SO T3 23 PMF63UNE 20 V, N-channel Trench MOSFET 20 April 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • • • Trench MOSFET technology Low threshold voltage ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications • • • • LED driver Power management Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - 20 V VGS gate-source voltage -8 - 8 V ID drain current - - 2.2 A - 57 65 mΩ VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s [1] Static characteristics RDSon drain-source on-state resistance [1] VGS = 4.5 V; ID = 2 A; Tj = 25 °C 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm . Scan or click this QR code to view the latest information for this product PMF63UNE NXP Semiconductors 20 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S souce 3 D drain Simplified outline Graphic symbol 3 D G 1 2 SC-70 (SOT323) S 017aaa255 6. Ordering information Table 3. Ordering information Type number PMF63UNE Package Name Description Version SC-70 plastic surface-mounted package; 3 leads SOT323 7. Marking Table 4. Marking codes Type number Marking code [1] PMF63UNE Z%V [1] PMF63UNE Product data sheet % = placeholder for manufacturing site code All information provided in this document is subject to legal disclaimers. 20 April 2016 © NXP Semiconductors N.V. 2016. All rights reserved 2 / 15 PMF63UNE NXP Semiconductors 20 V, N-channel Trench MOSFET 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - 20 V VGS gate-source voltage -8 8 V ID drain current VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - 2.2 A VGS = 4.5 V; Tamb = 25 °C [1] - 2 A VGS = 4.5 V; Tamb = 100 °C [1] - 1.3 A - 8 A [2] - 300 mW [1] - 395 mW - 1.8 W IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C Tsp = 25 °C Tj junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C IS source current - 0.37 A [1] [2] Tamb = 25 °C 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm . Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper; tin-plated and standard footprint. 017aaa123 120 Pder (%) 017aaa124 120 Ider (%) 80 80 40 40 0 - 75 Fig. 1. [1] - 25 25 75 125 Tj (°C) Normalized total power dissipation as a function of junction temperature PMF63UNE Product data sheet 0 - 75 175 Fig. 2. - 25 75 125 Tj (°C) 175 Normalized continuous drain current as a function of junction temperature All information provided in this document is subject to legal disclaimers. 20 April 2016 25 © NXP Semiconductors N.V. 2016. All rights reserved 3 / 15 PMF63UNE NXP Semiconductors 20 V, N-channel Trench MOSFET aaa-022560 10 tp = 10 µs Limit RDSon = VDS/ID 100 µs ID (A) 1 ms 1 10 ms DC; Tsp = 25 °C 10-1 100 ms DC; Tamb = 25 °C; 6 cm2 10-2 10-1 1 10 102 VDS (V) IDM = single pulse Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-sp) in free air; t ≤ 5 s thermal resistance from junction to solder point [1] [2] PMF63UNE Product data sheet Min Typ Max Unit [1] - 363 418 K/W [2] - 276 317 K/W [2] - 238 273 K/W - 60 69 K/W Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper; tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm . All information provided in this document is subject to legal disclaimers. 20 April 2016 © NXP Semiconductors N.V. 2016. All rights reserved 4 / 15 PMF63UNE NXP Semiconductors 20 V, N-channel Trench MOSFET aaa-022561 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 102 0.33 0.20 0.50 0.25 0.10 0.05 10 0.01 0.02 0 1 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values aaa-022562 103 Zth(j-a) (K/W) duty cycle = 1 0.75 102 0.33 0.20 0.50 0.25 0.10 0.05 10 0.01 0.02 0 1 10-3 10-2 10-1 FR4 PCB, mounting pad for drain 6 cm Fig. 5. 