SUM2153

SUM2153
0.81A , 20V , RDS(ON) 310 mΩ
Ω
N-Channel Enhancement Mode MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
SOT-363
These miniature surface mount MOSFETs utilize a high
cell density trench process to provide low RDS(on) and to
ensure minimal power loss and heat dissipation.
A
E
L
MECHANICAL DATA
B
Trench Technology
Supper high density cell design
Excellent ON resistance
Extremely Low Threshold Voltage
F
REF.
DC-DC converter circuit
Load Switch
A
B
C
D
E
F
MARKING
H
J
K
DG
APPLICATION
C
Millimeter
Min.
Max.
1.80
2.20
1.80
2.45
1.15
1.35
0.80
1.10
1.10
1.50
0.10
0.35
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.100 REF.
0.525 REF.
0.08
0.25
8°
0.650 TYP.
53
PACKAGE INFORMATION
Package
MPQ
SOT-363
3K
Leader Size
7 inch
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Rating
10S
Steady State
Unit
Drain – Source Voltage
VDS
20
V
Gate – Source Voltage
VGS
±6
V
Continuous Drain Current
Power Dissipation
TA= 25°C
TA= 70°C
TA= 25°C
1
TA= 70°C
Continuous Drain Current
Power Dissipation
1
TA= 25°C
TA= 70°C
TA= 25°C
2
Pulsed Drain Current
2
TA= 70°C
3
Lead Temperature
Operating Junction & Storage Temperature Range
http://www.SeCoSGmbH.com/
11-Jan-2013 Rev. A
ID
PD
ID
PD
IDM
0.89
0.81
0.71
0.64
0.38
0.31
0.24
0.2
0.76
0.69
0.61
0.55
0.28
0.23
0.17
0.15
A
W
A
W
1.4
A
TL
260
°C
TJ, TSTG
150, -55~150
°C
Any changes of specification will not be informed individually.
Page 1 of 4
SUM2153
0.81A , 20V , RDS(ON) 310 mΩ
Ω
N-Channel Enhancement Mode MOSFET
Elektronische Bauelemente
THERMAL RESISTANCE RATINGS
Parameter
Rating
Symbol
Unit
Typ.
Max.
276
328
375
446
260
325
395
445
532
300
°C / W
310
366
415
498
265
360
432
486
575
305
°C / W
Single Operation
Junction-to-Ambient Thermal Resistance
1
Junction-to-Ambient Thermal Resistance
2
Junction-to-Case Thermal Resistance
T≦10S
Steady State
T≦10S
Steady State
Steady State
RθJA
RθJA
RθJC
Dual Operation
Junction-to-Ambient Thermal Resistance
1
Junction-to-Ambient Thermal Resistance
2
Junction-to-Case Thermal Resistance
T≦10S
Steady State
T≦10S
Steady State
Steady State
RθJA
RθJA
RθJC
Note:
1. Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper.
2. Surface mounted on FR4 board using minimum pad size, 1oz copper
3. Repetitive rating, pulse width limited by junction temperature, tp=10µs, Duty Cycle=1%
4. Repetitive rating, pulse width limited by junction temperature TJ=150°C.
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Teat Conditions
-
V
VGS=0, ID=250µA
Static
Drain-Source Breakdown Voltage
V(BR)DSS
20
-
Zero Gate Voltage Drain Current
IDSS
-
-
1
µA
VDS=16V, VGS=0
Gate-Source Leakage
IGSS
-
-
±5
µA
VDS=0 , VGS= ±5V
Gate-Threshold Voltage
VGS(TH)
0.45
0.58
0.85
V
VDS=VGS, ID=250µA
-
220
310
Drain-Source On Resistance
RDS(ON)
-
260
360
-
320
460
-
2
-
S
VDS=5V, ID= 0.55A
1.5
V
IS=350mA, VGS=0
pF
VDS=10V,
VGS=0,
f=100KHz
nC
VDS=10V,
VGS=4.5V,
ID=0.55A
nS
VDD=10V,
I D=0.55A,
VGS=4.5V,
RG=6Ω.
Forward Transconductance
gFS
VGS=4.5V, ID=0.55A
mΩ
VGS=2.5V, ID=0.45A
VGS=1.8V, ID=0.35A
Body-Drain Diode Ratings
Diode Forward On–Voltage
VSD
0.5
0.7
Dynamic Characteristics
Input Capacitance
CISS
-
50
-
Output Capacitance
COSS
-
13
-
Reverse Transfer Capacitance
CRSS
-
8
-
Total Gate Charge
QG(TOT)
-
1.15
-
Threshold Gate Charge
QG(TH)
-
0.06
-
Gate-to-Source Charge
QGS
-
0.15
-
Gate-to-Drain Charge
QGD
-
0.23
-
Td(ON)
-
22
-
Tr
-
80
-
Td(OFF)
-
700
-
Tf
-
380
-
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
http://www.SeCoSGmbH.com/
11-Jan-2013 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 4
SUM2153
Elektronische Bauelemente
0.81A , 20V , RDS(ON) 310 mΩ
Ω
N-Channel Enhancement Mode MOSFET
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
11-Jan-2013 Rev. A
Any changes of specification will not be informed individually.
Page 3 of 4
SUM2153
Elektronische Bauelemente
0.81A , 20V , RDS(ON) 310 mΩ
Ω
N-Channel Enhancement Mode MOSFET
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
11-Jan-2013 Rev. A
Any changes of specification will not be informed individually.
Page 4 of 4