HUF75307P3, HUF75307D3, HUF75307D3S
Data Sheet
June 1999
15A, 55V, 0.090 Ohm, N-Channel UltraFET
Power MOSFETs
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET™ process.
This advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable
and battery-operated products.
4353.6
Features
• 15A, 55V
• Simulation Models
- Temperature Compensated PSPICE® and SABER©
Models
- SPICE and SABER Thermal Impedance Models
Available on the WEB at:
www.semi.Intersil .com/families/models.htm
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Formerly developmental type TA75307.
Ordering Information
PART NUMBER
File Number
D
PACKAGE
BRAND
HUF75307P3
TO-220AB
75307P
HUF75307D3
TO-251AA
75307D
HUF75307D3S
TO-252AA
75307D
G
S
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-252AA variant in tape and reel, e.g., HUF75307D3ST.
Packaging
JEDEC TO-220AB
JEDEC TO-251AA
SOURCE
DRAIN
GATE
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
DRAIN
(FLANGE)
JEDEC TO-252AA
DRAIN
(FLANGE)
GATE
SOURCE
4-40
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
UltraFET™ is a trademark of Intersil Corporation. PSPICE® is a trademark of MicroSim Corporation.
SABER is a Copyright of Analogy, Inc. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
HUF75307P3, HUF75307D3, HUF75307D3S
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current
Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
UNITS
V
V
V
55
55
±20
15
Figure 4
Figures 6, 14, 15
45
0.3
-55 to 175
A
W
W/oC
oC
300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications
TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
55
-
-
V
VDS = 50V, VGS = 0V
-
-
1
µA
VDS = 45V, VGS = 0V, TC = 150oC
-
-
250
µA
VGS = ±20V
-
-
±100
nA
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
BVDSS
IDSS
IGSS
ID = 250µA, VGS = 0V (Figure 11)
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250µA (Figure 10)
2
-
4
V
Drain to Source On Resistance
rDS(ON)
ID = 15A, VGS = 10V (Figure 9)
-
0.075
0.090
Ω
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case
RθJC
(Figure 3)
-
-
3.3
oC/W
Thermal Resistance Junction to Ambient
RθJA
TO-220AB
-
-
62
oC/W
TO-251AA, TO-252AA
-
-
100
oC/W
VDD = 30V, ID ≅ 15A,
RL = 2.0Ω, VGS = 10V,
RGS = 100Ω
-
-
60
ns
-
7
-
ns
tr
-
40
-
ns
td(OFF)
-
35
-
ns
tf
-
45
-
ns
tOFF
-
-
100
ns
-
16
20
nC
-
9
11
nC
-
0.6
0.8
nC
SWITCHING SPECIFICATIONS (VGS = 10V)
Turn-On Time
tON
Turn-On Delay Time
td(ON)
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Qg(TOT)
VGS = 0V to 20V
Gate Charge at 10V
Qg(10)
VGS = 0V to 10V
Threshold Gate Charge
Qg(TH)
VGS = 0V to 2V
VDD = 30V,
ID ≅ 15A,
RL = 2.0Ω
Ig(REF) = 1.0mA
(Figure13)
Gate to Source Gate Charge
Qgs
-
1.2
-
nC
Reverse Transfer Capacitance
Qgd
-
4
-
nC
4-41
HUF75307P3, HUF75307D3, HUF75307D3S
TC = 25oC, Unless Otherwise Specified
Electrical Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
-
250
-
pF
-
100
-
pF
-
25
-
pF
CAPACITANCE SPECIFICATIONS
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 12)
Source to Drain Diode Specifications
PARAMETER
SYMBOL
Source to Drain Diode Voltage
MIN
TYP
MAX
UNITS
ISD = 15A
-
-
1.25
V
trr
ISD = 15A, dISD/dt = 100A/µs
-
-
45
ns
QRR
ISD = 15A, dISD/dt = 100A/µs
-
-
55
nC
VSD
Reverse Recovery Time
