SO T4 16 NX3020NAKT 30 V, 180 mA N-channel Trench MOSFET 29 October 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • • • • Very fast switching Trench MOSFET technology ESD protection Low threshold voltage 3. Applications • • • • Relay driver High-speed line driver Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - 30 V VGS gate-source voltage -20 - 20 V ID drain current - - 180 mA - 2.7 4.5 Ω VGS = 10 V; Tamb = 25 °C [1] Static characteristics RDSon drain-source on-state resistance [1] VGS = 10 V; ID = 100 mA; Tj = 25 °C 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm . Scan or click this QR code to view the latest information for this product NX3020NAKT NXP Semiconductors 30 V, 180 mA N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline Graphic symbol D 3 1 2 G SC-75 (SOT416) S 017aaa255 6. Ordering information Table 3. Ordering information Type number Package NX3020NAKT Name Description Version SC-75 plastic surface-mounted package; 3 leads SOT416 7. Marking Table 4. Marking codes Type number Marking code NX3020NAKT VB 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - 30 V VGS gate-source voltage -20 20 V ID drain current VGS = 10 V; Tamb = 25 °C [1] - 180 mA VGS = 10 V; Tamb = 100 °C [1] - 110 mA - 720 mA [2] - 230 mW [1] - 285 mW - 1060 mW -55 150 °C IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C Tsp = 25 °C Tj junction temperature NX3020NAKT Product data sheet All information provided in this document is subject to legal disclaimers. 29 October 2013 © NXP N.V. 2013. All rights reserved 2 / 13 NX3020NAKT NXP Semiconductors 30 V, 180 mA N-channel Trench MOSFET Symbol Parameter Tamb Tstg Conditions Min Max Unit ambient temperature -55 150 °C storage temperature -65 150 °C - 180 mA Source-drain diode IS source current [1] [2] Tamb = 25 °C [1] 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm . Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 017aaa001 120 Pder (%) Ider (%) 80 80 40 40 0 - 75 Fig. 1. 017aaa002 120 - 25 25 75 0 - 75 125 175 Tamb (°C) Normalized total power dissipation as a function of ambient temperature Fig. 2. - 25 25 75 125 175 Tamb (°C) Normalized continuous drain current as a function of ambient temperature 017aaa679 1 Limit RDSon = VDS/ID ID (A) tp = 100 µs tp = 1 ms 10-1 tp = 10 ms tp = 100 ms 10-2 DC; Tsp = 25 °C DC; Tamb = 25 °C; drain mounting pad 1 cm2 10-3 10-1 1 10 VDS (V) 102 IDM = single pulse Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage NX3020NAKT Product data sheet All information provided in this document is subject to legal disclaimers. 29 October 2013 © NXP N.V. 2013. All rights reserved 3 / 13 NX3020NAKT NXP Semiconductors 30 V, 180 mA N-channel Trench MOSFET 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-sp) thermal resistance from junction to solder point [1] [2] Min Typ Max Unit [1] - 460 530 K/W [2] - 370 430 K/W - - 115 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm . 017aaa680 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 0.33 102 0.2 0.25 0.1 0.05 0.02 0.01 0 10 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa681 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 102 0.33 0.2 0.5 0.25 0.1 0.05 0.02 0 10 10-3 0.01 10-2 10-1 FR4 PCB, mounting pad for drain 1 cm Fig. 5. 