MCR70, MCR71 SERIES.aspx?ext=

MCR70, MCR71 SERIES
SILICON CONTROLLED RECTIFIERS
High-reliability discrete products
and engineering services since 1977
FEATURES


Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
Value
Symbol
Repetitive peak forward or reverse blocking voltage (1)
MCR70
MCR71
1
2
3
MCR70
25
50
100
VDRM/VRRM
Peak discharge current (2)
Unit
MCR71
Volts
ITM
850
1700
Amps
IT(RMS)
IT(AV)
35
22
55
35
Amps
Peak non-repetitive surge current
(1/2 cycle, sine wave, 60Hz, TJ = 125°C)
ITSM
350
550
Amps
Circuit fusing (t = 8.3 ms)
I2t
510
1255
A2s
Critical rate of rise of current (3)
di/dt
100
Forward peak gate power (t ≤ 20µs)
PGM
20
Watts
Forward average gate power
PG(AV)
0.5
Watts
IGM
2
Amps
Operating junction storage temperature range
TJ
-40 to +125
°C
Storage temperature range
Tstg
-40 to +150
°C
-
30
In. lb.
On-state current (TC ≤ 75°C)
Forward peak gate current (t ≤ 20µs)
Mounting torque
1.
2.
3.
200
A/µs
The rated voltage can be applied over the rated operating junction temperatures without incurring damage. Ratings apply for shorted-open or shorted-gate conditions or
negative voltage on the gate. Devices should not be tested for blocking capability in a manner such that the voltage supplied exceeds the rated blocking voltages.
Rating is for tw = 1ms.
Test conditions: IG = 150mA, VD = Rated VDRM, ITM = Rated value, TJ = 125°C.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Symbol
Max
Unit
RӨJC
1
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Characteristic
Peak forward or reverse blocking current (rated VDRM or VRRM)
(TJ = 25°C)
(TJ = 125°C)
On-state voltage (1)
(ITM = 70A)
(ITM = 175A)
(ITM = 850A, tw = 1ms) (2)
(ITM = 1700A, tw = 1ms) (2)
Gate trigger current (continuous dc)
(VD = 12V, RL = 100Ω)
MCR70 SERIES
MCR71 SERIES
MCR70 SERIES
MCR71 SERIES
Symbol
Min
Typ
Max
Unit
IDRM, IRRM
-
-
10
2
µA
mA
-
1.5
1.7
6
7
1.85
2.1
-
2
10
30
VTM
IGT
Volts
mA
Rev. 20150306
High-reliability discrete products
and engineering services since 1977
Gate trigger voltage (continuous dc)
(VD = 12V, RL = 100Ω)
(VD = rated VDRM, RL = 1kΩ, TJ = 125°C)
MCR70, MCR71 SERIES
SILICON CONTROLLED RECTIFIERS
VGT
0.2
1
-
1.5
-
Volts
Holding current (ITM = 0.5A, gate open)
IH
3
15
50
mA
Latching current (VD = 12Vdc, IG = 150mA, tr ≤ 50µs)
IL
-
30
60
mA
dv/dt
10
-
-
V/µs
-
1
1.2
µS
Critical rate of rise off state voltage
(VD = rated VDRM, gate open, exponential waveform, TC = 125°C)
Turn on time (3)
(VD = rated VDRM, IG = 150mA)
(ITM = 70A, peak)
(ITM = 110A, peak)
Notes:
1.
2.
3.
ton
MCR70
SERIES
MCR71
SERIES
Duty cycle ≤ 1%. Pulse width ≤ 300µs.
Characteristic applies for tw = 1ms. tw is defined as 5 time constants of an exponentially decaying current pulse.
The gate controlled turn-on time in a crowbar circuit will be influenced by the circuit inductance.
MECHANICAL CHARACTERISTICS
Case:
TO-48
Marking:
Body painted, alpha-numeric
Polarity:
Anode is stud
Rev. 20150306
High-reliability discrete products
and engineering services since 1977
MCR70, MCR71 SERIES
SILICON CONTROLLED RECTIFIERS
Rev. 20150306
High-reliability discrete products
and engineering services since 1977
MCR70, MCR71 SERIES
SILICON CONTROLLED RECTIFIERS
Rev. 20150306