Reverse Recovered Charge
TEST CONDITIONS
Typical Performance Curves
20
1.0
ID, DRAIN CURRENT (A)
POWER DISSIPATION MULTIPLIER
1.2
0.8
0.6
0.4
15
10
5
0.2
0
0
0
25
50
75
100
125
25
175
150
50
TC , CASE TEMPERATURE (oC)
ZθJC, NORMALIZED
THERMAL IMPEDANCE
1
100
125
150
175
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
2
75
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
PDM
0.1
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
SINGLE PULSE
0.01
10-5
10-4
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (s)
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
4-42
100
101
HUF75307P3, HUF75307D3, HUF75307D3S
Typical Performance Curves
(Continued)
IDM, PEAK CURRENT (A)
200
TC = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
100
175 - TC
I = I25
150
VGS = 10V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
10
10-5
10-4
10-3
10-2
10-1
100
101
t, PULSE WIDTH (s)
FIGURE 4. PEAK CURRENT CAPABILITY
100
200
IAS, AVALANCHE CURRENT (A)
ID, DRAIN CURRENT (A)
TJ = MAX RATED
TC = 25oC
100µs
10
1ms
1
10ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
100
STARTING TJ = 25oC
10
STARTING TJ = 150oC
VDSS(MAX) = 55V
0.1
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
1
10
1
100
200
0.01
0.001
VDS, DRAIN TO SOURCE VOLTAGE (V)
0.1
1
10
tAV, TIME IN AVALANCHE (ms)
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
25
VGS = 20V
VGS = 10V
20
VGS = 7V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
25
VGS = 6V
15
10
VGS = 5V
5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
TC = 25oC
0
0
1
2
3
4
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 7. SATURATION CHARACTERISTICS
4-43
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDD = 15V
20
-55oC
25oC
15
175oC
10
5
0
5
0
1.5
3.0
4.5
6.0
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 8. TRANSFER CHARACTERISTICS
7.5
HUF75307P3, HUF75307D3, HUF75307D3S
Typical Performance Curves
(Continued)
1.2
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VGS = 10V, ID = 15A
VGS = VDS, ID = 250µA
NORMALIZED GATE
THRESHOLD VOLTAGE
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
2.5
2.0
1.5
1.0
0.5
1.0
0.8
0.6
-80
-40
0
40
80
120
160
-80
200
-40
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
40
80
120
160
200
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
400
1.2
VGS = 0, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
ID = 250µA
C, CAPACITANCE (pF)
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
0
TJ, JUNCTION TEMPERATURE (oC)
1.1
1.0
300
CISS
200
COSS
100
CRSS
0.9
0
-80
-40
0
40
80
120
160
200
10
0
TJ , JUNCTION TEMPERATURE (oC)
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
VGS , GATE TO SOURCE VOLTAGE (V)
20
8
6
4
2
VDD = 30V
0
2
4
WAVEFORMS IN
DESCENDING ORDER:
ID = 15A
ID = 12A
ID = 7.5A
ID = 4A
6
8
10
Qg, GATE CHARGE (nC)
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 13. GATE CHARGE WAVEFORMS FOR CONSTANT GATE CURRENT
4-44
40
50
60
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
10
0
30
VDS , DRAIN TO SOURCE VOLTAGE (V)
HUF75307P3, HUF75307D3, HUF75307D3S
Test Circuits and Waveforms
VDS
BVDSS
L
tP
VARY tP TO OBTAIN
REQUIRED PEAK IAS
IAS
+
RG
VDS
VDD
VDD
-
VGS
DUT
tP
0V
IAS
0
0.01Ω
tAV
