Advanced Power Electronics Corp. APE3311 Single Synchronous Step-down Controller FEATURES DESCRIPTION High Efficiency and Low Power Consumption The APE3311 synchronous buck controller is 4.5uA Typical Shutdown Current designed for POL voltage regulator in notebook PC Selectable Auto-Skip / PWM-Only Mode application. The main control loop, adaptive on-time, Low-Side RDS-ON Current Sense pseudo fixed frequency PWM in the APE3311 is Positive and Negative Current Limit specifically designed for handling fast load transient, Integrate OVP/UVP and Thermal Shutdown and low external component count. The Adaptive Protection on-time mode provides ease of use, fast transient Integrated Boost Diode response APE3311 supports two operating modes. Input Range: 1.8V to 28V Auto-skip mode is for high efficiency in light loading. Output Range: 0.75V to 5.5V PWM-only mode is for low noise operation. Adjustable Switch Frequency form 100kHz to The APE3311 has several protect function, includes 550kHz over voltage protection, positive and negative over 1% Output Voltage Accuracy current protection, and over temperature protection Power Good (PGOOD) Signal to prevent system or IC damage. Besides, the 1.2ms Internal Soft Start and Output Discharge internal soft start function prevents inrush current (Soft-stop) and overshoot voltage issues. The device receives a 100ns Load Step Transient Response 5V supply form another regulator. The conversion RoHS Compliant and 100% Lead (Pb)-Free input ranging is from 1.8V to 28V, and output ranging APPLICATIONS Notebook and Sub-Notebook Computers I/O Supplies is from 0.75V to 5.5V. The APE3311 is available in 14-pin and 16-pin QFN packages. System Power Supplies Data and specifications subject to change without notice 1 201101241.0 Advanced Power Electronics Corp. APE3311 TYPICAL APPLICATION CIRCUIT +5V VIN RTON R6 100k R5 300 220k EN_PSV VBST TON DRVH OUT LX PGOOD 0.1uF Cin 10uF Q1 L1 V5FILT C3 1uF Cin 10uF C4 U1 VFB TRIP Vout=1. 05V R1 8. 5k + Cout 470uF V5DRV PGOOD DRVL GND PGND APE3311 1uH Q2 R2 22k RTRIP 8.2k 2 Advanced Power Electronics Corp. APE3311 ORDERING / PACKAGE INFORMATION Top View QFN 3x3-16L 1 V5FILT 2 VFB 3 NC VBST 15 14 13 Exposed Pad NC 5 6 7 GND PGND 4 NC PGOOD 16 12 DRVH 11 LX 10 TRIP 9 V5DRV 8 DRVL OUT EN_PSV Package Type VN3: QFN 3x3-16L VN35: QFN3.5x3.5-14L TON APE3311X TON 2 OUT 3 EN_PSV VBST Top View QFN 3.5x3.5-14L 1 14 13 DRVH 12 LX Exposed Pad V5FILT 4 11 TRIP VFB 5 7 8 PGND 6 GND PGOOD 10 V5DRV NC 9 DRVL 3 Advanced Power Electronics Corp. APE3311 ABSOLUTE MAXIMUM RATINGS (at TA=25°C) VBST -0.3V to 36V VBST to LX -0.3V to 6V EN_PSV, TRIP, V5DRV, V5FILT -0.3V to 6V OUT -0.3V to 6V TON -0.3V to 6V DRVH -1V to 36V DRVH to LX -0.3V to 6V LX -1V to 30V PGOOD, DRVL -0.3V to 6V PGND, GND -0.3V to 0.3V Storage Temperature Range (TST) -65 to +150°C Junction Temperature (TJ) 125°C Lead Temperature (Soldering, 10sec.) 260°C Thermal Resistance from Junction to Case (RθJC) QFN-16 (3mmX3mm) 68°C/W QFN-14 (3.5mmX3.5mm) 60°C/W RECOMMENDED OPERATING CONDITIONS VBST 4.5V to 34V VBST to LX 4.5V to 5.5V EN_PSV, TRIP, V5DRV, V5FILT -0.1V to 5.5V OUT -0.3V to 5.5V TON -0.1V to 5.5V DRVH -0.8V to 34V DRVH to LX -0.1V to 5.5V LX -0.8V to 28V PGOOD, DRVL -0.1V to 5.5V PGND, GND -0.1V to 0.1V Operating Temperature Range -40°C to 85°C 4 Advanced Power Electronics Corp. APE3311 ELECTRICAL SPECIFICATIONS (TA =25 ºC, unless otherwise specified) PARAMETER SYM TEST CONDITION MIN TYP MAX UNIT Input Input Voltage Range VIN 1.8 28 V V5FILT 4.5 5.5 V V5DRV 4.5 5.5 V 400 750 uA 250 470 uA PWM-Only Mode Supply Current IIN-PWM Auto-Skip Mode Supply Current IIN-SKIP V5FILT + V5DRV current, EN_PVS=float, VFB=0.77V, LX = -0.1V