Data Sheet

TO
-2
20F
PSMN4R6-100XS
N-channel 100V 4.6 mΩ standard level MOSFET in TO220F
(SOT186A)
Rev. 1 — 3 July 2012
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C.
This product is designed and qualified for use in a wide range of industrial,
communications and domestic equipment.
1.2 Features and benefits
 High efficiency due to low switching
and conduction losses
 Isolated package
 Suitable for standard level gate drive
1.3 Applications
 AC-to-DC power supply equipment
 Server power supplies
 Motor control
 Synchronous rectification
1.4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
Tj ≥ 25 °C; Tj ≤ 175 °C
-
-
100
V
ID
drain current
Tmb = 25 °C; VGS = 10 V;
see Figure 1
-
-
70.4
A
Ptot
total power dissipation
Tmb = 25 °C; see Figure 2
-
-
63.8
W
VGS = 10 V; ID = 15 A; Tj = 25 °C;
see Figure 12; see Figure 13
-
3.95
4.6
mΩ
VGS = 10 V; ID = 15 A; VDS = 50 V;
see Figure 14; see Figure 15
-
40
-
nC
-
153
-
nC
-
-
673
mJ
Static characteristics
RDSon
drain-source on-state resistance
Dynamic characteristics
QGD
gate-drain charge
QG(tot)
total gate charge
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C;
ID = 70.4 A; Vsup ≤ 100 V;
unclamped; RGS = 50 Ω;
see Figure 3
PSMN4R6-100XS
NXP Semiconductors
N-channel 100V 4.6 mΩ standard level MOSFET in TO220F (SOT186A)
2. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
1
G
gate
2
D
drain
3
S
mb
Simplified outline
Graphic symbol
mb
source
D
G
mounting base; isolated
mbb076
S
1 2 3
SOT186A
3. Ordering information
Table 3.
Ordering information
Type number
PSMN4R6-100XS
PSMN4R6-100XS
Product data sheet
Package
Name
Description
Version
-
plastic single-ended package; isolated heatsink mounted;
1 mounting hole; 3-lead TO-220 "full pack"
SOT186A
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N-channel 100V 4.6 mΩ standard level MOSFET in TO220F (SOT186A)
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tj ≥ 25 °C; Tj ≤ 175 °C
-
100
V
VDGR
drain-gate voltage
Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ
-
100
V
VGS
gate-source voltage
ID
drain current
-20
20
V
VGS = 10 V; Tmb = 25 °C; see Figure 1
-
70.4
A
VGS = 10 V; Tmb = 100 °C; see Figure 1
-
49.7
A
-
281
A
IDM
peak drain current
pulsed; tp ≤ 10 µs; Tmb = 25 °C; see Figure 4
Ptot
total power dissipation
Tmb = 25 °C; see Figure 2
-
63.8
W
Tstg
storage temperature
-55
175
°C
Tj
junction temperature
-55
175
°C
Tsld(M)
peak soldering temperature
-
260
°C
Source-drain diode
IS
source current
Tmb = 25 °C
-
53.2
A
ISM
peak source current
pulsed; tp ≤ 10 µs; Tmb = 25 °C
-
281
A
VGS = 10 V; Tj(init) = 25 °C; ID = 70.4 A;
Vsup ≤ 100 V; unclamped; RGS = 50 Ω;
see Figure 3
-
673
mJ
Avalanche ruggedness
non-repetitive drain-source
avalanche energy
EDS(AL)S
003aaj810
80
03aa16
120
ID
(A)
Pder
(%)
60
80
40
40
20
0
0
0
Fig 1.
50
100
150
Tmb (°C)
200
Product data sheet
50
100
150
200
Tmb (°C)
Continuous drain current as a function of
mounting base temperature
PSMN4R6-100XS
0
Fig 2.
Normalized total power dissipation as a
function of mounting base temperature
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PSMN4R6-100XS
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N-channel 100V 4.6 mΩ standard level MOSFET in TO220F (SOT186A)
003aaj808
102
IAL
(A)
(1)
10
(2)
1
10-3
Fig 3.
10-2
10-1
1
tAL (ms)
10
Single pulse avalanche rating; avalanche current as a function of avalanche time
003aaj809
103
ID
(A)
Limit RDSon = VDS / ID
tp =10 μ s
102
100 μ s
10
DC
1 ms
1
10 ms
100 ms
10-1
10-1
Fig 4.