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
VDS
VDD
RL
Qg(TOT)
VDS
VGS = 20V
VGS
Qg(10)
+
VDD
VGS = 10V
VGS
DUT
VGS = 2V
IG(REF)
0
Qg(TH)
Qgs
Qgd
Ig(REF)
0
FIGURE 16. GATE CHARGE TEST CIRCUIT
FIGURE 17. GATE CHARGE WAVEFORM
VDS
tON
tOFF
td(ON)
td(OFF)
tf
tr
RL
VDS
90%
90%
+
VGS
-
VDD
10%
10%
0
DUT
90%
RGS
VGS
VGS
0
FIGURE 18. SWITCHING TIME TEST CIRCUIT
4-45
10%
50%
50%
PULSE WIDTH
FIGURE 19. RESISTIVE SWITCHING WAVEFORMS
HUF75307P3, HUF75307D3, HUF75307D3S
PSPICE Electrical Model
.SUBCKT HUF75307 2 1 3 ;
rev June 1997
CA 12 8 4.5e-10
CB 15 14 4.1e-10
CIN 6 8 2.154e-10
LDRAIN
DPLCAP
10
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
RLDRAIN
RSLC1
51
DBREAK
+
RSLC2
5
51
EBREAK 11 7 17 18 56
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1
ESLC
11
-
RDRAIN
6
8
ESG
EVTHRES
+ 19 8
+
LGATE
GATE
1
LDRAIN 2 5 1e-9
LGATE 1 9 5.97e-10
LSOURCE 3 7 2.39e-9
K1 LGATE LSOURCE 0.131
+
17
EBREAK 18
50
-
IT 8 17 1
EVTEMP
RGATE +
18 22
9
20
21
DBODY
-
16
MWEAK
6
MMED
MSTRO
RLGATE
LSOURCE
CIN
8
SOURCE
3
7
RSOURCE
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
RLSOURCE
S1A
12
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 1e-3
RGATE 9 20 1.9
RLDRAIN 2 5 10
RLGATE 1 9 60
RLSOURCE 3 7 24
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 5.5e-2
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
S1A
S1B
S2A
S2B
DRAIN
2
5
S2A
13
8
14
13
S1B
17
18
RVTEMP
S2B
13
CA
RBREAK
15
CB
6
8
EGS
-
19
-
IT
14
+
+
VBAT
5
8
EDS
-
+
8
22
RVTHRES
6 12 13 8 S1AMOD
13 12 13 8 S1BMOD
6 15 14 13 S2AMOD
13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*35),4))}
.MODEL DBODYMOD D (IS=1.6e-13 RS=1.28e-2 IKF=5.5 N=0.985 TRS1=2.9e-3 TRS2=-4e-6 CJO=3.5e-10 TT=3.1e-8 M=0.45 XTI=6)
.MODEL DBREAKMOD D (RS=2.5e-1 IKF=0.1 TRS1=-4e-3 TRS2=3e-5)
.MODEL DPLCAPMOD D (CJO=5e-10 IS=1e-30 N=10 M=0.95)
.MODEL MMEDMOD NMOS (VTO=3.25 KP=2.2 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=1.9)
.MODEL MSTROMOD NMOS (VTO=3.75 KP=14.75 IS=1e-30 N=10 TOX=1 L=1u W=1u)
.MODEL MWEAKMOD NMOS (VTO=2.88 KP=0.03 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=19 RS=0.1)
.MODEL RBREAKMOD RES (TC1=1.12e-3 TC2=1e-6)
.MODEL RDRAINMOD RES (TC1=2.3e-1 TC2=6e-4)
.MODEL RSLCMOD RES (TC1=4e-3 TC2=1e-6)
.MODEL RSOURCEMOD RES (TC1=1e-3 TC2=6e-6)
.MODEL RVTHRESMOD RES (TC=-3.31e-3 TC2=-1.49e-5)
.MODEL RVTEMPMOD RES (TC1=-1.4e-3 TC2=1e-9)
.MODEL S1AMOD VSWITCH (RON=1e-5
.MODEL S1BMOD VSWITCH (RON=1e-5
.MODEL S2AMOD VSWITCH (RON=1e-5
.MODEL S2BMOD VSWITCH (RON=1e-5
ROFF=0.1
ROFF=0.1
ROFF=0.1
ROFF=0.1
VON=-8.1 VOFF=-4)
VON=-4 VOFF=-8.1)
VON=0 VOFF=2)
VON=2 VOFF=0)
.ENDS
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
4-46
HUF75307P3, HUF75307D3, HUF75307D3S
SABER Electrical Model
REV February 1999
template huf75307 n2, n1, n3
electrical n2, n1, n3
{
var i iscl
d..model dbodymod = (is = 1.6e-13, xti = 6, cjo = 3.5e-10, tt = 3.1e-8, n = 0.985, m = 0.45)
d..model dbreakmod = ()
DPLCAP
d..model dplcapmod = (cjo = 5e-10, is = 1e-30, n = 10, m = 0.95)
m..model mmedmod = (type=_n, vto = 3.25, kp = 2.2, is = 1e-30, tox = 1)
10
m..model mstrongmod = (type=_n, vto = 3.75, kp = 14.75, is = 1e-30, tox = 1)
m..model mweakmod = (type=_n, vto = 2.88, kp = 0.03, is = 1e-30, tox = 1)
