SO T4 57 PMN30UNE 20 V, N-channel Trench MOSFET 29 January 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • • • • • Trench MOSFET technology Low threshold voltage Very fast switching Enhanced power dissipation capability of 1240 mW ElectroStatic Discharge (ESD) protection > 1 kV HBM 3. Applications • • • • LED driver Power management Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - 20 V VGS gate-source voltage -8 - 8 V ID drain current - - 6 A - 28 36 mΩ VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s [1] Static characteristics RDSon drain-source on-state resistance [1] VGS = 4.5 V; ID = 4.8 A; Tj = 25 °C 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm . Scan or click this QR code to view the latest information for this product PMN30UNE NXP Semiconductors 20 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 D drain 2 D drain 3 G gate 4 S source 5 D drain 6 D drain Simplified outline Graphic symbol 6 5 4 1 2 3 D G TSOP6 (SOT457) S 017aaa255 6. Ordering information Table 3. Ordering information Type number PMN30UNE Package Name Description Version TSOP6 plastic surface-mounted package (TSOP6); 6 leads SOT457 7. Marking Table 4. Marking codes Type number Marking code PMN30UNE G8 PMN30UNE Product data sheet All information provided in this document is subject to legal disclaimers. 29 January 2016 © NXP Semiconductors N.V. 2016. All rights reserved 2 / 16 PMN30UNE NXP Semiconductors 20 V, N-channel Trench MOSFET 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - 20 V VGS gate-source voltage -8 8 V ID drain current VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - 6 A VGS = 4.5 V; Tamb = 25 °C [1] - 4.8 A VGS = 4.5 V; Tamb = 100 °C [1] - 3 A - 19 A [2] - 530 mW [1] - 1.24 W - 4.46 W IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C Tsp = 25 °C Tj junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C - 1.2 A Source-drain diode IS source current [1] [2] Tamb = 25 °C 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm . Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 017aaa123 120 Pder (%) 017aaa124 120 Ider (%) 80 80 40 40 0 - 75 Fig. 1. [1] - 25 25 75 125 Tj (°C) Normalized total power dissipation as a function of junction temperature PMN30UNE Product data sheet 0 - 75 175 Fig. 2. - 25 75 125 Tj (°C) 175 Normalized continuous drain current as a function of junction temperature All information provided in this document is subject to legal disclaimers. 29 January 2016 25 © NXP Semiconductors N.V. 2016. All rights reserved 3 / 16 PMN30UNE NXP Semiconductors 20 V, N-channel Trench MOSFET aaa-020615 102 ID (A) tp = 10 µs Limit RDSon = VDS/ID 10 100 µs 1 1 ms 10 ms DC; Tsp = 25 °C 10-1 100 ms DC; Tamb = 25 °C; drain mounting pad 6 cm2 10-2 10-1 1 10 VDS (V) 102 IDM = single pulse Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage PMN30UNE Product data sheet All information provided in this document is subject to legal disclaimers. 29 January 2016 © NXP Semiconductors N.V. 2016. All rights reserved 4 / 16 PMN30UNE NXP Semiconductors 20 V, N-channel Trench MOSFET 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-sp) in free air; t ≤ 5 s thermal resistance from junction to solder point [1] [2] Min Typ Max Unit [1] - 205 235 K/W [2] - 88 101 K/W [2] - 55 63 K/W - 24 28 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. aaa-020616 103 Zth(j-a) (K/W) 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm . duty cycle = 1 102 0.5 0.25 0.1 10 0.75 0.33 0.2 0.05 0.02 0 1 10-3 0.01 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMN30UNE Product data sheet All information provided in this document is subject to legal disclaimers. 