Power Transistors 2SD2528 Silicon NPN epitaxial planar type Unit: mm For power amplification with high forward current transfer ratio 3.0±0.5 2.9±0.2 ■ Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector to base voltage VCBO 80 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 6 V Peak collector current ICP 10 A Collector current IC 5 A Base current IB 1 A 40 W TC = 25°C PC Ta = 25°C φ 3.2±0.1 15.0±0.5 • High forward current transfer ratio hFE • Satisfactory linearity of forward current transfer ratio hFE • Full-pack package which can be installed to the heat sink with one screw 13.7±0.2 4.2±0.2 Solder Dip ■ Features Collector power dissipation 4.6±0.2 9.9±0.3 1.4±0.2 1.6±0.2 2.6±0.1 0.8±0.1 0.55±0.15 2.54±0.30 5.08±0.50 1 2 3 1: Base 2: Collector 3: Emitter TO-220D Package 2.0 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C ■ Electrical Characteristics TC = 25°C Parameter Symbol Collector cutoff current Conditions Min ICBO VCB = 80 V, IE = 0 Emitter cutoff current IEBO VEB = 6 V, IC = 0 Collector to emitter voltage VCEO IC = 25 mA, IB = 0 60 hFE VCE = 4 V, IC = 1 A 500 VCE(sat) IC = 4 A, IB = 0.1 A Forward current transfer ratio * Collector to emitter saturation voltage Typ Max Unit 100 µA 100 µA V 2 000 0.3 V Transition frequency fT VCE = 12 V, IC = 0.4 A, f = 10 MHz 30 MHz Turn-on time ton IC = 4 A, IB1 = 0.08 A, IB2 = − 0.08 A, 0.4 µs Storage time tstg VCC = 50 V 2.0 µs Fall time tf 0.6 µs Note) *: Rank classification Rank hFE P Q 800 to 2 000 500 to 1 200 1 2SD2528 Power Transistors 30 20 (2) 10 TC=25˚C 6 (3) (4) IB=10mA 5 4 3mA 3 2mA 2 1 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 4 VBE(sat) IC 8 10 12 1 10–1 10–2 10–3 10–1 1 10 Collector current IC (A) hFE IC fT I C 104 300 10 1 10–1 10–2 10–1 1 Transition frequency fT (MHz) Forward current transfer ratio hFE IC/IB=50 103 102 10 10–2 10 10–1 1 10 Collector current IC (A) Collector current IC (A) ton, tstg, tf IC Area of safe operation (ASO) 100 Pulsed tw=1ms Duty cycle=1% IC/IB=50 (IB1=–IB2) VCC=50V TC=25˚C 30 10 tstg 3 tf 1 ton 0.3 0.1 ICP 10 t=1ms IC 10ms 3 1s 1 0.3 0.1 0.03 Non repetitive pulse TC=25˚C 0.01 0 1 2 3 4 5 6 7 Collector current IC (A) 8 1 3 10 30 VCE=12V f=10MHz TC=25˚C 100 30 10 3 0.003 0.01 0.03 0.1 0.3 1 Collector current IC (A) 30 Collector current IC (A) Base to emitter saturation voltage VBE(sat) (V) 6 10 Collector to emitter voltage VCE (V) 102 Switching time ton,tstg,tf (µs) 9mA 8mA 7mA 6mA 5mA 4mA 1mA 0 2 VCE(sat) IC 7 Collector current IC (A) Collector power dissipation PC (W) (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (1) 40 IC VCE 8 Collector to emitter saturation voltage VCE(sat) (V) PC T a 50 100 Collector to emitter voltage VCE (V) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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