CYStech Electronics Corp. Spec. No. : C851N3 Issued Date : 2004.02.27 Revised Date : 2004.07.01 Page No. : 1/4 Low Vcesat PNP Epitaxial Planar Transistor BTB1386LN3 Features • Low VCE(sat), VCE(sat)=-0.6 V (typical), at IC / IB = -4A / -0.1A • Excellent DC current gain characteristics • Complementary to BTD2098LN3 Symbol Outline BTB1386LN3 SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC(DC) IC(Pulse) PD RθJA Tj Tstg Limits -20 -15 -6 -5 -10 (Note ) 225 556 150 -55~+150 Unit V V V A mW °C/W °C °C Note : 1. Single Pulse Pw≦350µs, Duty≦2%. BTB1386LN3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C851N3 Issued Date : 2004.02.27 Revised Date : 2004.07.01 Page No. : 2/4 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE fT Cob Min. -20 -15 -6 120 - Typ. 120 60 Max. -0.5 -0.5 -1.0 560 - Unit V V V µA µA V MHz pF Test Conditions IC=-50µA, IE=0 IC=-1mA, IB=0 IE=-50µA, IC=0 VCB=-15V, IE=0 VEB=-5V, IC=0 IC=-4A, IB=-0.1A VCE=-2V, IC=-0.5A VCE=-6V, IC=-50mA, f=30MHz VCB=-20V, f=1MHz *Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% Classification Of hFE Rank Range BTB1386LN3 Q 120~270 R 180~390 S 270~560 CYStek Product Specification Spec. No. : C851N3 Issued Date : 2004.02.27 Revised Date : 2004.07.01 Page No. : 3/4 CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current Saturation Voltage vs Collector Current 1000 10000 VCE(SAT) Saturation Voltage---(mV) Current Gain---HFE VCE=5V 100 VCE=2V VCE=1V 1000 IC=100IB IC=60IB 100 10 IC=30IB IC=10IB 1 10 1 10 100 1000 1 10000 Collector Current---IC(mA) 100 1000 10000 Collector Current---IC(mA) Saturation Voltage vs Collector Current Power Derating Curve 10000 250 VBE(SAT) @ IC=10IB Power Dissipation---PD(mW) Saturation Voltage---(mV) 10 1000 100 200 150 100 50 0 1 BTB1386LN3 10 100 1000 Collector Current---IC(mA) 10000 0 50 100 150 Ambient Temperature---TA(℃) 200 CYStek Product Specification Spec. No. : C851N3 Issued Date : 2004.02.27 Revised Date : 2004.07.01 Page No. : 4/4 CYStech Electronics Corp. SOT-23 Dimension Marking: A L 3 B TE BH S 2 1 G V 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 C Style: Pin 1.Base 2.Emitter 3.Collector D K H J *: Typical Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040 DIM A B C D G H Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10 DIM J K L S V Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256 Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTB1386LN3 CYStek Product Specification