1
10
102
103
VDS (V)
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PSMN4R6-100XS
Product data sheet
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N-channel 100V 4.6 mΩ standard level MOSFET in TO220F (SOT186A)
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-mb)
thermal resistance from junction to mounting base
see Figure 5
-
2.1
2.35
K/W
Rth(j-a)
thermal resistance from junction to ambient
vertical in free air
-
55
-
K/W
003aag907
10
Zth(j-mb)
(K/W)
δ = 0.5
1
0.2
0.1
10
0.05
-1
0.02
δ=
P
tp
T
10-2
single shot
t
tp
T
10-3
10-6
Fig 5.
10-5
10-4
10-3
10-2
10-1
1
10
tp (s)
102
Transient thermal impedance from junction to mounting base as a function of pulse duration
6. Isolation characteristics
Table 6.
Isolation characteristics
Symbol
Parameter
Cisol
isolation capacitance
Visol(RMS)
RMS isolation voltage
[1]
Conditions
[1]
50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; sinusoidal
waveform; clean and dust free
Min
Typ
Max
Unit
-
10
-
pF
-
-
2500
V
f = 1 MHz
PSMN4R6-100XS
Product data sheet
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Rev. 1 — 3 July 2012
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N-channel 100V 4.6 mΩ standard level MOSFET in TO220F (SOT186A)
7. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
-
-
V
Static characteristics
V(BR)DSS
drain-source breakdown
voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
100
ID = 250 µA; VGS = 0 V; Tj = -55 °C
90
-
-
V
VGS(th)
gate-source threshold voltage
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 10; see Figure 11
2
3
4
V
ID = 1 mA; VDS = VGS; Tj = 175 °C;
see Figure 10
1
-
-
V
ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 10
-
-
4.6
V
µA
IDSS
drain leakage current
VDS = 100 V; VGS = 0 V; Tj = 25 °C
-
-
10
VDS = 100 V; VGS = 0 V; Tj = 100 °C
-
-
200
µA
IGSS
gate leakage current
VGS = 20 V; VDS = 0 V; Tj = 25 °C
-
2
100
nA
VGS = -20 V; VDS = 0 V; Tj = 25 °C
-
2
100
nA
VGS = 10 V; ID = 15 A; Tj = 25 °C;
see Figure 12; see Figure 13
-
3.95
4.6
mΩ
VGS = 10 V; ID = 15 A; Tj = 100 °C;
see Figure 13
-
6.9
8.1
mΩ
VGS = 10 V; ID = 15 A; Tj = 175 °C;
see Figure 13
-
11.05
12.9
mΩ
f = 1 MHz
-
0.9
-
Ω
ID = 15 A; VDS = 50 V; VGS = 10 V; see
Figure 14; see Figure 15
-
153
-
nC
RDSon
RG
drain-source on-state
resistance
internal gate resistance (AC)
Dynamic characteristics
QG(tot)
total gate charge
QGS
gate-source charge
-
28
-
nC
QGS(th)
pre-threshold gate-source
charge
-
25
-
nC
QGS(th-pl)
post-threshold gate-source
charge
-
3
-
nC
QGD
gate-drain charge
-
40
-
nC
VGS(pl)
gate-source plateau voltage
ID = 15 A; VDS = 50 V; see Figure 14;
see Figure 15
-
3.5
-
V
Ciss
input capacitance
VDS = 50 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; see Figure 16;
see Figure 17
-
9900
-
pF
Coss
output capacitance
VDS = 50 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; see Figure 16
-
660
-
pF
Crss
reverse transfer capacitance
VDS = 50 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; see Figure 16;
see Figure 17
-
381
-
pF
VDS = 50 V; RL = 4 Ω; VGS = 10 V;
RG(ext) = 4.7 Ω; Tj = 25 °C
td(on)
turn-on delay time
tr
rise time
td(off)
tf
-
35
-
ns
-
40
-
ns
turn-off delay time
-
170
-
ns
fall time
-
71
-
ns
PSMN4R6-100XS
Product data sheet
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PSMN4R6-100XS
NXP Semiconductors
N-channel 100V 4.6 mΩ standard level MOSFET in TO220F (SOT186A)
Table 7.
Characteristics …continued
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
-
0.72
1.2
V
Source-drain diode
VSD
source-drain voltage
IS = 10 A; VGS = 0 V; Tj = 25 °C;
see Figure 18
trr
reverse recovery time
Qr
recovered charge
IS = 10 A; dIS/dt = -100 A/µs;
VGS = 0 V; VDS = 50 V
003aag908
250
VGS (V) =
ID
(A)
10.0 6.0 5.0
-
63
-
ns
-
173
-
nC
003aag909
10
4.8
RDSon
(mΩ)
200
8
4.6
150
6
4.4
100
4
4.2
50
2
4
0
0
0
Fig 6.
