Datasheet

PD-94018A
IRF7807V
•
•
•
•
•
HEXFET® Power MOSFET
N Channel Application Specific MOSFET
Ideal for Mobile DC-DC Converters
Low Conduction Losses
Low Switching Losses
100% RG Tested
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The
reduction of conduction and switching losses makes
it ideal for high efficiency DC-DC Converters that
power the latest generation of mobile microprocessors.
A
D
1
8
S
2
7
D
S
3
6
D
G
4
5
D
S
SO-8
T o p V ie w
DEVICE CHARACTERISTICS…
A pair of IRF7807V devices provides the best cost/
performance solution for system voltages, such as
3.3V and 5V.
IRF7807V
17 mΩ
RDS(on)
QG
QSW
9.5 nC
3.4 nC
12 nC
QOSS
Absolute Maximum Ratings
Symbol
IRF7807V
Drain-Source Voltage
Parameter
VDS
30
Gate-Source Voltage
VGS
±20
Continuous Drain or Source
TA = 25°C
(VGS ≥ 4.5V)
TA = 70°C
c
Power Dissipation e
TA = 25°C
TA = 70°C
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
Pulsed Source Current
c
V
8.3
ID
A
6.6
66
IDM
Pulsed Drain Current
Units
2.5
PD
TJ , TSTG
1.6
-55 to 150
IS
2.5
ISM
66
W
°C
A
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
h
eh
Symbol
Typ
Max
RθJA
–––
50
RθJL
–––
20
Units
°C/W
11/12/03
IRF7807V
Electrical Characteristics
Parameter
Drain-Source Breakdown Voltage
Symbol
BVDSS
Min Typ Max Units
30
–––
–––
V
Conditions
VGS = 0V, ID = 250µA
d
Static Drain-Source On-Resistance
RDS(on)
–––
17
25
mΩ
VGS = 4.5V, ID = 7.0A
Gate Threshold Voltage
VGS(th)
1.0
–––
3.0
V
VDS = VGS, ID = 250µA
–––
–––
100
–––
–––
20
–––
–––
100
IGSS
–––
––– ±100
Drain-Source Leakage Current
Gate-Source Leakage Current*
IDSS
QG
–––
9.5
14
Pre-Vth Gate-Source Charge
QGS1
–––
2.3
–––
Post-Vth Gate-Source Charge
QGS2
–––
1.0
–––
Gate-to-Drain Charge
QGD
–––
2.4
–––
Switch Charge (Qgs2 + Qgd)
QSW
–––
3.4
5.2
Output Charge*
QOSS
–––
12
16.8
Total Gate Charge*
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
VDS = 30V, VGS = 0
µA
VDS = 24V, VGS = 0
VDS = 24V, VGS = 0, TJ = 100°C
nA
VGS = ± 20V
VGS = 5V, ID = 7.0A
VDS = 16V
nC
VDS = 16V, VGS = 0
Ω
RG
0.9
–––
2.8
td(on)
–––
6.3
–––
VDD = 16V
tr
–––
1.2
–––
ID = 7A
td(off)
–––
11
–––
tf
–––
2.2
–––
ns
VGS = 5V, RG = 2Ω
Resistive Load
Source-Drain Ratings and Characteristics
Parameter
Diode Forward Voltage*
Reverse Recovery Charge
f
Symbol
VSD
Qrr
Min Typ Max Units
–––
–––
1.2
–––
64
–––
41
–––
V
nC
Reverse Recovery Charge
(with Parallel Schottsky)
f
Notes:

‚
ƒ
„
…
†
*
2
Qrr(s)
–––
Conditions
IS = 7.0A
d ,V
GS
= 0V
di/dt = 700A/µs
VDS = 16V, VGS = 0V, IS = 7.0A
di/dt = 700A/µs , (with 10BQ040)
VDS = 16V, VGS = 0V, IS = 7.0A
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400 µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board
Typ = measured - Q oss
Typical values of RDS(on) measured at VGS = 4.5V, QG, QSW and QOSS
measured at V GS = 5.0V, IF = 7.0A.
Rθ is measured at TJ approximately 90°C
Device are 100% tested to these parameters.
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IRF7807V
Power MOSFET Selection for DC/DC
Converters
4
Drain Current
Control FET
t2
t3
t1
VGTH
t0
2
QGD
Ploss = Pconduction+ Pswitching+ Pdrive+ Poutput
Gate Voltage
QGS2
Power losses in the control switch Q1 are given
by;
1
QGS1
Special attention has been given to the power losses
in the switching elements of the circuit - Q1 and Q2.
Power losses in the high side switch Q1, also called
the Control FET, are impacted by the Rds(on) of the
MOSFET, but these conduction losses are only about
one half of the total losses.
Drain Voltage
This can be expanded and approximated by;
Ploss = (Irms 2 × Rds(on ) )

Qgs 2
Qgd
 

+I ×
× Vin × f  +  I ×
× Vin × f 
ig
ig

 

