TO -2 20A B PSMN6R3-120PS N-channel 120 V 6.7 mΩ standard level MOSFET in TO-220 7 June 2013 Product data sheet 1. General description Standard level N-channel MOSFET in TO-220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic power supply equipment. 2. Features and benefits • • • • High efficiency due to low switching and conduction losses Improved dynamic avalanche performance Suitable for standard level gate drive TO-220 package can be mounted to heatsink 3. Applications • • • AC-to-DC power supply Synchronous rectification Motor control 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 120 V ID drain current Tmb = 25 °C; VGS = 10 V; Fig. 1 - - 70 A Ptot total power dissipation Tmb = 25 °C; Fig. 2 - - 405 W VGS = 10 V; ID = 25 A; Tj = 25 °C; 4 5.7 6.7 mΩ Static characteristics RDSon drain-source on-state resistance Fig. 12 Dynamic characteristics QGD QG(tot) gate-drain charge VGS = 10 V; ID = 25 A; VDS = 60 V; - 61.9 - nC total gate charge Fig. 14; Fig. 15 - 207.1 - nC VGS = 10 V; Tj(init) = 25 °C; ID = 70 A; - - 532 mJ Avalanche ruggedness EDS(AL)S non-repetitive drainsource avalanche energy Vsup ≤ 120 V; unclamped; RGS = 50 Ω; Fig. 3 Scan or click this QR code to view the latest information for this product PSMN6R3-120PS NXP Semiconductors N-channel 120 V 6.7 mΩ standard level MOSFET in TO-220 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 D drain 3 S source mb D drain Simplified outline Graphic symbol D mb G S mbb076 1 2 3 TO-220AB (SOT78) 6. Ordering information Table 3. Ordering information Type number Package PSMN6R3-120PS Name Description Version TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 120 V VDGR drain-gate voltage Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ - 120 V VGS gate-source voltage -20 20 V ID drain current VGS = 10 V; Tmb = 25 °C; Fig. 1 - 70 A VGS = 10 V; Tmb = 100 °C; Fig. 1 - 70 A IDM peak drain current pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 4 - 280 A Ptot total power dissipation Tmb = 25 °C; Fig. 2 - 405 W Tstg storage temperature -55 175 °C Tj junction temperature -55 175 °C Tsld(M) peak soldering temperature - 260 °C - 70 A Source-drain diode IS source current PSMN6R3-120PS Product data sheet Tmb = 25 °C All information provided in this document is subject to legal disclaimers. 7 June 2013 © NXP B.V. 2013. All rights reserved 2 / 12 PSMN6R3-120PS NXP Semiconductors N-channel 120 V 6.7 mΩ standard level MOSFET in TO-220 Symbol Parameter Conditions Min Max Unit ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 280 A VGS = 10 V; Tj(init) = 25 °C; ID = 70 A; - 532 mJ Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Vsup ≤ 120 V; unclamped; RGS = 50 Ω; Fig. 3 003aaj851 80 ID (A) 03aa16 120 Pder (%) 60 80 40 40 20 0 Fig. 1. 0 30 60 90 120 150 Tj (°C) Continuous drain current as a function of mounting base temperature IAL (A) 0 180 Fig. 2. 0 50 100 150 Tmb (°C) 200 Normalized total power dissipation as a function of mounting base temperature 003aaj852 102 (1) 10 (2) 1 10-3 Fig. 3. 10-2 10-1 1 tAL (ms) 10 Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time PSMN6R3-120PS Product data sheet All information provided in this document is subject to legal disclaimers. 7 June 2013 © NXP B.V. 2013. All rights reserved 3 / 12 PSMN6R3-120PS NXP Semiconductors N-channel 120 V 6.7 mΩ standard level MOSFET in TO-220 003aaj850 103 ID (A) Limit RDSon = VDS / ID tp = 10 us 102 100 us 10 DC 1 ms 1 10 ms 100 ms 10-1 Fig. 4. 1 102 10 103 VDS (V) Safe operating area; continuous and peak drain current as a function of drain-source voltage 8. