ANPEC APM4350KPC-TR

APM4350KP
N-Channel Enhancement Mode MOSFET
Pin Description
Features
•
D
30V/60A,
D
D
RDS(ON) =7.5mΩ (typ.) @ VGS = 10V
D
S
RDS(ON) =11.5mΩ (typ.) @ VGS = 4.5V
•
•
•
•
S
S
Super High Dense Cell Design
G
Avalanche Rated
Reliable and Rugged
Lead Free Available (RoHS Compliant)
DD D D
Applications
•
G
Power Management in Notebook Computer, or
Decktop Computer.
S S S
N-Channel MOSFET
Ordering and Marking Information
Package Code
KP : KPAK
Operating Junction Temp. Range
C : -55 to 150 °C
Handling Code
TU : Tube
TR : Tape & Reel
Lead Free Code
L : Lead Free Device Blank : Original Device
APM4350
Lead Free Code
Handling Code
Temp. Range
Package Code
APM4350 KP :
XXXXX - Date Code
APM4350
XXXXX
Note: ANPEC lead-free products contain molding compounds 100% matte in plate termination finish; which
are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC
lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jun., 2006
1
www.anpec.com.tw
APM4350KP
Absolute Maximum Ratings
Symbol
(TA = 25°C unless otherwise noted)
Parameter
Rating
Unit
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
30
VGSS
Gate-Source Voltage
±20
Maximum Junction Temperature
150
°C
-55 to 150
°C
TC=25°C
50
A
TC=25°C
140
TC=100°C
80
TC=25°C
60
TC=100°C
35
TC=25°C
50
TC=100°C
20
TJ
TSTG
Storage Temperature Range
IS
Diode Continuous Forward Current
IDP
300µs Pulse Drain Current Tested
V
A
Mounted on Large Heat Sink
ID
PD
RθJC
Continuous Drain Current
Maximum Power Dissipation
2.5
Thermal Resistance-Junction to Case
A
W
°C/W
2
Mounted on PCB of 1in pad area
ID
PD
RθJA
Continuous Drain Current
Maximum Power Dissipation
TA=25°C
13.5
TA=100°C
8.5
TA=25°C
2.5
TA=100°C
1
Thermal Resistance-Junction to Ambient
50
A
W
°C/W
Mounted on PCB of Minimum Footprint
ID
PD
RθJA
Continuous Drain Current
Maximum Power Dissipation
Thermal Resistance-Junction to Ambient
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jun., 2006
2
TA=25°C
10
TA=100°°C
6
TA=25°C
1.5
TA=100°C
0.5
75
A
W
°C/W
www.anpec.com.tw
APM4350KP
Electrical Characteristics
Symbol
Parameter
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Test Condition
VGS=0V, IDS=250µA
APM4350KP
Min.
Typ.
IGSS
a
1
VDS=VGS, IDS=250µA
30
Gate Leakage Current
VGS=±20V, VDS=0V
1.3
Unit
V
VDS=24V, VGS=0V
Gate Threshold Voltage
Drain-Source On-state Resistance
Max.
30
Tj=85°C
VGS(th)
RDS(ON)
(TA = 25°C Unless Otherwise Noted)
1.8
µA
2.5
V
±100
nA
VGS=10V, IDS=30A
7.5
9
VGS=4.5V, IDS=15A
11.5
14.5
ISD=15A, VGS=0V
0.75
1.1
mΩ
Diode Characteristics
a
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Gate Charge Characteristics
Qg
Total Gate Charge
IDS=15A, dlSD/dt=100A/µs
V
11
ns
3
nC
b
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
28
VDS=15V, VGS=10V,
IDS=30A
39
nC
4
9
b
Dynamic Characteristics
RG
Gate Resistance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(ON)
Turn-on Delay Time
tr
Turn-on Rise Time
td(OFF)
Turn-off Delay Time
tf
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS=15V,
Frequency=1.0MHz
VDD=15V, RL=15Ω,
IDS=1A, VGEN=10V,
RG=6Ω
Turn-off Fall Time
Ω
1.6
1660
pF
260
170
18
33
15
28
47
86
22
41
ns
Note:
a : Pulse test ; pulse width≤300µs, duty cycle≤2%.
b : Guaranteed by design, not subject to production testing.