+ (Qg × Vg × f )
+
 Qoss
× Vin × f 
 2

This simplified loss equation includes the terms Qgs2
and Qoss which are new to Power MOSFET data sheets.
Qgs2 is a sub element of traditional gate-source
charge that is included in all MOSFET data sheets.
The importance of splitting this gate-source charge
into two sub elements, Qgs1 and Qgs2, can be seen from
Fig 1.
Qgs2 indicates the charge that must be supplied by
the gate driver between the time that the threshold
voltage has been reached (t1) and the time the drain
current rises to Idmax (t2) at which time the drain voltage begins to change. Minimizing Qgs2 is a critical factor in reducing switching losses in Q1.
Qoss is the charge that must be supplied to the output capacitance of the MOSFET during every switching cycle. Figure 2 shows how Qoss is formed by the
parallel combination of the voltage dependant (nonlinear) capacitance’s Cds and Cdg when multiplied by
the power supply input buss voltage.
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Figure 1: Typical MOSFET switching waveform
Synchronous FET
The power loss equation for Q2 is approximated
by;
*
Ploss = Pconduction + Pdrive + Poutput
(
2
Ploss = Irms × Rds(on)
)
+ (Qg × Vg × f )
Q

+  oss × Vin × f + (Qrr × Vin × f )
 2

*dissipated primarily in Q1.
3
IRF7807V
For the synchronous MOSFET Q2, Rds(on) is an important characteristic; however, once again the importance of gate charge must not be overlooked since
it impacts three critical areas. Under light load the
MOSFET must still be turned on and off by the control IC so the gate drive losses become much more
significant. Secondly, the output charge Qoss and reverse recovery charge Qrr both generate losses that
are transfered to Q1 and increase the dissipation in
that device. Thirdly, gate charge will impact the
MOSFETs’ susceptibility to Cdv/dt turn on.
The drain of Q2 is connected to the switching node
of the converter and therefore sees transitions between ground and Vin. As Q1 turns on and off there is
a rate of change of drain voltage dV/dt which is capacitively coupled to the gate of Q2 and can induce
a voltage spike on the gate that is sufficient to turn
the MOSFET on, resulting in shoot-through current .
The ratio of Qgd/Qgs1 must be minimized to reduce the
potential for Cdv/dt turn on.
Spice model for IRF7807V can be downloaded in
machine readable format at www.irf.com.
Figure 2: Qoss Characteristic
Typical Mobile PC Application
The performance of these new devices has been tested
in circuit and correlates well with performance predictions generated by the system models. An advantage of
this new technology platform is that the MOSFETs it
produces are suitable for both control FET and synchronous FET applications. This has been demonstrated with
the 3.3V and 5V converters. (Fig 3 and Fig 4). In these
applications the same MOSFET IRF7807V was used for
both the control FET (Q1) and the synchronous FET
(Q2). This provides a highly effective cost/performance
solution.
5.0V Supply : Q1=Q2= IRF7807V
93
95
92
94
91
93
90
92
Efficiency (%)
Efficiency (%)
3.3V Supply : Q1=Q2= IRF7807V
89
88
87
86
Vin=24V
85
Vin=14V
84
Vin=10V
90
Vin=24V
89
Vin=14V
88
Vin=10V
87
86
83
1
2
3
Load current (A)
Figure 3
4
91
4
5
1
2
3
4
5
Load current (A)
Figure 4
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IRF7807V
5
ID = 7.0A
1.5
1.0
0.5
0.0
-60 -40 -20
ID = 7.0A
VDS = 16V
VGS , Gate-to-Source Voltage (V)
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.0
4
3
2
1
VGS = 4.5V
0
20
40
60
0
80 100 120 140 160
0
TJ , Junction Temperature ( °C)
4
6
8
10
12
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Normalized On-Resistance
Vs. Temperature
100
0.030
ISD , Reverse Drain Current (A)
RDS(on) , Drain-to -Source On Resistance (Ω)
2
0.025
0.020
ID = 7.0A
0.015
0.010
2.0
4.0
6.0
8.0
10.0
12.0
14.0
VGS, Gate -to -Source Voltage (V)
Fig 7. On-Resistance Vs. Gate Voltage
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16.0
TJ = 150 ° C
10
TJ = 25 ° C
1
0.1
0.2
V GS = 0 V
0.4
0.6
0.8
1.0
1.2
VSD ,Source-to-Drain Voltage (V)
Fig 8. Typical Source-Drain Diode
Forward Voltage
5
IRF7807V
Thermal Response (Z thJA )
100
D = 0.50
10
0.20
0.10
0.05
PDM
0.02
1
t1
0.01
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Figure 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
6
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IRF7807V
SO-8 Package Details
DIM
D
-B-
5
8
E
-A-
1
7
2
3
e
6X
5
H
0.25 (.010)
4
M
A M
θ
e1
K x 45°
θ
A
-C-
0.10 (.004)
B 8X
0.25 (.010)
A1
L
8X
6
C
8X
M C A S B S
MILLIMETERS
MAX
MIN
MAX
A
.0532
.0688
1.35
1.75
A1
.0040
.0098
0.10
0.25
B
.014
.018
0.36
0.46
C
.0075
.0098
0.19
0.25
D
.189
.196
4.80
4.98
E
.150
.157
3.81
3.99
5
6
INCHES
MIN
e
.050 BASIC
1.27 BASIC
e1
.025 BASIC
0.635 BASIC
H
.2284
.2440
K
.011
.019
0.28
5.80
0.48
6.20
L
0.16
.050
0.41
1.27
θ
0°
8°
0°
8°
RECOMMENDED FOOTPRINT
NOTES:
1.
2.
3.
4.
DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
CONTROLLING DIMENSION : INCH.
DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS
MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006).
6 DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE..
0.72 (.028 )
8X
6.46 ( .255 )
1.78 (.070)
8X
1.27 ( .050 )
3X
SO-8 Part Marking
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7
IRF7807V
SO-8 Tape and Reel
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 11/03
8
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