e PTB 20078 2.5 Watts, 1525–1660 MHz INMARSAT RF Power Transistor Description The 20078 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1525 to 1660 MHz. Rated at 2.5 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 2.5 Watts, 1525–1660 MHz Class AB Characteristics Gold Metallization Silicon Nitride Passivated Surface Mountable Available in Tape and Reel Typical Output Power vs. Input Power Output Power (Watts) 4.5 4.0 3.5 3.0 200 78 2.5 LO 2.0 1.5 VCC = 26 V 1.0 ICQ = 20 mA f = 1.66 GHz 0.5 TC OD E 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 Package 20227 Input Power (Watts) Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Voltage VCER 50 Vdc Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage (collector open) VEBO 4.0 Vdc Collector Current (continuous) IC 0.5 Adc Total Device Dissipation at Tflange = 25°C PD Above 25°C derate by 10.0 Watts 0.057 W/°C Storage Temperature Tstg 150 °C Thermal Resistance (Tflange = 70°C) RθJC 17.5 °C/W 1 9/28/98 e PTB 20078 Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Breakdown Voltage C to E VBE = 0 V, IC = 5 mA V(BR)CES 50 — — Volts Breakdown Voltage C to E IB = 0 A, IC = 10 mA, RBE = 22 Ω V(BR)CER 50 — — Volts Breakdown Voltage E to B IC = 0 A, IE = 5 mA V(BR)EBO 4 5 — Volts DC Current Gain VCE = 5 V, IC = 250 mA hFE 20 40 — — Symbol Min Typ Max Units Gpe 9 11.0 — dB P-1dB 2.5 3.5 — Watts Ψ — — 5:1 — RF Specifications (100% Tested) Characteristic Gain (VCC = 26 Vdc, Pout = 1.0 W, ICQ = 20 mA, f = 1.525; 1.66 GHz) Power Out at 1 dB Compression (VCC = 26 Vdc, ICQ = 20 mA, f = 1.525; 1.66 GHz) Load Mismatch Tolerance (VCC = 26 Vdc, Pout = 2.5 W, ICQ = 20 mA f = 1.660 GHz—all phase angles at frequency of test) Impedance Data (data shown for fixed-tuned broadband circuit) (VCC = 26 Vdc, Pout = 2.5 W, ICQ = 20 mA) Z Source Frequency Z Load Z Source Z Load GHz R jX R jX 1.525 16.9 0.5 12.9 23.8 1.593 13.7 2.3 12.9 25.9 1.660 11.3 4.6 12.9 27.7 Z0 = 50 Ω 2 e PTB 20078 Typical Performance Gain vs. Frequency (as measured in a broadband circuit) 15 Gain (dB) 12 9 6 VCC = 26 V 3 ICQ = 20 mA Pin = .07 W 0 1.50 1.55 1.60 1.65 1.70 Frequency (GHz) Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: [email protected] www.ericsson.com/rfpower 3 Specifications subject to change without notice. LF © 1996 Ericsson Inc. EUS/KR 1301-PTB 20078 Uen Rev. C 09-28-98