QRE1113, QRE1113GR Miniature Reflective Object Sensor Features • • • • • Two Leadform Options: Through Hole (QRE1113) SMT Gull Wing (QRE1113GR) • Two Packaging Options: Tube (QRE1113) Tape and Reel (QRE1113GR) Phototransistor Output No Contact Surface Sensing Miniature Package Lead Form Style: Gull Wing QRE1113GR Package Dimensions(1, 2) 2.90 2.50 0.60 0.40 1.00 3 4 0.94 CL 3.60 3.20 1.80 CL 0.94 1 2 30° 0.40 1.70 0.120 1.50 1.10 0.90 4.80 4.40 Notes: 1. Dimensions for all drawings are in millimeters. 2. Tolerance of ±0.15 mm on all non-nominal dimensions. © 2002 Fairchild Semiconductor Corporation QRE1113, QRE1113GR Rev. 2.6 www.fairchildsemi.com QRE1113, QRE1113GR — Miniature Reflective Object Sensor July 2015 QRE1113, QRE1113GR — Miniature Reflective Object Sensor QRE1113 Package Dimensions(3, 4) 2.90 2.50 0.60 0.40 1.00 4 3 0.94 CL 3.60 3.20 1.80 CL 0.94 1 2 4.20 3.80 0.40 1.70 1.50 10.4 8.4 0~20° 0~20° Notes: 3. Dimensions for all drawings are in millimeters. 4. Tolerance of ±0.15 mm on all non-nominal dimensions. Schematic 1 2 3 Pin 1: Anode Pin 2: Cathode © 2002 Fairchild Semiconductor Corporation QRE1113, QRE1113GR Rev. 2.6 4 Pin 3: Collector Pin 4: Emitter www.fairchildsemi.com 2 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit TOPR Operating Temperature -40 to +85 °C TSTG Storage Temperature -40 to +90 °C (6, 7, 8) 240 for 5 sec °C (7, 8) 260 for 10 sec °C 50 mA TSOL-I TSOL-F Soldering Temperature (Iron) Soldering Temperature (Flow) EMITTER IF Continuous Forward Current VR Reverse Voltage 5 V IFP Peak Forward Current(9) 1 A PD Power Dissipation(5) 75 mW VCEO Collector-Emitter Voltage 30 V VECO Emitter-Collector Voltage 5 V IC Collector Current 20 mA PD Power Dissipation(5) 50 mW SENSOR Electrical / Optical Characteristics Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Typ. Max. Unit 1.2 1.6 V 10 μA INPUT DIODE VF Forward Voltage IF = 20 mA lR Reverse Leakage Current VR = 5 V Peak Emission Wavelength IF = 20 mA λPE 940 nm OUTPUT TRANSISTOR lD Collector-Emitter Dark Current IF = 0 mA, VCE = 20 V On-State Collector Current IF = 20 mA, VCE = 5 V(10) Cross-Talk Collector Current IF = 20 mA, VCE = 5 V(11) 100 nA COUPLED lC(ON) ICX VCE(SAT) 0.10 0.40 Saturation Voltage tr Rise Time tf Fall Time VCC = 5 V, lC(ON) = 100 μA, RL = 100 kΩ mA 1 μA 0.3 V 20 μs 20 μs Notes: 5. Derate power dissipation linearly 1.00 mW/°C above 25°C. 6. RMA flux is recommended. 7. Methanol or isopropyl alcohols are recommended as cleaning agents. 8. Soldering iron 1/16" (1.6mm) from housing. 