BF 775 NPN Silicon RF Transistor 3 Especially suitable for TV-Sat and UHF tuners 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BF 775 Marking LOs Pin Configuration 1=B 2=E Package SOT-23 3=C Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 15 Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2.5 Collector current IC 30 Base current IB 4 Total power dissipation Ptot 280 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 V mA TS48°C1) Thermal Resistance Parameter Symbol Value Unit Junction - soldering point RthJS 365 K/W 1T S is measured on the collector lead at the soldering point to the pcb 1 Nov-30-2000 BF 775 Electrical Characteristics Parameter Symbol Values Unit min. typ. max. 15 - - V ICES - - 10 µA ICBO - - 100 nA IEBO - - 100 µA hFE 40 100 200 - Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector -base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2.5 V, IC = 0 DC current gain IC = 10 mA, VCE = 8 V 2 Nov-30-2000 BF 775 Electrical Characteristics Parameter Symbol Values Unit min. typ. max. 3.5 5.5 - Ccb - 0.38 0.6 Cce - 0.2 - Ceb - 0.5 - AC Characteristics Transition frequency fT GHz IC = 10 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance pF VCB = 10 V, f = 1 MHz Collector emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure dB F IC = 2 mA, VCE = 6 V, ZS = ZSopt, f = 900 MHz - 1 - f = 1.8 GHz - 1.6 - IC = 10 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt, f = 900 MHz - 16 - f = 1.8 GHz - 10.5 - f = 900 MHz - 13 - f = 1.8 GHz - 7.5 - Power gain, maximum available1) Gma |S21e|2 Transducer gain IC = 10 mA, VCE = 8 V, ZS = ZL = 50, 1G ma = |S21 /S12| (k-(k2 -1)1/2 ) 3 Nov-30-2000