IC Transistor MOSFET IC DIP SMD Type DIP SMDType Type Type Product specification KO3416 SOT-23-3 Unit: mm +0.2 2.9-0.2 +0.1 0.4-0.05 ■ Features 1 ● RDS(ON) ＜ 26mΩ (VGS = 2.5V) 0.55 ● RDS(ON) ＜ 22mΩ (VGS = 4.5V) +0.2 1.6 -0.1 +0.2 2.8-0.2 ● ID = 6.5 A 0.4 3 ● VDS (V) = 20V 2 +0.1 0.95-0.1 +0.2 1.9-0.2 ● RDS(ON) ＜ 34mΩ (VGS = 1.8V) +0.05 0.1-0.01 +0.2 1.1 -0.1 D G 0-0.1 +0.1 0.38-0.1 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±8 V Continuous Drain Current *1 TA=25℃ ID Pulsed Drain Current *2 Power Dissipation *1 6.5 A 5.2 TA=70℃ IDM TA=25℃ PD 30 1.4 W 0.9 TA=70℃ Thermal Resistance.Junction-to-Ambient *1 t ≤ 10s Maximum Junction-to-Lead *3 Junction and Storage Temperature Range 90 ℃/W RθJL 60 ℃/W TJ, TSTG -55 to 150 ℃ RθJA 2 *1: The value of RθJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. *2: Repetitive rating, pulse width limited by junction temperature. *3. The RθJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. http://www.twtysemi.com [email protected] 4008-318-123 1 of 4 IC Transistor MOSFET IC DIP SMD Type DIP SMDType Type Type Product specification KO3416 ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Drain-Source Breakdown Voltage VDSS Zero Gate Voltage Drain Current IDSS Gate-Body leakage current Gate Threshold Voltage Testconditons Min 1 VDS=16V, VGS=0V ,TJ=55℃ 5 VDS=0V, VGS=±8V VGS(th) VDS=VGS ID=250μA 0.4 VGS=4.5V, ID=6.5A TJ=125℃ VGS=2.5V, ID=5.5A VGS=1.8V, ID=5A On state drain current ID(ON) gFS Forward Transconductance Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate resistance Rg Total Gate Charge Qg Gate Source Charge Qgs VGS=4.5V, VDS=5V μA 0.6 1 V 18 22 25 30 21 26 mΩ 26 34 mΩ VGS=0V, VDS=0V, f=1MHz VGS=4.5V, VDS=10V, ID=6.5A mΩ A 29 VGS=0V, VDS=10V, f=1MHz μA ±10 30 VDS=5V, ID=6.5A Unit V VDS=16V, VGS=0V IGSS RDS(ON) Max 20 ID=250μA, VGS=0V VGS=4.5V, ID=6.5A Static Drain-Source On-Resistance Typ S 1160 pF 187 pF 146 pF 1.5 Ω 16 nC 0.8 nC Gate Drain Charge Qgd 3.8 nC Turn-On DelayTime tD(on) 6.2 ns Turn-On Rise Time tr 12.7 ns Turn-Off DelayTime tD(off) Turn-Off Fall Time VGS=5V, VDS=10V, RL=1.5Ω,RGEN=3Ω tf Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Maximum Body-Diode Continuous Current IS Diode Forward Voltage VSD 51.7 ns 16 ns IF=6.5A, dI/dt=100A/μs 17.7 ns IF=6.5A, dI/dt=100A/μs 6.7 nC IS=1A,VGS=0V 0.76 2.5 A 1 V ■ Marking Marking A08K http://www.twtysemi.com [email protected] 4008-318-123 2 of 4 IC Transistor MOSFET IC DIP SMD Type DIP SMDType Type Type Product specification KO3416 ■ Typical Characteristics 20 30 8V VGS=5V VGS =2V 15 20 ID(A) ID(A) VGS =1.5V 10 10 125°C 5 VGS =1V 25°C 0 0 0 1 2 3 4 5 0.0 VDS(Volts) 0.5 1.0 Figure 1: On-Regions Characteristics 50 2.0 2.5 1.6 Normalize ON-Resistance ID=6.5A 40 RDS(ON)(mΩ) 1.5 VGS(Volts) Figure 2: Transfer Characteristics VGS =1.8V 30 VGS =2.5V 20 VGS =4.5V VGS=1.8V 1.4 VGS=2.5V VGS=4.5V 1.2 1.0 10 0 5 10 15 20 0.8 0 ID(A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 60 1E+01 ID=6.5A 1E+00 125°C 1E-01 40 IS(A) RDS(ON)(mΩ) 50 125°C 30 1E-02 1E-03 20 1E-04 25°C 25°C 1E-05 10 0 2 4 6 8 VGS(Volts) Figure 5: On-Resistance vs. Gate-Source Voltage http://www.twtysemi.com [email protected] 0.0 0.2 0.4 0.6 0.8 1.0 VSD(Volts) Figure 6: Body-Diode Characteristics 4008-318-123 3 of 4 IC Transistor MOSFET IC DIP SMD Type DIP SMDType Type Type Product specification KO3416 2000 5 VDS=10V ID=6.5A 1600 Capacitance (pF) VGS(Volts) 4 3 2 Ciss 1200 800 Crss 1 400 0 0 0 5 10 15 Coss 0 20 TJ(Max)=150°C TA=25°C 15 20 40 RDS(ON) limited TJ(Max)=150°C TA=25°C 10µs 30 100µs Power (W) ID (Amps) 10.0 10 VDS(Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 5 1ms 0.1s 10ms 1.0 20 10 1s 10s DC 0 0.001 0.1 0.1 1 10 100 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=90°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance http://www.twtysemi.com [email protected] 4008-318-123 4 of 4