Cypress Semiconductor Technology Qualification Report QTP# 060401 VERSION 1.1 June 2008 PSoC Mixed Signal Array Proton Product Family S4AD-5 Technology, Fab4 CY8C21123 CY8C21223 CY8C21323 PSoCTM Mixed Signal Array with OnChip Controller CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Fredrick Whitwer Principal Reliability Engineer (408) 943-2722 Mira Ben-Tzur Quality Engineering Director (408) 943-2675 Cypress Semiconductor PSoC Mixed Signal Array Proton Product Family, S4AD-5, Fab 4 Device: CY8C21x23 060401 V.1.1 Page 2 of 10 June 2008 PRODUCT QUALIFICATION HISTORY Qual Report Description of Qualification Purpose Date Comp 052004 PSoC 8C21001A Neutron Product Family on SONOS S4AD-5 Technology, Fab4 Aug 05 060401 PSoC 8C21000A Proton Product Family on SONOS S4AD-5 Technology transfer to Fab4 Mar 06 Cypress Semiconductor PSoC Mixed Signal Array Proton Product Family, S4AD-5, Fab 4 Device: CY8C21x23 060401 V.1.1 Page 3 of 10 June 2008 PRODUCT DESCRIPTION (for qualification) Qualification Purpose: Transfer PSoC 8C21000AC Proton Product Family on S4AD-5 Technology to Fab4 Marketing Part #: CY8C21123, CY8C21223, CY8C21323 Device Description: 3.3V and 5V Industrial 24MHz Programmable System on Chip available in 8/16-Lead SOIC, 20-Lead SSOP and 24 MLF packages Cypress Division: Cypress Semiconductor Corporation – Consumer and Computation Division Overall Die (or Mask) REV Level (pre-requisite for qualification): What ID markings on Die: Rev. A 8C21000A TECHNOLOGY/FAB PROCESS DESCRIPTION S4AD-5 Number of Metal Layers: 2 Metal Composition: Metal 1: 500A Ti/6,000A Al/300A TiW Metal 2: 500A Ti/8,000A Al /300A TiW Passivation Type and Materials: 7,000A TEOS / 6,000A Si3N4 Free Phosphorus contents in top glass layer (%): 0% Number of Transistors in Device: 90,000 Number of Gates in Device 9,000 Generic Process Technology/Design Rule (µ-drawn): Single Poly, Double Metal, 0.35 µm Gate Oxide Material/Thickness (MOS): SiO2 / 110A Name/Location of Die Fab (prime) Facility: Cypress Semiconductor - Minnesota Die Fab Line ID/Wafer Process ID: Fab 4, S4AD-5, SONOS PACKAGE AVAILABILITY PACKAGE ASSEMBLY SITE FACILITY TEST SITE FACILITY 8-Lead SOIC PHIL-M, CML-RA CML-R 16-Lead SOIC PHIL-M, CML-RA CML-R 20-Lead SSOP PHIL-M, CML-RA CML-R 24-Lead MLF SEOUL-L CML-R Note: Package Qualification details upon request. Cypress Semiconductor PSoC Mixed Signal Array Proton Product Family, S4AD-5, Fab 4 Device: CY8C21x23 MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION Package Designation: Package Outline, Type, or Name: Mold Compound Name/Manufacturer: Mold Compound Flammability Rating: SP20 20-Lead Shrunk Small Outline Package (SSOP) Sumitomo G600 V-O per UL94 Oxygen Rating Index: N/A Lead Frame Material: Copper Lead Finish, Composition / Thickness: 100% Pure Sn Die Backside Preparation Method/Metallization: Backgrind Die Separation Method: 100% Saw Die Attach Supplier: Ablestik Die Attach Material: 8290 Die Attach Method: Epoxy Bond Diagram Designation: 10-05882 Wire Bond Method: Thermosonic Wire Material/Size: Au, 1.0mil Thermal Resistance Theta JA °C/W: 118.55°C/W Package Cross Section Yes/No: No Assembly Process Flow: 001-00365 Name/Location of Assembly (prime) facility: PHIL-M ELECTRICAL TEST / FINISH DESCRIPTION Test Location: CML-R Fault Coverage: 100% Note: Please contact a Cypress Representative for other packages availability. 