sw_vcsp..model s1amod = (ron = 1e-5, roff = 0.1, von = -8.1, voff = -4)
RSLC2
sw_vcsp..model s1bmod = (ron = 1e-5, roff = 0.1, von = -4, voff = -8.1)
sw_vcsp..model s2amod = (ron = 1e-5, roff = 0.1, von = 0, voff = 2)
sw_vcsp..model s2bmod = (ron = 1e-5, roff = 0.1, von = 2, voff = 0)
LDRAIN
RSLC1
51
d.dbody n7 n71 = model=dbodymod
d.dbreak n72 n11 = model=dbreakmod
d.dplcap n10 n5 = model=dplcapmod
GATE
1
EVTEMP
RGATE + 18 22
9
20
MWEAK
MSTRO
CIN
DBODY
EBREAK
+
17
18
MMED
-
8
l.ldrain n2 n5 = 1e-9
l.lgate n1 n9 = 5.97e-10
l.lsource n3 n7 = 2.39e-9
71
11
16
6
RLGATE
i.it n8 n17 = 1
21
RDBODY
DBREAK
RDRAIN
EVTHRES
+ 19 8
+
LGATE
72
50
6
8
ESG
RLDRAIN
RDBREAK
ISCL
-
c.ca n12 n8 = 4.5e-10
c.cb n15 n14 = 4.1e-10
c.cin n6 n8 = 2.154e-10
DRAIN
2
5
LSOURCE
7
RSOURCE
RLSOURCE
S1A
12
m.mmed n16 n6 n8 n8 = model=mmedmod, l = 1u, w = 1u
m.mstrong n16 n6 n8 n8 = model=mstrongmod, l = 1u, w = 1u
m.mweak n16 n21 n8 n8 = model=mweakmod, l = 1u, w = 1u
res.rbreak n17 n18 = 1, tc1 = 1.12e-3, tc2 = 1e-6
res.rdbody n71 n5 = 1.28e-2, tc1 = 2.9e-3, tc2 = -4e-6
res.rdbreak n72 n5 = 0.25, tc1 = -4e-3, tc2 = 3e-5
res.rdrain n50 n16 = 1e-3, tc1 = 2.31-1, tc2 = 6e-4
res.rgate n9 n20 = 1.9
res.rldrain n2 n5 = 10
res.rlgate n1 n9 = 60
res.rlsource n3 n7 = 24
res.rslc1 n5 n51 = 1e-6, tc1 = 4e-3, tc2 = 1e-6
res.rslc2 n5 n50 = 1e3
res.rsource n8 n7 = 5.5e-2, tc1 = 1e-3, tc2 = 6e-6
res.rvtemp n18 n19 = 1, tc1 = -1.4e-3, tc2 = 1e-9
res.rvthres n22 n8 = 1, tc1 = -3.31e-3, tc2 = -1.49e-5
S2A
13
8
S1B
CA
17
18
RVTEMP
S2B
13
CB
6
8
EGS
19
-
sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod
sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod
sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod
sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod
v.vbat n22 n19 = dc = 1
equations {
i (n51->n50) + = iscl
iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/35))** 4))
}
}
-
IT
14
+
+
spe.ebreak n11 n7 n17 n18 = 56
spe.eds n14 n8 n5 n8 = 1
spe.egs n13 n8 n6 n8 = 1
spe.esg n6 n10 n6 n8 = 1
spe.evtemp n20 n6 n18 n22 = 1
spe.evthres n6 n21 n19 n8 = 1
4-47
RBREAK
15
14
13
VBAT
5
8
EDS
-
+
8
22
RVTHRES
SOURCE
3
HUF75307P3, HUF75307D3, HUF75307D3S
SPICE Thermal Model
th
REV February 1999
JUNCTION
HUF75307
CTHERM1 th 6 8.0e-4
CTHERM2 6 5 1.6e-3
CTHERM3 5 4 1.9e-3
CTHERM4 4 3 2.6e-3
CTHERM5 3 2 5.5e-3
CTHERM6 2 tl 1.8e-2
RTHERM1
CTHERM1
6
RTHERM1 th 6 8.0e-3
RTHERM2 6 5 2.1e-2
RTHERM3 5 4 2.2e-1
RTHERM4 4 3 6.4e-1
RTHERM5 3 2 7.7e-1
RTHERM6 2 tl 1.0
RTHERM2
CTHERM2
5
SABER Thermal Model
RTHERM3
CTHERM3
SABER thermal model HUF75307
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 = 8.0e-4
ctherm.ctherm2 6 5 = 1.6e-3
ctherm.ctherm3 5 4 = 1.9e-3
ctherm.ctherm4 4 3 = 2.6e-3
ctherm.ctherm5 3 2 = 5.5e-3
ctherm.ctherm6 2 tl = 1.8e-2
4
RTHERM4
CTHERM4
3
rtherm.rtherm1 th 6 = 8.0e-3
rtherm.rtherm2 6 5 = 2.1e-2
rtherm.rtherm3 5 4 = 2.2e-1
rtherm.rtherm4 4 3 = 6.4e-1
rtherm.rtherm5 3 2 = 7.7e-1
rtherm.rtherm6 2 tl = 1.0
}
RTHERM5
CTHERM5
2
RTHERM6
CTHERM6
tl
CASE
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
4-48
HUF75307P3, HUF75307D3, HUF75307D3S
Data Sheet
June 1999
15A, 55V, 0.090 Ohm, N-Channel UltraFET
Power MOSFETs
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET™ process.
This advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable
and battery-operated products.
4353.6
Features
• 15A, 55V
• Simulation Models
- Temperature Compensated PSPICE® and SABER©
Models
- SPICE and SABER Thermal Impedance Models
Available on the WEB at:
www.semi.Intersil .com/families/models.htm
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Formerly developmental type TA75307.
Ordering Information
PART NUMBER
File Number
D
PACKAGE
BRAND
HUF75307P3
TO-220AB
75307P
HUF75307D3
TO-251AA
75307D
HUF75307D3S
TO-252AA
75307D
G
S
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-252AA variant in tape and reel, e.g., HUF75307D3ST.
Packaging
JEDEC TO-220AB
JEDEC TO-251AA
SOURCE
DRAIN
GATE
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
DRAIN
(FLANGE)
JEDEC TO-252AA
DRAIN
(FLANGE)
GATE
SOURCE
4-40
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
UltraFET™ is a trademark of Intersil Corporation. PSPICE® is a trademark of MicroSim Corporation.
SABER is a Copyright of Analogy, Inc. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
HUF75307P3, HUF75307D3, HUF75307D3S
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current
Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
UNITS
V
V
V
55
55
±20
15
Figure 4
Figures 6, 14, 15
45
0.3
-55 to 175
A
W
W/oC
oC
300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications
TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
55
-
-
V
VDS = 50V, VGS = 0V
-
-
1
µA
VDS = 45V, VGS = 0V, TC = 150oC
-
-
250
µA
VGS = ±20V
-
-
±100
nA
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
BVDSS
IDSS
IGSS
ID = 250µA, VGS = 0V (Figure 11)
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250µA (Figure 10)
2
-
4
V
Drain to Source On Resistance
rDS(ON)
ID = 15A, VGS = 10V (Figure 9)
-
0.075
0.090
Ω
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case
RθJC
(Figure 3)
-
-
3.3
oC/W
Thermal Resistance Junction to Ambient
RθJA
TO-220AB
-
-
62
oC/W
TO-251AA, TO-252AA
-
-
100
oC/W
VDD = 30V, ID ≅ 15A,
RL = 2.0Ω, VGS = 10V,
RGS = 100Ω
-
-
60
ns
-
7
-
ns
tr
-
40
-
ns
td(OFF)
-
35
-
ns
tf
-
45
-
ns
tOFF
-
-
100
ns
-
16
20
nC
-
9
11
nC
-
0.6
0.8
nC
SWITCHING SPECIFICATIONS (VGS = 10V)
Turn-On Time
tON
Turn-On Delay Time
td(ON)
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Qg(TOT)
VGS = 0V to 20V
Gate Charge at 10V
Qg(10)
VGS = 0V to 10V
Threshold Gate Charge
Qg(TH)
VGS = 0V to 2V
VDD = 30V,
ID ≅ 15A,
RL = 2.0Ω
Ig(REF) = 1.0mA
(Figure13)
Gate to Source Gate Charge
Qgs
-
1.2
-
nC
Reverse Transfer Capacitance
Qgd
-
4
-
nC
4-41
HUF75307P3, HUF75307D3, HUF75307D3S
TC = 25oC, Unless Otherwise Specified
Electrical Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
-
250
-
pF
-
100
-
pF
-
25
-
pF
CAPACITANCE SPECIFICATIONS
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 12)
Source to Drain Diode Specifications
PARAMETER
SYMBOL
Source to Drain Diode Voltage
MIN
TYP
MAX
UNITS
ISD = 15A
-
-
1.25
V
trr
ISD = 15A, dISD/dt = 100A/µs
-
-
45
ns
QRR
ISD = 15A, dISD/dt = 100A/µs
-
-
55
nC
VSD
Reverse Recovery Time
Reverse Recovered Charge
TEST CONDITIONS
Typical Performance Curves
20
1.0
ID, DRAIN CURRENT (A)
