ONSEMI BC636ZL1

BC636, BC636-16, BC638,
BC640, BC640-16
High Current Transistors
PNP Silicon
http://onsemi.com
COLLECTOR
2
MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage
Value
Unit
VCEO
BC636
BC638
BC640
Collector-Base Voltage
VCBO
BC636
BC638
BC640
Emitter-Base Voltage
1
EMITTER
Vdc
–45
–60
–80
VEBO
–5.0
Vdc
Collector Current — Continuous
IC
–0.5
Adc
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD
1
2
1.5
12
Watts
mW/°C
TJ, Tstg
–55 to
+150
°C
Symbol
Max
Unit
Thermal Resistance,
Junction to Ambient
RθJA
200
°C/W
Thermal Resistance,
Junction to Case
RθJC
83.3
°C/W
Operating and Storage Junction
Temperature Range
3
BASE
Vdc
–45
–60
–80
3
CASE 29
TO–92
STYLE 14
THERMAL CHARACTERISTICS
Characteristic
 Semiconductor Components Industries, LLC, 2001
June, 2000 – Rev. 1
ORDERING INFORMATION
1
Device
Package
Shipping
BC636
TO–92
5000 Units/Box
BC636ZL1
TO–92
2000/Ammo Pack
BC636–16ZL1
TO–92
2000/Ammo Pack
BC638
TO–92
5000 Units/Box
BC638ZL1
TO–92
2000/Ammo Pack
BC640
TO–92
5000 Units/Box
BC640ZL1
TO–92
2000/Ammo Pack
BC640–16
TO–92
5000 Units/Box
Publication Order Number:
BC636/D
BC636, BC636–16, BC638, BC640, BC640–16
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
–45
–60
–80
—
—
—
—
—
—
–45
–60
–80
—
—
—
—
—
—
–5.0
—
—
Vdc
—
—
—
—
–100
–10
nAdc
µAdc
25
40
100
40
40
100
25
—
—
—
—
—
—
—
—
250
250
160
160
250
—
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –10 mAdc, IB = 0)
Collector–Base Breakdown Voltage
(IC = –100 µAdc, IE = 0)
V(BR)CEO
BC636
BC638
BC640
Vdc
V(BR)CBO
BC636
BC638
BC640
Emitter–Base Breakdown Voltage
(IE = –10 Adc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = –30 Vdc, IE = 0)
(VCB = –30 Vdc, IE = 0, TA = 125°C)
Vdc
ICBO
ON CHARACTERISTICS (1)
DC Current Gain
(IC = –5.0 mAdc, VCE = –2.0 Vdc)
(IC = –150 mAdc, VCE = –2.0 Vdc)
hFE
BC636
BC636–16
BC638
BC640
BC640–16
(IC = –500 mA, VCE = –2.0 V)
—
Collector–Emitter Saturation Voltage
(IC = –500 mAdc, IB = –50 mAdc)
VCE(sat)
—
—
–0.25
–0.5
–0.5
—
Vdc
Base–Emitter On Voltage
(IC = –500 mAdc, VCE = –2.0 Vdc)
VBE(on)
—
—
–1.0
Vdc
fT
—
150
—
MHz
Output Capacitance
(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
Cob
—
9.0
—
pF
Input Capacitance
(VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz)
Cib
—
110
—
pF
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = –50 mAdc, VCE = –2.0 Vdc, f = 100 MHz)
1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle 2.0%.
http://onsemi.com
2
BC636, BC636–16, BC638, BC640, BC640–16
500
-1000
-200
-100
-50
VCE = -2 V
SOA = 1S
-B
PD TA 25°C
hFE, DC CURRENT GAIN
IC, COLLECTOR CURRENT (mA)
-500
PD TC 25°C
-20
-10
-5
-2
-1
-1
BC636
BC638
BC640
PD TA 25°C
PD TC 25°C
200
-A
50
20
-2 -3 -4 -5 -7 -10
-20 -30-40 -50 -70 -100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
-L
100
-1
-3
-5
-300 -500 -1000
Figure 2. DC Current Gain
500
-1
300
V, VOLTAGE (VOLTS)
-0.8
VCE = -2 V
100
50
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = -2 V
-0.6
-0.4
-0.2
VCE(sat) @ IC/IB = 10
20
-1
-10
-100
IC, COLLECTOR CURRENT (mA)
0
-1000
-100
-10
IC, COLLECTOR CURRENT (mA)
-1
Figure 3. Current Gain Bandwidth Product
Figure 4. “Saturation” and “On” Voltages
-0.2
θV, TEMPERATURE COEFFICIENTS (mV/°C)
f,
T CURRENT-GAIN BANDWIDTH PRODUCT (MHz)
Figure 1. Active Region Safe Operating Area
-10
-30 -50 -100
IC, COLLECTOR CURRENT (mA)
-1.0
VCE = -2 VOLTS
∆T = 0°C to +100°C
-1.6
-2.2
θV for VBE
-1
-3
-5
-10
-30 -50 -100
IC, COLLECTOR CURRENT (mA)
-300 -500 -1000
Figure 5. Temperature Coefficients
http://onsemi.com
3
-1000
BC636, BC636–16, BC638, BC640, BC640–16
PACKAGE DIMENSIONS
TO–92
(TO–226)
CASE 29–11
ISSUE AL
A
B
R
P
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
L
SEATING
PLANE
K
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
D
X X
G
J
H
V
C
SECTION X–X
1
N
N
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
--0.250
--0.080
0.105
--0.100
0.115
--0.135
---
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
--6.35
--2.04
2.66
--2.54
2.93
--3.43
---
STYLE 14:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
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alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
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http://onsemi.com
4
BC636/D