060401 V.1.1 Page 4 of 10 June 2008 Cypress Semiconductor PSoC Mixed Signal Array Proton Product Family, S4AD-5, Fab 4 Device: CY8C21x23 060401 V.1.1 Page 5 of 10 June 2008 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENT Stress/Test Test Condition (Temp/Bias) Result P/F High Temperature Operating Life Early Failure Rate Dynamic Operating Condition, Vcc Max=5.5V, 125°C P High Temperature Operating Life Latent Failure Rate Dynamic Operating Condition, Vcc Max=5.5V, 125°C P High Accelerated Saturation Test (HAST) 130°C, 5.25V, 85%RH Precondition: JESD22 Moisture Sensitivity Level 1 P 168 Hrs, 85C/85%RH+3IR-Reflow, 260°C+0, -5°C Temperature Cycle MIL-STD-883C, Method 1010, Condition C, -65°C to 150°C Precondition: JESD22 Moisture Sensitivity Level 1 Pressure Cooker 121°C, 100%RH Precondition: JESD22 Moisture Sensitivity Level 1 P 168 Hrs, 85C/85%RH+3IR-Reflow, 260°C+0, -5°C P 168 Hrs, 85C/85%RH+3IR-Reflow, 260°C+0, -5°C Data Retention 150°C ± 5°C No Bias P High Temperature Steady State life 125°C, 5.5V, Vcc Max P Electrostatic Discharge Human Body Model (ESD-HBM) 2,200V JESD22, Method A114-B P Electrostatic Discharge Human Body Model (ESD-HBM) 2,200V MIL-STD-883, Method 3015.7 P Electrostatic Discharge Charge Device Model (ESD-CDM) 500V Cypress Spec. 25-00020 P Endurance Test MIL-STD-883, Method 883-1033 P Age Bond Strength 200C, 4hrs MIL-STD-883, Method 883-2011 P Low Temperature Operating Life -30C, 5.5V, 8MHZ P SEM Analysis MIL-STD-883, Method 883-2018-2 P Acoustic Microscopy Cypress Spec. 25-00104 P Alpha Particle Sensitivity Cypress Spec 25-00055 P Dynamic Latch up 125C, 8.3V P Latch up Sensitivity 125C, ± 200mA, ± 300mA P In accordance with JEDEC 17. Cypress Spec. 01-00081 Cypress Semiconductor PSoC Mixed Signal Array Proton Product Family, S4AD-5, Fab 4 Device: CY8C21x23 060401 V.1.1 Page 6 of 10 June 2008 RELIABILITY FAILURE RATE SUMMARY Device Tested/ Device Hours # Fails Activation Energy Thermal3 A.F Failure Rate High Temperature Operating Life Early Failure Rate1 3,006 Devices 0 N/A N/A 0 PPM High Temperature Operating Life1, 2 Long Term Failure Rate 528,750 DHRs 0 0 .7 55 31 FIT Stress/Test 1 Assuming an ambient temperature of 55°C and a junction temperature rise of 15°C. Chi-squared 60% estimations used to calculate the failure rate. 3 Thermal Acceleration Factor is calculated from the Arrhenius equation 2 ⎡E ⎡ 1 1 ⎤ ⎤ AF = exp ⎢ A ⎢ - ⎥ ⎥ ⎣ k ⎣ T 2 T1 ⎦ ⎦ Where: EA =The Activation Energy of the defect mechanism. k = Boltzmann's constant = 8.62x10-5 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. Cypress Semiconductor PSoC Mixed Signal Array Proton Product Family, S4AD-5, Fab 4 Device: CY8C21x23 060401 V.1.1 Page 7 of 10 June 2008 Reliability Test Data QTP #: Device Fab Lot # 052004 Assy Lot # Assy Loc Duration Samp Rej STRESS: ACOUSTIC, MSL1 CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T COMP 15 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M COMP 15 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M COMP 15 0 STRESS: AGE BOND STRENGTH CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T COMP 10 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M COMP 10 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M COMP 10 0 STRESS: DATA RETENTION, PLASTIC, 150C CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T 500 256 0 CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T 1000 256 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M 500 256 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M 1000 254 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M 500 252 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M 1000 252 0 4516647 610521157 TAIWN-T COMP 45 0 STRESS: ENDURANCE CY8C21534 (8C21534A) STRESS: ESD-CHARGE DEVICE MODEL, (500V) CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T COMP 9 0 CY8C21534 (8C21534A) 4516674 610522255 TAIWN-T COMP 9 0 CY8C21534 (8C21534A) 4517851 610522404 TAIWN-T COMP 9 0 STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, (2,200V) CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T COMP 9 0 CY8C21534 (8C21534A) 4516674 610522255 TAIWN-T COMP 9 0 CY8C21534 (8C21534A) 4517851 610522404 TAIWN-T COMP 9 0 