9. Pulse conditions: tp = 100 μs; T = 10 ms. 10. Measured using an aluminum alloy mirror at d = 1 mm. 11. No reflective surface at close proximity. © 2002 Fairchild Semiconductor Corporation QRE1113, QRE1113GR Rev. 2.6 www.fairchildsemi.com 3 QRE1113, QRE1113GR — Miniature Reflective Object Sensor Absolute Maximum Ratings 1.0 IF = 10 mA VCE = 5 V TA = 25˚C 0.8 IC (ON) - COLLECTOR CURRENT (mA) IC (ON)- NORMALIZED COLLECTOR CURRENT 1.0 d 0 0.6 0.4 Sensing Object: White Paper (90% reflective) 0.2 Mirror 0.0 0 1 2 3 4 0.8 0.6 0.4 0.2 0.0 5 0 d-DISTANCE (mm) ICEO - NORMALIZED DARK CURRENT IC (ON) - NORMALIZED COLLECTOR CURRENT d = 1 mm, 90% reflection TA = 25˚C 1.6 IF = 25mA 1.2 IF =20mA 1.0 0.8 IF =15mA 0.6 IF =10mA 0.4 IF =5mA 0.2 0.0 0.1 1 16 20 102 Normalized to: VCE = 10 V TA = 25˚C VCE = 10 V VCE = 5 V 101 100 10-1 10-2 25 10 40 55 70 85 TA - Ambient Temperature (˚C) VCE - COLLECTOR EMITTER VOLTAGE (V) Fig. 3 Normalized Collector Current vs. Collector to Emitter Voltage © 2002 Fairchild Semiconductor Corporation QRE1113, QRE1113GR Rev. 2.6 12 Fig. 2 Collector Current vs. Forward Current 2.0 1.4 8 IF - FORWARD CURRENT (mA) Fig. 1 Normalized Collector Current vs. Distance between device and reflector 1.8 4 Fig. 4 Collector Emitter Dark Current (Normalized) vs. Ambient Temperature www.fairchildsemi.com 4 QRE1113, QRE1113GR — Miniature Reflective Object Sensor Typical Performance Curves 100 VCC = 10 V tpw = 100 us T=1ms TA = 25˚C TA = 25˚C 40 RISE AND FALL TIME (us) IF - FORWARD CURRENT (mA) 50 30 20 10 0 1.0 1.1 1.2 1.3 1.4 tf IC = 0.3 mA tr 10 tf tr IC = 1 mA 1 0.1 1.5 1 VF - FORWARD VOLTAGE (V) 10 RL - LOAD RESISTANCE (KΩ) Fig. 7 Rise and Fall Time vs. Load Resistance Fig. 6 Forward Current vs. Forward Voltage 2.5 RELATIVE RADIANT INTENSITY VF - FORWARD VOLTAGE (V) 3.0 2.0 IF = 50 mA 1.5 IF = 20 mA IF = 10 mA 1.0 0.5 0.0 -40 -20 0 20 40 60 0.9 0.8 0.7 0.6 80 0.4 0.2 0 0.2 0.4 0.6 ANGULAR DISPLACEMENT TA - AMBIENT TEMPERATURE (˚C) Fig. 8 Radiation Diagram Fig. 8 Forward Voltage vs. Ambient Temperature © 2002 Fairchild Semiconductor Corporation QRE1113, QRE1113GR Rev. 2.6 1.0 www.fairchildsemi.com 5 QRE1113, QRE1113GR — Miniature Reflective Object Sensor Typical Performance Curves (Continued) QRE1113, QRE1113GR — Miniature Reflective Object Sensor Recommended Solder Screen Pattern for GR option (for reference only) 1.1 LED (+) 1.0 0.8 2.8 Dimensions in mm Taping Dimensions for GR option Progressive Direction 2.0±0.05 4.0 ø1.5 0.25 1.75 5.5±0.05 12.0±0.3 4.75 3.73 8.0 1.98 General tolerance ±0.1 Dimensions in mm © 2002 Fairchild Semiconductor Corporation QRE1113, QRE1113GR Rev. 2.6 www.fairchildsemi.com 6 2.2 ± 0.5 ø178.0 ± 1.0 ø60.0 ± 0.5 ø13.0 ± 0.5 9.0 ± 0.5 12.0 ± 0.15 Reflow Profile 260°C max. for 10 sec. max. 1°C to 5°C/sec Temperature (°C) 260°C 220°C Pre-heating 180°C to 200°C 60 sec. max. above 220°C 1°C to 5°C/sec 120 sec. max. Time (seconds) Note: Reflow soldering should not be done more than twice. © 2002 Fairchild Semiconductor Corporation QRE1113, QRE1113GR Rev. 2.6 www.fairchildsemi.com 7 QRE1113, QRE1113GR — Miniature Reflective Object Sensor Reel Dimensions TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I75 © Fairchild Semiconductor Corporation www.fairchildsemi.com