V5FILT + V5DRV current, EN_PVS=5V, VFB=0.77V, LX = -0.1V V5DRV Shutdown Current IV5FILT-SD EN_PVS=0V 0 1 uA V5FILT Shutdown Current IV5DRV-SD EN_PVS=0V 4.5 7.5 uA 5.5 V 758 mV Output Output Voltage Range VOUT VFB Regulation Range VFB FB Input Current IFB OUT Discharge resistance RDIS Adjustable output range 0.75 742 750 VFB, absolute value 0.1 uA EN_PVS=0V, VOUT=0.5V 30 Ω 750 ns Soft Start and On-time Timer Normal On Time tONN VLX=12V, VOUT=2.5V, RTON=250kΩ Fast On Time tONF VLX=12V, VOUT=2.5V, RTON=100kΩ Slow On Time tONS VLX=12V, VOUT=2.5V, RTON=400kΩ Minimum On Time tON(MIN) VOUT=0.75V, RTON=100kΩ, VIN to 28V Minimum Off Time tOFF(MIN) VLX=-0.1V, VFB=0.7V, TRIP=open Soft Start Time tSS 264 330 396 ns 1169 80 110 ns 140 ns 440 ns IC Enable to VFB=0.735V 1 ms Source, VVBST-DRVH=0.5V 5 7 Ω Sink, VDRVH-LX=0.5V 1.5 2.5 Ω Source, VV5DRV-DRVL=0.5V 3.5 5 Ω Sink, VDRVL-PGND=0.5V 1.5 2.5 Ω DRVH-low(DRVH=1V) to DRVL-high(DRVL=4V), VLX=-0.05V 20 ns DRVL-low(DRVL=1V) to DRVH-high(DRVH=4V), VLX=-0.05V 40 ns Output Drivers DRVH Resistance DRVL Resistance Dead Time (Note1) RDRVH RDRVL tD 5 Advanced Power Electronics Corp. APE3311 ELECTRICAL SPECIFICATIONS (Continued) (TA =25 ºC, unless otherwise specified) PARAMETER SYM TEST CONDITION MIN TYP MAX UNIT 0.8 0.9 V Boot Strap Switch Forward Voltage VFBST VV5DRV-VBST, IF=10mA UVLO and LOGIC Threshold V5FILT UVLO Threshold EN_PSV Logic Input Voltage EN_PSV Source Current VUVLO Raising 3.7 3.9 4.1 V Hysteresis 200 300 400 mV EN_PSV low 0.7 1 1.3 V Hysteresis 200 250 300 mV 1.7 1.95 2.25 V EN_PSV High (Auto-Skip Mode) 2.4 2.65 2.9 V Hysteresis 100 175 250 mV VEN_PSV EN_PSV Float (PWM-Only Mode) IEN_PSV EN_PSV=GND uA 1 Current Sense TRIP Source ITRIP ITRIP Temperature Coefficient VFB VTRIP < 0.3V 9 10 11 ppm / oC 4700 Current Limit Threshold Range Setting Range VRTrip VTRIP-GND voltage Overcurrent Limit Comparator Offset VOCLoff (VTRIP-GND - VPGND-LX) voltage, VTRIP-GND=60mV 30 uA 200 mV 0 mV Negative Overcurrent Limit (VTRIP-GND - VLX-PGND) voltage, VUCLoff Comparator Offset VTRIP-GND=60mV 0.5 mV Zero Overcurrent Limit Comparator Offset 0.5 mV VZCLoff VPGND-LX voltage, EN_PSV=3.3V Power Good Function PG lower threshold (PGOOD goes high) PGOOD Threshold VTHPG PG low hysteresis (PGOOD goes low) PG higher threshold (PGOOD goes low) 87 90 93 % -4 -5.5 -7 % 121 125 129 % PGOOD Sink Current IPGMAX PGOOD=0.5V 2.5 7.5 PGOOD Delay TPGDEL Delay for PGOOD in 0.8 1 mA 1.2 ms 6 Advanced Power Electronics Corp. APE3311 ELECTRICAL SPECIFICATIONS (Continued) (TA =25ºC, unless otherwise specified) PARAMETER SYM TEST CONDITION MIN TYP MAX UNIT 121 125 129 % Under-Voltage and Over-Voltage Protection VFB OVP Trip Threshold VFB OVP Propagation delay (Note1) VFB UVP Trip Threshold VOVP OVP detect TOVPDEL VUVP VFB UVP Delay TUVPDEL UVP Enable Delay TUVPEN 1.5 UVP detect 65 Hysteresis From enable to UVP work 70 ns 75 % % 10 22 32 42 us 1 1.2 1.4 ms Thermal Shutdown Thermal Shutdown Threshold (Note1) TSD Hysteresis 155 º 10 º C C Note1: Guaranteed by design, not production tested. 7 Advanced Power Electronics Corp. APE3311 PIN DESCRIPTIONS PIN No. PIN QFN-14L QFN-16L SYMBOL PIN DESCRIPTION Enable/power save pin. Connect to ground to disable SMPS. Connect to 1 15 EN_PSV 3.3V or 5V to turn on SMPS and auto-skip mode. Float to turn on SMPS but disable skip mode (PWM-only mode). 2 16 TON On-time / frequency adjustment pin. Connect to LX with 100kΩ to 600kΩ resistor. Connect to SMPS output. This terminal serves two functions: output 3 1 OUT voltage monitor for on-time adjustment and input for the output discharge switch. 5V power supply input for all the control circuitry except gate drivers. 4 2 V5FILT 5 3 VFB 6 4 PGOOD 7 6 GND Signal ground. 