1 10 102 tp (s) 103 2 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values NX3020NAKT Product data sheet All information provided in this document is subject to legal disclaimers. 29 October 2013 © NXP N.V. 2013. All rights reserved 4 / 13 NX3020NAKT NXP Semiconductors 30 V, 180 mA N-channel Trench MOSFET 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 30 - - V VGSth gate-source threshold voltage ID = 250 µA; VDS = VGS; Tj = 25 °C 0.8 1.2 1.5 V IDSS drain leakage current VDS = 30 V; VGS = 0 V; Tj = 25 °C - - 1 µA VDS = 30 V; VGS = 0 V; Tj = 150 °C - - 10 µA VGS = 20 V; VDS = 0 V; Tj = 25 °C - - 3.5 µA VGS = -20 V; VDS = 0 V; Tj = 25 °C - - 3.5 µA VGS = 10 V; VDS = 0 V; Tj = 25 °C - - 1 µA VGS = -10 V; VDS = 0 V; Tj = 25 °C - - 1 µA VGS = 4.5 V; VDS = 0 V; Tj = 25 °C - - 0.5 µA VGS = -4.5 V; VDS = 0 V; Tj = 25 °C - - 0.5 µA VGS = 10 V; ID = 100 mA; Tj = 25 °C - 2.7 4.5 Ω VGS = 10 V; ID = 100 mA; Tj = 150 °C - 5.5 9.2 Ω VGS = 4.5 V; ID = 100 mA; Tj = 25 °C - 3 5.2 Ω VGS = 2.5 V; ID = 10 mA; Tj = 25 °C - 4 13 Ω VDS = 10 V; ID = 150 mA; Tj = 25 °C - 320 - S total gate charge VDS = 15 V; ID = 150 mA; VGS = 4.5 V; - 0.34 0.44 nC QGS gate-source charge Tj = 25 °C - 0.11 - nC QGD gate-drain charge - 0.06 - nC Ciss input capacitance VDS = 10 V; f = 1 MHz; VGS = 0 V; - 13 20 pF Coss output capacitance Tj = 25 °C - 2.6 - pF Crss reverse transfer capacitance - 1.1 - pF td(on) turn-on delay time VDS = 20 V; RL = 250 Ω; VGS = 10 V; - 5 10 ns tr rise time RG(ext) = 6 Ω; Tj = 25 °C - 5 - ns td(off) turn-off delay time - 34 68 ns tf fall time - 17 - ns 0.47 0.7 1.2 V IGSS RDSon gfs gate leakage current drain-source on-state resistance forward transconductance Dynamic characteristics QG(tot) Source-drain diode VSD source-drain voltage NX3020NAKT Product data sheet IS = 115 mA; VGS = 0 V; Tj = 25 °C All information provided in this document is subject to legal disclaimers. 29 October 2013 © NXP N.V. 2013. All rights reserved 5 / 13 NX3020NAKT NXP Semiconductors 30 V, 180 mA N-channel Trench MOSFET 017aaa663 0.5 10 V 4.5 V ID (A) 0.4 017aaa664 10-3 3.5 V ID (A) 3V 10-4 0.3 min typ max 2.5 V 0.2 10-5 0.1 0 Fig. 6. VGS = 2 V 0 1 2 3 10-6 4 VDS (V) 0 0.5 1.0 1.5 VGS (V) 2.0 Tj = 25 °C Tj = 25 °C; VDS = 5 V Output characteristics: drain current as a Fig. 7. function of drain-source voltage; typical values Sub-threshold drain current as a function of gate-source voltage 017aaa665 10 2V RDSon (Ω) 2.5 V 017aaa666 12 3V RDSon (Ω) 8 8 6 4.5 V 4 VGS = 10 V 2 0 Tj = 150 °C 3.5 V 4 Tj = 25 °C 0 0.1 0.2 0.3 0.4 ID (A) 0 0.5 Tj = 25 °C Fig. 8. Product data sheet 2 4 6 8 10 VGS (V) ID = 0.15 A Drain-source on-state resistance as a function of drain current; typical values NX3020NAKT 0 Fig. 9. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. 29 October 2013 © NXP N.V. 2013. All rights reserved 6 / 13 NX3020NAKT NXP Semiconductors 30 V, 180 mA N-channel Trench MOSFET 017aaa667 0.4 017aaa668 2.5 a ID (A) 2.0 0.3 1.5 0.2 1.0 0.1 Tj = 150 °C 0 0 0.5 Tj = 25 °C 1 2 3 VGS (V) 0 -60 4 VDS > ID × RDSon Fig. 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values 017aaa669 2.0 0 60 120 017aaa670 C (pF) 1.5 180 Fig. 11. Normalized drain-source on-state resistance as a function of junction temperature; typical values 102 VGS(th) (V) Tj (°C) Ciss max 10 typ 1.0 Coss min 1 0.5 0 -60 Crss 0 60 120 Tj (°C) 10-1 10-1 180 Fig. 12. Gate-source threshold voltage as a function of junction temperature Product data sheet 10 VDS (V) 102 f = 1 MHz; VGS = 0 V ID = 0.25 mA; VDS = VGS NX3020NAKT 1 Fig. 