SO T2 3 PMV20XNEA 20 V, N-channel Trench MOSFET 9 March 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • • • • • Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM AEC-Q101 qualified 3. Applications • • • • Relay driver High-speed line driver Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - 20 V VGS gate-source voltage -12 - 12 V ID drain current - - 6.3 A - 16 20 mΩ VGS = 4.5 V; Tamb = 25 °C [1] Static characteristics RDSon drain-source on-state resistance [1] VGS = 4.5 V; ID = 6.3 A; Tj = 25 °C Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad 2 for drain 6 cm . Scan or click this QR code to view the latest information for this product PMV20XNEA NXP Semiconductors 20 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline Graphic symbol 3 D G 1 2 TO-236AB (SOT23) S 017aaa255 6. Ordering information Table 3. Ordering information Type number PMV20XNEA Package Name Description Version TO-236AB plastic surface-mounted package; 3 leads SOT23 7. Marking Table 4. Marking codes Type number Marking code [1] PMV20XNEA DT% [1] PMV20XNEA Product data sheet % = placeholder for manufacturing site code All information provided in this document is subject to legal disclaimers. 9 March 2016 © NXP Semiconductors N.V. 2016. All rights reserved 2 / 16 PMV20XNEA NXP Semiconductors 20 V, N-channel Trench MOSFET 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - 20 V VGS gate-source voltage -12 12 V ID drain current VGS = 4.5 V; Tamb = 25 °C [1] - 6.3 A VGS = 4.5 V; Tamb = 100 °C [1] - 4 A IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs - 25 A EDS(AL)S non-repetitive drain-source avalanche energy Tj(init) = 25 °C; ID = 1.6 A; DUT in - 16 mJ total power dissipation Tamb = 25 °C [2] - 0.46 W [1] - 1.19 W - 6.94 W Ptot avalanche (unclamped) Tsp = 25 °C Tj junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C Source-drain diode IS source current Tamb = 25 °C [1] - 0.73 A HBM [3] - 2000 V ESD maximum rating VESD electrostatic discharge voltage [1] [2] [3] PMV20XNEA Product data sheet Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad 2 for drain 6 cm . Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. Measured between all pins. All information provided in this document is subject to legal disclaimers. 9 March 2016 © NXP Semiconductors N.V. 2016. All rights reserved 3 / 16 PMV20XNEA NXP Semiconductors 20 V, N-channel Trench MOSFET 017aaa123 120 Pder (%) Ider (%) 80 80 40 40 0 - 75 Fig. 1. 017aaa124 120 - 25 25 75 125 Tj (°C) 0 - 75 175 Normalized total power dissipation as a function of junction temperature Fig. 2. - 25 25 75 Tj (°C) 175 Normalized continuous drain current as a function of junction temperature aaa-021633 102 ID (A) 125 Limit RDSon = VDS/ID tp = 10 µs tp = 100 µs 10 tp = 1 ms 1 tp = 10 ms DC; Tsp = 25 °C 10-1 10-2 10-1 Fig. 3. tp = 100 ms DC; Tamb = 25 °C; drain mounting pad 6 cm2 1 10 VDS (V) 102 Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage PMV20XNEA Product data sheet All information provided in this document is subject to legal disclaimers. 9 March 2016 © NXP Semiconductors N.V. 2016. All rights reserved 4 / 16 PMV20XNEA NXP Semiconductors 20 V, N-channel Trench MOSFET 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-sp) thermal resistance from junction to solder point [1] [2] Min Typ Max Unit [1] - 227 270 K/W [2] - 91 105 K/W - 13 18 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. aaa-021634 103 Zth(j-a) (K/W) 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm . duty cycle = 1 102 0.75 0.33 0.50 0.25 0.20 0.10 10 0.05 0.02 0.01 0 1 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 102 aaa-021635 duty cycle = 1 0.75 0.50 Zth(j-a) (K/W) 0.33 0.25 0.20 0.10 10 0.05 0.02 0.01 0 1 10-3 10-2 10-1 FR4 PCB, mounting pad for drain 6 cm Fig. 5. 1 10 102 tp (s) 103 2 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMV20XNEA Product data sheet All information provided in this document is subject to legal disclaimers. 