8 7 PGND Power ground. 9 8 DRVL Low side N-MOS gate driver output. Drive voltage is V5DRV voltage. Apply RC filter consists of 300Ω + 1uF or 100Ω + 4.7uF at the pin input. SMPS voltage feedback input Power good output pin. PGOOD is an open-drain output. Connect a pull up resister to 5V. Current capability is 7.5mA. 5V power supply input for MOS gate drivers. Internally connected to 10 9 V5DRV VBST by a P-N diode. Connect 1uF or more to PGND to support instantaneous current for gate drivers. SMPS current limit threshold setting pin. Connect resistor form this pin to 11 10 TRIP signal ground to set threshold for both overcurrent limit and negative overcurrent limit. 12 11 LX 13 12 DRVH High side N-MOS gate driver return. High side N-MOS gate driver output. Drive voltage corresponds to VBST to LX voltage. Supply input for high side N-MOS gate driver (Boost terminal). Connect 14 13 VBST capacitor from this pin to LX. An internal P-N diode is connected between V5DRV to this pin. Designer can add external Schottky diode if forward drop is critical to drive the power N-MOS. 8 Advanced Power Electronics Corp. APE3311 BLOCK DIAGRAM -30% / -20% Delay PGOOD 25% Delay 25% OUT -10% / -15.5% V5DRV 0.75V SS VBST VFB DRVH 10uA LX Logic GND TRIP Control V5DRV LX DRVL System PGND V5FILT PGND 3.9V / 3.6V GND TON 5V 2.65V OTP EN_PSV 1V 9 Advanced Power Electronics Corp. APE3311 TYPICAL PERFORMANCE CHARACTERISTICS Fig.1 ITRIP vs. Temperature Fig.2 Switching Frequency vs. Temperature Fig.3 Switching frequency vs. RTON Resistor Fig.4 Switching Frequency vs. VIN Fig.5 Switching frequency vs. Output Current Fig.6 Switching frequency vs. Output Current 10 Advanced Power Electronics Corp. APE3311 TYPICAL PERFORMANCE CHARACTERISTICS (Continued) Fig.7 Load Regulation for Vo=1.05V Fig.8 Load Regulation for Vo=2.5V Fig.9 Line Regulation for Vo=1.05V Fig.10 Efficiency for Vo=1.05V EN_PSV EN_PSV VLX VLX VOUT PGOOD ILX Fig.11 Start-up Waveforms, PWM mode VOUT PGOOD ILX Fig.12 Start-up Waveforms, Auto-skip mode 11 Advanced Power Electronics Corp. APE3311 TYPICAL PERFORMANCE CHARACTERISTICS (Continued) EN_PSV EN_PSV VLX VLX VOUT VOUT PGOOD ILX ILX Fig.13 Shutdown Waveforms, PWM mode Fig.14 Shutdown Waveforms, Auto-skip mode DH DH DL DL VOUT VOUT IOUT IOUT Fig.15 VIN=9V, Vo=1.05V, PWM mode Fig.16 VIN=9V, Vo=1.05V, Auto-skip mode RTON=220kΩ, Cout=330uF/9mΩ *3 RTON=220kΩ, Cout=330uF/9mΩ *3 DH DH DL DL VOUT VOUT IOUT IOUT Fig.17 VIN=19V, Vo=1.05V, PWM mode Fig.18 VIN=19V, Vo=1.05V, Auto-skip mode RTON=220kΩ, Cout=330uF/9mΩ *3 RTON=220kΩ, Cout=330uF/9mΩ *3 12 Advanced Power Electronics Corp. APE3311 DETAIL DESCRIPTION The APE3311 synchronous buck controller is designed for low-voltage power supplies for notebook PC applications. The APE3311 control scheme is a constant-on-time, pseudo-fixed frequency, current-mode PWM controller and specifically designed for leading fast load transient while maintaining a relative constant switching frequency and operating over a wide range of input voltage. This architecture depends on the ESR of output capacitor; the output ripple voltage across the ESR provides the PWM ramp signal, eliminating the need for a current sense resistor. The high-side switch on-time is determined by an internal one-shot which pulse width is inversely proportional to input voltage and proportional to output voltage. Another one-shot sets a minimum off-time (440ns typ.). The on-time one-shot is triggered if the error comparator is low. +5V Bias Input The APE3311 requires an external +5V bias supply in addition to the battery voltage. The external bias supply is needed to supply the PWM control circuitry and gate drivers. The +5V input can