MITSUBISHI CM1200HC-90R

< HVIGBT MODULES >
CM1200HC-90R
HIGH POWER SWITCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
CM1200HC-90R






IC ································································ 1200A
VCES ·························································· 4500V
1-element in a pack
Insulated type
LPT-IGBT / Soft Recovery Diode
AlSiC baseplate
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
November 2012 HVM-1057-E
Dimensions in mm
1
< HVIGBT MODULES >
CM1200HC-90R
HIGH POWER SWITCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MAXIMUM RATINGS
Symbol
Item
VCES
Collector-emitter voltage
VGES
IC
ICRM
IE
IERM
Ptot
Viso
Ve
Tj
Tjop
Tstg
tpsc
Gate-emitter voltage
Collector current
Emitter current
(Note 2)
Maximum power dissipation (Note 3)
Isolation voltage
Partial discharge extinction voltage
Junction temperature
Operating junction temperature
Storage temperature
Short circuit pulse width
Conditions
VGE = 0V, Tj = −40…+125°C
VGE = 0V, Tj = −50°C
VCE = 0V, Tj = 25°C
DC, Tc = 85°C
Pulse (Note 1)
DC
Pulse (Note 1)
Tc = 25°C, IGBT part
RMS, sinusoidal, f = 60Hz, t = 1 min.
RMS, sinusoidal, f = 60Hz, QPD ≤ 10 pC
Ratings
4500
4400
±20
1200
2400
1200
2400
12500
6000
3500
−50 ~ +150
−50 ~ +125
−55 ~ +125
10
VCC = 3200V, VCE ≤ VCES, VGE =15V, Tj =125°C
Unit
V
V
A
A
A
A
W
V
V
°C
°C
°C
s
ELECTRICAL CHARACTERISTICS
Symbol
Item
Conditions
Tj = 25°C
Tj = 125°C
ICES
Collector cutoff current
VCE = VCES, VGE = 0V
VGE(th)
IGES
Cies
Coes
Cres
QG
Gate-emitter threshold voltage
Gate leakage current
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
VCE = 10 V, IC = 120 mA, Tj = 25°C
VGE = VGES, VCE = 0V, Tj = 25°C
VCEsat
Collector-emitter saturation voltage
td(on)
Turn-on delay time
tr
Turn-on rise time
Eon(10%)
Turn-on switching energy
(Note 5)
Eon
Turn-on switching energy
(Note 6)
td(off)
Turn-off delay time
tf
Turn-off fall time
Eoff(10%)
Turn-off switching energy
(Note 5)
Eoff
Turn-off switching energy
(Note 6)
December 2012 HVM-1057-E
VCE = 10 V, VGE = 0 V, f = 100 kHz
Tj = 25°C
VCC = 2800V, IC = 1200A, VGE = ±15V
IC = 1200 A (Note 4)
VGE = 15 V
VCC = 2800 V
IC = 1200 A
VGE = ±15 V
RG(on) = 2.7 Ω
Ls = 150 nH
Inductive load
VCC = 2800 V
IC = 1200 A
VGE = ±15 V
RG(off) = 10 Ω
Ls = 150 nH
Inductive load
2
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Min
―
―
5.8
−0.5
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
Limits
Typ
―
16.0
6.3
―
175.0
11.0
5.0
13.5
3.50
4.40
1.00
0.95
0.28
0.30
4.30
5.10
4.60
5.50
3.60
3.80
0.35
0.45
2.90
3.85
3.20
4.30
Max
16.0
―
6.8
0.5
―
―
―
―
―
5.10
―
1.50
―
0.50
―
―
―
―
―
5.00
―
1.00
―
―
―
―
Unit
mA
V
µA
nF
nF
nF
µC
V
µs
µs
J
J/P
µs
µs
J
J
< HVIGBT MODULES >
CM1200HC-90R
HIGH POWER SWITCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
ELECTRICAL CHARACTERISTICS (continuation)
Symbol
