SUM2153 0.81A , 20V , RDS(ON) 310 mΩ Ω N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION SOT-363 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. A E L MECHANICAL DATA B Trench Technology Supper high density cell design Excellent ON resistance Extremely Low Threshold Voltage F REF. DC-DC converter circuit Load Switch A B C D E F MARKING H J K DG APPLICATION C Millimeter Min. Max. 1.80 2.20 1.80 2.45 1.15 1.35 0.80 1.10 1.10 1.50 0.10 0.35 REF. G H J K L Millimeter Min. Max. 0.100 REF. 0.525 REF. 0.08 0.25 8° 0.650 TYP. 53 PACKAGE INFORMATION Package MPQ SOT-363 3K Leader Size 7 inch MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating 10S Steady State Unit Drain – Source Voltage VDS 20 V Gate – Source Voltage VGS ±6 V Continuous Drain Current Power Dissipation TA= 25°C TA= 70°C TA= 25°C 1 TA= 70°C Continuous Drain Current Power Dissipation 1 TA= 25°C TA= 70°C TA= 25°C 2 Pulsed Drain Current 2 TA= 70°C 3 Lead Temperature Operating Junction & Storage Temperature Range http://www.SeCoSGmbH.com/ 11-Jan-2013 Rev. A ID PD ID PD IDM 0.89 0.81 0.71 0.64 0.38 0.31 0.24 0.2 0.76 0.69 0.61 0.55 0.28 0.23 0.17 0.15 A W A W 1.4 A TL 260 °C TJ, TSTG 150, -55~150 °C Any changes of specification will not be informed individually. Page 1 of 4 SUM2153 0.81A , 20V , RDS(ON) 310 mΩ Ω N-Channel Enhancement Mode MOSFET Elektronische Bauelemente THERMAL RESISTANCE RATINGS Parameter Rating Symbol Unit Typ. Max. 276 328 375 446 260 325 395 445 532 300 °C / W 310 366 415 498 265 360 432 486 575 305 °C / W Single Operation Junction-to-Ambient Thermal Resistance 1 Junction-to-Ambient Thermal Resistance 2 Junction-to-Case Thermal Resistance T≦10S Steady State T≦10S Steady State Steady State RθJA RθJA RθJC Dual Operation Junction-to-Ambient Thermal Resistance 1 Junction-to-Ambient Thermal Resistance 2 Junction-to-Case Thermal Resistance T≦10S Steady State T≦10S Steady State Steady State RθJA RθJA RθJC Note: 1. Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper. 2. Surface mounted on FR4 board using minimum pad size, 1oz copper 3. Repetitive rating, pulse width limited by junction temperature, tp=10µs, Duty Cycle=1% 4. Repetitive rating, pulse width limited by junction temperature TJ=150°C. ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions - V VGS=0, ID=250µA Static Drain-Source Breakdown Voltage V(BR)DSS 20 - Zero Gate Voltage Drain Current IDSS - - 1 µA VDS=16V, VGS=0 Gate-Source Leakage IGSS - - ±5 µA VDS=0 , VGS= ±5V Gate-Threshold Voltage VGS(TH) 0.45 0.58 0.85 V VDS=VGS, ID=250µA - 220 310 Drain-Source On Resistance RDS(ON) - 260 360 - 320 460 - 2 - S VDS=5V, ID= 0.55A 1.5 V IS=350mA, VGS=0 pF VDS=10V, VGS=0, f=100KHz nC VDS=10V, VGS=4.5V, ID=0.55A nS VDD=10V, I D=0.55A, VGS=4.5V, RG=6Ω. Forward Transconductance gFS VGS=4.5V, ID=0.55A mΩ VGS=2.5V, ID=0.45A VGS=1.8V, ID=0.35A Body-Drain Diode Ratings Diode Forward On–Voltage VSD 0.5 0.7 Dynamic Characteristics Input Capacitance CISS - 50 - Output Capacitance COSS - 13 - Reverse Transfer Capacitance CRSS - 8 - Total Gate Charge QG(TOT) - 1.15 - Threshold Gate Charge QG(TH) - 0.06 - Gate-to-Source Charge QGS - 0.15 - Gate-to-Drain Charge QGD - 0.23 - Td(ON) - 22 - Tr - 80 - Td(OFF) - 700 - Tf - 380 - Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time http://www.SeCoSGmbH.com/ 11-Jan-2013 Rev. A Any changes of specification will not be informed individually. Page 2 of 4 SUM2153 Elektronische Bauelemente 0.81A , 20V , RDS(ON) 310 mΩ Ω N-Channel Enhancement Mode MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 11-Jan-2013 Rev. A Any changes of specification will not be informed individually. Page 3 of 4 SUM2153 Elektronische Bauelemente 0.81A , 20V , RDS(ON) 310 mΩ Ω N-Channel Enhancement Mode MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 11-Jan-2013 Rev. A Any changes of specification will not be informed individually. Page 4 of 4