Cypress Semiconductor Product Qualification Report QTP# 98202 VERSION 1.0 November 2005 3.3V SDRAM Buffer – Fab 2 – L28 Technology CY2310ANZ 3.3V SDRAM Buffer for Mobile PCs with 4 SO-DIMMs CY2313ANZ 13 Output, 3.3V SDRAM Buffer for Desktop PCs with 3 DIMMs CY2314ANZ 14 Output, 3.3V SDRAM Buffer for Desktop PCs with 3 DIMMs CY2318ANZ 18 Output, 3.3V SDRAM Buffer for Desktop PCs with 4 DIMMs CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Sabbas Daniel Quality Reliability Director (408) 943-2685 Fredrick Whitwer Principal Reliability Engineer (408) 943-2722 Cypress Semiconductor 3.3V SDRAM Buffer, Fab 2, L28 Technology Device: CY2310A*/CY2313A*/CY2314A*/CY2318A* QTP# 98202, V. 1.0 Page 2 of 9 November 2005 QUALIFICATION HISTORY Qual Report Description of Qualification Purpose Date Comp 97403 Qualify Fab2 to fabricate CY227x Device Family, Commercial Products in L28 Technology Mar 98 98202 Transfer 7C83720A Device Family to Fab2, L28 Technology Aug 98 Cypress Semiconductor 3.3V SDRAM Buffer, Fab 2, L28 Technology Device: CY2310A*/CY2313A*/CY2314A*/CY2318A* QTP# 98202, V. 1.0 Page 3 of 9 November 2005 PRODUCT DESCRIPTION (for qualification) Qualification Purpose: Transfer 7C83720A Device Family to Fab2, L28 Technology Marketing Part #: CY2310ANZ, CY2313ANZ, CY2314ANZ, CY2318ANZ Device Description: 3.3V SDRAM Buffer for Desktop PCs with 4 DIMMs Cypress Division: Consumer & Computation Division Overall Die (or Mask) REV Level (pre-requisite for qualification): What ID markings on Die: Rev. A 7C83720A TECHNOLOGY/FAB PROCESS DESCRIPTION - L28 Number of Metal Layers: 2 Metal Composition: Metal 1: 500A Ti/1,200A TiW/6,000A Al/1,200A TiW Metal 2: 1,500A TiW//10,000A Al/150A Ti Passivation Type and Materials: 3,000A TEOS + 15,000A Si2N4 Free Phosphorus contents in top glass layer (%): Die Coating(s), if used: N/A Generic Process Technology/Design Rule (µ-drawn): Gate Oxide Material/Thickness (MOS): Name/Location of Die Fab (prime) Facility: Die Fab Line ID/Wafer Process ID: N/A CMOS, Single Poly, Double Metal /0.65 µm SiO2 / 145 A Cypress Semiconductor – Round Rock, TX Fab2/L28 Cypress Semiconductor 3.3V SDRAM Buffer, Fab 2, L28 Technology Device: CY2310A*/CY2313A*/CY2314A*/CY2318A* QTP# 98202, V. 1.0 Page 4 of 9 November 2005 MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION Package Outline, Type, or Name: 48 Pins SSOP Mold Compound Name/Manufacturer: Hitachi CEL-9200 (SSOP) Lead Frame material: Copper Lead Finish, composition: Solder Plated, 85%Sn, 15%Pb Die Attach Area Plating: Solder Plate Die Attach Method: Epoxy Die Attach Material: Ablestik 8361H Wire Bond Method: Thermosonic Wire Material/Size: 1.0 mil JESD22-A112 Moisture Sensitivity Level Level 1 Assembly Line ID and Process ID: Cypress Philippines (CSPI) Note: Please contact a Cypress Representative for other packages availability. Cypress Semiconductor 3.3V SDRAM Buffer, Fab 2, L28 Technology Device: CY2310A*/CY2313A*/CY2314A*/CY2318A* QTP# 98202, V. 1.0 Page 5 of 9 November 2005 RELIABILITY TESTS PERFORMED Stress/Test Test Condition (Temp/Bias) Result P/F Dynamic Operating Condition, Vcc Max = 3.65V, 150°C P Dynamic Operating Condition, Vcc Max = 3.65V, 150°C P Cold Life Test Dynamic Operating Condition, Vcc Max = 6.5V, -30°C P Temperature Cycle MIL-STD-883C, Method 1010, Condition C, -65°C to 150°C Precondition: JESD22 Moisture Sensitivity MSL 1 P High Temperature Operating Life Early Failure Rate High Temperature Operating Life Latent Failure Rate High Accelerated Saturation Test (HAST) 168 Hrs, 85C/85%RH+3IR-Reflow, 220°C+0, -5°C 140°C, 3.63V, 85%RH Precondition: JESD22 Moisture Sensitivity MSL 1 P 168 Hrs, 85°C/85%RH+3IR-Reflow, 220°C+0, -5°C Data Retention (Plastic) 165°C, no bias P High Temp Storage 165°C, no bias P Electrostatic Discharge Human Body Model (ESD-HBM) 2,000V/4,000V MIL-STD-883, Method 3015.7 P Electrostatic Discharge Charge Device Model (ESD-CDM) 1,000V Cypress Spec. 25-00020 P Static Latch-up 125C, 10V, ± 200mA In accordance with JEDEC 17. Cypress Spec. 01-00081 P Cypress Semiconductor 3.3V SDRAM