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jun., 2006
3
www.anpec.com.tw
APM4350KP
Typical Characteristics
Drain Current
Power Dissipation
70
60
60
ID - Drain Current (A)
Ptot - Power (W)
50
40
30
20
10
50
40
30
20
10
o
o
0
TC=25 C
0
20
40
60
0
80 100 120 140 160
40
60
80 100 120 140 160
Safe Operation Area
Thermal Transient Impedance
Normalized Transient Thermal Resistance
ID - Drain Current (A)
20
Tj - Junction Temperature (°C)
it
im
)L
n
o
s(
Rd
1ms
10ms
10
100ms
1s
DC
1
o
TC=25 C
0.1
0.1
0
Tj - Junction Temperature (°C)
400
100
TC=25 C,VG=10V
1
10
1
Duty = 0.5
0.2
0.1
0.05
0.1
0.02
0.01
2
Single Pulse
0.01
1E-4
80
VDS - Drain - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jun., 2006
2
1E-3
0.01
Mounted on 1in pad
o
RθJA :50 C/W
0.1
1
10
100
Square Wave Pulse Duration (sec)
4
www.anpec.com.tw
APM4350KP
Typical Characteristics (Cont.)
Output Characteristics
Drain-Source On Resistance
120
20
VGS= 6,7,8,9,10V
5V
5.5V
18
RDS(ON) - On - Resistance (mΩ)
ID - Drain Current (A)
100
4.5V
80
60
4V
40
3.5V
20
0.5
1.0
1.5
2.0
2.5
12
10
VGS=10V
8
6
0
20
40
60
80
100
VDS - Drain-Source Voltage (V)
ID - Drain Current (A)
Gate-Source On Resistance
Gate Threshold Voltage
1.8
ID=30A
120
IDS =250µA
1.6
Normalized Threshold Voltage
16
RDS(ON) - On - Resistance (mΩ)
14
2
3.0
18
14
12
10
8
6
4
VGS=4.5V
4
3V
0
0.0
16
1.4
1.2
1.0
0.8
0.6
0.4
0.2
1
2
3
4
5
6
7
8
9
0.0
-50 -25
10
VGS - Gate - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jun., 2006
0
25
50
75 100 125 150
Tj - Junction Temperature (°C)
5
www.anpec.com.tw
APM4350KP
Typical Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
1.8
1.6
1.4
IS - Source Current (A)
Normalized On Resistance
100
VGS = 10V
IDS = 30A
1.2
1.0
0.8
0.6
0.4
0.2
o
10
Tj=150 C
o
Tj=25 C
1
o
[email protected]=25 C: 7.5mΩ
0.0
-50 -25
0
25
50
0.2
0.0
75 100 125 150
0.3
0.6
0.9
1.2
1.5
Tj - Junction Temperature (°C)
VSD - Source - Drain Voltage (V)
Capacitance
Gate Charge
2500
1.8
10
Frequency=1MHz
VDS= 15V
VGS - Gate - source Voltage (V)
IDS= 30A
C - Capacitance (pF)
2000
Ciss
1500
1000
500
Coss
8
6
4
2
Crss
0
0
5
10
15
20
25
0
0
30
10
15
20
25
30
QG - Gate Charge (nC)
VDS - Drain - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jun., 2006
5
6
www.anpec.com.tw
APM4350KP
Avalanche Test Circuit and Waveforms
VDS
L
DUT
RG
VDD
IL
tp
0.01Ω
Switching Time Test Circuit and Waveforms
VDS
RD
VDS
DUT
90%
VGS
RG
VDD
10%
VGS
tp
td(on) tr
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jun., 2006
7
td(off) tf
www.anpec.com.tw
APM4350KP
Packaging Information
KPAP (Reference JEDEC Registration MS-012)
7
6
5
1
2
3
4
8
7
6
5
1
2
3
4
G1
G
K
E
E1
H
F1
F
8
D
e
Dim
A
B
C
D
E
E1
e
F
F1
G
G1
H
K
a
B
C
A
a
Millimeters
Min.
