WFP840C Silicon N-Channel MOSFET Features � 9A,500V, RDS(on)(Max0.75Ω)@VGS=10V � Ultra-low Gate charge(Typical 28nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a electronic lamp ballast. Absolute Maximum Ratings Symbol VDSS Parameter Value Units 500 V Continuous Drain Current(@Tc=25℃) 9 A Continuous Drain Current(@Tc=100℃) 5.4 A 36 A ±30 V Drain Source Voltage ID IDM Drain Current Pulsed (Note1) VGS Gate to Source Voltage EAS Single Pulsed Avalanche Energy (Note2) 360 mJ EAR Repetitive Avalanche Energy (Note1) 13.5 mJ dv/dt Peak Diode Recovery dv /dt (Note3) 4.5 V/ ns Total Power Dissipation(@Tc=25℃) 130 W Derating Factor above 25℃ 1.07 W/℃ -40~150 ℃ 300 ℃ PD TJ,Tstg TL Junction and Storage Temperature Channel Temperature Thermal Characteristics Symbol Parameter Value Min Typ Max Units RQJC Thermal Resistance , Junction -to -Case - - 0.96 ℃/W RQCS Thermal Resistance , Case-to-Sink - 0.5 - ℃/W RQJA Thermal Resistance , Junction-to -Ambient - - 62.5 ℃/W WT-F018-Rev.A0 Apr.2013 Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. WFP840C Electrical Characteristics(Tc=25℃) Characteristics Symbol Gate leakage current Gate-source breakdown voltage Test Condition Min Type Max Unit IGSS VGS=±30V,VDS=0V - - ±100 nA V(BR)GSS IG=±10 µA,VDS=0V ±30 - - V VDS=500V,VGS=0V - - 1 µA 10 µA Drain cut -off current IDSS VDS=400V,TC=125℃ Drain -source breakdown voltage V(BR)DSS Breakdown voltage Temperature △BVDSS/ ID=250 µA,VGS=0V 500 - - V - 0.57 - V/℃ ID=250µA,Referenced Coefficient △TJ to 25℃ Gate threshold voltage VGS(th) VDS=VGS,ID=250 µA 2 - 4 V Drain -source ON resistance RDS(ON) VGS=10V,ID=4.5A - - 0.75 Ω Forward Transconductance gfs VDS=40V,ID=4.5A - 6.5 - S Input capacitance Ciss VDS=25V, - 790 1030 Reverse transfer capacitance Crss VGS=0V, - 24 30 Output capacitance Coss f=1MHz - 130 170 VDD=250V, - 65 140 ID=9A - 18 15 RG=25Ω - 64 125 - 93 195 - 28 35 - 4 - - 15 - Min Type Max Unit Rise time tr Turn-on time ton Switching time pF ns Fall time tf Turn-off time (Note4,5) toff Total gate charge(gate-source VDD=400V, Qg plus gate-drain) VGS=10V, nC Gate-source charge Qgs Gate-drain("miller") Charge Qgd ID=9A (Note4,5) Source-Drain Ratings and Characteristics(Ta=25℃) Characteristics Symbol Test Condition Continuous drain reverse current IDR - - - 9 A Pulse drain reverse current IDRP - - - 36 A Forward voltage(diode) VDSF IDR=9A,VGS=0V - - 1.4 V Reverse recovery time trr IDR=9A,VGS=0V, - 335 - ns Reverse recovery charge Qrr dIDR / dt =100 A / µs - 2.95 - µC Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=8mH IAS=9A,VDD=50V,RG=25Ω,Starting TJ=25℃ 3.ISD≤9A,di/dt≤200A/us,VDD<BVDSS,STARTING TJ=25℃ 4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2% 5. Essentially independent of operating temperature. This transistor is an electrostatic sensitive device Please handle with caution 2/7 Steady, keep you advance WFP840C Fig.1 On State Characteristics Fig.3 On-Resistance Variation vs Drain Current And Gate Voltage Fig.5 Capacitance Characteristis Fig.2 Transfer Characteristics Fig.4 Body Diode Forward Voltage Variation with Source Current and Temperature Fig.6 Gate Charge Characteristics 3/7 Steady, keep you advance WFP840C Fig.7 Breakdown Voltage Variation Vs Temperature Fig.9 Maximum Safe Operation Area Fig.8 On-Resistance Variation vs.Temperature Fig.10 Maximum Drain Current vs Case temperature Fig.11 Transient thermal Response Curve 4/7 Steady, keep you advance WFP840C Fig.12 Gate Test circuit & Waveform Fig.13 Resistive Switching Test Circuit & Waveform Fig.14 Unclamped Inductive Switching Test Circuit & Waveform 5/7 Steady, keep you advance WFP840C Fig.15 Peak Diode Recovery dv/dt Test Circuit & Waveform 6/7 Steady, keep you advance WFP840C TO-220 Package Dimension Unit:mm 7/7 Steady, keep you advance