MBR40H100WT D

MBR40H100WTG
Switch Mode
Power Rectifier
100 V, 40 A
Features and Benefits
•
•
•
•
•
•
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Low Forward Voltage
Low Power Loss/High Efficiency
High Surge Capacity
175°C Operating Junction Temperature
40 A Total (20 A Per Diode Leg)
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
SCHOTTKY BARRIER
RECTIFIER
40 AMPERES
100 VOLTS
1
2, 4
Applications
• Power Supply − Output Rectification
• Power Management
• Instrumentation
3
Mechanical Characteristics:
•
•
•
•
•
Case: Epoxy, Molded
Epoxy Meets UL 94 V−0 @ 0.125 in
Weight: 4.3 Grams (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
TO−247
CASE 340AL
1
2
3
MARKING DIAGRAM
MAXIMUM RATINGS
Please See the Table on the Following Page
B40H100
AYWWG
B40H100
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
© Semiconductor Components Industries, LLC, 2014
July, 2014 − Rev. 5
1
Device
Package
Shipping
MBR40H100WTG
TO−247
(Pb−Free)
30 Units/Rail
Publication Order Number:
MBR40H100WT/D
MBR40H100WTG
MAXIMUM RATINGS (Per Diode Leg)
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
100
V
Average Rectified Forward Current
TC = 148°C, per Diode
TC = 150°C, per Device
IF(AV)
Peak Repetitive Forward Current
(Square Wave, 20 kHz) TC = 144°C
IFRM
40
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM
200
A
Operating Junction Temperature (Note 1)
TJ
+175
°C
Storage Temperature
Tstg
*65 to +175
°C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/ms
WAVAL
400
mJ
> 400
> 8000
V
0.58
32
°C/W
Rating
A
20
40
Controlled Avalanche Energy (see test conditions in Figures 10 and 11)
ESD Ratings: Machine Model = C
Human Body Model = 3B
THERMAL CHARACTERISTICS
Maximum Thermal Resistance − Junction−to−Case
− Junction−to−Ambient (Socket Mounted)
RqJC
RqJA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
ELECTRICAL CHARACTERISTICS
Characterisitc
Symbol
Instantaneous Forward Voltage (Note 2)
(IF = 20 A, TJ = 25°C)
(IF = 20 A, TJ = 125°C)
(IF = 40 A, TJ = 25°C)
(IF = 40 A, TJ = 125°C)
vF
Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, TJ = 125°C)
(Rated dc Voltage, TJ = 25°C)
iR
Min
Typ
Max
−
−
−
−
0.74
0.61
0.85
0.72
0.80
0.67
0.90
0.76
−
−
2.0
0.0012
10
0.01
Unit
V
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
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2
MBR40H100WTG
IF, INSTANTANEOUS FORWARD CURRENT (A)
IF, INSTANTANEOUS FORWARD CURRENT (A)
TYPICAL CHARACTERISTICS
100
175°C
150°C
10
25°C
125°C
1.0
0.1
0
0.1 0.2 0.3 0.4 0.5 0.6
0.7 0.8 0.9 1.0 1.1
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
100
175°C
150°C
10
125°C
1.0
0.1
0
Figure 2. Maximum Forward Voltage
1.0E−01
IR, MAXIMUM REVERSE CURRENT (A)
1.0E−01
IR, REVERSE CURRENT (A)
1.0E−04
1.0E−04
1.0E−05
1.0E−05
TJ = 25°C
1.0E−06
TJ = 25°C
1.0E−06
1.0E−07
1.0E−07
1.0E−08
0
20
60
40
80
100
1.0E−08
0
20
40
60
80
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Reverse Current
Figure 4. Maximum Reverse Current
IF(AV), AVERAGE FORWARD CURRENT (A)
VR, REVERSE VOLTAGE (VOLTS)
32
dc
IF, AVERAGE FORWARD CURRENT (A)
TJ = 125°C
1.0E−03
TJ = 125°C
28
Square Wave
20
16
12
8.0
4.0
0
120
TJ = 150°C
1.0E−02
TJ = 150°C
1.0E−03
24
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Forward Voltage
1.0E−02
25°C
130
140
150
160
170
180
100
20
RqJA = 16°C/W
18
16
dc
14
12
Square Wave
10
8.0
6.0
4.0
dc
RqJA = 60°C/W
No Heatsink
2.0
0
0
25
50
Square Wave
75
100
125
150
175
TC, CASE TEMPERATURE (°C)
TA, AMBIENT TEMPERATURE (°C)
Figure 5. Current Derating, Case, Per Leg
Figure 6. Current Derating, Ambient, Per Leg