29 January 2016 © NXP Semiconductors N.V. 2016. All rights reserved 5 / 16 PMN30UNE NXP Semiconductors 20 V, N-channel Trench MOSFET aaa-020617 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.5 0.25 10 0.75 0.33 0.2 0.1 0.05 0 1 10- 3 0.02 0.01 10- 2 10- 1 FR4 PCB, mounting pad for drain 6 cm Fig. 5. 1 10 102 tp (s) 103 2 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMN30UNE Product data sheet All information provided in this document is subject to legal disclaimers. 29 January 2016 © NXP Semiconductors N.V. 2016. All rights reserved 6 / 16 PMN30UNE NXP Semiconductors 20 V, N-channel Trench MOSFET 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 20 - - V VGSth gate-source threshold voltage ID = 250 µA; VDS=VGS; Tj = 25 °C 0.4 0.65 0.9 V IDSS drain leakage current VDS = 20 V; VGS = 0 V; Tj = 25 °C - - 1 µA IGSS gate leakage current VGS = 8 V; VDS = 0 V; Tj = 25 °C - - 10 µA VGS = -8 V; VDS = 0 V; Tj = 25 °C - - -10 µA VGS = 4.5 V; VDS = 0 V; Tj = 25 °C - - 2 µA VGS = -4.5 V; VDS = 0 V; Tj = 25 °C - - -2 µA VGS = 2.5 V; VDS = 0 V; Tj = 25 °C - - 200 nA VGS = -2.5 V; VDS = 0 V; Tj = 25 °C - - -200 nA VGS = 4.5 V; ID = 4.8 A; Tj = 25 °C - 28 36 mΩ VGS = 4.5 V; ID = 4.8 A; Tj = 150 °C - 43 55 mΩ VGS = 2.5 V; ID = 4.2 A; Tj = 25 °C - 38 47 mΩ VGS = 1.8 V; ID = 0.9 A; Tj = 25 °C - 42 60 mΩ VGS = 1.5 V; ID = 0.1 A; Tj = 25 °C - 52 105 mΩ RDSon drain-source on-state resistance gfs forward transconductance VDS = 10 V; ID = 5 A; Tj = 25 °C - 19 - S RG gate resistance f = 1 MHz; Tj = 25 °C - 0.8 - Ω Dynamic characteristics QG(tot) total gate charge VDS = 10 V; ID = 4.8 A; VGS = 4.5 V; - 5.1 9 nC QGS gate-source charge Tj = 25 °C - 0.6 - nC QGD gate-drain charge - 0.9 - nC Ciss input capacitance VDS = 10 V; f = 1 MHz; VGS = 0 V; - 558 - pF Coss output capacitance Tj = 25 °C - 56 - pF Crss reverse transfer capacitance - 45 - pF td(on) turn-on delay time VDS = 10 V; ID = 4.8 A; VGS = 4.5 V; - 5.5 - ns tr rise time RG(ext) = 6 Ω; Tj = 25 °C - 24 - ns td(off) turn-off delay time - 22 - ns tf fall time - 6 - ns PMN30UNE Product data sheet All information provided in this document is subject to legal disclaimers. 29 January 2016 © NXP Semiconductors N.V. 2016. All rights reserved 7 / 16 PMN30UNE NXP Semiconductors 20 V, N-channel Trench MOSFET Symbol Parameter Conditions Min Typ Max Unit IS = 1.2 A; VGS = 0 V; Tj = 25 °C - 0.7 1.2 V Source-drain diode VSD source-drain voltage aaa-020618 20 4.5 V ID (A) VGS = 2 V 3V aaa-009131 10-3 2.5 V ID (A) 15 1.8 V min 10-4 typ max 10 1.5 V 10-5 5 1.2 V 0 Fig. 6. 0 1 2 3 10-6 4 VDS (V) 0 0.2 0.4 0.6 Tj = 25 °C Tj = 25 °C; VDS = 5 V Fig. 7. Output characteristics: drain current as a function of drain-source voltage; typical values Sub-threshold drain current as a function of gate-source voltage aaa-020619 0.20 1.2 V RDSon (Ω) 1.5 V RDSon (Ω) 0.15 0.10 0.10 2.5 V 3V 0.05 aaa-020620 0.20 1.8 V 0.15 2.2 V Tj = 150 °C 0.05 Tj = 25 °C VGS = 4.5 V 0 0 5 10 15 ID (A) 0 20 Tj = 25 °C Fig. 8. 0.8 1 VGS (V) Product data sheet 1 2 3 4 VGS (V) 5 ID = 4.5 A Drain-source on-state resistance as a function of drain current; typical values PMN30UNE 0 Fig. 9. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. 29 January 2016 © NXP Semiconductors N.V. 2016. All rights reserved 8 / 16 PMN30UNE NXP Semiconductors 20 V, N-channel Trench MOSFET aaa-020621 20 aaa-009135 2 a ID (A) 15 1.5 10 1 0.5 5 Tj = 150 °C 0 0 Tj = 25 °C 1 2 VGS (V) 0 -60 3 VDS > ID × RDSon Fig. 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values aaa-009136 1.5 0 60 120 Tj (°C) 180 Fig. 11. Normalized drain-source on-state resistance as a function of junction temperature; typical values aaa-020622 103 Ciss VGS(th) (V) C (pF) 1.0 Coss 102 max typ 0.5 Crss min 0 -60 0 60 120 Tj (°C) 10 10-1 180 ID = 0.25 mA; VDS = VGS Product data sheet 10 VDS (V) 102 f = 1 MHz; VGS = 0 V Fig. 12. Gate-source threshold voltage as a function of junction temperature PMN30UNE 1 Fig. 