SOP8 Plastic-Encapsulate MOSFETS NCE4503

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOP8 Plastic-Encapsulate MOSFETS
NCE4503
N-and P-Channel Enhancement Mode Power MOSFET
SOP8
DESCRIPTION
Advance Power MOSFETs provide the designer with the best
combination of fast switching, ruggedized device desigh, low
on-resistance and cost -effectiveness.
The SOP8 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
z
8
D1
2
7
D1
S2
3
6
D2
G2
4
5
D2
S1
1
G1
MARKING: 4503
Maximum ratings ( Ta=25℃ unless otherwise noted)
Parameter
Symbol
N-Channel
P-Channel
Drain-Source Voltage
VDS
30
-30
Gate-Source Voltage
VGS
±20
±20
6.9
-6.3
5.5
-5
20
-20
Continuous Drain Current a
Ta=25℃
Ta=70℃
Pulsed Drain Current
b
ID
IDM
Unit
V
A
PD
2.0
W
RθJA
62.5
℃/W
Operating Junction Temperature
TJ
150
Storage Temperature
TSTG
-55 ~+150
Power Dissipation
Thermal Resistance from Junction to Ambient
℃
Notes :
a. These tests are performed with infinite heat sink.
b.Pulse width by Max.junction temperature.
B,Mar,2013
Electrical characteristics (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
Static
Drain-source breakdown voltage
Gate-threshold voltage
V(BR)DSS
VGS(th)
Gate-body leakage
IGSS
Zero gate voltage drain current
IDSS
Drain-source on-resistancec
RDS(on)
Forward transconductance
gfs
Diode forward voltagec
VSD
VGS=0, ID =250µA
N-Ch
30
VGS=0, ID =-250µA
P-Ch
-30
VDS =VGS, ID =250µA
N-Ch
1
3
VDS =VGS, ID =-250µA
P-Ch
-1
-3
VDS =0V, VGS =±20V
V
N-Ch
±100
P-Ch
VDS =30V, VGS =0V
N-Ch
1
VDS =-30V, VGS =0V
P-Ch
-1
VGS =10V, ID =6A
N-Ch
0.028
VGS =-10V, ID =-6A
P-Ch
0.036
VGS =4.5V, ID =4A
N-Ch
0.042
VGS =-4.5V, ID =-4A
P-Ch
0.055
VDS =10V, ID =6A
N-Ch
VDS =-10V, ID =-6A
P-Ch
IS=1.7A,VGS=0V
N-Ch
1.2
IS=-1.7A,VGS=0V
P-Ch
-1.2
N-Ch
13.5
N-Channel
P-Ch
20
VDS =24V,VGS =4.5V,ID =6A
N-Ch
1.4
P-Channel
P-Ch
2
VDS =-24V,VGS =-4.5V,ID =-6A
N-Ch
4.7
P-Ch
7
N-Ch
5
N-Channel
P-Ch
8
VDS=20V,RD=20Ω, ID=1A,
N-Ch
8
VGS=10V,RG=3.3Ω
P-Ch
7
P-Channel
N-Ch
18.5
VDS=-15V,RD=15Ω, ID=-1A,
P-Ch
34
VGS=-10V,RG=3.3Ω
N-Ch
9
P-Ch
26
4
V
nA
µA
Ω
S
V
Dynamic
Total gate chargec
Qg
Gate-source charged
Qgs
Gate-drain charged
Qgd
Turn-on delay timec
td(on)
Rise timed
tr
d
Turn-off delay time
Fall timed
td(off)
tf
Input Capacitanced
Ciss
Output Capacitanced
Coss
Reverse Transfer Capacitanced
Crss
nC
ns
N-Ch
770
N-Channel
P-Ch
1380
VDS =25V,VGS =0V,f =1MHz
N-Ch
80
P-Channel
P-Ch
150
VDS =-25V,VGS =0V,f =1MHz
N-Ch
75
P-Ch
140
pF
Notes :
c.
Pulse Test : Pulse width≤300µs, duty cycle ≤2%.
d.
Guaranteed by design, not subject to production testing.
B,Mar,2013
Typical Characteristics
NCE4503-N-Ch
Output Characteristics
Transfer Characteristics
20
10
VGS=10V
7.0V
5.0V
4.5V
Ta=25℃
Pulsed
Ta=25℃
Pulsed
VGS=3.0V
8
VGS=2.5V
5
ID
10
6
DRAIN CURRENT
DRAIN CURRENT
ID
(A)
(A)
15
4
2
VGS=2.0V
0
0
1
2
3
4
DRAIN TO SOURCE VOLTAGE
RDS(ON)
VDS
RDS(ON) ——
(mΩ)
VGS=10V
10
10
DRAIN CURRENT
IS
——
4
(V)
VGS
Ta=25℃
Pulsed
60
20
(A)
40
ID=6.0A
20
0
0
4
8
12
GATE TO SOURCE VOLTAGE
16
VGS
20
(V)
VSD
Ta=25℃
Pulsed
1
SOURCE CURRENT
IS
(A)
10
15
ID
3
VGS
RDS(ON)
VGS=4.5V
ON-RESISTANCE
ON-RESISTANCE
RDS(ON)
(mΩ)
20
5
2
80
Ta=25℃
Pulsed
0
1
GATE TO SOURCE VOLTAGE
ID
——
15
0
(V)
25
5
0
5
0.1
0.01
0.2
0.4
0.6
0.8
SOURCE TO DRAIN VOLTAGE
1.0
VSD
1.2
(V)
B,Mar,2013
Typical Characteristics
NCE4503-P-Ch
Output Characteristics
-20
Ta=25℃
Pulsed
Transfer Characteristics
-10
VGS=-10V、-7.0V、-5.0V、-4.5V
-8
VGS=-3.0V
-5
ID
-10
-6
DRAIN CURRENT
DRAIN CURRENT
ID
(A)
(A)
-15
Ta=25℃
Pulsed
-4
-2
VGS=-2.5V
-0
-0
-1
-2
-3
DRAIN TO SOURCE VOLTAGE
RDS(ON)
-4
VDS
-0
-5
-0
(V)
-1
ID
——
-2
RDS(ON) ——
40
-3
GATE TO SOURCE VOLTAGE
VGS
-4
(V)
VGS
80
Ta=25℃
Pulsed
Ta=25℃
Pulsed
VGS=-4.5V
RDS(ON)
25
ON-RESISTANCE
ON-RESISTANCE
(mΩ)
30
VGS=-10V
20
60
RDS(ON)
(mΩ)
35
40
ID=-6.0A
20
15
10
-0
-5
-10
DRAIN CURRENT
IS
——
ID
-20
(A)
0
-0
-4
-8
-12
GATE TO SOURCE VOLTAGE
-16
VGS
-20
(V)
VSD
Ta=25℃
Pulsed
-1
SOURCE CURRENT
IS
(A)
-10
-15
-0.1
-0.01
-0.2
-0.4
-0.6
-0.8
SOURCE TO DRAIN VOLTAGE
-1.0
VSD
-1.2
(V)
B,Mar,2013