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base Fig. 5 - 0.3 0.37 K/W Rth(j-a) thermal resistance from junction to ambient - 60 - K/W vertical in free air 003aaj849 1 Zth(j-mb) (K/W) δ = 0.5 10-1 0.2 0.1 0.05 P 10-2 0.02 δ= tp T single shot tp 10-3 10-6 Fig. 5. 10-5 10-4 10-3 10-2 10-1 t T tp (s) 1 Transient thermal impedance from junction to mounting base as a function of pulse duration PSMN6R3-120PS Product data sheet All information provided in this document is subject to legal disclaimers. 7 June 2013 © NXP B.V. 2013. All rights reserved 4 / 12 PSMN6R3-120PS NXP Semiconductors N-channel 120 V 6.7 mΩ standard level MOSFET in TO-220 9. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 120 - - V ID = 250 µA; VGS = 0 V; Tj = -55 °C 108 - - V gate-source threshold voltage ID = 1 mA; VDS = VGS; Tj = 25 °C; 2 3 4 V 1 - - V - - 4.6 V VDS = 120 V; VGS = 0 V; Tj = 25 °C - 0.1 1 µA VDS = 120 V; VGS = 0 V; Tj = 175 °C - - 500 µA VGS = 20 V; VDS = 0 V; Tj = 25 °C - 10 100 nA VGS = -20 V; VDS = 0 V; Tj = 25 °C - 10 100 nA VGS = 10 V; ID = 25 A; Tj = 25 °C; 4 5.7 6.7 mΩ - 16.5 19.4 mΩ f = 1 MHz 0.44 0.88 1.76 Ω Static characteristics V(BR)DSS VGS(th) Fig. 10; Fig. 11 ID = 1 mA; VDS = VGS; Tj = 175 °C; Fig. 10; Fig. 11 ID = 1 mA; VDS = VGS; Tj = -55 °C; Fig. 10; Fig. 11 IDSS IGSS RDSon drain leakage current gate leakage current drain-source on-state resistance Fig. 12 VGS = 10 V; ID = 25 A; Tj = 175 °C; Fig. 13; Fig. 12 RG internal gate resistance (AC) Dynamic characteristics QG(tot) total gate charge ID = 25 A; VDS = 60 V; VGS = 10 V; - 207.1 - nC QGS gate-source charge Fig. 14; Fig. 15 - 43.2 - nC QGS(th) pre-threshold gatesource charge - 29.8 - nC QGS(th-pl) post-threshold gatesource charge - 13.4 - nC QGD gate-drain charge - 61.9 - nC VGS(pl) gate-source plateau voltage ID = 25 A; VDS = 60 V; Fig. 14; Fig. 15 - 4.3 - V Ciss input capacitance VDS = 60 V; VGS = 0 V; f = 1 MHz; - 11384 - pF Coss output capacitance Tj = 25 °C; Fig. 16 - 534 - pF Crss reverse transfer capacitance - 358 - pF td(on) turn-on delay time VDS = 60 V; RL = 2.4 Ω; VGS = 10 V; - 42.1 - ns tr rise time RG(ext) = 5 Ω; Tj = 25 °C - 58.2 - ns PSMN6R3-120PS Product data sheet All information provided in this document is subject to legal disclaimers. 7 June 2013 © NXP B.V. 2013. All rights reserved 5 / 12 PSMN6R3-120PS NXP Semiconductors N-channel 120 V 6.7 mΩ standard level MOSFET in TO-220 Symbol Parameter td(off) tf Conditions Min Typ Max Unit turn-off delay time - 142.1 - ns fall time - 67.7 - ns Source-drain diode VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 17 - 0.79 1.2 V trr reverse recovery time IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V; - 76.1 - ns Qr recovered charge VDS = 60 V - 264.2 - nC 003aaj844 120 ID (A) 6 10 100 5 80 16 VGS (V) = 4.5 60 12 40 8 20 0 Fig. 6. 003aaj843 24 RDSon (mΩ ) 20 5.5 4 4 0 1 2 3 0 4 VDS(V) Output characteristics: drain current as a Fig. 7. function of drain-source voltage; typical values 003aaj841 250 0 8 12 16 VGS (V) 20 Drain-source on-state resistance as a function of gate-source voltage; typical values 003aaj842 100 gfs (S) ID (A) 200 80 150 60 100 40 50 20 0 Fig. 8. 4 0 20 40 60 80 ID (A) Forward transconductance as a function of drain current; typical values PSMN6R3-120PS Product data sheet 0 100 Fig. 9. Tj = 175 ° C 0 4 VGS (V) 6 Transfer characteristics: drain current as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. 