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3
MBR40H100WTG
R(t), TRANSIENT THERMAL RESISTANCE
10000
30
28
TJ = 25°C
TJ = 175°C
24
C, CAPACITANCE (pF)
PF(AV), AVERAGE POWER DISSIPATION (W)
TYPICAL CHARACTERISTICS
Square Wave
20
dc
16
12
8.0
1000
100
4.0
10
0
4.0
0
8.0
12
16
20
24
28 30
0
40
20
80
60
IF(AV), AVERAGE FORWARD CURRENT (A)
VR, REVERSE VOLTAGE (V)
Figure 7. Forward Power Dissipation
Figure 8. Capacitance
100
10
1
0.1
D = 0.5
0.2
0.1
0.05
0.01
P(pk)
t1
0.01
t2
SINGLE PULSE
0.001
0.000001
0.00001
DUTY CYCLE, D = t1/t2
0.0001
0.001
0.1
0.01
1
t1, TIME (sec)
Figure 9. Thermal Response Junction−to−Case
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4
10
100
1000
MBR40H100WTG
+VDD
IL
10 mH COIL
BVDUT
VD
MERCURY
SWITCH
ID
ID
IL
DUT
S1
VDD
t0
Figure 10. Test Circuit
t1
t2
t
Figure 11. Current−Voltage Waveforms
The unclamped inductive switching circuit shown in
Figure 10 was used to demonstrate the controlled avalanche
capability of this device. A mercury switch was used instead
of an electronic switch to simulate a noisy environment
when the switch was being opened.
When S1 is closed at t0 the current in the inductor IL ramps
up linearly; and energy is stored in the coil. At t1 the switch
is opened and the voltage across the diode under test begins
to rise rapidly, due to di/dt effects, when this induced voltage
reaches the breakdown voltage of the diode, it is clamped at
BVDUT and the diode begins to conduct the full load current
which now starts to decay linearly through the diode, and
goes to zero at t2.
By solving the loop equation at the point in time when S1
is opened; and calculating the energy that is transferred to
the diode it can be shown that the total energy transferred is
equal to the energy stored in the inductor plus a finite amount
of energy from the VDD power supply while the diode is in
breakdown (from t1 to t2) minus any losses due to finite
component resistances. Assuming the component resistive
elements are small Equation (1) approximates the total
energy transferred to the diode. It can be seen from this
equation that if the VDD voltage is low compared to the
breakdown voltage of the device, the amount of energy
contributed by the supply during breakdown is small and the
total energy can be assumed to be nearly equal to the energy
stored in the coil during the time when S1 was closed,
Equation (2).
EQUATION (1):
ǒ
BV
2
DUT
W
[ 1 LI LPK
AVAL
2
V
BV
DUT DD
EQUATION (2):
2
W
[ 1 LI LPK
AVAL
2
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5
Ǔ
MBR40H100WTG
PACKAGE DIMENSIONS
TO−247
CASE 340AL
ISSUE A
B
A
NOTE 4
E
SEATING
PLANE
0.635
M
B A
P
A
E2/2
Q
E2
NOTE 4
D
S
NOTE 3
1
2
4
DIM
A
A1
b
b2
b4
c
D
E
E2
e
L
L1
P
Q
S
3
L1
NOTE 5
L
2X
b2
c
b4
3X
e
A1
b
0.25
NOTE 7
M
B A
M
NOTE 6
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. SLOT REQUIRED, NOTCH MAY BE ROUNDED.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH.
MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE
DIMENSIONS ARE MEASURED AT THE OUTERMOST
EXTREME OF THE PLASTIC BODY.
5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY
L1.
6. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE
TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91.
7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED
BY L1.
M
MILLIMETERS
MIN
MAX
4.70
5.30
2.20
2.60
1.00
1.40
1.65
2.35
2.60
3.40
0.40
0.80
20.30
21.40
15.50
16.25
4.32
5.49
5.45 BSC
19.80
20.80
3.50
4.50
3.55
3.65
5.40
6.20
6.15 BSC
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MBR40H100WT/D