Die Attach Material: 8290 Die Attach Method: Epoxy Bond Diagram Designation: 001-11906 Wire Bond Method: Thermosonic Wire Material/Size: Au. 1.0mil Thermal Resistance Theta JA °C/W: 125C Package Cross Section Yes/No: N/A Assembly Process Flow: 49-24026 Name/Location of Assembly (prime) facility: Amkor-Phil MSL Level 1 Reflow Profile 260C ELECTRICAL TEST / FINISH DESCRIPTION Test Location: CML-R Note: Please contact a Cypress Representative for other packages availability. Cypress Semiconductor 093502 V. 1.0 EZ-Color™ Device Family, S4AD-5, Fab5 Device: CY8CLED02 Page 5 of 10 August 2009 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENT Stress/Test Test Condition (Temp/Bias) Result P/F High Temperature Operating Life Early Failure Rate Dynamic Operating Condition, Vcc Max=5.5V, 125°C P High Temperature Operating Life Latent Failure Rate Dynamic Operating Condition, Vcc Max=5.5V, 125°C P High Temperature Steady State life 125°C, 5.5V, Vcc Max P Low Temperature Operating Life -30°C, 5.5V P High Accelerated Saturation Test (HAST) 130°C, 5.25V, 85%RH Precondition: JESD22 Moisture Sensitivity Level 1 P 168 Hrs, 85C/85%RH+3IR-Reflow, 260°C+0, -5°C Temperature Cycle MIL-STD-883C, Method 1010, Condition C, -65°C to 150°C Precondition: JESD22 Moisture Sensitivity Level 1 P 168 Hrs, 85C/85%RH+3IR-Reflow, 260°C+0, -5°C Pressure Cooker 121°C, 100%RH, 15 Psig Precondition: JESD22 Moisture Sensitivity Level 1 P 168 Hrs, 85C/85%RH+3IR-Reflow, 260°C+0, -5°C Acoustic Microscopy Spec. 25-00104 P Age Bond Strength 200C, 4hrs MIL-STD-883, Method 883-2011 P Data Retention 150°C ± 5°C No Bias P Dynamic Latch-up 125C, 8.5V P Electrostatic Discharge Human Body Model (ESD-HBM) 2,200V JESD22, Method A114-B P JESD22, Method A114-E Electrostatic Discharge Human Body Model (ESD-HBM) 2,200V MIL-STD-883, Method 3015.7 P Electrostatic Discharge Charge Device Model (ESD-CDM) 500V Cypress Spec. 25-00020 P Endurance Test MIL-STD-883, Method 883-1033 P Static Latch-up 125C, ± 200mA Cypress Spec. 01-00081 P Cypress Semiconductor 093502 V. 1.0 EZ-Color™ Device Family, S4AD-5, Fab5 Device: CY8CLED02 Page 6 of 10 August 2009 RELIABILITY FAILURE RATE SUMMARY Device Tested/ Device Hours # Fails Activation Energy Thermal3 A.F Failure Rate High Temperature Operating Life Early Failure Rate1 1,010 Devices 0 N/A N/A 0 PPM High Temperature Operating Life1, 2 Long Term Failure Rate 720,000DHRs 0 0 .7 55 23 FIT Stress/Test 1 Assuming an ambient temperature of 55°C and a junction temperature rise of 15°C. Chi-squared 60% estimations used to calculate the failure rate. 3 Thermal Acceleration Factor is calculated from the Arrhenius equation 2 ⎡E ⎡ 1 1 ⎤ ⎤ AF = exp ⎢ A ⎢ - ⎥ ⎥ ⎣ k ⎣ T 2 T1 ⎦ ⎦ Where: EA =The Activation Energy of the defect mechanism. k = Boltzmann's constant = 8.62x10-5 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. Cypress Semiconductor 093502 V. 1.0 EZ-Color™ Device Family, S4AD-5, Fab5 Device: CY8CLED02 Page 7 of 10 August 2009 Reliability Test Data QTP #: 060605 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej STRESS: ACOUSTIC, MSL1 CY8C24494 (8C24494A) 9621713 610632687 PHIL-M COMP 15 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M COMP 15 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M COMP 15 0 STRESS: AGE BOND STRENGTH CY8C24494 (8C24494A) 9621713 610632687 PHIL-M COMP 10 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M COMP 10 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M COMP 10 0 STRESS: DATA RETENTION, PLASTIC, 150C CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 336 256 0 CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 1000 256 0 CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 1500 256 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 336 256 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 1000 256 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M 336 256 0 9621713 610632687A PHIL-M COMP 47 0 STRESS: ENDURANCE CY8C24494 (8C24494A) STRESS: ESD-CHARGE DEVICE MODEL, (500V) CY8C24494 (8C24494A) 9621713 610632687 PHIL-M COMP 9 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M COMP 9 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M COMP 9 0 CY8C24494 (8C24494A) 9623715 610635880 PHIL-M COMP 9 0 CY8C24494 (8C24795A) 9623716 610639349 SEOL-L COMP 9 0 CY8C24494 (8C24995A) 9623716 610639350 SEOL-L COMP 9 0 STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, (2,200V) CY8C24494 (8C24494A) 9621713 610632687 PHIL-M COMP 9 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M COMP 9 0 CY8C24494 (8C24494A) 9623715 610635880 PHIL-M COMP 9 0 CY8C24494 (8C24995A) 9623716 