ETC 2SB945P

Power Transistors
2SB0945 (2SB945)
Silicon PNP epitaxial planar type
For power switching
Complementary to 2SD1270
Unit: mm
●
■
0.7±0.1
Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
–130
V
Collector to emitter voltage
VCEO
–80
V
Emitter to base voltage
VEBO
–7
V
Peak collector current
ICP
–10
A
Collector current
IC
–5
A
Collector power TC=25°C
40
PC
Ta=25°C
dissipation
Junction temperature
Tj
Storage temperature
Tstg
■ Electrical Characteristics
4.2±0.2
7.5±0.2
16.7±0.3
φ3.1±0.1
1.4±0.1
0.8±0.1
150
˚C
–55 to +150
˚C
1.3±0.2
0.5 +0.2
–0.1
2.54±0.25
5.08±0.5
1
2
3
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
W
2
2.7±0.2
4.0
●
Low collector to emitter saturation voltage VCE(sat)
Satisfactory linearity of foward current transfer ratio hFE
Large collector current IC
Full-pack package which can be installed to the heat sink with
one screw
14.0±0.5
●
4.2±0.2
5.5±0.2
Solder Dip
■ Features
●
10.0±0.2
(TC=25˚C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector cutoff current
ICBO
VCB = –100V, IE = 0
–10
µA
Emitter cutoff current
IEBO
VEB = –5V, IC = 0
–50
µA
Collector to emitter voltage
VCEO
IC = –10mA, IB = 0
–80
hFE1
VCE = –2V, IC = – 0.1A
45
hFE2*
VCE = –2V, IC = –2A
90
Collector to emitter saturation voltage
VCE(sat)
IC = –4A, IB = – 0.2A
Base to emitter saturation voltage
VBE(sat)
IC = –4A, IB = – 0.2A
Transition frequency
fT
VCE = –10V, IC = – 0.5A, f = 10MHz
Turn-on time
ton
Storage time
tstg
Fall time
tf
Forward current transfer ratio
*h
FE2
IC = –2A, IB1 = – 0.2A, IB2 = 0.2A
V
260
– 0.5
–1.5
V
V
30
MHz
0.13
µs
0.5
µs
0.13
µs
Rank classification
Rank
Q
P
hFE2
90 to 180
130 to 260
Note: Ordering can be made by the common rank (PQ rank hFE2 = 90 to 260) in the rank classification.
Note.) The Part number in the Parenthesis shows conventional part number.
1
Power Transistors
2SB0945
PC — Ta
IC — VCE
VCE(sat) — IC
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) With a 50 × 50 × 2mm
Al heat sink
(4) Without heat sink
(PC=2W)
30
(1)
20
10
–100mA
–6
–80mA
–60mA
–5
–40mA
–4
–30mA
–3
–2
–10mA
–1
(4)
0
0
20
40
60
80 100 120 140 160
0
Ambient temperature Ta (˚C)
–8
–10
TC=–25˚C
100˚C
– 0.03
–3
1000
300
TC=100˚C
100
30
10
3
–1
–3
10
–100
Collector to base voltage VCB (V)
–1
–3
–10
Area of safe operation (ASO)
Pulsed tw=1ms
Duty cycle=1%
IC/IB=10
(–IB1=IB2)
VCC=–50V
TC=25˚C
10
3
1
tstg
0.3
ton
0.1
Non repetitive pulse
TC=25˚C
–30
–10
ICP
IC
–3
t=0.5ms
10ms
1ms
–1
DC
– 0.3
– 0.1
tf
– 0.03
0.01
–30
10
Collector current IC (A)
0.03
3
–10
30
–100
30
Switching time ton,tstg,tf (µs)
30
–3
100
1
– 0.01 – 0.03 – 0.1 – 0.3
–10
ton, tstg, tf — IC
100
–1
300
3
100
300
1
– 0.1 – 0.3
25˚C
–25˚C
Cob — VCB
1000
–10
VCE=–10V
f=10MHz
TC=25˚C
3000
Collector current IC (A)
10000
–3
fT — IC
3000
1
– 0.01 – 0.03 – 0.1 – 0.3
–10
IE=0
f=1MHz
TC=25˚C
–1
Collector current IC (A)
10000
Collector current IC (A)
3000
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3
Transition frequency fT (MHz)
–3
–1
–25˚C
VCE=–2V
Forward current transfer ratio hFE
Base to emitter saturation voltage VBE(sat) (V)
–6
1000
–10
– 0.1
Collector output capacitance Cob (pF)
–4
IC/IB=20
–30
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3
25˚C
TC=100˚C
hFE — IC
– 0.3
2
–2
10000
–1
–1
Collector to emitter voltage VCE (V)
VBE(sat) — IC
–100
25˚C
–3
– 0.03
–3mA
0
–10
– 0.1
(2)
(3)
IC/IB=20
–30
– 0.3
–20mA
Collector current IC (A)
40
TC=25˚C
IB=–120mA
–7
Collector to emitter saturation voltage VCE(sat) (V)
–100
–8
Collector current IC (A)
Collector power dissipation PC (W)
50
0
– 0.8
–1.6
–2.4
Collector current IC (A)
–3.2
– 0.01
–1
–3
–10
–30
–100 –300 –1000
Collector to emitter voltage VCE (V)
Power Transistors
2SB0945
Rth(t) — t
Thermal resistance Rth(t) (˚C/W)
103
(1) Without heat sink
(2) With a 100 × 100 × 2mm Al heat sink
102
(1)
(2)
10
1
10–1
10–2
10–4
10–3
10–2
10–1
1
10
102
103
104
Time t (s)
3
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2001 MAR