POWER DISSIPATION MULTIPLIER
1.2
0.8
0.6
0.4
15
10
5
0.2
0
0
0
25
50
75
100
125
25
175
150
50
TC , CASE TEMPERATURE (oC)
ZθJC, NORMALIZED
THERMAL IMPEDANCE
1
100
125
150
175
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
2
75
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
PDM
0.1
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
SINGLE PULSE
0.01
10-5
10-4
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (s)
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
4-42
100
101
HUF75307P3, HUF75307D3, HUF75307D3S
Typical Performance Curves
(Continued)
IDM, PEAK CURRENT (A)
200
TC = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
100
175 - TC
I = I25
150
VGS = 10V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
10
10-5
10-4
10-3
10-2
10-1
100
101
t, PULSE WIDTH (s)
FIGURE 4. PEAK CURRENT CAPABILITY
100
200
IAS, AVALANCHE CURRENT (A)
ID, DRAIN CURRENT (A)
TJ = MAX RATED
TC = 25oC
100µs
10
1ms
1
10ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
100
STARTING TJ = 25oC
10
STARTING TJ = 150oC
VDSS(MAX) = 55V
0.1
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
1
10
1
100
200
0.01
0.001
VDS, DRAIN TO SOURCE VOLTAGE (V)
0.1
1
10
tAV, TIME IN AVALANCHE (ms)
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
25
VGS = 20V
VGS = 10V
20
VGS = 7V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
25
VGS = 6V
15
10
VGS = 5V
5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
TC = 25oC
0
0
1
2
3
4
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 7. SATURATION CHARACTERISTICS
4-43
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDD = 15V
20
-55oC
25oC
15
175oC
10
5
0
5
0
1.5
3.0
4.5
6.0
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 8. TRANSFER CHARACTERISTICS
7.5
HUF75307P3, HUF75307D3, HUF75307D3S
Typical Performance Curves
(Continued)
1.2
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VGS = 10V, ID = 15A
VGS = VDS, ID = 250µA
NORMALIZED GATE
THRESHOLD VOLTAGE
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
2.5
2.0
1.5
1.0
0.5
1.0
0.8
0.6
-80
-40
0
40
80
120
160
-80
200
-40
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
40
80
120
160
200
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
400
1.2
VGS = 0, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
ID = 250µA
C, CAPACITANCE (pF)
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
0
TJ, JUNCTION TEMPERATURE (oC)
1.1
1.0
300
CISS
200
COSS
100
CRSS
0.9
0
-80
-40
0
40
80
120
160
200
10
0
TJ , JUNCTION TEMPERATURE (oC)
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
VGS , GATE TO SOURCE VOLTAGE (V)
20
8
6
4
2
VDD = 30V
0
2
4
WAVEFORMS IN
DESCENDING ORDER:
ID = 15A
ID = 12A
ID = 7.5A
ID = 4A
6
8
10
Qg, GATE CHARGE (nC)
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 13. GATE CHARGE WAVEFORMS FOR CONSTANT GATE CURRENT
4-44
40
50
60
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
10
0
30
VDS , DRAIN TO SOURCE VOLTAGE (V)
HUF75307P3, HUF75307D3, HUF75307D3S
Test Circuits and Waveforms
VDS
BVDSS
L
tP
VARY tP TO OBTAIN
REQUIRED PEAK IAS
IAS
+
RG
VDS
VDD
VDD
-
VGS
DUT
tP
0V
IAS
0
0.01Ω
tAV