Item
Conditions
(Note 2)
VEC
Emitter-collector voltage
trr
Reverse recovery time
(Note 2)
Irr
Reverse recovery current
(Note 2)
Qrr
Reverse recovery charge
(Note 2)
Reverse recovery energy
(Note 2)
Erec(10%)
Erec
(Note 5)
Reverse recovery energy
IE = 1200 A (Note 4)
VGE = 0 V
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
VCC = 2800 V
IC = 1200 A
VGE = ±15 V
RG(on) = 2.7 Ω
Ls = 150 nH
Inductive load
(Note 2)
(Note 6)
Min
—
—
—
—
—
—
—
—
—
—
—
—
Limits
Typ
2.50
2.80
0.70
0.90
1100
1200
1000
1500
1.30
2.10
1.55
2.40
Max
—
3.40
—
—
—
—
—
—
—
—
—
—
Min
―
―
―
Limits
Typ
―
―
6.0
Max
10.0
19.0
―
Min
7.0
3.0
1.0
―
600
19.5
32.0
―
―
―
Limits
Typ
―
―
―
1.2
―
―
―
11.0
0.12
1.7
Max
22.0
6.0
3.0
―
―
―
―
―
―
―
Unit
V
µs
A
µC
J
J
THERMAL CHARACTERISTICS
Symbol
Rth(j-c)Q
Rth(j-c)D
Rth(c-s)
Item
Thermal resistance
Contact thermal resistance
Conditions
Junction to Case, IGBT part
Junction to Case, FWDi part
Case to heat sink, grease = 1W/m·k, D(c-s) = 100m
Unit
K/kW
K/kW
K/kW
MECHANICAL CHARACTERISTICS
Symbol
Mt
Ms
Mt
m
CTI
da
ds
LP CE
RCC’+EE’
rg
Item
Mounting torque
Mass
Comparative tracking index
Clearance
Creepage distance
Parasitic stray inductance
Internal lead resistance
Internal gate resistance
Conditions
M8 : Main terminals screw
M6 : Mounting screw
M4 : Auxiliary terminals screw
TC = 25°C
TC = 25°C
Note1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating.
2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
3. Junction temperature (Tj) should not exceed Tjmax rating (150°C).
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
5. Eon(10%) / Eoff(10%) / Erec(10%) are the integral of 0.1VCE x 0.1IC x dt.
6. Definition of all items is according to IEC 60747, unless otherwise specified.
December 2012 HVM-1057-E
3
Unit
N·m
N·m
N·m
kg
―
mm
mm
nH
mΩ
Ω
< HVIGBT MODULES >
CM1200HC-90R
HIGH POWER SWITCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
2500
2500
Tj = 25 °C
VCE = VGE
VGE = 1 3V
2000
2000
VGE = 1 5V
VGE = 11V
1500
1000
VGE = 10V
Coll ector Current [A]
Coll ector Current [A]
VGE = 16V
1500
1000
Tj = 1 25°C
500
Tj = 2 5°C
500
0
0
0
2
4
6
8
0
Collector - Emitter Voltage [V]
4
8
12
16
Gate - Emitter Voltage [V]
FREE-WHEEL DIODE FORWARD
CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
2500
2500
VGE = 15 V
2000
Tj = 25 °C
Tj = 25 °C
1500
Emi tter Current [A]
Coll ector Current [A]
2000
Tj = 1 25°C
1000
500
1500
Tj = 1 25 °C
1000
500
0
0
0
2
4
6
8
0
Collector-Emitter Saturation Voltage [V]
December 2012 HVM-1057-E
1
2
3
4
Emitter-Coll ector Voltage [V]
4
5
< HVIGBT MODULES >
CM1200HC-90R
HIGH POWER SWITCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
CAPACITANCE CHARACTERISTICS
(TYPICAL)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
1000
20
VCE = 28 00V, IC = 1 200 A
Tj = 2 5° C
15
Gate-Emitter Voltage [V]
Capa citance [nF]
