MCMA700PD1600CB Thyristor \ Diode Module VRRM = 2x 1600 V I TAV = 700 A VT = 1.16 V Phase leg Part number MCMA700PD1600CB Backside: isolated 3 1 5 4 2 Features / Advantages: Applications: Package: ComPack ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability ● Direct Copper Bonded Al2O3-ceramic ● Line rectifying 50/60 Hz ● Softstart AC motor control ● DC Motor control ● Power converter ● AC power control ● Lighting and temperature control ● Isolation Voltage: 4800 V~ ● Industry standard outline ● RoHS compliant ● Base plate: Copper internally DCB isolated ● Advanced power cycling IXYS reserves the right to change limits, conditions and dimensions. © 2014 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20141127a MCMA700PD1600CB Ratings Rectifier Conditions Symbol V RSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25°C max. 1700 Unit V V RRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25°C 1600 V I R/D reverse current, drain current VT forward voltage drop min. typ. VR/D = 1600 V TVJ = 25°C 2 mA VR/D = 1600 V TVJ = 125°C 40 mA I T = 700 A TVJ = 25°C 1.20 V 1.45 V 1.16 V I T = 1400 A TVJ = 125 °C I T = 700 A I T = 1400 A I TAV average forward current VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case TC = 85°C 1.46 V T VJ = 140 °C 700 A TVJ = 140 °C 0.82 V 180° sine for power loss calculation only R thCH thermal resistance case to heatsink Ptot total power dissipation I TSM max. forward surge current I²t value for fusing 0.02 W t = 10 ms; (50 Hz), sine TVJ = 45°C 19.0 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 20.5 kA t = 10 ms; (50 Hz), sine TVJ = 140 °C 16.2 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 17.4 kA t = 10 ms; (50 Hz), sine TVJ = 45°C 1.81 MA²s t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 1.75 MA²s TVJ = 140 °C 1.30 MA²s t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V f = 1 MHz TVJ = 25°C PGM max. gate power dissipation t P = 30 µs T C = 140 °C 1.27 MA²s 876 t P = 300 µs average gate power dissipation critical rate of rise of current K/W 2300 junction capacitance (di/dt) cr mΩ K/W TC = 25°C CJ PGAV 0.4 0.05 TVJ = 140°C; f = 50 Hz t P = 200 µs; di G /dt = IG = repetitive, IT =2100 A pF 240 W 120 W 40 W 100 A/µs 1 A/µs; 1 A; VD = ⅔ VDRM non-repet., IT = 700 A 500 A/µs (dv/dt) cr critical rate of rise of voltage TVJ = 140°C VGT gate trigger voltage VD = 6 V TVJ = 25 °C TVJ = -40 °C 3 V I GT gate trigger current VD = 6 V TVJ = 25 °C 300 mA TVJ = -40 °C 400 mA TVJ = 140 °C 0.25 V 10 mA TVJ = 25 °C 400 mA VD = ⅔ VDRM 1000 V/µs R GK = ∞; method 1 (linear voltage rise) VGD gate non-trigger voltage I GD gate non-trigger current IL latching current VD = ⅔ VDRM t p = 30 µs IG = 1 A; di G /dt = 2 V 1 A/µs IH holding current VD = 6 V R GK = ∞ TVJ = 25 °C 300 mA t gd gate controlled delay time VD = ½ VDRM TVJ = 25 °C 2 µs tq turn-off time IG = 1 A; di G /dt = di/dt = 10 A/µs; dv/dt = IXYS reserves the right to change limits, conditions and dimensions. © 2014 IXYS all rights reserved 1 A/µs VR = 100 V; I T = 700 A; VD = ⅔ VDRM TVJ = 140 °C 350 µs 50 V/µs; t p = 200 µs Data according to IEC 60747and per semiconductor unless otherwise specified 20141127a MCMA700PD1600CB Package Ratings