Data Sheet

PMT200EN
100 V N-channel Trench MOSFET
25 October 2012
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT223
(SC-73) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
1.2 Features and benefits
• Logic-level compatible
• Very fast switching
• Trench MOSFET technology
1.3 Applications
• Relay driver
• LED backlight driver
• Low-side loadswitch
• Switching circuits
1.4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
-
100
V
VGS
gate-source voltage
-20
-
20
V
ID
drain current
-
-
3.3
A
-
190
235
mΩ
VGS = 10 V; Tamb = 25 °C; t ≤ 5 s
[1]
Static characteristics
RDSon
drain-source on-state
resistance
[1]
VGS = 10 V; ID = 1.5 A; Tj = 25 °C
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
2
drain 6 cm .
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PMT200EN
NXP Semiconductors
100 V N-channel Trench MOSFET
2. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
1
G
gate
2
D
drain
3
S
source
4
D
drain
Simplified outline
Graphic symbol
D
4
G
1
2
3
S
SC-73 (SOT223)
017aaa253
3. Ordering information
Table 3.
Ordering information
Type number
Package
PMT200EN
Name
Description
Version
SC-73
plastic surface-mounted package with increased heatsink; 4
leads
SOT223
4. Marking
Table 4.
Marking codes
Type number
Marking code
PMT200EN
T200EN
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
100
V
VGS
gate-source voltage
-20
20
V
ID
drain current
VGS = 10 V; Tamb = 25 °C; t ≤ 5 s
[1]
-
3.3
A
VGS = 10 V; Tamb = 25 °C
[1]
-
1.8
A
VGS = 10 V; Tamb = 100 °C
[1]
-
1.1
A
-
13
A
[2]
-
800
mW
[1]
-
1700
mW
-
8300
mW
-55
150
°C
IDM
peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Ptot
total power dissipation
Tamb = 25 °C
Tsp = 25 °C
Tj
junction temperature
PMT200EN
Product data sheet
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PMT200EN
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100 V N-channel Trench MOSFET
Symbol
Parameter
Tamb
Tstg
Conditions
Min
Max
Unit
ambient temperature
-55
150
°C
storage temperature
-65
150
°C
-
1.6
A
Source-drain diode
IS
source current
Tamb = 25 °C
[1]
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
[2]
drain 6 cm .
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
2
017aaa123
120
Pder
(%)
Ider
(%)
80
80
40
40
0
- 75
Fig. 1.
017aaa124
120
- 25
25
75
125
Tj (°C)
0
- 75
175
Normalized total power dissipation as a
function of junction temperature
Fig. 2.
- 25
25
75
125
Tj (°C)
175
Normalized continuous drain current as a
function of junction temperature
aaa-005458
10
Limit RDSon = VDS/ID
ID
(A)
tp = 10 µs
1
tp = 100 µs
tp = 1 ms
DC; Tsp = 25 °C
10-1
10-2
10-1
tp = 10 ms
tp = 100 ms
DC; Tamb = 25 °C;
drain mounting pad 6 cm2
1
10
102
VDS (V)
103
IDM = single pulse
Fig. 3.
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage
PMT200EN
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PMT200EN
NXP Semiconductors
100 V N-channel Trench MOSFET
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
Rth(j-sp)
in free air; t ≤ 5 s
thermal resistance
from junction to solder
point
[1]
[2]
Min
Typ
Max
Unit
[1]
-
135
155
K/W
[2]
-
60
70
K/W
[2]
-
31
36
K/W
-
12
15
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm .
aaa-005459
103
Zth(j-a)
(K/W)
duty cycle = 1
102
0.75
0.33
0.2
0.5
0.25
0.1
10
0.05
0.01
1
10-3
0.02
0
10-2
10-1
1
10
102
tp (s)
103
FR4 PCB, standard footprint
Fig. 4.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMT200EN
Product data sheet
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PMT200EN
NXP Semiconductors
100 V N-channel Trench MOSFET
aaa-005460
102
duty cycle = 1
0.75
Zth(j-a)
(K/W)
0.5
0.33
0.25
10
0.2
0.1
0.05
0.02
0.01
0
1
10-3
10-2
10-1
FR4 PCB, mounting pad for drain 6 cm
Fig. 5.