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
VDS
VDD
RL
Qg(TOT)
VDS
VGS = 20V
VGS
Qg(10)
+
VDD
VGS = 10V
VGS
DUT
VGS = 2V
IG(REF)
0
Qg(TH)
Qgs
Qgd
Ig(REF)
0
FIGURE 16. GATE CHARGE TEST CIRCUIT
FIGURE 17. GATE CHARGE WAVEFORM
VDS
tON
tOFF
td(ON)
td(OFF)
tf
tr
RL
VDS
90%
90%
+
VGS
-
VDD
10%
10%
0
DUT
90%
RGS
VGS
VGS
0
FIGURE 18. SWITCHING TIME TEST CIRCUIT
4-45
10%
50%
50%
PULSE WIDTH
FIGURE 19. RESISTIVE SWITCHING WAVEFORMS
HUF75307P3, HUF75307D3, HUF75307D3S
PSPICE Electrical Model
.SUBCKT HUF75307 2 1 3 ;
rev June 1997
CA 12 8 4.5e-10
CB 15 14 4.1e-10
CIN 6 8 2.154e-10
LDRAIN
DPLCAP
10
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
RLDRAIN
RSLC1
51
DBREAK
+
RSLC2
5
51
EBREAK 11 7 17 18 56
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1
ESLC
11
-
RDRAIN
6
8
ESG
EVTHRES
+ 19 8
+
LGATE
GATE
1
LDRAIN 2 5 1e-9
LGATE 1 9 5.97e-10
LSOURCE 3 7 2.39e-9
K1 LGATE LSOURCE 0.131
+
17
EBREAK 18
50
-
IT 8 17 1
EVTEMP
RGATE +
18 22
9
20
21
DBODY
-
16
MWEAK
6
MMED
MSTRO
RLGATE
LSOURCE
CIN
8
SOURCE
3
7
RSOURCE
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
RLSOURCE
S1A
12
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 1e-3
RGATE 9 20 1.9
RLDRAIN 2 5 10
RLGATE 1 9 60
RLSOURCE 3 7 24
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 5.5e-2
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
S1A
S1B
S2A
S2B
DRAIN
2
5
S2A
13
8
14
13
S1B
17
18
RVTEMP
S2B
13
CA
RBREAK
15
CB
6
8
EGS
-
19
-
IT
14
+
+
VBAT
5
8
EDS
-
+
8
22
RVTHRES
6 12 13 8 S1AMOD
13 12 13 8 S1BMOD
6 15 14 13 S2AMOD
13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*35),4))}
.MODEL DBODYMOD D (IS=1.6e-13 RS=1.28e-2 IKF=5.5 N=0.985 TRS1=2.9e-3 TRS2=-4e-6 CJO=3.5e-10 TT=3.1e-8 M=0.45 XTI=6)
.MODEL DBREAKMOD D (RS=2.5e-1 IKF=0.1 TRS1=-4e-3 TRS2=3e-5)
.MODEL DPLCAPMOD D (CJO=5e-10 IS=1e-30 N=10 M=0.95)
.MODEL MMEDMOD NMOS (VTO=3.25 KP=2.2 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=1.9)
.MODEL MSTROMOD NMOS (VTO=3.75 KP=14.75 IS=1e-30 N=10 TOX=1 L=1u W=1u)
.MODEL MWEAKMOD NMOS (VTO=2.88 KP=0.03 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=19 RS=0.1)
.MODEL RBREAKMOD RES (TC1=1.12e-3 TC2=1e-6)
.MODEL RDRAINMOD RES (TC1=2.3e-1 TC2=6e-4)
.MODEL RSLCMOD RES (TC1=4e-3 TC2=1e-6)
.MODEL RSOURCEMOD RES (TC1=1e-3 TC2=6e-6)
.MODEL RVTHRESMOD RES (TC=-3.31e-3 TC2=-1.49e-5)
.MODEL RVTEMPMOD RES (TC1=-1.4e-3 TC2=1e-9)
.MODEL S1AMOD VSWITCH (RON=1e-5
.MODEL S1BMOD VSWITCH (RON=1e-5
.MODEL S2AMOD VSWITCH (RON=1e-5
.MODEL S2BMOD VSWITCH (RON=1e-5
ROFF=0.1
ROFF=0.1
ROFF=0.1
ROFF=0.1
VON=-8.1 VOFF=-4)
VON=-4 VOFF=-8.1)
VON=0 VOFF=2)
VON=2 VOFF=0)
.ENDS
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
4-46
HUF75307P3, HUF75307D3, HUF75307D3S
SABER Electrical Model
REV February 1999
template huf75307 n2, n1, n3
electrical n2, n1, n3
{
var i iscl
d..model dbodymod = (is = 1.6e-13, xti = 6, cjo = 3.5e-10, tt = 3.1e-8, n = 0.985, m = 0.45)
d..model dbreakmod = ()
DPLCAP
d..model dplcapmod = (cjo = 5e-10, is = 1e-30, n = 10, m = 0.95)
m..model mmedmod = (type=_n, vto = 3.25, kp = 2.2, is = 1e-30, tox = 1)
10
m..model mstrongmod = (type=_n, vto = 3.75, kp = 14.75, is = 1e-30, tox = 1)