ComPack Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature max. 1200 Unit A -40 140 °C -40 125 °C Tstg storage temperature -40 125 °C Weight 500 MD mounting torque MT terminal torque d Spp/App d Spb/Apb VISOL typ. terminal to terminal creepage distance on surface | striking distance through air terminal to backside t = 1 second isolation voltage t = 1 minute 50/60 Hz, RMS; IISOL ≤ 1 mA g 3 5 Nm 12 14 Nm 21.0 mm 18.0 mm 4800 V 4000 V Part description Circuit Diagram Assembly Line Date Code Part No. yywwA YYYYYYYYYYY Ordering Standard 2D Matrix Ordering Number MCMA700PD1600CB Equivalent Circuits for Simulation I V0 M C M A 700 PD 1600 CB R0 = = = = = = = = Marking on Product MCMA700PD1600CB * on die level Module Thyristor (SCR) Thyristor (up to 1800V) Current Rating [A] Phase leg Reverse Voltage [V] ComPack Delivery Mode Box Code No. 513842 T VJ = 140 °C Thyristor V 0 max threshold voltage 0.82 V R 0 max slope resistance * 0.21 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2014 IXYS all rights reserved Quantity 2 Data according to IEC 60747and per semiconductor unless otherwise specified 20141127a MCMA700PD1600CB Outlines ComPack 0,5 37,5 + - 0,0 label 0,2 3,0 + - 0,0 0,8 2,8 27,25 ±0,3 21 ± 1,0 0,7 48,0 -+0,0 A(2:1) 50,5 ± 1,0 66,0 -+0,0 0,7 baseplate typ. 100 μm convex over 62,5 mm before mounting 0,5 92,0 + - 0,3 107±0,5 48,0 65,0 ± 0,5 30,0 ± 0,5 23,0 0,5 30,0 -+0,0 61,0 baseplate typ. 100 μm convex over 54,5 mm before mounting 5,0 ± 0,2 21,2 A 45,0 39,5 ± 0,5 6,0 M10x16 (3x) 6,1 Ø 25,85±0,30 5,5 18,0 80,0 93,5 3 IXYS reserves the right to change limits, conditions and dimensions. © 2014 IXYS all rights reserved 1 5 4 2 Data according to IEC 60747and per semiconductor unless otherwise specified 20141127a MCMA700PD1600CB Thyristor 1400 107 16000 VR = 0 V 50 Hz, 80% VRRM 1200 14000 1000 IT 12000 800 [A] 600 2 [A s] [A] 140°C TVJ = 45°C 106 10000 TVJ = 125°C 400 2 It TVJ = 45°C ITSM TVJ = 140°C TVJ = 140°C 8000 200 TVJ = 25°C 0 0.4 105 6000 0.6 0.8 1.0 1.2 1.4 1.6 0.01 0.1 VT [V] 1 Fig. 3 I t versus time (1-10 s) 1400 1200 TVJ = 125°C 10.0 VG [V] 800 ITAVM 600 lim. [μs] 1 dc = 1 0.5 0.4 0.33 0.17 0.08 1000 tgd [A] 1.0 typ. 400 IGT (TVJ = -40°C) IGT (TVJ = 25°C) IGD (TVJ = 140°C) 1 4 5 6 7 8 910 t [ms] 100.0 10 0.1 3 2 Fig. 2 Surge overload current ITSM: crest value, t: duration PGM = 240 W; tp = 30 µs 120 W; tp = 300 µs PGAV = 40 W 0.1 0.01 2 t [s] Fig. 1 Forward characteristics 100 1 200 0.1 0.01 10 0 0.10 1.00 10.00 0 40 IG [A] IG [A] Fig. 5 Gate controlled delay time tgd Fig. 4 Gate voltage & gate current 80 120 160 Tcase [°C] Fig. 6 Max. forward current at case temperature 0.06 dc = 1 0.5 0.4 0.33 0.17 0.08 1000 800 Ptot 600 [W] i Rthi (K/W) 1 0.0020 2 0.0080 3 0.0130 4 0.0370 0.05 RthHA 0.05 0.10 0.20 0.30 0.40 0.50 0.04 ZthJC ti (s) 0.0150 0.0800 0.2200 0.3800 0.03 [K/W] 400 0.02 200 0.01 0.00 0 0 200 400 600 800 IT(AV) [A] 0 40 80 120 160 Fig. 7a Power dissipation versus direct output current Fig. 7b and ambient temperature IXYS reserves the right to change limits, conditions and dimensions. © 2014 IXYS all rights reserved 1 10 100 1000 10000 t [ms] Tamb [°C] Fig. 8 Transient thermal impedance junction to case Data according to IEC 60747and per semiconductor unless otherwise specified 20141127a