SO T2 3 PMV42ENE 30 V, N-channel Trench MOSFET 16 March 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • • • • • Logic level compatible Low on-state resistance Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 1 kV HBM Enhanced power dissipation capability of 1 W 3. Applications • • • • Relay driver High-speed line driver Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - 30 V VGS gate-source voltage -20 - 20 V ID drain current - - 5.1 A - 29 36 mΩ VGS = 10 V; Tamb = 25 °C; t ≤ 5 s [1] Static characteristics RDSon drain-source on-state resistance [1] VGS = 10 V; ID = 4.4 A; Tj = 25 °C 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm . Scan or click this QR code to view the latest information for this product PMV42ENE NXP Semiconductors 30 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline Graphic symbol 3 D G 1 2 TO-236AB (SOT23) S 017aaa255 6. Ordering information Table 3. Ordering information Type number PMV42ENE Package Name Description Version TO-236AB plastic surface-mounted package; 3 leads SOT23 7. Marking Table 4. Marking codes Type number Marking code [1] PMV42ENE BL% [1] PMV42ENE Product data sheet % = placeholder for manufacturing site code All information provided in this document is subject to legal disclaimers. 16 March 2016 © NXP Semiconductors N.V. 2016. All rights reserved 2 / 17 PMV42ENE NXP Semiconductors 30 V, N-channel Trench MOSFET 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - 30 V VGS gate-source voltage -20 20 V ID drain current VGS = 10 V; Tamb = 25 °C; t ≤ 5 s [1] - 5.1 A VGS = 10 V; Tamb = 25 °C [1] - 4.4 A VGS = 10 V; Tamb = 100 °C [1] - 2.7 A - 18 A [2] - 500 mW [1] - 1.04 W - 5 W IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C Tsp = 25 °C Tj junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C - 1 A Source-drain diode IS source current [1] [2] Tamb = 25 °C 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm . Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 017aaa123 120 Pder (%) 017aaa124 120 Ider (%) 80 80 40 40 0 - 75 Fig. 1. [1] - 25 25 75 125 Tj (°C) Normalized total power dissipation as a function of junction temperature PMV42ENE Product data sheet 0 - 75 175 Fig. 2. - 25 75 125 Tj (°C) 175 Normalized continuous drain current as a function of junction temperature All information provided in this document is subject to legal disclaimers. 16 March 2016 25 © NXP Semiconductors N.V. 2016. All rights reserved 3 / 17 PMV42ENE NXP Semiconductors 30 V, N-channel Trench MOSFET aaa-022064 102 ID (A) tp = 10 µs Limit RDSon = VDS/ID 10 100 µs 1 1 ms 10 ms DC; Tsp = 25 °C 10-1 10-2 10-1 Fig. 3. 100 ms DC; Tamb = 25 °C; drain mounting pad 6 cm2 1 10 VDS (V) 102 Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage PMV42ENE Product data sheet All information provided in this document is subject to legal disclaimers. 16 March 2016 © NXP Semiconductors N.V. 2016. All rights reserved 4 / 17 PMV42ENE NXP Semiconductors 30 V, N-channel Trench MOSFET 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-sp) in free air; t ≤ 5 s thermal resistance from junction to solder point [1] [2] Min Typ Max Unit [1] - 218 250 K/W [2] - 105 120 K/W [2] - 72 83 K/W - 20 25 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. aaa-022065 103 Zth(j-a) (K/W) 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm . duty cycle = 1 102 0.5 0.25 0.1 10 0.75 0.33 0.2 0.05 0.02 0 1 10-3 0.01 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMV42ENE Product data sheet All information provided in this document is subject to legal disclaimers. 16 March 2016 © NXP Semiconductors N.V. 2016. All rights reserved 5 / 17 PMV42ENE NXP Semiconductors 30 V, N-channel Trench MOSFET aaa-022066 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.5 0.25 10 0.1 0.05 0 1 10-3 0.75 0.33 0.2 0.02 0.01 10-2 10-1 FR4 PCB, mounting pad for drain 6 cm Fig. 5. 1 10 102 tp (s) 103 2 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMV42ENE Product data sheet All information provided in this document is subject to legal disclaimers. 