1
102
10
103
tp (s)
2
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
100
-
-
V
VGSth
gate-source threshold
voltage
ID = 250 µA; VDS = VGS; Tj = 25 °C
1.3
1.7
2.5
V
IDSS
drain leakage current
VDS = 100 V; VGS = 0 V; Tj = 25 °C
-
-
1
µA
IGSS
gate leakage current
VGS = 20 V; VDS = 0 V; Tj = 25 °C
-
-
100
nA
VGS = -20 V; VDS = 0 V; Tj = 25 °C
-
-
-100
nA
VGS = 10 V; ID = 1.5 A; Tj = 25 °C
-
190
235
mΩ
VGS = 10 V; ID = 1.5 A; Tj = 150 °C
-
420
520
mΩ
VGS = 4.5 V; ID = 1 A; Tj = 25 °C
-
200
270
mΩ
VDS = 10 V; ID = 1.5 A; Tj = 25 °C
-
5
-
S
total gate charge
VDS = 80 V; ID = 1.5 A; VGS = 10 V;
-
7.4
10
nC
QGS
gate-source charge
Tj = 25 °C
-
0.7
-
nC
QGD
gate-drain charge
-
1.9
-
nC
Ciss
input capacitance
VDS = 80 V; f = 1 MHz; VGS = 0 V;
-
315
475
pF
Coss
output capacitance
Tj = 25 °C
-
35
-
pF
RDSon
gfs
drain-source on-state
resistance
forward
transconductance
Dynamic characteristics
QG(tot)
PMT200EN
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PMT200EN
NXP Semiconductors
100 V N-channel Trench MOSFET
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Crss
reverse transfer
capacitance
-
25
-
pF
td(on)
turn-on delay time
VDS = 50 V; ID = 1.5 A; VGS = 10 V;
-
4
-
ns
RG(ext) = 6 Ω; Tj = 25 °C
tr
rise time
-
5
-
ns
td(off)
turn-off delay time
-
11
-
ns
tf
fall time
-
3
-
ns
-
0.8
1.2
V
Source-drain diode
VSD
source-drain voltage
ID
(A)
IS = 1.6 A; VGS = 0 V; Tj = 25 °C
aaa-005461
7
10 V
4.5 V
6
aaa-005462
10-3
ID
(A)
3.3 V
5
10-4
4
min
3V
typ
max
3
10-5
2
2.7 V
1
0
Fig. 6.
VGS = 2.4 V
0
1
2
3
VDS (V)
10-6
4
0
1
2
VGS (V)
3
Tj = 25 °C
Tj = 25 °C; VDS = 5 V
Output characteristics: drain current as a
Fig. 7.
function of drain-source voltage; typical values
Subthreshold drain current as a function of
gate-source voltage
aaa-005463
800
2.6 V
RDSon
(mΩ)
2.8 V
3V
aaa-005464
1000
RDSon
(mΩ)
3.2 V
800
600
600
400
Tj = 150 °C
400
200
0
0
1
2
3
4
5
6
ID (A)
0
7
Tj = 25 °C
Fig. 8.
Product data sheet
0
2
4
6
8
10
VGS (V)
ID = 1.5 A
Drain-source on-state resistance as a function
of drain current; typical values
PMT200EN
Tj = 25 °C
200
3.5 V
4.5 V
VGS = 10 V
Fig. 9.
