Data Sheet

SO
T3
23
PMF63UNE
20 V, N-channel Trench MOSFET
20 April 2016
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323
(SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
2. Features and benefits
•
•
•
Trench MOSFET technology
Low threshold voltage
ElectroStatic Discharge (ESD) protection > 2 kV HBM
3. Applications
•
•
•
•
LED driver
Power management
Low-side loadswitch
Switching circuits
4. Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
-
20
V
VGS
gate-source voltage
-8
-
8
V
ID
drain current
-
-
2.2
A
-
57
65
mΩ
VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s
[1]
Static characteristics
RDSon
drain-source on-state
resistance
[1]
VGS = 4.5 V; ID = 2 A; Tj = 25 °C
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm .
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PMF63UNE
NXP Semiconductors
20 V, N-channel Trench MOSFET
5. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
1
G
gate
2
S
souce
3
D
drain
Simplified outline
Graphic symbol
3
D
G
1
2
SC-70 (SOT323)
S
017aaa255
6. Ordering information
Table 3.
Ordering information
Type number
PMF63UNE
Package
Name
Description
Version
SC-70
plastic surface-mounted package; 3 leads
SOT323
7. Marking
Table 4.
Marking codes
Type number
Marking code
[1]
PMF63UNE
Z%V
[1]
PMF63UNE
Product data sheet
% = placeholder for manufacturing site code
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20 V, N-channel Trench MOSFET
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
20
V
VGS
gate-source voltage
-8
8
V
ID
drain current
VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s
[1]
-
2.2
A
VGS = 4.5 V; Tamb = 25 °C
[1]
-
2
A
VGS = 4.5 V; Tamb = 100 °C
[1]
-
1.3
A
-
8
A
[2]
-
300
mW
[1]
-
395
mW
-
1.8
W
IDM
peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Ptot
total power dissipation
Tamb = 25 °C
Tsp = 25 °C
Tj
junction temperature
-55
150
°C
Tamb
ambient temperature
-55
150
°C
Tstg
storage temperature
-65
150
°C
IS
source current
-
0.37
A
[1]
[2]
Tamb = 25 °C
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm .
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper; tin-plated and standard
footprint.
017aaa123
120
Pder
(%)
017aaa124
120
Ider
(%)
80
80
40
40
0
- 75
Fig. 1.
[1]
- 25
25
75
125
Tj (°C)
Normalized total power dissipation as a
function of junction temperature
PMF63UNE
Product data sheet
0
- 75
175
Fig. 2.
- 25
75
125
Tj (°C)
175
Normalized continuous drain current as a
function of junction temperature
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20 V, N-channel Trench MOSFET
aaa-022560
10
tp = 10 µs
Limit RDSon = VDS/ID
100 µs
ID
(A)
1 ms
1
10 ms
DC; Tsp = 25 °C
10-1
100 ms
DC; Tamb = 25 °C; 6 cm2
10-2
10-1
1
10
102
VDS (V)
IDM = single pulse
Fig. 3.
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage
9. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
Rth(j-sp)
in free air; t ≤ 5 s
thermal resistance
from junction to solder
point
[1]
[2]
PMF63UNE
Product data sheet
Min
Typ
Max
Unit
[1]
-
363
418
K/W
[2]
-
276
317
K/W
[2]
-
238
273
K/W
-
60
69
K/W
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper; tin-plated and standard
footprint.
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm .
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PMF63UNE
NXP Semiconductors
20 V, N-channel Trench MOSFET
aaa-022561
103
duty cycle = 1
Zth(j-a)
(K/W)
0.75
102
0.33
0.20
0.50
0.25
0.10
0.05
10
0.01
0.02
0
1
10-3
10-2
10-1
1
10
102
tp (s)
103
FR4 PCB, standard footprint
Fig. 4.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-022562
103
Zth(j-a)
(K/W)
duty cycle = 1
0.75
102
0.33
0.20
0.50
0.25
0.10
0.05
10
0.01
0.02
0
1
10-3
10-2
10-1
FR4 PCB, mounting pad for drain 6 cm
Fig. 5.
