ISC 2SB827

Inchange Semiconductor
Product Specification
2SB827
Silicon PNP Power Transistors
·
DESCRIPTION
・With TO-3PN package
・Complement to type 2SD1063
・Wide area of safe operation
・Low collector-emitter saturation voltage :
VCE(sat)=(–)0.4V max.
APPLICATIONS
・Universal high current switching as solenoid
driving,high speed inverter and converter.
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Tc=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-60
V
VCEO
Collector-emitter voltage
Open base
-50
V
VEBO
Emitter-base voltage
Open collector
-6
V
IC
Collector current (DC)
-7
A
ICP
Collector current (Pulse)
-14
A
PC
Collector power dissipation
60
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SB827
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-1mA ;RBE=∞
-50
V
V(BR)CBO
Collector-base breakdown voltage
IC=-1mA ;IE=0
-60
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-1mA ;IC=0
-6
V
Collector-emitter saturation voltage
IC=-4A; IB=-0.4A
-0.4
V
ICBO
Collector cut-off current
VCB=-40V ;IE=0
-0.1
mA
IEBO
Emitter cut-off current
VEB=-4V; IC=0
-0.1
mA
hFE-1
DC current gain
IC=-1A ; VCE=-2V
70
hFE-2
DC current gain
IC=-5A ; VCE=-2V
30
Transition frequency
IC=-1A ; VCE=-5V
VCEsat
fT
CONDITIONS
MIN
TYP.
MAX
UNIT
280
10
MHz
0.20
μs
0.70
μs
0.10
μs
Switching times
ton
Turn-on time
tstg
Storage time
tf
‹
IC=-2.0A; IB1=-IB2=-0.2A
VCC=-20V;RL=10Ω
Fall time
hFE-1 Classifications
Q
R
S
70-140
100-200
140-280
2
Inchange Semiconductor
Product Specification
2SB827
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions
3
Inchange Semiconductor
Product Specification
2SB827
Silicon PNP Power Transistors
4