Spec. No. : C849I3 Issued Date : 2003.04.18 Revised Date : Page No. : 1/4 CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD1864AI3 Features • Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 2A / 0.2A • Excellent current gain characteristics • Complementary to BTB1243AI3 Symbol Outline BTD1864AI3 TO-251 B：Base C：Collector E：Emitter B E C Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol Limits Unit VCBO VCEO VEBO IC(DC) IC(Pulse) Pd(TA=25℃) Pd(TC=25℃) Tj Tstg 40 30 5 3 7 1 15 150 -55~+150 V V V *1 A W °C °C Note : *1. Single Pulse Pw=10ms BTD1864AI3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C849I3 Issued Date : 2003.04.18 Revised Date : Page No. : 2/4 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE1 *hFE2 *hFE3 fT Cob Min. 40 30 5 52 82 82 - Typ. 0.25 90 45 Max. 1 1 0.5 2 560 - Unit V V V µA µA V V MHz pF Test Conditions IC=50µA, IE=0 IC=1mA, IB=0 IE=50µA, IC=0 VCB=30V. IE=0 VEB=4V,IC=0 IC=2A, IB=0.2A IC=2A, IB=0.2A VCE=2V, IC=20mA VCE=2V, IC=0.1A VCE=2V, IC=1A VCE=5V, IC=0.1A, f=100MHz VCB=10V, f=1MHz *Pulse Test : Pulse Width ≤380us, Duty Cycle≤2% Classification Of hFE2 Rank Range BTD1864AI3 P 82~180 Q 120~270 R 180~390 S 270~560 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C849I3 Issued Date : 2003.04.18 Revised Date : Page No. : 3/4 Characteristic Curves Saturation Voltage vs Collector Current Current Gain vs Collector Current 1000 1000 Current Gain---HFE Saturation Voltage---(mV) VCE=2V VCESAT@IC=20IB 100 10 1 100 1 10 100 1000 Collector Current---IC(mA) 1 10000 10 100 1000 Collector Current---IC(mA) Saturation Voltage vs Collector Current Power Derating Curve 1000 Power Dissipation---PD(W) Saturation Voltage---(mV) 16 VBESAT@IC=10IB 100 0.1 1 10 100 1000 Collector Current---IC(mA) 14 12 10 8 6 4 2 0 0 50 100 150 200 Case Temperature---TC(℃) Power Derating Curve Power Dissipation---PD(W) 1.2 1 0.8 0.6 0.4 0.2 0 0 50 100 150 200 Ambient Temperature---TA(℃) BTD1864AI3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C849I3 Issued Date : 2003.04.18 Revised Date : Page No. : 4/4 TO-251 Dimension A B C Marking: D D1864A F G 3 K E I H 2 1 Style: Pin 1.Base 2.Collector 3.Emitter 3-Lead TO-251 Plastic Package CYStek Package Code: I3 J *: Typical Inches Min. Max. 0.0177 0.0217 0.0354 0.0591 0.0177 0.0236 0.0866 0.0945 0.2520 0.2677 0.2677 0.2835 DIM A B C D E F Millimeters Min. Max. 0.45 0.55 0.90 1.50 0.45 0.60 2.20 2.40 6.40 6.80 6.80 7.20 DIM G H I J K Inches Min. Max. 0.2559 *0.1811 0.0354 0.0315 0.2047 0.2165 Millimeters Min. Max. 6.50 *4.60 0.90 0.80 5.20 5.50 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTD1864AI3 CYStek Product Specification