be generated by an external linear regulator, if stand-alone capability is needed. The 5V bias supply must be power up after to the battery supply (VIN) is present to ensure startup well. EN_PSV Control The APE3311 operates with PWM-only or auto-skip mode by selecting EN_PSV pin to provide multi-function. EN_PSV connects to ground to shutdown the APE3311. EN_PSV is floated to turn on APE3311 with force PWM-only mode. In this state, the EN_PSV pin is approximately 1.95V due to internal resistor divider from +5V to ground. Use this mode to avoid certain of frequency during light load condition but at the cost of efficiency. EN_PSV connects to 3.3V or 5V to turn on APE3311 with auto-skip mode. At light load condition, the APE3311 operates in power save mode and reduces the switching frequency automatically to maintain high efficiency. This decreased frequency is performed smoothly and without increasing output ripple. On-Time One-Shot (TON) The core of pseudo fixed frequency PWM is the one-shot that sets the on-time of high-side switch for the controller. This low jitter, adjustable one-shot includes circuitry that varies the on-time in response to battery and output voltage. The on-time is disproportional to the input voltage, and proportional to the output voltage, so that the duty ratio is kept as VOUT/VIN theoretically. The on-time is given by: TON = 19 × 10 _ 12 × R TON 2VOUT ( + 100mV ) + 50ns VIN 3 Auto-Skip Mode In auto-skip mode, the internal Zero-Cross comparator looks for inductor current. When the zero current is detected, the controller enters auto-skip mode and turns low-side MOSFET off on each cycle. If the inductor current does not cross zero, the controller immediately exits auto-skip mode. The boundary between continuous and discontinuous inductor-current conduction mode, IOUT(LB), can be calculated by: IOUT(LB ) = ( VIN _ VOUT ) × VOUT 1 2 × L × fsw VIN 13 Advanced Power Electronics Corp. APE3311 DETAIL DESCRIPTION (Continued) Forced PWM-Only Mode The low-noise, forced PWM-Only mode disables the zero-crossing comparator, which controls the low-side switch on-time. The constant switching frequency has two benefits: first, the frequency can be selected to avoid noise-sensitive regions; second, the inductor ripple-current remains relatively constant which resulting in easy to design and predictable output voltage ripple. The actual switching frequency is approximate to: fSW = VOUT TON × VIN Output Voltage Setting The output can be adjusted to a voltage range from 0.75V to 5.5V. The output voltage can be calculated as: VOUT = 0.75V × ( R1 + 1) R2 Current Limit The current-limit circuit of APE3311 senses the RDS-ON of low-side MOSFET, monitors valley inductor current. The actual peak current is greater than the current-limit threshold by an amount equal to the inductor ripple current. The current limit threshold is adjusted with an external resistor at TRIP pin. VTRIP is set the current limit valley level, which is the following equation: VTRIP (mV ) = R TRIP (kΩ) × ITRIP = R TRIP (kΩ) × 10uA Note that VTRIP is internally limited ranging is from 30mV to 200mV. The valley current limit threshold can be given as: IOC( Valley ) = VTRIP (mV ) R TRIP (kΩ) × ITRIP (uA ) = R DS _ ON (mΩ) R DS _ ON (mΩ) Therefore, the load current at over-current threshold, Iocp, can be calculated as follows: IOCP = IOC( Valley ) + ( VIN _ VOUT ) × VOUT VTRIP ∆IL + = R DS _ ON 2 × L × fSW × VIN 2 The output voltage tends to fall down cause of an over current condition. Finally, it crosses the UVP threshold and shuts down the controller. The APE3311 also supports temperature compensated for RDS-ON sensing. ITRIP has 4700ppm/°C temperature coefficient to compensate the temperature dependency of the RDS-ON to keep almost identical current limit threshold in operation temperature range. There is also a negative current limit in the forced continuous conduction mode that prevents excessive reverse inductor currents when VOUT is sinking current. The negative current limit detect threshold is approximate to the negative polarity of positive current limit threshold. 