16 March 2016 © NXP Semiconductors N.V. 2016. All rights reserved 6 / 17 PMV42ENE NXP Semiconductors 30 V, N-channel Trench MOSFET 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 30 - - V VGSth gate-source threshold voltage ID = 250 µA; VDS=VGS; Tj = 25 °C 1 1.4 2 V IDSS drain leakage current VDS = 30 V; VGS = 0 V; Tj = 25 °C - - 1 µA IGSS gate leakage current VGS = 16 V; VDS = 0 V; Tj = 25 °C - - 10 µA VGS = -16 V; VDS = 0 V; Tj = 25 °C - - -10 µA VGS = 4.5 V; VDS = 0 V; Tj = 25 °C - - 100 nA VGS = -4.5 V; VDS = 0 V; Tj = 25 °C - - -100 nA VGS = 10 V; ID = 4.4 A; Tj = 25 °C - 29 36 mΩ VGS = 10 V; ID = 4.4 A; Tj = 150 °C - 46 57 mΩ VGS = 4.5 V; ID = 3.5 A; Tj = 25 °C - 42 54 mΩ RDSon drain-source on-state resistance gfs forward transconductance VDS = 10 V; ID = 4.4 A; Tj = 25 °C - 7 - S RG gate resistance f = 1 MHz; Tj = 25 °C - 1.5 - Ω Dynamic characteristics QG(tot) total gate charge VDS = 15 V; ID = 4.4 A; VGS = 10 V; - 5.5 9 nC QGS gate-source charge Tj = 25 °C - 0.8 - nC QGD gate-drain charge - 1.1 - nC Ciss input capacitance VDS = 15 V; f = 1 MHz; VGS = 0 V; - 281 - pF Coss output capacitance Tj = 25 °C - 42 - pF Crss reverse transfer capacitance - 32 - pF td(on) turn-on delay time VDS = 15 V; ID = 4.4 A; VGS = 10 V; - 5 - ns tr rise time RG(ext) = 6 Ω; Tj = 25 °C - 18 - ns td(off) turn-off delay time - 9 - ns tf fall time - 3 - ns - 0.8 1.2 V Source-drain diode VSD source-drain voltage PMV42ENE Product data sheet IS = 1 A; VGS = 0 V; Tj = 25 °C All information provided in this document is subject to legal disclaimers. 16 March 2016 © NXP Semiconductors N.V. 2016. All rights reserved 7 / 17 PMV42ENE NXP Semiconductors 30 V, N-channel Trench MOSFET aaa-020810 20 ID (A) aaa-021517 10-3 VGS = 4.5 V ID (A) 4V 15 10-4 3.5 V 10 min typ max 10-5 3V 5 2.5 V 0 Fig. 6. 0 1 2 3 4 VDS (V) 10-6 5 0 0.5 1.0 1.5 2.0 2.5 VGS (V) Tj = 25 °C Tj = 25 °C; VDS = 5 V Output characteristics: drain current as a Fig. 7. function of drain-source voltage; typical values Sub-threshold drain current as a function of gate-source voltage aaa-020812 0.4 2.5 V RDSon (Ω) 3V 2.8 V 0.3 3.5 V aaa-020813 0.6 3.3 V RDSon (Ω) VGS = 4 V 0.4 0.2 0.2 0.1 4.5 V Tj = 150 °C 0.0 10 V 0 5 10 15 ID (A) 0.0 20 Tj = 25 °C Fig. 8. Product data sheet 0 2 4 6 8 10 VGS (V) ID = 4.5 A Drain-source on-state resistance as a function of drain current; typical values PMV42ENE Tj = 25 °C Fig. 9. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. 16 March 2016 © NXP Semiconductors N.V. 2016. All rights reserved 8 / 17 PMV42ENE NXP Semiconductors 30 V, N-channel Trench MOSFET aaa-020814 20 aaa-020815 2 ID (A) a 15 1.5 10 1 5 0.5 Tj = 150 °C 0 0 1 Tj = 25 °C 2 3 4 VGS (V) 0 -60 5 VDS > ID × RDSon Fig. 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values 60 120 180 aaa-022067 103 VGS(th) (V) Tj (°C) Fig. 11. Normalized drain-source on-state resistance as a function of junction temperature; typical values aaa-021518 3 0 C (pF) Ciss 2 max 102 typ 1 Coss Crss min 0 -60 0 60 120 Tj (°C) 10 10-1 180 ID = 0.25 mA; VDS = VGS Product data sheet 10 VDS (V) 102 f = 1 MHz; VGS = 0 V Fig. 12. Gate-source threshold voltage as a function of junction temperature PMV42ENE 1 Fig. 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. 16 March 2016 © NXP Semiconductors N.V. 2016. All rights reserved 9 / 17 PMV42ENE NXP Semiconductors 30 V, N-channel Trench MOSFET aaa-022068 10 VDS VGS (V) ID 8 VGS(pl) 6 VGS(th) VGS 4 QGS1 2 0 QGS2 0 2 4 QG (nC) QGS QGD QG(tot) 003aaa508 Fig. 15. MOSFET transistor: Gate charge waveform definitions 6 ID = 4.4 A; VDS = 15 V; Tamb = 25 °C Fig. 14. Gate-source voltage as a function of gate charge; typical values aaa-020819 4 IS (A) 3 2 1 Tj = 150 °C 0 0.0 0.4 Tj = 25 °C 0.8 VSD (V) 1.2 VGS = 0 V Fig. 16. Source current as a function of source-drain voltage; typical values PMV42ENE Product data sheet All information provided in this document is subject to legal disclaimers. 