PMDPB70EN 30 V, dual N-channel Trench MOSFET Rev. 1 — 25 April 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching Trench MOSFET technology Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Exposed drain pad for excellent thermal conduction 1.3 Applications Charging switch for portable devices DC-to-DC converters Small brushless DC motor drive Power management in battery-driven portables Hard disc and computing power management 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Tj = 25 °C Min Typ Max Unit Per transistor VDS drain-source voltage VGS gate-source voltage ID drain current VGS = 10 V; Tamb = 25 °C; t ≤ 5 s [1] - - 30 V -20 - 20 V - - 4.5 A - 46 57 mΩ Static characteristics (per transistor) RDSon [1] drain-source on-state resistance VGS = 10 V; ID = 3.5 A; Tj = 25 °C Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. PMDPB70EN NXP Semiconductors 30 V, dual N-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 S1 source TR1 2 G1 gate TR1 3 D2 drain TR2 4 S2 source TR2 5 G2 gate TR2 6 D1 drain TR1 Simplified outline 6 5 7 1 Graphic symbol D1 4 D2 8 2 3 7 D1 drain TR1 Transparent top view 8 D2 drain TR2 DFN2020-6 (SOT1118) G1 S1 S2 G2 017aaa254 3. Ordering information Table 3. Ordering information Type number PMDPB70EN Package Name Description Version DFN2020-6 plastic thermal enhanced ultra thin small outline package; no leads; 6 terminals SOT1118 4. Marking Table 4. Marking codes Type number Marking code PMDPB70EN 1M PMDPB70EN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 25 April 2012 © NXP B.V. 2012. All rights reserved. 2 of 15 PMDPB70EN NXP Semiconductors 30 V, dual N-channel Trench MOSFET 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - 30 V VGS gate-source voltage ID drain current Per transistor -20 20 V VGS = 10 V; Tamb = 25 °C; t ≤ 5 s [1] - 4.5 A VGS = 10 V; Tamb = 25 °C [1] - 3.5 A VGS = 10 V; Tamb = 100 °C [1] - 2.2 A - 14 A [2] - 510 mW [1] - 1165 mW - 8330 mW - 0.7 A -55 150 °C IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C Tsp = 25 °C Source-drain diode source current IS [1] Tamb = 25 °C Per device Tj junction temperature Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 017aaa123 120 Pder (%) Ider (%) 80 80 40 40 0 −75 Fig 1. 017aaa124 120 −25 25 75 125 Tj (°C) Normalized total power dissipation as a function of junction temperature PMDPB70EN Product data sheet 0 −75 175 Fig 2. −25 25 75 125 175 Tj (°C) Normalized continuous drain current as a function of junction temperature All information provided in this document is subject to legal disclaimers. Rev. 1 — 25 April 2012 © NXP B.V. 2012. All rights reserved. 3 of 15 PMDPB70EN NXP Semiconductors 30 V, dual N-channel Trench MOSFET 017aaa495 102 ID (A) Limit RDSon = VDS/ID 10 (1) 1 (2) (3) (4) (5) 10-1 (6) 10-2 10-1 1 10 102 VDS (V) IDM = single pulse (1) tp = 100 µs (2) tp = 1 ms (3) DC; Tsp = 25 °C (4) tp = 10 ms (5) tp = 100 ms (6) DC; Tamb = 25 °C; drain mounting pad 6 cm2 Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions thermal resistance from junction to ambient in free air Min Typ Max Unit [1] - 213 245 K/W [2] - 93 107 K/W [3] - 55 64 K/W - 12 15 K/W Per transistor Rth(j-a) Rth(j-sp) thermal resistance from junction to solder point [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2, t ≤ 5 s. PMDPB70EN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 25 April 2012 © NXP B.V. 2012. All rights reserved. 