610639350 SEOL-L COMP 9 0 Failure Mechanism Cypress Semiconductor 093502 V. 1.0 EZ-Color™ Device Family, S4AD-5, Fab5 Device: CY8CLED02 Page 8 of 10 August 2009 Reliability Test Data QTP #: 060605 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, (2,200V) CY8C24494 (8C24494A) 9621713 610632687 PHIL-M COMP 3 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M COMP 3 0 CY8C24494 (8C24494A) 9623715 610635880 PHIL-M COMP 3 0 CY8C24494 (8C24995A) 9623716 610639350 SEOL-L COMP 3 0 PHIL-M COMP 3 0 C-USA COMP 3 0 STRESS: STATIC LATCH-UP TESTING (125C, 8.5V, +/-200mA) CY8C24494 (8C24494A) 9623716 CY8C24494 (8C24994A) 9621713 CY8C24494 (8C24494A) 9623715 610638054 SEOL-L COMP 3 0 CY8C24494 (8C24995A) 9623716 610639350 SEOL-L COMP 3 0 PHIL-M COMP 2 0 610639767 STRESS: DYNAMIC LATCH-UP (125C, 8.5V) CY8C24494 (8C24494A) 9621713 610632687 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (125C, 5.5V, Vcc Max) CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 96 1005 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 96 1144 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M 96 908 1 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (125C, 5.5V, Vcc Max) CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 168 180 CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 1000 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 168 180 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 1000 180 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M 168 180 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M 1000 180 0 CY8C24494 (8C24494A) 9623716 610639767A PHIL-M 1000 180 0 180 0 0 STRESS: HIGH TEMP STEADY STATE LIFE TEST (125C, 5.5V) CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 168 80 0 CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 336 80 0 45 0 STRESS: LOW TEMPERATURE DYNAMIC OPERATING LIFE, -30C, 5.5V CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 500 CAPACITOR DEFECT Cypress Semiconductor 093502 V. 1.0 EZ-Color™ Device Family, S4AD-5, Fab5 Device: CY8CLED02 Page 9 of 10 August 2009 Reliability Test Data QTP #: 060605 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: HI-ACCEL SATURATION TEST (130C, 85%RH, 5.25V), PRE COND 168 HR 85C/85%RH (MSL1) CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 128 49 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 128 49 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M 128 49 0 STRESS: PRESSURE COOKER TEST (121C, 100%RH), 15 Psig, PRE COND 168 HR 85C/85%RH (MSL1) CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 168 50 0 CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 288 50 0 CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 500 47 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 168 50 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M 168 50 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M 288 50 0 STRESS: TC COND. C -65C TO 150C, PRE COND 168 HRS 85C/85%RH (MSL1) CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 300 50 0 CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 500 50 0 CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 1000 50 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 300 50 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 500 49 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 1000 49 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M 300 50 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M 500 49 0 Cypress Semiconductor 093502 V. 1.0 EZ-Color™ Device Family, S4AD-5, Fab5 Device: CY8CLED02 Page 10 of 10 August 2009 Reliability Test Data QTP #: 093502 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej STRESS: DATA RETENTION, PLASTIC, 150C CY8CLED02 5716010 610751198 PHIL-M 500 40 0 CY8CLED02 5716010 610751198 PHIL-M 1000 40 0 CY8CLED02 5716010 610751202 PHIL-M 500 40 0 CY8CLED02 5716010 610751202 PHIL-M 1000 40 0 CY8CLED02 5716010 610751198 PHIL-M COMP 39 0 CY8CLED02 5716010 610751202 PHIL-M COMP 39 0 TWN-T COMP 9 0 8 0 STRESS: ENDURANCE STRESS: ESD-CHARGE DEVICE MODEL, (500V) CY8CLED02 5716010 610747058 STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-E, (2,200V) CY8CLED02 5716010 610747058 TWN-T COMP STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (125C, 5.5V, Vcc Max) CY8CLED02 5716010 610751198 PHIL-M 96 505 0 CY8CLED02 5716010 610751202 PHIL-M 96 505 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (125C, 5.5V, Vcc Max) CY8CLED02 5716010 610751198 PHIL-M 168 90 0 CY8CLED02 5716010 610751202 PHIL-M 168 90 0 TWN-T COMP 6 0 STRESS: STATIC LATCH-UP TESTING (125C, +/-200mA) CY8CLED02 5716010 610747058 Failure Mechanism