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. 29 January 2016 © NXP Semiconductors N.V. 2016. All rights reserved 9 / 16 PMN30UNE NXP Semiconductors 20 V, N-channel Trench MOSFET aaa-020623 5 VDS VGS (V) ID 4 VGS(pl) 3 VGS(th) VGS 2 QGS1 1 0 QGS2 0 2 4 QG (nC) QGS QGD QG(tot) 003aaa508 Fig. 15. MOSFET transistor: Gate charge waveform definitions 6 ID = 4.8 A; VDS = 10 V; Tamb = 25 °C Fig. 14. Gate-source voltage as a function of gate charge; typical values aaa-020624 5 IS (A) 4 3 Tj = 150 °C 2 Tj = 25 °C 1 0 0.0 0.4 0.8 VSD (V) 1.2 VGS = 0 V Fig. 16. Source current as a function of source-drain voltage; typical values 11. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig. 17. Duty cycle definition PMN30UNE Product data sheet All information provided in this document is subject to legal disclaimers. 29 January 2016 © NXP Semiconductors N.V. 2016. All rights reserved 10 / 16 PMN30UNE NXP Semiconductors 20 V, N-channel Trench MOSFET 12. Package outline 3.1 2.7 6 3.0 2.5 1.7 1.3 1.1 0.9 5 4 2 3 0.6 0.2 pin 1 index 1 0.95 1.9 0.40 0.25 Dimensions in mm 0.26 0.10 14-10-03 Fig. 18. Package outline TSOP6 (SOT457) 13. Soldering 3.45 1.95 0.45 0.55 (6×) (6×) 0.95 solder lands solder resist 3.3 2.825 0.95 solder paste occupied area 0.7 (6×) Dimensions in mm 0.8 (6×) 2.4 sot457_fr Fig. 19. Reflow soldering footprint for TSOP6 (SOT457) PMN30UNE Product data sheet All information provided in this document is subject to legal disclaimers. 29 January 2016 © NXP Semiconductors N.V. 2016. All rights reserved 11 / 16 PMN30UNE NXP Semiconductors 20 V, N-channel Trench MOSFET 5.3 1.5 (4×) 1.475 0.45 (2×) 5.05 1.475 solder lands solder resist occupied area Dimensions in mm preferred transport direction during soldering 1.45 (6×) 2.85 sot457_fw Fig. 20. Wave soldering footprint for TSOP6 (SOT457) PMN30UNE Product data sheet All information provided in this document is subject to legal disclaimers. 29 January 2016 © NXP Semiconductors N.V. 2016. All rights reserved 12 / 16 PMN30UNE NXP Semiconductors 20 V, N-channel Trench MOSFET 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PMN30UNE v.1 20160129 Product data sheet - - PMN30UNE Product data sheet All information provided in this document is subject to legal disclaimers. 29 January 2016 © NXP Semiconductors N.V. 2016. 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Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................3 9 Thermal characteristics .........................................5 10 Characteristics ....................................................... 7 11 Test information ................................................... 10 12 Package outline ................................................... 11 13 Soldering .............................................................. 11 14 Revision history ................................................... 13 15 15.1 15.2 15.3 15.4 Legal information .................................................14 Data sheet status ............................................... 14 Definitions ...........................................................14 Disclaimers .........................................................14 Trademarks ........................................................ 15 © NXP Semiconductors N.V. 2016. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 29 January 2016 PMN30UNE Product data sheet All information provided in this document is subject to legal disclaimers. 29 January 2016 © NXP Semiconductors N.V. 2016. All rights reserved 16 / 16