14 Advanced Power Electronics Corp. APE3311 DETAIL DESCRIPTION (Continued) Soft Start The APE3311 has an internal, 1ms, soft start with overcurrent limit. When the EN_PSV pin voltage rises above the enable threshold, the controller enters its start-up sequence. Soft-start allows a gradual increase of the internal current-limit level during startup to reduce the input surge currents. Soft Stop The APE3311 discharges output by an internal 30Ω MOSFET connected between OUT and PGND while EN_PSV is low or any fault shutdown condition. The discharge time is depended of the output capacitance and the discharge resistance. Under-Voltage Lockout Protection (UVLO) The APE3311 has V5FILT under-voltage lockout protection (UVLO). This is a non-latched protection. When the V5FILT voltage is lower than 3.9V, the APE3311 is off. Power Good Output The APE3311 provides a power good (PGOOD) output, which is an open-drain output requiring a pull-up resistor. Typically connect to +5V bias supply through a 100kΩ resistor. The PGOOD comparator continuously monitors the output for both over-voltage and under-voltage conditions. In shutdown and soft-start period, PGOOD is actively low. After soft-start, PGOOD is released after 1ms delay time when the output is within 90% of the threshold. If the output voltage is without 84.5% or 125% of the target threshold, the PGOOD becomes low immediately. Note that the PGOOD window detector is independent of the output over-voltage and under-voltage protection thresholds, but held low after an UVP or OVP. Under Voltage Protection (UVP) If VFB falls lower than 70% of nominal value, the DRVH and DRVL are pulled low to turn off the MOSFETs after 32us. The APE3311 latches off until its EN_PSV input is toggled or the +5V bias supply is re-start. The UVP function is disabled during start-up period. Over Voltage Protection (OVP) If VFB exceeds 125% of nominal value, over-voltage protection is triggered. The DRVL latches high and the low side MOSFET is turned on and high side MOSFET is turned off. This action discharges the output capacitor rapidly. DRVL stays high and the output latches off until the EN_PSV input is toggled or the +5V bias supply is re-started. 15 Advanced Power Electronics Corp. APE3311 APPLICATION INFORMATION Inductor Selection The inductor value determines the ripple current and the ripple voltage of the converter. This inductor choice provides trade-offs between size vs. efficiency. Low inductor values cause large ripple currents, resulting in the smallest size, but poor efficiency and high output noise. The inductor selection is based on the ripple current which is typically set between 1/4 to 1/2 of the maximum load current. The switching frequency and ripple current determine the inductor which can be calculated as follows: L= VOUT ( VIN _ VOUT ) f SW × ∆IL × VIN The ripple current can be given by: ∆IL = ( VIN _ VOUT ) × VOUT L × fSW × VIN Output Capacitor Selection The output capacitor must have high enough ESR to satisfy the ripple requirements for loop stability. The important parameters of capacitor are the ESR, the capacitance value, the RMS ripple current rating, and the voltage rating. For the output capacitor of APE3311, ESR is the most important parameter. Determine ESR to