1 10 102 tp (s) 103 2 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMF63UNE Product data sheet All information provided in this document is subject to legal disclaimers. 20 April 2016 © NXP Semiconductors N.V. 2016. All rights reserved 5 / 15 PMF63UNE NXP Semiconductors 20 V, N-channel Trench MOSFET 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 20 - - V VGSth gate-source threshold voltage ID = 250 µA; VDS = VGS; Tj = 25 °C 0.45 0.7 1 V IDSS drain leakage current VDS = 20 V; VGS = 0 V; Tj = 25 °C - - 1 µA IGSS gate leakage current VGS = 8 V; Tj = 25 °C - - 10 µA VGS = -8 V; VDS = 0 V; Tj = 25 °C - - -10 µA VGS = 4.5 V; VDS = 0 V; Tj = 25 °C - - 5 µA VGS = -4.5 V; VDS = 0 V; Tj = 25 °C - - -5 µA VGS = 4.5 V; ID = 2 A; Tj = 25 °C - 57 65 mΩ VGS = 4.5 V; ID = 2 A; Tj = 150 °C - 84 96 mΩ VGS = 2.5 V; ID = 1.8 A; Tj = 25 °C - 64 74 mΩ VGS = 1.8 V; ID = 0.8 A; Tj = 25 °C - 78 88 mΩ RDSon drain-source on-state resistance gfs forward transconductance VDS = 5 V; ID = 2 A; Tj = 25 °C - 9 - S RG gate resistance f = 1 MHz; Tj = 25 °C - 1.8 - Ω total gate charge VDS = 10 V; ID = 2 A; VGS = 4.5 V; - 3.9 5.85 nC QGS gate-source charge Tj = 25 °C - 0.3 - nC QGD gate-drain charge - 0.9 - nC Ciss input capacitance VDS = 10 V; f = 1 MHz; VGS = 0 V; - 289 - pF Coss output capacitance Tj = 25 °C - 51 - pF Crss reverse transfer capacitance - 42 - pF td(on) turn-on delay time VDS = 10 V; ID = 2 A; VGS = 4.5 V; - 8 - ns tr rise time RG(ext) = 6 Ω; Tj = 25 °C - 27 - ns td(off) turn-off delay time - 35 - ns tf fall time - 19 - ns - 0.7 1.2 V Dynamic characteristics QG(tot) Source-drain diode VSD source-drain voltage PMF63UNE Product data sheet IS = 0.37 A; VGS = 0 V; Tj = 25 °C All information provided in this document is subject to legal disclaimers. 20 April 2016 © NXP Semiconductors N.V. 2016. All rights reserved 6 / 15 PMF63UNE NXP Semiconductors 20 V, N-channel Trench MOSFET aaa-022563 8 ID (A) ID (A) 4.5 V 2.5 V 1.8 V 6 aaa-022564 10-3 1.6 V min 10-4 1.4 V typ max 4 VGS = 1.2 V 10-5 2 0 Fig. 6. 0 1 2 3 4 VDS (V) 10-6 5 0.3 Tj = 25 °C VDS = 5 V Output characteristics: drain current as a function of drain-source voltage; typical values Fig. 7. Tj = 25 °C aaa-022565 240 RDSon (mΩ) 200 1.2 V 1.4 V 1.6 V 0.9 1.2 1.5 VGS (V) Sub-threshold drain current as a function of gate-source voltage aaa-022566 160 120 120 1.8 V 80 Tj = 150 °C 80 2.5 V VGS = 4.5 V 40 0 0.6 240 RDSon (mΩ) 200 160 0 2 4 6 ID (A) 0 8 Product data sheet 0 2 4 6 VGS (V) 8 ID = 2 A Drain-source on-state resistance as a function of drain current; typical values PMF63UNE Tj = 25 °C 40 Tj = 25 °C Fig. 8. 0 Fig. 9. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. 20 April 2016 © NXP Semiconductors N.V. 2016. All rights reserved 7 / 15 PMF63UNE NXP Semiconductors 20 V, N-channel Trench MOSFET aaa-022567 8 aaa-022568 1.6 ID (A) a 6 1.2 4 0.8 2 0.4 Tj = 150 °C Tj = 25 °C 0 0 0.5 1 1.5 0 -60 2 2.5 VGS (V) VDS > ID x RDSon Fig. 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values 60 120 C (pF) 102 typ 0.5 0 -60 min 0 Coss Crss 60 120 Tj (°C) 10 10-1 180 ID = 250 μA; VDS = VGS Product data sheet 1 10 VDS (V) 102 f = 1 MHz; VGS = 0 V Fig. 12. Gate-source threshold voltage as a function of ambient temperature PMF63UNE Ciss max 1 180 aaa-022570 103 VGS(th) (V) Tj (°C) Fig. 11. Normalized drain-source on-state resistance as a function of ambient temperature; typical values aaa-022569 1.5 0 Fig. 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. 