ACE ACE632

ACE632
N&P Pair Enhancement Mode MOSFET
Description
The ACE632 is the N- and P-Channel enhancement mode power field effect transistors are produced
using high cell density, DMOS trench technology. This high density process is especially tailored to
minimize on-state resistance and provide superior switching performance. These devices are particularly
suited for low voltage applications such as notebook computer power management and other battery
powered circuits where high-side switching, low in-line power loss, and resistance to transients are
needed.
Features

N-Channel
20V/0.95A,RDS(ON)[email protected]=4.5V
20V/0.75A,RDS(ON)[email protected]=2.5V

20V/0.65A,RDS(ON)[email protected]=1.8V
P-Channel
-20V/1.0A,RDS(ON)= [email protected]=-4.5V
-20V/0.8A,RDS(ON)= [email protected]=-2.5V


-20V/0.7A,RDS(ON)= [email protected]=-1.8V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current capability
Application







Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
Absolute Maximum Ratings
(TA=25℃ Unless otherwise noted)
Typical
Parameter
Symbol
Drain-Source Voltage
VDS
20
-20
V
Gate-Source Voltage
VGS
±12
±12
V
1.2
-1.0
0.9
-0.7
Continuous Drain Current (TJ=150℃)
TA=25℃
TA=80℃
ID
N-Channel P-Channel
Pulsed Drain Current1)
IDM
4
-3
Continuous Source Current (Diode Conduction)
IS
0.6
-0.6
Power Dissipation
TA=25℃
TA=70℃
PD
0.3
0.19
Unit
A
A
W
VER 1.3
1
ACE632
N&P Pair Enhancement Mode MOSFET
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
TJ
TSTG
T≦10sec
Steady State
RθJA
-55 to 150
O
C
-55 to 150
O
C
360
360
400
400
O
C/W
Packaging Type
SC-70-6
6
1
5
2
4
SC-70-6 Description
3
N-Channel
1
Source 1
2
Gate 1
3
Drain 2
4
Source 2
5
Gate 2
6
Drain 1
P-Channel
Ordering information
ACE632 XX +
H
Halogen - free
Pb - free
HM : SC-70-6
VER 1.3
2
ACE632
N&P Pair Enhancement Mode MOSFET
Electrical Characteristics
Parameter
Symbol
Conditions
Min.
Typ. Max. Unit
Static
Drain-Source Breakdown
Voltage
Drain-Source On Resistance
V(BR)DSS
RDS(ON)
Gate Threshold Voltage
VGS(th)
Gate Leakage Current
IGSS
Zero Gate Voltage Drain
Current
IDSS
On-State Drain Current
ID(ON)
Diode Forward Voltage
VSD
Forward Transconductance
gfs
VGS=0V, ID=250uA
N-Ch
20
VGS=0V, ID=250uA
P-Ch
-20
VGS=4.5V, ID=0.95A
N-Ch
0.26
0.38
VGS=-4.5V, ID=-1.0A
P-Ch
0.42
0.52
VGS=2.5V, ID=0.75A
N-Ch
0.32
0.45
VGS=-2.5V, ID=-0.8A
P-Ch
0.58
0.70
VGS=1.8V, ID=0.65A
N-Ch
0.42
0.80
VGS=-1.8V, ID=-0.5A
P-Ch
0.75
0.95
VDS=VGS, ID=250uA
N-Ch
0.35
1.0
VDS=VGS, ID=-250uA
P-Ch
-0.35
-1.0
VDS=0V, VGS=±12V
N-Ch
100
VDS=0V, VGS=±12V
P-Ch
-100
VDS=20V, VGS=0V
N-Ch
1
VDS=-20V, VGS=0V
VDS=20V, VGS=0V
TJ=55℃
VDS=-20V, VGS=0V
TJ=55℃
VDS≧4.5V, VGS =5V
P-Ch
-1
N-Ch
5
P-Ch
-5
V
N-Ch
2
VDS≦-4.5V, VGS =-5V
P-Ch
-2
IS=0.5A, VGS=0V
N-Ch
0.8
1.2
IS=-0.5A, VGS=0V
P-Ch
-0.8
-1.2
VDS=10V, ID=1.2A
N-Ch
2.6
VDS=-10V, ID=-1.0A
P-Ch
1.5
N-Ch
1.2
2.0
P-Ch
1.1
1.8
N-Ch
0.2
P-Ch
0.3
N-Ch
0.3
P-Ch
0.2
N-Ch
15
25
P-Ch
18
30
N-Ch
20
30
Ω
V
nA
uA
A
V
S
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Time
td(on)
tr
N-Channel
VDS=10V, VGS=4.5V,
ID≡1.2A
P-Channel
VDS=-10V, VGS=-4.5V,
ID≡-1.0A
N-Channel
VDD=10V,RL=20Ω
ID=0.5A,
nC
VER 1.3
ns
3
ACE632
N&P Pair Enhancement Mode MOSFET
td(off)
Turn-Off Time
tf
VGEN=4.5V,RG=6Ω
P-Channel
VDD=-10V,RL=20Ω
ID=-0.5A, VGEN=-4.5V,
RG=6Ω
P-Ch
25
40
N-Ch
25
40
P-Ch
20
30
N-Ch
12
20
P-Ch
12
20
Typical Characteristics (N-Channel)
VER 1.3
4
ACE632
N&P Pair Enhancement Mode MOSFET
Typical Characteristics (N-Channel)
VER 1.3
5
ACE632
N&P Pair Enhancement Mode MOSFET
Typical Characteristics (N-Channel)
VER 1.3
6
ACE632
N&P Pair Enhancement Mode MOSFET
Typical Characteristics (P-Channel)
VER 1.3
7
ACE632
N&P Pair Enhancement Mode MOSFET
Typical Characteristics (P-Channel)
VER 1.3
8
ACE632
N&P Pair Enhancement Mode MOSFET
Typical Characteristics (P-Channel)
VER 1.3
9
ACE632
N&P Pair Enhancement Mode MOSFET
Packing Information
SC-70-6
VER 1.3
10
ACE632
N&P Pair Enhancement Mode MOSFET
Notes
ACE does not assume any responsibility for use as critical components in life support devices or systems
without the express written approval of the president and general counsel of ACE Electronics Co., LTD.
As sued herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and shoes failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be reasonably expected to result in
a significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can
be reasonably expected to cause the failure of the life support device or system, or to affect its safety
or effectiveness.
ACE Technology Co., LTD.
http://www.ace-ele.com/
VER 1.3
11