1
10
102
tp (s)
103
2
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMF63UNE
Product data sheet
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20 V, N-channel Trench MOSFET
10. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
20
-
-
V
VGSth
gate-source threshold
voltage
ID = 250 µA; VDS = VGS; Tj = 25 °C
0.45
0.7
1
V
IDSS
drain leakage current
VDS = 20 V; VGS = 0 V; Tj = 25 °C
-
-
1
µA
IGSS
gate leakage current
VGS = 8 V; Tj = 25 °C
-
-
10
µA
VGS = -8 V; VDS = 0 V; Tj = 25 °C
-
-
-10
µA
VGS = 4.5 V; VDS = 0 V; Tj = 25 °C
-
-
5
µA
VGS = -4.5 V; VDS = 0 V; Tj = 25 °C
-
-
-5
µA
VGS = 4.5 V; ID = 2 A; Tj = 25 °C
-
57
65
mΩ
VGS = 4.5 V; ID = 2 A; Tj = 150 °C
-
84
96
mΩ
VGS = 2.5 V; ID = 1.8 A; Tj = 25 °C
-
64
74
mΩ
VGS = 1.8 V; ID = 0.8 A; Tj = 25 °C
-
78
88
mΩ
RDSon
drain-source on-state
resistance
gfs
forward
transconductance
VDS = 5 V; ID = 2 A; Tj = 25 °C
-
9
-
S
RG
gate resistance
f = 1 MHz; Tj = 25 °C
-
1.8
-
Ω
total gate charge
VDS = 10 V; ID = 2 A; VGS = 4.5 V;
-
3.9
5.85
nC
QGS
gate-source charge
Tj = 25 °C
-
0.3
-
nC
QGD
gate-drain charge
-
0.9
-
nC
Ciss
input capacitance
VDS = 10 V; f = 1 MHz; VGS = 0 V;
-
289
-
pF
Coss
output capacitance
Tj = 25 °C
-
51
-
pF
Crss
reverse transfer
capacitance
-
42
-
pF
td(on)
turn-on delay time
VDS = 10 V; ID = 2 A; VGS = 4.5 V;
-
8
-
ns
tr
rise time
RG(ext) = 6 Ω; Tj = 25 °C
-
27
-
ns
td(off)
turn-off delay time
-
35
-
ns
tf
fall time
-
19
-
ns
-
0.7
1.2
V
Dynamic characteristics
QG(tot)
Source-drain diode
VSD
source-drain voltage
PMF63UNE
Product data sheet
IS = 0.37 A; VGS = 0 V; Tj = 25 °C
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20 V, N-channel Trench MOSFET
aaa-022563
8
ID
(A)
ID
(A)
4.5 V
2.5 V
1.8 V
6
aaa-022564
10-3
1.6 V
min
10-4
1.4 V
typ
max
4
VGS = 1.2 V
10-5
2
0
Fig. 6.
0
1
2
3
4
VDS (V)
10-6
5
0.3
Tj = 25 °C
VDS = 5 V
Output characteristics: drain current as a
function of drain-source voltage; typical values Fig. 7.
Tj = 25 °C
aaa-022565
240
RDSon
(mΩ)
200
1.2 V
1.4 V
1.6 V
0.9
1.2
1.5
VGS (V)
Sub-threshold drain current as a function of
gate-source voltage
aaa-022566
160
120
120
1.8 V
80
Tj = 150 °C
80
2.5 V
VGS = 4.5 V
40
0
0.6
240
RDSon
(mΩ)
200
160
0
2
4
6
ID (A)
0
8
Product data sheet
0
2
4
6
VGS (V)
8
ID = 2 A
Drain-source on-state resistance as a function
of drain current; typical values
PMF63UNE
Tj = 25 °C
40
Tj = 25 °C
Fig. 8.
0
Fig. 9.