Max.
1.00
1.20
0.38
0.51
0.19
0.25
4.80
5.00
5.90
6.10
5.696
5.796
1.27 BSC
0.052
0.152
0.352
0.452
0.052
0.152
0.352
0.452
3.491
3.691
1.60
0°
12°
Inches
Min.
Max.
0.039
0.047
0.015
0.020
0.007
0.010
0.189
0.197
0.232
0.240
0.224
0.228
0.050 BSC
0.002
0.006
0.014
0.018
0.002
0.006
0.014
0.018
0.137
0.145
0.063
0°
12°
Physical Specifications
Terminal Material
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb,100%Sn).
Lead Solderability
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jun., 2006
8
www.anpec.com.tw
APM4350KP
Reflow Condition
(IR/Convection or VPR Reflow)
tp
TP
Critical Zone
TL to TP
Temperature
Ramp-up
TL
tL
Tsmax
Tsmin
Ramp-down
ts
Preheat
25
t 25°
C to Peak
Time
Classification Reflow Profiles
Profile Feature
Average ramp-up rate
(TL to TP)
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
Tsmax to TL
- Ramp-up Rate
Time maintained above:
- Temperature (TL)
- Time (tL)
Peak Temperature (Tp)
Time within 5°C of actual
Peak Temperature (tp)
Ramp-down Rate
Sn-Pb Eutectic Assembly
Large Body
Small Body
Pb-Free Assembly
Large Body
Small Body
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
3°C/second max
183°C
60-150 seconds
217°C
60-150 seconds
225 +0/-5°C
240 +0/-5°C
245 +0/-5°C
250 +0/-5°C
10-30 seconds
10-30 seconds
10-30 seconds
20-40 seconds
Time 25°C to Peak Temperature
6°C/second max.
6°C/second max.
6 minutes max.
8 minutes max.
Notes: All temperatures refer to topside of the package .Measured on the body surface.
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jun., 2006
9
www.anpec.com.tw
APM4350KP
Package Refolw Conditions
pkg. thickness ≥ 2.5mm
and all bags
Convection 220 +5/-0°
C
pkg. thickness < 2.5mm and
3
pkg. volume ≥ 350mm
pkg. thickness < 2.5mm and pkg.
3
volume < 350mm
Convection 235 +5/-0°
C
VPR 215-219°
C
VPR 235 +5/-0°
C
IR/Convection 220 +5/-0°
C
IR/Convection 220 +5/-0°
C
Reliability test program
Test Item
Method
Description
SOLDERABILITY
MIL-STD-883D-2003
245°C,5 SEC
HOLT
MIL-STD 883D-1005.7
1000 Hrs Bias @125°C
PCT
JESD-22-B, A102
168 Hrs, 100% RH, 121°C
TST
MIL-STD 883D-1011.9
-65°C ~ 150°C, 200 Cycles
Carrier Tape & Reel Dimensions
t
D
P
Po
E
P1
Bo
F
W
Ao
D1
Ko
T2
J
C
A
B
T1
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jun., 2006
10
www.anpec.com.tw
APM4350KP
Carrier Tape & Reel Dimensions(Cont.)
Application
A
B
C
J
T1
T2
W
P
E
330±1
62+1.5
2±0.5
12.4±0.2
2±0.2
12±0. 3
8±0.1
1.75±0.1
F
D
12.75+
0.15
D1
Po
P1
Ao
Bo
Ko
t
4.0±0.1
2.0±0.1
6.4±0.1
5.2±0. 1
SOP- 8
5.5±1
1.55+0.1 1.55+0.25
2.1±0.1 0.3±0.013
Cover Tape Dimensions
Application
Carrier Width
Cover Tape Width
Devices Per Reel
SOP-8
12
9.3
2500
Customer Service
Anpec Electronics Corp.
Head Office :
No.6, Dusing 1st Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jun., 2006
11
www.anpec.com.tw