STRESS: ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, (2,200V) CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T COMP 3 0 CY8C21534 (8C21534A) 4516674 610522255 TAIWN-T COMP 3 0 CY8C21534 (8C21534A) 4517851 610522404 TAIWN-T COMP 3 0 Failure Mechanism Cypress Semiconductor PSoC Mixed Signal Array Proton Product Family, S4AD-5, Fab 4 Device: CY8C21x23 060401 V.1.1 Page 8 of 10 June 2008 Reliability Test Data QTP #: Device Fab Lot # Assy Lot # 052004 Assy Loc Duration Samp Rej Failure Mechanism STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (125C, 5.5V, Vcc Max) CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T 120 1002 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M 120 1002 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M 120 1002 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (125C, 5.5V, Vcc Max) CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T 750 235 0 CY8C21534 (8C21534A) 4517851 610522404 TAIWN-T 750 235 0 CY8C21534 (8C21534A) 4516674 610522255 TAIWN-T 750 235 0 STRESS: HIGH TEMP STEADY STATE LIFE TEST (125C, 5.5V) CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T 168 76 0 CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T 336 76 0 STRESS: HI-ACCEL SATURATION TEST (130C, 85%RH, 5.25V), PRE CONDITION 168 HR 85C/85%RH (MSL1) CY8C21234 (8C21234A) 4516647 610527569 PHIL-M 128 49 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M 128 44 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M 128 44 0 500 45 0 STRESS: LOW TEMPERATURE OPERATING LIFE (-30C, 5.5V) CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T STRESS: PRESSURE COOKER TEST (121C, 100%RH), PRE CONDITION 168 HR 85C/85%RH (MSL1) CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T 168 45 0 CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T 336 45 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M 168 45 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M 336 45 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M 168 45 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M 336 45 0 STRESS: STATIC LATCH-UP TESTING (125C, 11V, ±300mA) CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T COMP 3 0 CY8C21534 (8C21534A) 4516674 610522255 TAIWN-T COMP 3 0 CY8C21534 (8C21534A) 4517851 610522404 TAIWN-T COMP 3 0 610521157 TAIWN-T COMP 3 0 STRESS: DYNAMIC LATCH-UP (8.3V) CY8C21534 (8C21534A) 4516647 Cypress Semiconductor PSoC Mixed Signal Array Proton Product Family, S4AD-5, Fab 4 Device: CY8C21x23 060401 V.1.1 Page 9 of 10 June 2008 Reliability Test Data QTP #: Device Fab Lot # Assy Lot # 052004 Assy Loc Duration Samp Rej STRESS: TC COND. C -65C TO 150C, PRECONDITION 168 HRS 85C/85%RH (MSL1) CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T 300 50 0 CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T 500 50 0 CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T 1000 50 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M 300 45 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M 1000 45 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M 300 45 0 Failure Mechanism Cypress Semiconductor PSoC Mixed Signal Array Proton Product Family, S4AD-5, Fab 4 Device: CY8C21x23 060401 V.1.1 Page 10 of 10 June 2008 Reliability Test Data QTP #: Device Fab Lot # Assy Lot # 060401 Assy Loc Duration Samp Rej STRESS: ESD-CHARGE DEVICE MODEL, (500V) CY8C21323 (8C21323A) 4546053 610608317 PHIL-M COMP 9 0 9 0 COMP 3 0 COMP 3 0 STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, (2,200V) CY8C21323 (8C21323A) 4546053 610608317 PHIL-M COMP STRESS: ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, (2,200V) CY8C21323 (8C21323A) 4546053 610608317 PHIL-M STRESS: STATIC LATCH-UP TESTING (125C, 8.5V, ±200mA) CY8C21323 (8C21323A) 4546053 610608317 PHIL-M Failure Mechanism