m..model mweakmod = (type=_n, vto = 2.88, kp = 0.03, is = 1e-30, tox = 1)
sw_vcsp..model s1amod = (ron = 1e-5, roff = 0.1, von = -8.1, voff = -4)
RSLC2
sw_vcsp..model s1bmod = (ron = 1e-5, roff = 0.1, von = -4, voff = -8.1)
sw_vcsp..model s2amod = (ron = 1e-5, roff = 0.1, von = 0, voff = 2)
sw_vcsp..model s2bmod = (ron = 1e-5, roff = 0.1, von = 2, voff = 0)
LDRAIN
RSLC1
51
d.dbody n7 n71 = model=dbodymod
d.dbreak n72 n11 = model=dbreakmod
d.dplcap n10 n5 = model=dplcapmod
GATE
1
EVTEMP
RGATE + 18 22
9
20
MWEAK
MSTRO
CIN
DBODY
EBREAK
+
17
18
MMED
-
8
l.ldrain n2 n5 = 1e-9
l.lgate n1 n9 = 5.97e-10
l.lsource n3 n7 = 2.39e-9
71
11
16
6
RLGATE
i.it n8 n17 = 1
21
RDBODY
DBREAK
RDRAIN
EVTHRES
+ 19 8
+
LGATE
72
50
6
8
ESG
RLDRAIN
RDBREAK
ISCL
-
c.ca n12 n8 = 4.5e-10
c.cb n15 n14 = 4.1e-10
c.cin n6 n8 = 2.154e-10
DRAIN
2
5
LSOURCE
7
RSOURCE
RLSOURCE
S1A
12
m.mmed n16 n6 n8 n8 = model=mmedmod, l = 1u, w = 1u
m.mstrong n16 n6 n8 n8 = model=mstrongmod, l = 1u, w = 1u
m.mweak n16 n21 n8 n8 = model=mweakmod, l = 1u, w = 1u
res.rbreak n17 n18 = 1, tc1 = 1.12e-3, tc2 = 1e-6
res.rdbody n71 n5 = 1.28e-2, tc1 = 2.9e-3, tc2 = -4e-6
res.rdbreak n72 n5 = 0.25, tc1 = -4e-3, tc2 = 3e-5
res.rdrain n50 n16 = 1e-3, tc1 = 2.31-1, tc2 = 6e-4
res.rgate n9 n20 = 1.9
res.rldrain n2 n5 = 10
res.rlgate n1 n9 = 60
res.rlsource n3 n7 = 24
res.rslc1 n5 n51 = 1e-6, tc1 = 4e-3, tc2 = 1e-6
res.rslc2 n5 n50 = 1e3
res.rsource n8 n7 = 5.5e-2, tc1 = 1e-3, tc2 = 6e-6
res.rvtemp n18 n19 = 1, tc1 = -1.4e-3, tc2 = 1e-9
res.rvthres n22 n8 = 1, tc1 = -3.31e-3, tc2 = -1.49e-5
S2A
13
8
S1B
CA
17
18
RVTEMP
S2B
13
CB
6
8
EGS
19
-
sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod
sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod
sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod
sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod
v.vbat n22 n19 = dc = 1
equations {
i (n51->n50) + = iscl
iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/35))** 4))
}
}
-
IT
14
+
+
spe.ebreak n11 n7 n17 n18 = 56
spe.eds n14 n8 n5 n8 = 1
spe.egs n13 n8 n6 n8 = 1
spe.esg n6 n10 n6 n8 = 1
spe.evtemp n20 n6 n18 n22 = 1
spe.evthres n6 n21 n19 n8 = 1
4-47
RBREAK
15
14
13
VBAT
5
8
EDS
-
+
8
22
RVTHRES
SOURCE
3
HUF75307P3, HUF75307D3, HUF75307D3S
SPICE Thermal Model
th
REV February 1999
JUNCTION
HUF75307
CTHERM1 th 6 8.0e-4
CTHERM2 6 5 1.6e-3
CTHERM3 5 4 1.9e-3
CTHERM4 4 3 2.6e-3
CTHERM5 3 2 5.5e-3
CTHERM6 2 tl 1.8e-2
RTHERM1
CTHERM1
6
RTHERM1 th 6 8.0e-3
RTHERM2 6 5 2.1e-2
RTHERM3 5 4 2.2e-1
RTHERM4 4 3 6.4e-1
RTHERM5 3 2 7.7e-1
RTHERM6 2 tl 1.0
RTHERM2
CTHERM2
5
SABER Thermal Model
RTHERM3
CTHERM3
SABER thermal model HUF75307
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 = 8.0e-4
ctherm.ctherm2 6 5 = 1.6e-3
ctherm.ctherm3 5 4 = 1.9e-3
ctherm.ctherm4 4 3 = 2.6e-3
ctherm.ctherm5 3 2 = 5.5e-3
ctherm.ctherm6 2 tl = 1.8e-2
4
RTHERM4
CTHERM4
3
rtherm.rtherm1 th 6 = 8.0e-3
rtherm.rtherm2 6 5 = 2.1e-2
rtherm.rtherm3 5 4 = 2.2e-1
rtherm.rtherm4 4 3 = 6.4e-1
rtherm.rtherm5 3 2 = 7.7e-1
rtherm.rtherm6 2 tl = 1.0
}
RTHERM5
CTHERM5
2
RTHERM6
CTHERM6
tl
CASE
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