MCR67 SERIES.aspx?ext=

High-reliability discrete products
and engineering services since 1977
MCR67 SERIES
SILICON CONTROLLED RECTIFIERS
FEATURES


Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
Symbol
Peak repetitive off-state voltage(1)
(TJ = -40 to +125°C, gate open)
MCR67-1
MCR67-2
MCR67-3
Value
Unit
25
50
100
V
VDRM
VRRM
Peak discharge current (2)
ITM
750
A
On-state RMS current (180° conduction angles, TC = 85°C)
IT(RMS)
25
A
Average on-state current (180° conduction angles, TC = 85°C)
IT(AV)
16
A
Peak non-repetitive surge current
(half-cycle, sine wave, 60Hz, TJ = 125°C)
ITSM
Circuit fusing consideration (t = 8.3ms)
I2t
375
Forward peak gate current (pulse width ≤ 1.0µs, TC = 85°C)
IGM
2.0
A
Forward peak gate power (pulse width ≤ 1.0µs, TC = 85°C)
PGM
20
W
Forward average gate power (t = 8.3ms, TC = 85°C)
A
300
A2s
PG(AV)
0.5
W
Operating junction temperature range
TJ
-40 to +125
°C
Storage temperature range
Tstg
-40 to +150
°C
-
8.0
In. lb.
Mounting torque
Note 1: VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative
potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
Note 2: Ratings apply for tw = 1ms.
Note 3: Test conditions: IG = 150mA, VD = rated VDRM, ITM = rated value, TJ = 125°C.
THERMAL CHARACTERISTICS
Symbol
Maximum
Unit
Thermal resistance, junction to case
Characteristic
RӨJC
1.5
°C/W
Thermal resistance, junction to ambient
RӨJA
60
°C/W
Lead solder temperature
(lead length 1/8” from case, 10s max)
TL
260
°C
Rev. 20130115
High-reliability discrete products
and engineering services since 1977
MCR67 SERIES
SILICON CONTROLLED RECTIFIERS
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Characteristic
Symbol
Min
Typ
Max
-
-
10
2.0
-
6.0
1.8
-
2.0
7.0
30
-
0.65
1.5
0.2
0.40
-
Unit
OFF CHARACTERISTICS
Peak forward or reverse blocking current
(VAK = Rated VDRM or VRRM, gate open)
TC = 25°C
TC = 125°C
IDRM,
IRRM
µA
mA
ON CHARACTERISTICS
Peak forward on-state voltage*
(ITM = 50A)(4)
(ITM = 750A, tw = 1ms)(5)
VTM
Gate trigger current (continuous dc)
(VAK = 12V, RL = 100Ω)
IGT
Gate trigger voltage (continuous dc)
(VAK = 12V, RL = 100Ω)
VGT
Gate non-trigger voltage
(VAK = 12V, RL = 100Ω, T J = 125°C)
VGD
Holding current
(VD = 12V, initiating current = 200mA, gate open)
IH
Latching current
(VD = 12V, IG = 150mA)
IL
Gate controlled turn-on time(6)
(VD = rated VDRM, IG = 150mA)
(ITM = 50A peak)
tgt
V
mA
V
V
mA
3.0
15
50
-
-
60
-
1.0
-
10
-
-
-
-
100
mA
µs
DYNAMIC CHARACTERISTICS
Critical rate of rise of off-state voltage
(VD = rated VDRM, gate open, exponential waveform, TJ = 125°C)
dv/dt
Critical rate of rise of on-state current(6)
(IG = 150mA, TJ = 125°C)
di/dt
V/µs
A/µs
Note 4: Pulse width ≤ 300µs, duty cycle ≤ 2%.
Note 5: Ratings apply for tw = 1ms.
Note 6: The gate controlled turn-on time in a crowbar circuit will be influenced by the circuit inductance.
Rev. 20130115
High-reliability discrete products
and engineering services since 1977
MCR67 SERIES
SILICON CONTROLLED RECTIFIERS
MECHANICAL CHARACTERISTICS
Case:
TO-220AB
Marking:
Body painted, alpha-numeric
Pin out:
See below
Rev. 20130115
High-reliability discrete products
and engineering services since 1977
MCR67 SERIES
SILICON CONTROLLED RECTIFIERS
Rev. 20130115
High-reliability discrete products
and engineering services since 1977
MCR67 SERIES
SILICON CONTROLLED RECTIFIERS
Rev. 20130115