Drain-source on-state resistance as a function
of gate-source voltage; typical values
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PMT200EN
NXP Semiconductors
100 V N-channel Trench MOSFET
ID
(A)
aaa-005465
7
aaa-005466
2.5
a
6
2.0
5
1.5
4
3
1.0
2
Tj = 150 °C
Tj = 25 °C
0.5
1
0
0
1
2
3
VGS (V)
0.0
-60
4
VDS > ID × RDSon
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
aaa-005467
3
VGS(th)
(V)
0
60
120
180
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
aaa-005468
103
max
Tj (°C)
Ciss
C
(pF)
2
typ
Coss
102
1
0
-60
Crss
min
0
60
120
Tj (°C)
10
10-1
180
ID = 0.25 mA; VDS = VGS
Product data sheet
10
VDS (V)
102
f = 1 MHz; VGS = 0 V
Fig. 12. Gate-source threshold voltage as a function of
junction temperature
PMT200EN
1
Fig. 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
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PMT200EN
NXP Semiconductors
100 V N-channel Trench MOSFET
aaa-005469
10
VDS
VGS
(V)
ID
8
VGS(pl)
6
VGS(th)
VGS
4
QGS1
QGS2
QGS
2
QGD
QG(tot)
017aaa137
0
0
2
4
6
QG (nC)
Fig. 15. Gate charge waveform definitions
8
ID = 1.5 A; VDS = 80 V; Tamb = 25 °C
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
aaa-005470
3.5
IS
(A)
3.0
2.5
2.0
Tj = 150 °C
Tj = 25 °C
1.5
1.0
0.5
0
0.0
0.4
0.8
VSD (V)
1.2
VGS = 0 V
Fig. 16. Source current as a function of source-drain voltage; typical values
8. Test information
P
t2
duty cycle δ =
t1
t2
t1
t
006aaa812
Fig. 17. Duty cycle definition
PMT200EN
Product data sheet
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PMT200EN
NXP Semiconductors
100 V N-channel Trench MOSFET
9. Package outline
6.7
6.3
3.1
2.9
1.8
1.5
4
1.1
0.7
7.3
6.7
3.7
3.3
1
2
2.3
3
0.8
0.6
4.6
0.32
0.22
Dimensions in mm
04-11-10
Fig. 18. Package outline SC-73 (SOT223)
10. Soldering
7
3.85
3.6
3.5
0.3
1.3 1.2
(4×) (4×)
solder lands
4
solder resist
3.9
6.1 7.65
solder paste
occupied area
1
2
3
Dimensions in mm
2.3
2.3
1.2
(3×)
1.3
(3×)
6.15
sot223_fr
Fig. 19. Reflow soldering footprint for SC-73 (SOT223)
PMT200EN
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PMT200EN
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100 V N-channel Trench MOSFET
8.9
6.7
1.9
solder lands
4
solder resist
6.2
1
2
8.7
Dimensions in mm
3
preferred transport
direction during soldering
1.9
(3×)
2.7
occupied area
2.7
1.1
1.9
(2×)
sot223_fw
Fig. 20. Wave soldering footprint for SC-73 (SOT223)
11. Revision history
Table 8.
Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PMT200EN v.1
20121025
Product data sheet
-
-
PMT200EN
Product data sheet
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PMT200EN
NXP Semiconductors
100 V N-channel Trench MOSFET
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
12. Legal information
12.1 Data sheet status
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Definition
Please consult the most recently issued document before initiating or
completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nxp.com.
12.2 Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local NXP
Semiconductors sales office. In case of any inconsistency or conflict with the
short data sheet, the full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, NXP Semiconductors does not give
any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
PMT200EN
Product data sheet
Right to make changes — NXP Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their
applications and products using NXP Semiconductors products, and NXP
Semiconductors accepts no liability for any assistance with applications or
customer product design. It is customer’s sole responsibility to determine
whether the NXP Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as for the planned
application and use of customer’s third party customer(s). Customers should
provide appropriate design and operating safeguards to minimize the risks
associated with their applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
customer’s third party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications
and the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
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agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
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PMT200EN
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100 V N-channel Trench MOSFET
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor
tested in accordance with automotive testing or application requirements.
NXP Semiconductors accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards,
customer (a) shall use the product without NXP Semiconductors’ warranty
of the product for such automotive applications, use and specifications, and
(b) whenever customer uses the product for automotive applications beyond
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liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
12.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
PMT200EN
Product data sheet
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PMT200EN
NXP Semiconductors
100 V N-channel Trench MOSFET
13. Contents
1
1.1
1.2
1.3
1.4
Product profile ....................................................... 1
General description .............................................. 1
Features and benefits ...........................................1
Applications .......................................................... 1
Quick reference data ............................................ 1
2
Pinning information ............................................... 2
3
Ordering information ............................................. 2
4
Marking ................................................................... 2
5
Limiting values .......................................................2
6
Thermal characteristics .........................................4
7
Characteristics ....................................................... 5
8
Test information ..................................................... 8
9
Package outline ..................................................... 9
10
Soldering ................................................................ 9
11
Revision history ................................................... 10
12
12.1
12.2
12.3
12.4
Legal information .................................................11
Data sheet status ............................................... 11
Definitions ...........................................................11
Disclaimers .........................................................11
Trademarks ........................................................ 12
© NXP B.V. 2012. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 25 October 2012
PMT200EN
Product data sheet
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