Buffer, Fab 2, L28 Technology Device: CY2310A*/CY2313A*/CY2314A*/CY2318A* QTP# 98202, V. 1.0 Page 6 of 9 November 2005 RELIABILITY FAILURE RATE SUMMARY Stress/Test High Temperature Operating Life Early Failure Rate High Temperature Operating Life1,2 Long Term Failure Rate 1 2 3 Device Tested/ Device Hours # Fails Activation Energy Thermal3 A.F Failure Rate 850 Devices 0 N/A N/a 0 PPM 173,900 DHRs 0 0.7 170 31 FITs Assuming an ambient temperature of 55°C and a junction temperature rise of 15°C. Chi-squared 60% estimations used to calculate the failure rate. Thermal Acceleration Factor is calculated from the Arrhenius equation E 1 1 AF = exp A - k T 2 T1 where: EA =The Activation Energy of the defect mechanism. k = Boltzmann's constant = 8.62x10-5 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. Cypress Semiconductor 3.3V SDRAM Buffer, Fab 2, L28 Technology Device: CY2310A*/CY2313A*/CY2314A*/CY2318A* QTP# 98202, V. 1.0 Page 7 of 9 November 2005 Reliability Test Data QTP #: 97403 Device Assy Loc. Fab Lot# Assy Lot# Duration S/S Rej STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (150C, 3.65V) CY2273APVC CSPI-R 2732995 619708289/319 48 180 0 CY2273APVC CSPI-R 2735423 619709731 48 340 0 CY2273APVC CSPI-R 2734307 619709732 48 330 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (150C, 3.65V) CY2273APVC CSPI-R 2732995 619708289/319 80 116 0 CY2273APVC CSPI-R 2732995 619708289/319 500 116 0 CY2273APVC CSPI-R 2735423 619709731 80 120 0 CY2273APVC CSPI-R 2735423 619709731 500 116 0 CY2273APVC CSPI-R 2734307 619709732 80 116 0 CY2273APVC CSPI-R 2734307 619709732 500 115 0 STRESS: READ & RECORD LIFE TEST (150C, 3.65V) CY2273APVC CSPI-R 2734307 619709732 48 10 0 CY2273APVC CSPI-R 2734307 619709732 80 10 0 CY2273APVC CSPI-R 2734307 619709732 500 10 0 STRESS: COLD LIFE TEST (-30C, 6.5V) CY2273APVC CSPI-R 2732995 619708289/319 500 45 0 CY2273APVC CSPI-R 2732995 619708289/319 1000 44 0 619708289/319 COMP 3 0 3 0 STRESS: ESD-CHARGE DEVICE MODEL, 1,000V CY2273APVC CSPI-R 2732995 STRESS: ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, 4,000V CY2273APVC CSPI-R 2732995 619708289/319 COMP STRESS: DATA BAKE-PLASTIC (165C, NO BIAS) CY2273APVC CSPI-R 2732995 619708289/319 168 78 0 CY2273APVC CSPI-R 2732995 619708289/319 552 78 0 CY2273APVC CSPI-R 2735423 619709731 168 78 0 CY2273APVC CSPI-R 2735423 619709731 552 78 0 CY2273APVC CSPI-R 2734307 619709732 168 78 0 CY2273APVC CSPI-R 2734307 619709732 552 78 0 Failure Mechanism Cypress Semiconductor 3.3V SDRAM Buffer, Fab 2, L28 Technology Device: CY2310A*/CY2313A*/CY2314A*/CY2318A* QTP# 98202, V. 1.0 Page 8 of 9 November 2005 Reliability Test Data QTP #: 97403 Device Assy Loc. Fab Lot# Assy Lot# Duration S/S Rej STRESS: HIGH TEMPERATURE STORAGE (165C, NO BIAS) CY2273APVC CSPI-R 2732995 619708289/319 336 45 0 CY2273APVC CSPI-R 2732995 619708289/319 500 45 0 CY2273APVC CSPI-R 2732995 619708289/319 1000 45 0 STRESS: HI-ACCEL SATURATION TEST (140C, 3.63V), PRE COND, 168 HRS 85C/85%RH, MSL1 CY2273APVC CSPI-R 2732995 619708289/319 128 44 0 CY2273APVC CSPI-R 2732995 619708289/319 256 44 0 CY2273APVC CSPI-R 2734307 619709732 128 45 0 STRESS: TC COND. C, -65 TO 150C, PRE COND, 168 HRS 85C/85%RH, MSL1 CY2273APVC CSPI-R 2732995 619708289/319 300 45 0 CY2273APVC CSPI-R 2732995 619708289/319 1000 45 0 CY2273APVC CSPI-R 2735423 619709731 300 48 0 CY2273APVC CSPI-R 2735423 619709731 1000 48 0 CY2273APVC CSPI-R 2734307 619709732 300 47 0 CY2273APVC CSPI-R 2734307 619709732 1000 47 0 Failure Mechanism Cypress Semiconductor 3.3V SDRAM Buffer, Fab 2, L28 Technology Device: CY2310A*/CY2313A*/CY2314A*/CY2318A* QTP# 98202, V. 1.0 Page 9 of 9 November 2005 Reliability Test Data QTP #: 98202 Device Assy Loc. Fab Lot# Assy Lot# Duration S/S Rej COMP 3 0 COMP 3 0 COMP 3 0 STRESS: ESD-CHARGE DEVICE MODEL (1,000V) CY22138ANZ CSPI-R 2813152 619806440 STRESS: ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015 (2,000V) CY22138ANZ CSPI-R 2813152 619806440 STRESS: STATIC LATCH-UP TESTING (125C, 10V, +/-200mA) CY22138ANZ CSPI-R 2813152 619806440 Failure Mechanism