Power Transistors 2SD2538 Silicon NPN triple diffusion planer type Darlington Unit: mm For power amplification 9.9±0.3 3.0±0.5 2.9±0.2 ■ Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 5 V Peak collector current ICP 4 A Collector current IC 2 A PC 35 W TC = 25°C Ta = 25°C φ 3.2±0.1 15.0±0.5 • High forward current transfer ratio hFE • Full-pack package which can be installed to the heat sink with one screw 13.7±0.2 4.2±0.2 Solder Dip ■ Features Collector power dissipation 4.6±0.2 1.4±0.2 1.6±0.2 2.6±0.1 0.8±0.1 0.55±0.15 2.54±0.30 5.08±0.50 1 2 3 1: Base 2: Collector 3: Emitter TO-220D Full Pack Package Internal Connection 2 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C C B E ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit ICBO VCB = 60 V, IE = 0 1 mA ICEO VCE = 30 V, IB = 0 2 mA Emitter cutoff current IEBO VEB = 5 V, IC = 0 2 mA Collector to emitter voltage VCEO IC = 30 mA, IB = 0 60 Forward current transfer ratio hFE1 Collector cutoff current VCE = 4 V, IC = 1 A 1 000 * VCE = 4 V, IC = 2 A 2 000 VCE(sat) IC = 2 A, IB = 8 mA 2.5 V VBE VCE = 4 V, IC = 2 A 2.8 V hFE2 Collector to emitter saturation voltage Base to emitter voltage V 10 000 Transition frequency fT VCE = 10 V, IC = 0.5 A, f = 1 MHz 20 MHz Turn-on time ton IC = 2 A, IB1 = 8 mA, IB2 = −8 mA 0.5 µs Storage time tstg VCC = 50 V 4.0 µs Fall time tf 1.0 µs Note) *: Rank classification Rank hFE2 P Q 4 000 to 10 000 2 000 to 5 000 1