meet the required ripple voltage as follow: ESR(mΩ) = ∆VOUT ∆IL A minimum ESR is required to generate the required ripple voltage for regulation. Due to the pseudo fixed frequency PWM mode not contain an error amplifier in the loop; a sufficient feedback signal needs to be provided from output ripple. The VFB required 15mV ripple signal at least. That will generate output ripple ∆VOUT = (VOUT/0.75) × 15 mV The capacitor is usually selected by ESR and voltage rating rather than by capacitance value. The conductive polymer capacitors are recommended to proper high capacitance and low ESR. MOSFET Selection Choose a high side MOSFET that has conduction loss equal to the switching loss at the optimum input voltage for maximum efficiency. Choose a low-side MOSFET that has the lowest RDS-ON. Ensure that the APE3311 DL gate driver can drive low-side MOSFET. The current ability of the N-channel MOSFET must be more than the peak switching current. The voltage rating VDS of the N-channel MOSFET should be at least 1.25 times the maximum input voltage. Low RDS-ON MOSFET is for reducing the conduction loss. Low CISS MOSFET is for reducing the switching loss. But most of time, this two factors are trade-off. Consider the system requirement and define the MOSFETs rating. 16 Advanced Power Electronics Corp. APE3311 APPLICATION INFORMATION (Continued) Stability Consideration The constant on-time, pseudo fixed frequency PWM scheme has natural frequency jitter. An mV order of noise on the feedback signal affects the frequency jitter from a few to ten percent of switching frequency. Double pulse and feedback loop unstable results in unstable operation. Double pulse occurs because the insufficient ripple at the VFB, or the VFB and VOUT ripple waveforms are very noisy and trigger the VFB comparator. If the ripple voltage of VFB is too small, the VFB waveform will be interfered with switching noise. The noise causes the VFB comparator to trigger too quickly after the 440ns minimum off -time. Double pulse will result in higher output ripple voltage but in most cases is harmless. Design Procedure First of all, specify the external component, input voltage range, output voltage tolerance, load current, and the desired switching frequency. There are two values of load current to consider: continuous and peak load current. Continuous load current is concerned with thermal stresses of MOSFETs. Peak load current determines the components stresses and design of threshold of the current limit. The following guidelines will help calculate the external components of the APE3311 as Typical Application Circuit. 1. Decide the switching frequency, fSW. Switching frequency is determined by the factor of efficiency, components size, and cost. Once the switching frequency is chosen, the typical on-time should be: TON(max) = VOUT fSW × VIN(min) RTON can be calculated form known TON: R TON (Ω) = (TON(max) _ 50ns) × VIN(min) _ 2 ( VOUT + 0.1) × 19 × 10 12 3 2. Select inductor. Before determine the inductance, the ripple current, ∆IL, must be defined first, typically set between 1/4 to 1/2 of the maximum load current. The ripple current can be defined as: ∆IL = ( VIN _ VOUT ) × VOUT L × fSW × VIN The inductor value can be calculated as follows: L= VOUT × ( VIN(max) _ VOUT ) ∆IL × fSW × VIN(max) The inductor current must be rated for maximum peak current. IL(PEAK ) = IOC( Valley ) + ∆IL = ( VIN _ VOUT ) × VOUT VTRIP + R DS _ON L × fSW × VIN 3. Select R1 and R2. The recommended value for R2 is between 10kΩ and 20kΩ. R1 = R2 × ( VOUT _ 0.75 ) 0.75 17 Advanced Power Electronics Corp. APE3311 APPLICATION INFORMATION (Continued) 4. Choose output capacitor. The output capacitance