7 June 2013 2 Tj = 25 ° C © NXP B.V. 2013. All rights reserved 6 / 12 PSMN6R3-120PS NXP Semiconductors N-channel 120 V 6.7 mΩ standard level MOSFET in TO-220 003aad280 5 ID (A) VGS(th) (V) 4 typ max 10- 3 typ 2 min 10- 2 max 3 10- 4 min 10- 5 1 0 - 60 0 60 120 Tj (°C) 10- 6 180 Fig. 10. Gate-source threshold voltage as a function of junction temperature a RDSon (mΩ ) 4.5 20 0 2 4 VGS (V) 6 Fig. 11. Sub-threshold drain current as a function of gate-source voltage 003aaj848 25 003aak793 3 2.4 1.8 15 10 1.2 VGS (V) = 5V 5.5 5 0 03aa35 10- 1 7 0.6 10 0 20 40 60 80 100 0 -60 120 ID (A) Fig. 12. Drain-source on-state resistance as a function of drain current; typical values PSMN6R3-120PS Product data sheet -30 0 30 60 90 120 150 Tj (°C) 180 Fig. 13. Normalized drain-source on-state resistance factor as a function of junction temperature All information provided in this document is subject to legal disclaimers. 7 June 2013 © NXP B.V. 2013. All rights reserved 7 / 12 PSMN6R3-120PS NXP Semiconductors N-channel 120 V 6.7 mΩ standard level MOSFET in TO-220 003aaj845 10 VDS VGS (V) 8 ID VGS(pl) 96 V 60 V VDS = 24 V 6 VGS(th) VGS 4 QGS1 QGS2 QGS QGD QG(tot) 2 003aaa508 0 Fig. 14. Gate charge waveform definitions 0 50 100 150 200 250 QG (nC) Fig. 15. Gate-source voltage as a function of gate charge; typical values 003aaj846 1E+5 C (pF) IS (A) Ciss 80 104 10 60 Coss 3 003aaj847 100 40 Crss 102 10 10-1 Tj = 175° C 20 1 10 VDS (V) 0 102 0 0.3 Tj = 25 °C 0.6 0.9 VSD (V) 1.2 Fig. 16. Input, output and reverse transfer capacitances Fig. 17. Source (diode forward) current as a function of as a function of drain-source voltage; typical source-drain (diode forward) voltage; typical values values PSMN6R3-120PS Product data sheet All information provided in this document is subject to legal disclaimers. 7 June 2013 © NXP B.V. 2013. All rights reserved 8 / 12 PSMN6R3-120PS NXP Semiconductors N-channel 120 V 6.7 mΩ standard level MOSFET in TO-220 10. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 E A A1 p q mounting base D1 D L1(1) L2(1) Q L b1(2) (3×) b2(2) (2×) 1 2 3 b(3×) e c e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1(2) b2(2) c D D1 E e L L1(1) L2(1) max. p q Q mm 4.7 4.1 1.40 1.25 0.9 0.6 1.6 1.0 1.3 1.0 0.7 0.4 16.0 15.2 6.6 5.9 10.3 9.7 2.54 15.0 12.8 3.30 2.79 3.0 3.8 3.5 3.0 2.7 2.6 2.2 Notes 1. Lead shoulder designs may vary. 2. Dimension includes excess dambar. OUTLINE VERSION SOT78 REFERENCES IEC JEDEC JEITA 3-lead TO-220AB SC-46 EUROPEAN PROJECTION ISSUE DATE 08-04-23 08-06-13 Fig. 18. Package outline TO-220AB (SOT78) PSMN6R3-120PS Product data sheet All information provided in this document is subject to legal disclaimers. 7 June 2013 © NXP B.V. 2013. All rights reserved 9 / 12 PSMN6R3-120PS NXP Semiconductors N-channel 120 V 6.7 mΩ standard level MOSFET in TO-220 In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 11. 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Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Limiting values .......................................................2 8 Thermal characteristics .........................................4 9 Characteristics ....................................................... 5 10 Package outline ..................................................... 9 11 11.1 11.2 11.3 11.4 Legal information .................................................10 Data sheet status ............................................... 10 Definitions ...........................................................10 Disclaimers .........................................................10 Trademarks ........................................................ 11 © NXP B.V. 2013. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 7 June 2013 PSMN6R3-120PS Product data sheet All information provided in this document is subject to legal disclaimers. 7 June 2013 © NXP B.V. 2013. All rights reserved 12 / 12