4 of 15 PMDPB70EN NXP Semiconductors 30 V, dual N-channel Trench MOSFET aaa-002049 103 Zth(j-a) (K/W) duty cycle = 1 0.75 0.5 0.33 0.25 0.2 102 0.1 0.05 10 0.02 0.01 1 0 10-1 10-5 10-4 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB standard footprint Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values aaa-002050 103 Zth(j-a) (K/W) duty cycle = 1 102 0.5 0.25 10 0.75 0.33 0.2 0.1 0.05 0.02 0.01 1 0 10-1 10-5 10-4 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, mounting pad for drain 6 cm2 Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMDPB70EN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 25 April 2012 © NXP B.V. 2012. All rights reserved. 5 of 15 PMDPB70EN NXP Semiconductors 30 V, dual N-channel Trench MOSFET 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics (per transistor) V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 30 - - V VGSth gate-source threshold voltage ID = 250 µA; VDS = VGS; Tj = 25 °C 1 1.5 2.5 V IDSS drain leakage current VDS = 30 V; VGS = 0 V; Tj = 25 °C - - 1 µA VDS = 30 V; VGS = 0 V; Tj = 150 °C - - 10 µA IGSS gate leakage current VGS = 20 V; VDS = 0 V; Tj = 25 °C - - 100 nA VGS = -20 V; VDS = 0 V; Tj = 25 °C - - 100 nA VGS = 10 V; ID = 3.5 A; Tj = 25 °C - 46 57 mΩ RDSon gfs drain-source on-state resistance forward transconductance VGS = 10 V; ID = 3.5 A; Tj = 150 °C - 76 94 mΩ VGS = 4.5 V; ID = 2.8 A; Tj = 25 °C - 67 88 mΩ VDS = 10 V; ID = 3.5 A; Tj = 25 °C - 6.4 - S - 3 4.5 nC - 0.52 - nC - 0.4 - nC Dynamic characteristics (per transistor) QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) tf VDS = 15 V; ID = 3.5 A; VGS = 10 V; Tj = 25 °C VDS = 15 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C - 130 - pF - 33 - pF - 14 - pF - 3 - ns - 16 - ns turn-off delay time - 15 - ns fall time - 5 - ns - 0.8 1.2 V VDS = 15 V; ID = 3.5 A; VGS = 10 V; RG(ext) = 6 Ω; Tj = 25 °C Source-drain diode (per transistor) VSD source-drain voltage PMDPB70EN Product data sheet IS = 0.7 A; VGS = 0 V; Tj = 25 °C All information provided in this document is subject to legal disclaimers. Rev. 1 — 25 April 2012 © NXP B.V. 2012. All rights reserved. 6 of 15 PMDPB70EN NXP Semiconductors 30 V, dual N-channel Trench MOSFET 017aaa496 14 ID (A) 12 4.5 V 4.0 V 10 aaa-002023 10-3 6.0 V 10 V ID (A) (1) 10-4 3.6 V (2) (3) 8 3.2 V 6 10-5 4 2.8 V 2 0 2.5 V 10-6 0 1 2 3 VDS (V) 4 0 0.5 1.0 1.5 VGS (V) 2.0 Tj = 25 °C; VDS = 5 V Tj = 25 °C (1) minimum values (2) typical values (3) maximum values Fig 6. Output characteristics: drain current as a function of drain-source voltage; typical values 017aaa497 250 2.8 V RDSon (mΩ) 3.0 V 200 3.2 V Sub-threshold drain current as a function of gate-source voltage 017aaa498 400 3.6 V 3.4 V Fig 7. RDSon (mΩ) 4.0 V 300 150 200 4.0 V 100 (1) 100 10 V 50 (2) 0 0 3 6 9 12 ID (A) 0 15 Tj = 25 °C 0 2 4 6 8 10 VGS (V) ID = 3.5 A (1) Tj = 150 °C (2) Tj = 25 °C Fig 8. Drain-source on-state resistance as a function of drain current; typical values PMDPB70EN Product data sheet Fig 9. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 25 April 2012 © NXP B.V. 2012. All rights reserved. 7 of 15 PMDPB70EN NXP Semiconductors 30 V, dual N-channel Trench MOSFET 017aaa499 14.0 ID (A) (1) 017aaa500 1.8 (2) a 10.5 1.4 7.0 1.0 3.5 (2) 0 0 (1) 2 4 VGS (V) 6 0.6 -60 0 60 120 Tj (°C) 180 VDS > ID × RDSon (1) Tj = 25 °C (2) Tj = 150 °C Fig 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values aaa-002030 2.0 Fig 11. Normalized drain-source on-state resistance as a function of junction temperature; typical values aaa-002031 103 VGS(th) (V) 1.6 C (pF) (1) (1) 1.2 102 (2) (2) 0.8 (3) (3) 0.4 0 -60 0 60 120 Tj (°C) 180 10 10-1 1 ID = 3.1 A; VDS = VGS f = 1 MHz; VGS = 0 V (1) maximum values (1) Ciss (2) typical values (2) Coss (3) minimum values (3) Crss Fig 12. Gate-source threshold voltage as a function of junction temperature PMDPB70EN Product data sheet 10 VDS (V) 102 Fig 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 25 April 2012 © NXP B.V. 2012. All rights reserved. 