Power Transistors 2SC3611 Silicon NPN epitaxial planar type Unit: mm For video amplifier 8.0+0.5 –0.1 3.2±0.2 3.05±0.1 3.8±0.3 1.9±0.1 • High transition frequency fT • Small collector output capacitance Cob • Wide current range • TO-126B package which requires no insulation plate for installation to the heat sink 16.0±1.0 ■ Features 11.0±0.5 φ 3.16±0.1 ■ Absolute Maximum Ratings TC = 25°C 0.75±0.1 Parameter Symbol Rating Collector to base voltage VCBO 110 V Collector to emitter voltage VCER 100 V VCEO 50 V Emitter to base voltage VEBO 3.5 V Peak collector current ICP 300 mA Collector current IC 150 mA 1.2 W Collector power dissipation TC = 25°C PC 0.5±0.1 Unit 0.5±0.1 4.6±0.2 1 2 1.76±0.1 2.3±0.2 1 : Base 2 : Collector 3 : Emitter TO-126B-A1 Package 3 4.0 * Ta = 25°C Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Note) *: With a 100 × 100 × 2 mm A1 heat sink ■ Electrical Characteristics TC = 25°C Parameter Symbol Conditions Min Typ Max Unit 10 µA Collector cutoff current ICEO VCE = 35 V, IB = 0 Collector to base voltage VCBO IC = 100 µA, IE = 0 110 V Collector to emitter voltage VCER IC = 500 µA, RBE = 470 Ω 100 V VCEO IC = 1 mA, IB = 0 50 V VEBO IE = 100 µA, IC = 0 3.5 V hFE VCE = 5 V, IC = 100 mA 20 VCE(sat) IC = 150 mA, IB = 15 mA Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance 0.5 V fT1 VCB = 10 V, IE = −10 mA, f = 200 MHz 300 MHz fT2 VCB = 10 V, IE = −110 mA, f = 200 MHz 350 MHz Cob VCB = 30 V, IE = 0, f = 1 MHz 3 pF 201 2SC3611 Power Transistors PC T a IC VCE 3 2 (2) 1 4.5mA 4.0mA 3.5mA 3.0mA 120 2.5mA 2.0mA 80 1.5mA 1.0mA 40 TC=100˚C 100 IB=5.0mA 160 VCE=5V Collector current IC (mA) 200 Collector current IC (mA) Collector power dissipation PC (W) (1) 4 120 TC=25˚C (1)With a 100×100×2mm Al heat sink (2)Without heat sink 25˚C –25˚C 80 60 40 20 0.5mA 0 0 0 40 80 120 160 200 240 0 0 Ambient temperature Ta (˚C) 2 4 6 8 10 12 0 Collector to emitter voltage VCE (V) VCE(sat) IC 0.2 0.4 0.6 VCE=5V IC/IB=5 1000 0.3 TC=100˚C 0.1 –25˚C 25˚C 0.03 1 10 3 30 100 300 25˚C 100 TC=100˚C 30 –25˚C 10 VCB=10V f=200MHz TC=25˚C 300 Collector current IC (mA) 3 1000 10 30 100 4 3 2 t=10ms 100 IC t=100ms t=1s 30 10 3 1 1 0.3 0 0.1 1 3 10 30 100 Collector to base voltage VCB (V) 400 300 200 100 1 3 10 30 100 300 0 –1 –3 –10 –30 –100 –300 –1000 Emitter current IE (mA) Single pulse TC=25˚C ICP 300 Collector current IC (A) Collector output capacitance Cob (pF) 1 Area of safe operation (ASO) IE=0 f=1MHz TC=25˚C 5 0.3 Collector current IC (mA) Cob VCB 6 500 3 1 0.1 0.01 202 Transition frequency fT (MHz) 3000 1 1.0 fT I E 600 10 3 0.8 Base to emitter voltage VBE (V) hFE IC 10000 Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) (V) IC VBE 240 5 1000 Collector to emitter voltage VCE (V) Power Transistors 2SC3611 Rth(t) t Thermal resistance Rth(t) (˚C/W) 104 free air 103 102 10 1 10–1 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 203 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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