9 March 2016 © NXP Semiconductors N.V. 2016. All rights reserved 5 / 16 PMV20XNEA NXP Semiconductors 20 V, N-channel Trench MOSFET 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 20 - - V VGSth gate-source threshold voltage ID = 250 µA; VDS=VGS; Tj = 25 °C 0.75 1 1.25 V IDSS drain leakage current VDS = 20 V; VGS = 0 V; Tj = 25 °C - - 1 µA IGSS gate leakage current VGS = 12 V; VDS = 0 V; Tj = 25 °C - - 10 µA VGS = -12 V; VDS = 0 V; Tj = 25 °C - - -10 µA VGS = 4.5 V; VDS = 0 V; Tj = 25 °C - - 5 µA VGS = -4.5 V; VDS = 0 V; Tj = 25 °C - - -5 µA VGS = 4.5 V; ID = 6.3 A; Tj = 25 °C - 16 20 mΩ VGS = 4.5 V; ID = 6.3 A; Tj = 150 °C - 24 30 mΩ VGS = 2.5 V; ID = 4.8 A; Tj = 25 °C - 24 34 mΩ RDSon drain-source on-state resistance gfs forward transconductance VDS = 10 V; ID = 6.3 A; Tj = 25 °C - 26.8 - S RG gate resistance f = 1 MHz - 7.2 - Ω Dynamic characteristics QG(tot) total gate charge VDS = 10 V; ID = 6.3 A; VGS = 4.5 V; - 9.9 15 nC QGS gate-source charge Tj = 25 °C - 1.4 - nC QGD gate-drain charge - 3.1 - nC Ciss input capacitance VDS = 10 V; f = 1 MHz; VGS = 0 V; - 930 - pF Coss output capacitance Tj = 25 °C - 178 - pF Crss reverse transfer capacitance - 144 - pF td(on) turn-on delay time VDS = 10 V; ID = 6.3 A; VGS = 4.5 V; - 16 - ns tr rise time RG(ext) = 6 Ω; Tj = 25 °C - 40 - ns td(off) turn-off delay time - 44 - ns tf fall time - 22 - ns - 0.7 1.2 V Source-drain diode VSD source-drain voltage PMV20XNEA Product data sheet IS = 0.9 A; VGS = 0 V; Tj = 25 °C All information provided in this document is subject to legal disclaimers. 9 March 2016 © NXP Semiconductors N.V. 2016. All rights reserved 6 / 16 PMV20XNEA NXP Semiconductors 20 V, N-channel Trench MOSFET aaa-021636 28 ID (A) 24 ID (A) VGS = 4.5 V 20 10-5 1.8 V 4 0 1 2 3 VDS (V) 10-6 4 0 0.5 1.0 VGS (V) 1.5 Tj = 25 °C Tj = 25 °C; VDS = 5 V Output characteristics: drain current as a Fig. 7. function of drain-source voltage; typical values Sub-threshold drain current as a function of gate-source voltage aaa-021638 50 2.0 V RDSon (mΩ) RDSon (mΩ) 80 30 60 2.4 V 20 4 2.5 V 10 0 aaa-021639 100 2.2 V 40 3.0 V Tj = 25 °C VGS = 4.5 V 0 5 10 15 20 ID (A) 0 25 Product data sheet 0 4 8 VGS (V) 12 ID = 2.2 A Drain-source on-state resistance as a function of drain current; typical values PMV20XNEA Tj = 150 °C 20 Tj = 25 °C Fig. 8. max 2.0 V 8 Fig. 6. typ 2.3 V 12 0 min 10-4 2.5 V 16 aaa-021637 10-3 Fig. 9. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. 9 March 2016 © NXP Semiconductors N.V. 2016. All rights reserved 7 / 16 PMV20XNEA NXP Semiconductors 20 V, N-channel Trench MOSFET aaa-021640 25 aaa-021641 2.0 ID (A) a 20 1.5 15 1.0 10 Tj = 150 °C 0.5 5 0 Tj = 25 °C 0 1 2 0 -60 3 VGS (V) VDS > ID × RDSon Fig. 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values 60 120 Tj (°C) 180 Fig. 11. Normalized drain-source on-state resistance as a function of junction temperature; typical values aaa-021642 2.0 0 aaa-021643 104 VGS(th) (V) C (pF) 1.5 Ciss 103 1.0 max Coss typ 0.5 Crss min 0 -60 0 60 120 Tj (°C) 102 10-1 180 ID = 0.25 mA; VDS = VGS Product data sheet 10 VDS (V) 102 f = 1 MHz; VGS = 0 V Fig. 12. Gate-source threshold voltage as a function of junction temperature PMV20XNEA 1 Fig. 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. 9 March 2016 © NXP Semiconductors N.V. 2016. All rights reserved 8 / 16 PMV20XNEA NXP Semiconductors 20 V, N-channel Trench MOSFET aaa-021644 5 VDS VGS (V) ID 4 VGS(pl) 3 VGS(th) VGS 2 QGS1 1 0 QGS2 0 4 8 QG (nC) QGS QGD QG(tot) 003aaa508 Fig. 15. MOSFET transistor: Gate charge waveform definitions 12 ID = 6.32 A; VDS = 10 V; Tamb = 25 °C Fig. 14. Gate-source voltage as a function of gate charge; typical values aaa-021645 4 IS (A) 3 2 Tj = 150 °C 1 Tj = 25 °C 0 0 0.4 0.8 VSD (V) 1.2 VGS = 0 V Fig. 16. Source current as a function of source-drain voltage; typical values PMV20XNEA Product data sheet All information provided in this document is subject to legal disclaimers. 