Drain-source on-state resistance as a function
of gate-source voltage; typical values
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NXP Semiconductors
20 V, N-channel Trench MOSFET
aaa-022567
8
aaa-022568
1.6
ID
(A)
a
6
1.2
4
0.8
2
0.4
Tj = 150 °C
Tj = 25 °C
0
0
0.5
1
1.5
0
-60
2
2.5
VGS (V)
VDS > ID x RDSon
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
60
120
C
(pF)
102
typ
0.5
0
-60
min
0
Coss
Crss
60
120
Tj (°C)
10
10-1
180
ID = 250 μA; VDS = VGS
Product data sheet
1
10
VDS (V)
102
f = 1 MHz; VGS = 0 V
Fig. 12. Gate-source threshold voltage as a function of
ambient temperature
PMF63UNE
Ciss
max
1
180
aaa-022570
103
VGS(th)
(V)
Tj (°C)
Fig. 11. Normalized drain-source on-state resistance
as a function of ambient temperature; typical
values
aaa-022569
1.5
0
Fig. 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
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20 V, N-channel Trench MOSFET
aaa-022572
5
VDS
VGS
(V)
ID
4
VGS(pl)
3
VGS(th)
VGS
2
QGS1
1
0
QGS2
0
1
2
3
4
QG (nC)
QGS
QGD
QG(tot)
003aaa508
Fig. 15. Gate charge waveform definitions
5
VDS = 10 V; ID = 2 A
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
aaa-022573
1.5
IS
(A)
1.2
0.9
Tj = 150 ºC
Tj = 25 ºC
0.6
0.3
0
0
0.2
0.4
0.6
0.8
1.0
VSD (V)
VGS = 0 V
Fig. 16. Source current as a function of source-drain voltage; typical values
11. Test information
P
t2
duty cycle δ =
t1
t2
t1
t
006aaa812
Fig. 17. Duty cycle definition
PMF63UNE
Product data sheet
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20 V, N-channel Trench MOSFET
12. Package outline
Plastic surface-mounted package; 3 leads
SOT323
D
B
E
A
X
HE
y
v M A
3
Q
A
A1
1
c
2
e1
bp
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.8
0.1
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.23
0.13
0.2
0.2
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
SOT323
JEITA
SC-70
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
Fig. 18. Package outline SC-70 (SOT323)
PMF63UNE
Product data sheet
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20 V, N-channel Trench MOSFET
13. Soldering
2.65
1.85
1.325
solder lands
solder resist
2
2.35
0.6
(3×)
3
solder paste
1.3
occupied area
0.5
(3×)
1
Dimensions in mm
0.55
(3×)
sot323_fr
Fig. 19. Reflow soldering footprint for SC-70 (SOT323)
4.6
2.575
1.425
(3×)
solder lands
solder resist
occupied area
1.8
3.65 2.1
09
(2×)
Dimensions in mm
preferred transport
direction during soldering
sot323_fw
Fig. 20. Wave soldering footprint for SC-70 (SOT323)
PMF63UNE
Product data sheet
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20 V, N-channel Trench MOSFET
14. Revision history
Table 8.
Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PMF63UNE v.1
20160420
Product data sheet
-
-
PMF63UNE
Product data sheet
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20 V, N-channel Trench MOSFET
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punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
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Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Definition
Right to make changes — NXP Semiconductors reserves the right to
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limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Please consult the most recently issued document before initiating or
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The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
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Preview — The document is a preview version only. The document is still
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Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
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data sheet shall define the specification of the product as agreed between
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Limited warranty and liability — Information in this document is believed
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PMF63UNE
Product data sheet
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inclusion and/or use of NXP Semiconductors products in such equipment or
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Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
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and the products or of the application or use by customer’s third party
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
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20 V, N-channel Trench MOSFET
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In the event that customer uses the product for design-in and use in
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15.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Bitsound, CoolFlux, CoReUse, DESFire, FabKey, GreenChip,
HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, MIFARE,
MIFARE Plus, MIFARE Ultralight, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP
Semiconductors N.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
PMF63UNE
Product data sheet
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20 V, N-channel Trench MOSFET
16. Contents
1
General description ............................................... 1
2
Features and benefits ............................................1
3
Applications ........................................................... 1
4
Quick reference data ............................................. 1
5
Pinning information ............................................... 2
6
Ordering information ............................................. 2
7
Marking ................................................................... 2
8
Limiting values .......................................................3
9
Thermal characteristics .........................................4
10
Characteristics ....................................................... 6
11
Test information ..................................................... 9
12
Package outline ................................................... 10
13
Soldering .............................................................. 11
14
Revision history ................................................... 12
15
15.1
15.2
15.3
15.4
Legal information .................................................13
Data sheet status ............................................... 13
Definitions ...........................................................13
Disclaimers .........................................................13
Trademarks ........................................................ 14
© NXP Semiconductors N.V. 2016. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 20 April 2016
PMF63UNE
Product data sheet
All information provided in this document is subject to legal disclaimers.
20 April 2016
© NXP Semiconductors N.V. 2016. All rights reserved
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