is based on transient ability. L × (Iout (max) + 0.5 ∆IL ) 2 C OUT(min) = ∆VOUT 2 Determine ESR to meet the required ripple voltage, above 15mV. ESR(mΩ) = ∆VOUT 15mV × VOUT = ∆IL × 0.75 V ∆IL 5. Decide current limit threshold. Determine the current limit threshold when VIN is minimum and load current is maximum conditions. The RTRIP determines by R TRIP (Ω ) = R DS _ ON 10uA × (IOCP _ ( VIN _ VOUT ) × VOUT ) 2 × L × fSW × VIN Layout Considerations The switching power stages require more attention in PCB layout. Keep the high current paths short. Separate the ground terminals. Four-layer board is recommended. Use two middle layers as ground planes, with interconnections between top and bottom layers as needed. Below lists help start layout work. 1. Minimize the resistance by keeping the power component group together with short and wide trace (60mil at least). 2. Minimize the high-side path with short and wide trace. This path starts at VIN, goes through the high-side MOSFET, through the inductor, through the output capacitor, through the input capacitor, and back to the input. 3. Minimize the low-side high current path. The high current path starts at the ground of the low-side MOSFET, goes through the low-side MOSFET, through the inductor, through the output capacitor, and back to the ground of the low-side MOSFET. 4. Power components should be grouped together near the gate drivers. Connect the drivers of DRVH and DRVL close to the gate of high-side and low-side MOSFET with short trace as possible to reduce stray inductance. 5. Place feedback resistors R1 and R2 near VFB and GND pin with short wire and should be far away to the noise source, such as switching loop. Use ground plane to shield feedback trace from power components. 6. Keep sensitive analog node (VFB, TRIP, and TON) away from high-speed switching loop to avoid noise coupling. 7. The current limit setting resistor, RTRIP, should connect to TRIP and GND pin directly, next to the IC. 8. Group the analog ground connection of the V5FILT bypass capacitors, VFB, and TRIP. Connect the analog ground plane directly to GND pin of the IC. 9. Group the power ground connection of the VIN capacitor, VOUT capacitor, and the source of the low-side MOSFETs as close as possible. Connect this power ground plane directly to PGND pin of the IC. 10. PGND is used as the positive current sensing node so PGND should be connected to the source terminal of the bottom MOSFET. 11. Use plane connection between GND (analog ground) and PGND (power ground) near the IC. 18 Advanced Power Electronics Corp. APE3311 MARKING INFORMATION QFN 3x3-16L 3311 YWWS Part Number Date Code (YWWS) Y:Year WW：Week S：Sequence QFN 3.5x3.5-14L 3311 YWWS Part Number Date Code (YWWS) Y:Year WW：Week S：Sequence 19 Advanced Power Electronics Corp. APE3311 PACKAGE OUTLINE QFN 3x3-16L Millimeters SYMBOLS E E2 1 D D2 MIN NOM MAX A 0.75 0.85 1.00 A1 0.00 0.02 0.05 A2 0.175 0.200 0.250 b 0.18 0.23 0.30 D 2.95 3.00 3.05 D2 1.50 1.55 1.60 E 2.95 3.00 3.05 E2 1.50 1.55 1.60 e L e L 0.50 (ref.) 0.35 0.40 0.45 b BOTTOM VIEW A A2 A1 1.All Dimension Are In Millimeters. 2.Dimension Does Not Include Mold Protrusions. Draw No. M1-QFN16-G-v00 20 Advanced Power Electronics Corp. APE3311 PACKAGE OUTLINE (Continued) QFN 3.5x3.5-14L E E1 9 10 11 12 13 8 D b D1 D2 7 1 5 4 3 NOM MAX 0.80 0.85 1.00 A1 0.00 0.03 0.05 b 0.19 0.24 0.29 C 0.195 0.203 0.211 D 3.45 3.50 3.55 D1 2.00 2.05 2.10 1.50 ref. D2 2 e L MIN A 14 6 Millimeters SYMBOLS E2 E 3.45 3.50 3.55 E1 2.00 2.05 2.10 E2 2.00 ref. e 0.5 (ref.) L 0.35 0.40 0.45 BOTTOM VIEW A A1 C 1.All Dimension Are In Millimeters. 2.Dimension Does Not Include Mold Protrusions. Draw No. I1-VN35-14L-G-v00 21