16 March 2016 © NXP Semiconductors N.V. 2016. All rights reserved 10 / 17 PMV42ENE NXP Semiconductors 30 V, N-channel Trench MOSFET 11. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig. 17. Duty cycle definition PMV42ENE Product data sheet All information provided in this document is subject to legal disclaimers. 16 March 2016 © NXP Semiconductors N.V. 2016. All rights reserved 11 / 17 PMV42ENE NXP Semiconductors 30 V, N-channel Trench MOSFET 12. Package outline Plastic surface-mounted package; 3 leads SOT23 B D A E X HE v A 3 Q A A1 1 c 2 e1 bp w B Lp e detail X 0 1 2 mm scale Dimensions (mm are the original dimensions) Unit mm max nom min A A1 1.1 0.1 0.9 bp c D E 0.48 0.15 3.0 1.4 0.38 0.09 2.8 1.2 e e1 1.9 0.95 HE Lp Q 2.5 0.45 0.55 2.1 0.15 0.45 v w 0.2 0.1 sot023_po Outline version SOT23 References IEC JEDEC JEITA European projection Issue date 14-06-19 14-09-22 TO-236AB Fig. 18. Package outline TO-236AB (SOT23) PMV42ENE Product data sheet All information provided in this document is subject to legal disclaimers. 16 March 2016 © NXP Semiconductors N.V. 2016. All rights reserved 12 / 17 PMV42ENE NXP Semiconductors 30 V, N-channel Trench MOSFET 13. Soldering 3.3 2.9 1.9 solder lands 3 solder resist 2 1.7 solder paste occupied area 0.6 (3×) 0.7 (3×) Dimensions in mm 0.5 (3×) 0.6 (3×) 1 sot023_fr Fig. 19. Reflow soldering footprint for TO-236AB (SOT23) 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 solder resist 2.6 occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot023_fw Fig. 20. Wave soldering footprint for TO-236AB (SOT23) PMV42ENE Product data sheet All information provided in this document is subject to legal disclaimers. 16 March 2016 © NXP Semiconductors N.V. 2016. All rights reserved 13 / 17 PMV42ENE NXP Semiconductors 30 V, N-channel Trench MOSFET 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PMV42ENE v.1 20160316 Product data sheet - - PMV42ENE Product data sheet All information provided in this document is subject to legal disclaimers. 16 March 2016 © NXP Semiconductors N.V. 2016. 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The English version shall prevail in case of any discrepancy between the translated and English versions. 15.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Bitsound, CoolFlux, CoReUse, DESFire, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, MIFARE, MIFARE Plus, MIFARE Ultralight, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP Semiconductors N.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. PMV42ENE Product data sheet All information provided in this document is subject to legal disclaimers. 16 March 2016 © NXP Semiconductors N.V. 2016. All rights reserved 16 / 17 PMV42ENE NXP Semiconductors 30 V, N-channel Trench MOSFET 16. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................3 9 Thermal characteristics .........................................5 10 Characteristics ....................................................... 7 11 Test information ................................................... 11 12 Package outline ................................................... 12 13 Soldering .............................................................. 13 14 Revision history ................................................... 14 15 15.1 15.2 15.3 15.4 Legal information .................................................15 Data sheet status ............................................... 15 Definitions ...........................................................15 Disclaimers .........................................................15 Trademarks ........................................................ 16 © NXP Semiconductors N.V. 2016. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 16 March 2016 PMV42ENE Product data sheet All information provided in this document is subject to legal disclaimers. 16 March 2016 © NXP Semiconductors N.V. 2016. All rights reserved 17 / 17