Cies
100
10
Co es
10
5
0
-5
Cre s
-10
VGE = 0V, Tj = 2 5° C
f = 10 0kHz
1
-15
0.1
1
10
100
0
5
Coll ector-Emitter Voltage [V]
10
15
20
Gate Charge [µC]
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
16
VCC = 280 0V, VGE = ±1 5V
RG( on) = 2.7 Ω, R G(off ) = 10Ω
LS = 15 0nH, Tj = 125 °C
Indu ctive lo ad
12
Eon
VCC = 28 00V, IC = 1 200 A
VGE = ±1 5V, L S = 1 50n H
Tj = 1 25°C, Ind uctive load
10
12
10
Eo ff
8
6
4
Erec
Switching Energies [J/pulse]
Switching Energies [J/pulse]
14
2
8
6
Eon
4
2
Ere c
0
0
0
500
1000
1500
2000
2500
0
Collector Curre nt [A]
December 2012 HVM-1057-E
1
2
3
Gate resistor [Ohm]
5
4
5
< HVIGBT MODULES >
CM1200HC-90R
HIGH POWER SWITCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
HALF-BRIDGE SWITCHING TIME
CHARACTERISTICS (TYPICAL)
12
100
10
10
Switching Times [µs]
Switching Energies [J/pulse]
VCC = 2 800 V, VGE = ±15 V
RG(on ) = 2.7Ω, RG( off) = 1 0Ω
LS = 1 50 nH, Tj = 1 25°C
In ducti ve loa d
VCC = 28 00 V, I C = 1 200 A
VG E = ±1 5V, L S = 1 50n H
Tj = 1 25°C, In ductive l oa d
8
6
Eoff
4
td(o ff)
td(on )
1
tf
0.1
tr
2
0
0.01
0
5
10
15
20
100
Gate resistor [Ohm]
100
REVERSE BIAS SAFE OPERATING AREA
(RBSOA)
3000
10000
VCC  32 00 V, VGE = ± 15V
Tj = 125 °C, RG(o ff) = 10 Ω
10
1000
trr
100
100
2500
Coll ector Current [A]
Irr
Reverse Recovery Current [A]
Reverse Recovery Time [µs]
VCC = 28 00 V, VGE = ± 15V
RG(on) = 2.7Ω, LS = 150 nH
Tj = 1 25°C, In ductive l oa d
0.1
1500
1000
0
0
10000
1000
2000
3000
4000
Collector-Emitter Voltage [V]
Emitter Current [A]
December 2012 HVM-1057-E
2000
500
10
1000
10000
Coll ector Current [A]
FREE-WHEEL DIODE REVERSE RECOVERY
CHARACTERISTICS (TYPICAL)
1
1000
6
5000
< HVIGBT MODULES >
CM1200HC-90R
HIGH POWER SWITCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
SHORT CIRCUIT
SAFE OPERATING AREA (SCSOA)
FREE-WHEEL DIODE REVERSE RECOVERY
SAFE OPERATING AREA (RRSOA)
12
3000
VCC  32 00V, VGE = ±1 5V
Tj = 1 25°C, R G(on) = 2.7Ω, RG( off) = 1 0Ω
VCC  32 00 V, di /d t < 6 kA/µs
Tj = 125 °C
Reverse Recovery Current [A]
Coll ector Current [kA]
10
8
6
4
2
2500
2000
1500
1000
500
0
0
0
1000
2000
3000
4000
5000
0
Collector-Emitter Vol tage [V]
1000
2000
3000
4000
5000
Emitte r-Collector Voltage [V]
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
Normalized Transient Thermal impedance
1.2
Rth(j-c)Q = 10 .0 K/kW
Rth(j-c)R = 1 9.0K/kW
1
Z
(t ) 
th( j  c )
n
 R 1 exp
i 1
0.8
0.6
0.1
1

2
0.1893
3
0.4044
4
0.3967
ti [sec] :
0.0001
0.0058
0.0602
0.3512
10
Ti me [s]
December 2012 HVM-1057-E

1
0.0096
0.2
0.01
 t 
 


i 

Ri [K/kW] :
0.4
0
0.001


i

7
< HVIGBT MODULES >
CM1200HC-90R
HIGH POWER SWITCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
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© 2012 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.
December 2012 HVM-1057-E
8