ETC BD159/D

ON Semiconductor
Plastic Medium Power NPN
Silicon Transistor
BD159
. . . designed for power output stages for television, radio,
phonograph and other consumer product applications.
0.5 AMPERE
POWER TRANSISTOR
NPN SILICON
350 VOLTS
20 WATTS
• Suitable for Transformerless, Line–Operated Equipment
• Thermopad Construction Provides High Power Dissipation Rating for
High Reliability
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MAXIMUM RATINGS
Rating
Symbol
Max
Unit
VCEO
350
Vdc
Collector–Base Voltage
VCB
375
Vdc
Emitter–Base Voltage
VEB
5.0
Vdc
Collector Current — Continuous
Peak
IC
0.5
1.0
Adc
Base Current
IB
0.25
Adc
Total Device Dissipation @ TC = 25C
Derate above 25C
PD
20
0.16
Watts
W/C
TJ, Tstg
–65 to +150
C
Symbol
Max
Unit
θJC
6.25
C/W
Collector–Emitter Voltage
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
CASE 77–09
TO–225AA TYPE
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
BVCEO
350
—
Vdc
Collector Cutoff Current
(At rated voltage)
ICBO
—
100
µAdc
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
IEBO
—
100
µAdc
hFE
30
240
—
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 1.0 mAdc, IB = 0)
ON CHARACTERISTICS
DC Current Gain
(IC = 50 mAdc, VCE = 10 Vdc)
 Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 2
1
Publication Order Number:
BD159/D
BD159
PD, POWER DISSIPATION (WATTS)
25
1.0
V, VOLTAGE (VOLTS)
20
15
10
0.8
VBE @ IC/IB = 10
0.6
VBE @ VCE = 10 V
0.4
VCE(sat) @ IC/IB = 10
0.2
IC/IB = 5.0
5.0
0
20
40
60
80
100
120
140
0
160
10
20
TC, CASE TEMPERATURE (°C)
Figure 1. Power–Temperature Derating Curve
IC, COLLECTOR CURRENT (AMPS)
TJ = +25°C
1.0
0.7
0.5
500 µs
TJ = 150°C
0.3
dc
0.2
500
Figure 2. “On” Voltages
The Safe Operating Area Curves indicate IC – VCE limits
below which the device will not enter secondary breakdown.
Collector load lines for specific circuits must fall within the
applicable Safe Area to avoid causing a catastrophic failure.
To insure operation below, the maximum TJ,
power–temperature derating must be observed for both
steady state and pulse power conditions.
10 µs
1.0 ms
0.1
0.07
0.05
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
0.03
0.02
0.01
30
50
100
200 300
IC, COLLECTOR CURRENT (mA)
10
20
30
50
100
200
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
300
Figure 3. DC Safe Operating Area
300
VCE = 10 V
VCE = 2.0 V
hFE, DC CURRENT GAIN
200
TJ = 150°C
100
+ 100°C
70
50
+ 25°C
30
20
10
- 55°C
1.0
2.0
3.0
5.0
7.0
10
20
30
50
IC, COLLECTOR CURRENT (mAdc)
Figure 4. Current Gain
http://onsemi.com
2
70
100
200
300
500
BD159
PACKAGE DIMENSIONS
CASE 77–09
TO–225AA TYPE
ISSUE W
–B–
U
F
Q
–A–
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
C
M
1 2 3
H
K
J
V
G
S
R
0.25 (0.010)
A
M
M
B
M
D 2 PL
0.25 (0.010)
M
A
M
B
M
DIM
A
B
C
D
F
G
H
J
K
M
Q
R
S
U
V
INCHES
MIN
MAX
0.425
0.435
0.295
0.305
0.095
0.105
0.020
0.026
0.115
0.130
0.094 BSC
0.050
0.095
0.015
0.025
0.575
0.655
5 TYP
0.148
0.158
0.045
0.065
0.025
0.035
0.145
0.155
0.040
---
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
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3
MILLIMETERS
MIN
MAX
10.80
11.04
7.50
7.74
2.42
2.66
0.51
0.66
2.93
3.30
2.39 BSC
1.27
2.41
0.39
0.63
14.61
16.63
5 TYP
3.76
4.01
1.15
1.65
0.64
0.88
3.69
3.93
1.02
---
BD159
Thermopad is a trademark of Semiconductor Components Industries, LLC (SCILLC)
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
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including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
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alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
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4
BD159/D