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. 29 October 2013 © NXP N.V. 2013. All rights reserved 7 / 13 NX3020NAKT NXP Semiconductors 30 V, 180 mA N-channel Trench MOSFET 017aaa671 10 VDS VGS (V) ID 8 VGS(pl) 6 VGS(th) VGS 4 QGS1 QGS2 QGS 2 QGD QG(tot) 017aaa137 0 0 0.2 0.4 0.6 QG (nC) Fig. 15. Gate charge waveform definitions 0.8 ID = 0.15 A; VDS = 15 V; Tamb = 25 °C Fig. 14. Gate-source voltage as a function of gate charge; typical values 017aaa672 0.5 IS (A) 0.4 0.3 0.2 0.1 0 Tj = 150 °C 0 0.4 Tj = 25 °C 0.8 VSD (V) 1.2 VGS = 0 V Fig. 16. Source current as a function of source-drain voltage; typical values 11. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig. 17. Duty cycle definition NX3020NAKT Product data sheet All information provided in this document is subject to legal disclaimers. 29 October 2013 © NXP N.V. 2013. All rights reserved 8 / 13 NX3020NAKT NXP Semiconductors 30 V, 180 mA N-channel Trench MOSFET 12. Package outline 0.95 0.60 1.8 1.4 3 0.45 0.15 1.75 0.9 1.45 0.7 1 2 0.30 0.15 1 0.25 0.10 Dimensions in mm 04-11-04 Fig. 18. Package outline SC-75 (SOT416) 13. Soldering 2.2 1.7 solder lands solder resist 1 0.85 2 solder paste 0.5 (3×) occupied area Dimensions in mm 0.6 (3×) 1.3 sot416_fr Fig. 19. Reflow soldering footprint for SC-75 (SOT416) NX3020NAKT Product data sheet All information provided in this document is subject to legal disclaimers. 29 October 2013 © NXP N.V. 2013. All rights reserved 9 / 13 NX3020NAKT NXP Semiconductors 30 V, 180 mA N-channel Trench MOSFET 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes NX3020NAKT v.2 20131029 Product data sheet - NX3020NAKT v.1 Modifications: • • • NX3020NAKT v.1 20120830 NX3020NAKT Product data sheet 3D package outline added Table 7 values of capacitance parameters corrected Figure 13 corrected Product data sheet - All information provided in this document is subject to legal disclaimers. 29 October 2013 - © NXP N.V. 2013. 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Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................2 9 Thermal characteristics .........................................4 10 Characteristics ....................................................... 5 11 Test information ..................................................... 8 12 Package outline ..................................................... 9 13 Soldering ................................................................ 9 14 Revision history ................................................... 10 15 15.1 15.2 15.3 15.4 Legal information .................................................11 Data sheet status ............................................... 11 Definitions ...........................................................11 Disclaimers .........................................................11 Trademarks ........................................................ 12 © NXP N.V. 2013. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 29 October 2013 NX3020NAKT Product data sheet All information provided in this document is subject to legal disclaimers. 29 October 2013 © NXP N.V. 2013. All rights reserved 13 / 13