20 April 2016 © NXP Semiconductors N.V. 2016. All rights reserved 8 / 15 PMF63UNE NXP Semiconductors 20 V, N-channel Trench MOSFET aaa-022572 5 VDS VGS (V) ID 4 VGS(pl) 3 VGS(th) VGS 2 QGS1 1 0 QGS2 0 1 2 3 4 QG (nC) QGS QGD QG(tot) 003aaa508 Fig. 15. Gate charge waveform definitions 5 VDS = 10 V; ID = 2 A Fig. 14. Gate-source voltage as a function of gate charge; typical values aaa-022573 1.5 IS (A) 1.2 0.9 Tj = 150 ºC Tj = 25 ºC 0.6 0.3 0 0 0.2 0.4 0.6 0.8 1.0 VSD (V) VGS = 0 V Fig. 16. Source current as a function of source-drain voltage; typical values 11. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig. 17. Duty cycle definition PMF63UNE Product data sheet All information provided in this document is subject to legal disclaimers. 20 April 2016 © NXP Semiconductors N.V. 2016. All rights reserved 9 / 15 PMF63UNE NXP Semiconductors 20 V, N-channel Trench MOSFET 12. Package outline Plastic surface-mounted package; 3 leads SOT323 D B E A X HE y v M A 3 Q A A1 1 c 2 e1 bp Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w mm 1.1 0.8 0.1 0.4 0.3 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.23 0.13 0.2 0.2 OUTLINE VERSION REFERENCES IEC JEDEC SOT323 JEITA SC-70 EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 Fig. 18. Package outline SC-70 (SOT323) PMF63UNE Product data sheet All information provided in this document is subject to legal disclaimers. 20 April 2016 © NXP Semiconductors N.V. 2016. All rights reserved 10 / 15 PMF63UNE NXP Semiconductors 20 V, N-channel Trench MOSFET 13. Soldering 2.65 1.85 1.325 solder lands solder resist 2 2.35 0.6 (3×) 3 solder paste 1.3 occupied area 0.5 (3×) 1 Dimensions in mm 0.55 (3×) sot323_fr Fig. 19. Reflow soldering footprint for SC-70 (SOT323) 4.6 2.575 1.425 (3×) solder lands solder resist occupied area 1.8 3.65 2.1 09 (2×) Dimensions in mm preferred transport direction during soldering sot323_fw Fig. 20. Wave soldering footprint for SC-70 (SOT323) PMF63UNE Product data sheet All information provided in this document is subject to legal disclaimers. 20 April 2016 © NXP Semiconductors N.V. 2016. All rights reserved 11 / 15 PMF63UNE NXP Semiconductors 20 V, N-channel Trench MOSFET 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PMF63UNE v.1 20160420 Product data sheet - - PMF63UNE Product data sheet All information provided in this document is subject to legal disclaimers. 20 April 2016 © NXP Semiconductors N.V. 2016. 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Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................3 9 Thermal characteristics .........................................4 10 Characteristics ....................................................... 6 11 Test information ..................................................... 9 12 Package outline ................................................... 10 13 Soldering .............................................................. 11 14 Revision history ................................................... 12 15 15.1 15.2 15.3 15.4 Legal information .................................................13 Data sheet status ............................................... 13 Definitions ...........................................................13 Disclaimers .........................................................13 Trademarks ........................................................ 14 © NXP Semiconductors N.V. 2016. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 20 April 2016 PMF63UNE Product data sheet All information provided in this document is subject to legal disclaimers. 20 April 2016 © NXP Semiconductors N.V. 2016. All rights reserved 15 / 15