9 March 2016 © NXP Semiconductors N.V. 2016. All rights reserved 9 / 16 PMV20XNEA NXP Semiconductors 20 V, N-channel Trench MOSFET 11. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig. 17. Duty cycle definition 11.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. PMV20XNEA Product data sheet All information provided in this document is subject to legal disclaimers. 9 March 2016 © NXP Semiconductors N.V. 2016. All rights reserved 10 / 16 PMV20XNEA NXP Semiconductors 20 V, N-channel Trench MOSFET 12. Package outline Plastic surface-mounted package; 3 leads SOT23 B D A E X HE v A 3 Q A A1 1 c 2 e1 bp w B Lp e detail X 0 1 2 mm scale Dimensions (mm are the original dimensions) Unit mm max nom min A A1 1.1 0.1 0.9 bp c D E 0.48 0.15 3.0 1.4 0.38 0.09 2.8 1.2 e e1 1.9 0.95 HE Lp Q 2.5 0.45 0.55 2.1 0.15 0.45 v w 0.2 0.1 sot023_po Outline version SOT23 References IEC JEDEC JEITA European projection Issue date 14-06-19 14-09-22 TO-236AB Fig. 18. Package outline TO-236AB (SOT23) PMV20XNEA Product data sheet All information provided in this document is subject to legal disclaimers. 9 March 2016 © NXP Semiconductors N.V. 2016. All rights reserved 11 / 16 PMV20XNEA NXP Semiconductors 20 V, N-channel Trench MOSFET 13. Soldering 3.3 2.9 1.9 solder lands 3 solder resist 2 1.7 solder paste occupied area 0.6 (3×) 0.7 (3×) Dimensions in mm 0.5 (3×) 0.6 (3×) 1 sot023_fr Fig. 19. Reflow soldering footprint for TO-236AB (SOT23) 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 solder resist 2.6 occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot023_fw Fig. 20. Wave soldering footprint for TO-236AB (SOT23) PMV20XNEA Product data sheet All information provided in this document is subject to legal disclaimers. 9 March 2016 © NXP Semiconductors N.V. 2016. All rights reserved 12 / 16 PMV20XNEA NXP Semiconductors 20 V, N-channel Trench MOSFET 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PMV20XNEA v.1 20160309 Product data sheet - - PMV20XNEA Product data sheet All information provided in this document is subject to legal disclaimers. 9 March 2016 © NXP Semiconductors N.V. 2016. All rights reserved 13 / 16 PMV20XNEA NXP Semiconductors 20 V, N-channel Trench MOSFET In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 15. 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All rights reserved 14 / 16 PMV20XNEA NXP Semiconductors 20 V, N-channel Trench MOSFET No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 15.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 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Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................3 9 Thermal characteristics .........................................5 10 Characteristics ....................................................... 6 11 11.1 Test information ................................................... 10 Quality information ............................................. 10 12 Package outline ................................................... 11 13 Soldering .............................................................. 12 14 Revision history ................................................... 13 15 15.1 15.2 15.3 15.4 Legal information .................................................14 Data sheet status ............................................... 14 Definitions ...........................................................14 Disclaimers .........................................................14 Trademarks ........................................................ 15 © NXP Semiconductors N.V. 2016. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 9 March 2016 PMV20XNEA Product data sheet All information provided in this document is subject to legal disclaimers. 9 March 2016 © NXP Semiconductors N.V. 2016. All rights reserved 16 / 16