Product specification AP2307GN ▼ Simple Drive Requirement ▼ Small Package Outline D ▼ Surface Mount Device BVDSS -16V RDS(ON) 60mΩ ID - 4A S SOT-23 Description G D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, , low on-resistance and cost-effectiveness. G S The SOT-23 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. Absolute Maximum Ratings Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ Rating Units -16 V ±8 V 3 -4 A 3 -3.3 A Continuous Drain Current Continuous Drain Current 1 IDM Pulsed Drain Current -12 A PD@TA=25℃ Total Power Dissipation 1.38 W Linear Derating Factor 0.01 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient http://www.twtysemi.com 3 [email protected] Max. Value Unit 90 ℃/W 4008-318-123 1 of 2 Product specification AP2307GN Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. -16 - - V - -0.01 - V/℃ VGS=-4.5V, ID=-4A - - 60 mΩ VGS=-2.5V, ID=-3.0A - - 70 mΩ VGS=-1.8V, ID=-2.0A - - 90 mΩ VDS=VGS, ID=-250uA - - -1.0 V BVDSS Drain-Source Breakdown Voltage ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS 2 VDS=-5V, ID=-4A - 12 - S o VDS=-16V, VGS=0V - - -1 uA o Drain-Source Leakage Current (Tj=70 C) VDS=-12V, VGS=0V - - -25 uA Gate-Source Leakage VGS=±8V - - ±100 nA ID=-4A - 15 24 nC Drain-Source Leakage Current (Tj=25 C) IGSS VGS=0V, ID=-250uA Max. Units 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=-12V - 1.3 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 4 - nC VDS=-10V - 8 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=-1A - 11 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=-10V - 54 - ns tf Fall Time RD=10Ω - 36 - ns Ciss Input Capacitance VGS=0V - 985 1580 pF Coss Output Capacitance VDS=-15V - 180 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 160 - pF Min. Typ. IS=-1.2A, VGS=0V - - -1.2 V IS=-4A, VGS=0V, - 39 - ns dI/dt=100A/µs - 26 - nC Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage 2 trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions Max. Units Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad. http://www.twtysemi.com [email protected] 4008-318-123 2 of 2