8 of 15 PMDPB70EN NXP Semiconductors 30 V, dual N-channel Trench MOSFET 017aaa501 10 VDS VGS (V) ID 8 VGS(pl) 6 VGS(th) VGS 4 QGS1 QGS2 QGS 2 QGD QG(tot) 017aaa137 0 0 1 2 QG (nC) 3 ID = 3.5 A; VDS = 15 V; Tamb = 25 °C Fig 14. Gate-source voltage as a function of gate charge; typical values Fig 15. Gate charge waveform definitions 017aaa502 2.4 IS (A) 1.8 (2) (1) 1.2 0.6 0 0 0.4 0.8 VSD (V) 1.2 VGS = 0 V (1) Tamb = 150 °C (2) Tamb = 25 °C Fig 16. Source current as a function of source-drain voltage; typical values PMDPB70EN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 25 April 2012 © NXP B.V. 2012. All rights reserved. 9 of 15 PMDPB70EN NXP Semiconductors 30 V, dual N-channel Trench MOSFET 8. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig 17. Duty cycle definition 9. Package outline 2.1 1.9 0.65 max 1.1 0.9 2.1 1.9 0.77 0.57 (2×) 0.54 0.44 (2×) 0.04 max 3 4 1 6 0.65 (4×) 0.35 0.25 (6×) 0.3 0.2 Dimensions in mm 10-05-31 Fig 18. Package outline SOT1118 (DFN2020-6) PMDPB70EN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 25 April 2012 © NXP B.V. 2012. All rights reserved. 10 of 15 PMDPB70EN NXP Semiconductors 30 V, dual N-channel Trench MOSFET 10. Soldering 2.1 0.65 0.49 0.65 0.49 0.3 0.4 (6×) (6×) solder lands 0.875 solder paste 1.05 1.15 (2×) (2×) 2.25 solder resist 0.875 occupied area Dimensions in mm 0.35 (6×) 0.45 (6×) 0.72 (2×) 0.82 (2×) sot1118_fr Fig 19. Reflow soldering footprint for SOT1118 (DFN2020-6) PMDPB70EN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 25 April 2012 © NXP B.V. 2012. All rights reserved. 11 of 15 PMDPB70EN NXP Semiconductors 30 V, dual N-channel Trench MOSFET 11. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes PMDPB70EN v.1 20120425 Product data sheet - - PMDPB70EN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 25 April 2012 © NXP B.V. 2012. All rights reserved. 12 of 15 PMDPB70EN NXP Semiconductors 30 V, dual N-channel Trench MOSFET 12. Legal information 12.1 Data sheet status Document status[1] [2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. 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Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 1 — 25 April 2012 © NXP B.V. 2012. All rights reserved. 13 of 15 PMDPB70EN NXP Semiconductors 30 V, dual N-channel Trench MOSFET Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published athttp://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. 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Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 Thermal characteristics . . . . . . . . . . . . . . . . . . .4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Test information . . . . . . . . . . . . . . . . . . . . . . . . .10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .12 Legal information. . . . . . . . . . . . . . . . . . . . . . . .13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Contact information. . . . . . . . . . . . . . . . . . . . . .14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2012. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 25 April 2012 Document identifier: PMDPB70EN