0.4
0.8
1.2
1.6
VDS (V)
2
0
Output characteristics; drain current as a
function of drain-source voltage; typical values
Fig 7.
003aag910
250
gfs
(S)
8
12
16
20
VGS (V)
Drain-source on-state resistance as a function
of gate-source voltage; typical values
003aag911
250
ID
(A)
200
200
150
150
100
100
50
50
0
Tj = 175 °C
Tj = 25 °C
0
0
Fig 8.
4
50
100
150
200
ID (A)
250
Forward transconductance as a function of
drain current; typical values
PSMN4R6-100XS
Product data sheet
0
Fig 9.
4
VGS (V)
6
Transfer characteristics; drain current as a
function of gate-source voltage; typical values
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2
© NXP B.V. 2012. All rights reserved.
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PSMN4R6-100XS
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N-channel 100V 4.6 mΩ standard level MOSFET in TO220F (SOT186A)
003aad280
5
03aa35
10−1
ID
(A)
VGS(th)
(V)
4
3
typ
max
10−3
typ
2
min
10−2
max
10−4
min
10−5
1
10−6
0
−60
0
60
120
0
180
4
Fig 11. Sub-threshold drain current as a function of
gate-source voltage
003aag912
10
VGS (V) = 4.2
4.4
6
VGS (V)
Fig 10. Gate-source threshold voltage as a function of
junction temperature
RDSon
(mΩ)
2
Tj (°C)
003aag654
3
4.6
a
2.5
4.8
8
2
6
1.5
6.0
4
10.0
1
2
0.5
0
0
50
100
150
200
ID (A)
250
Fig 12. Drain-source on-state resistance as a function
of drain current; typical values
PSMN4R6-100XS
Product data sheet
0
-60
0
60
120
Tj (°C)
180
Fig 13. Normalized drain-source on-state resistance
factor as a function of junction temperature
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Rev. 1 — 3 July 2012
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PSMN4R6-100XS
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N-channel 100V 4.6 mΩ standard level MOSFET in TO220F (SOT186A)
003aag913
10
VGS
(V)
VDS
ID
8
VDS = 20V 50V 80V
VGS(pl)
6
VGS(th)
VGS
4
QGS1
QGS2
QGS
QGD
QG(tot)
2
003aaa508
0
0
Fig 14. Gate charge waveform definitions
100
150
QG (nC)
200
Fig 15. Gate-source voltage as a function of gate
charge; typical values
003aag914
105
50
003aag916
16000
C
(pF)
C
(pF)
Ciss
12000
10
4
Ciss
8000
103
Coss
Crss
4000
Crss
102
10-1
1
10
VDS (V)
0
102
0
Fig 16. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PSMN4R6-100XS
Product data sheet
3
6
9
VGS (V)
12
Fig 17. Input and reverse transfer capacitances as a
function of gate-source voltage, typical values
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Rev. 1 — 3 July 2012
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PSMN4R6-100XS
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N-channel 100V 4.6 mΩ standard level MOSFET in TO220F (SOT186A)
003aag915
250
IS
(A)
200
150
100
Tj = 175 °C
Tj = 25 °C
50
0
0
0.3
0.6
0.9
VSD (V)
1.2
Fig 18. Source current as a function of source-drain voltage; typical values
PSMN4R6-100XS
Product data sheet
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Rev. 1 — 3 July 2012
© NXP B.V. 2012. All rights reserved.
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PSMN4R6-100XS
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N-channel 100V 4.6 mΩ standard level MOSFET in TO220F (SOT186A)
8. Package outline
Plastic single-ended package; isolated heatsink mounted;
1 mounting hole; 3-lead TO-220 'full pack'
SOT186A
E
A
A1
P
q
D1
mounting
base
T
D
j
L2
L1
K
Q
b1
L
b2
1
2
3
b
c
w M
e
e1
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
UNIT
A
A1
b
b1
b2
c
D
D1
E
e
e1
j
K
mm
4.6
4.0
2.9
2.5
0.9
0.7
1.1
0.9
1.4
1.0
0.7
0.4
15.8
15.2
6.5
6.3
10.3
9.7
2.54
5.08
2.7
1.7
0.6
0.4
L
L1
14.4 3.30
13.5 2.79
L2
max.
P
Q
q
3
3.2
3.0
2.6
2.3
3.0
2.6
(2)
T
2.5
w
0.4
Notes
1. Terminal dimensions within this zone are uncontrolled.
2. Both recesses are ∅ 2.5 × 0.8 max. depth
OUTLINE
VERSION
SOT186A
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
02-04-09
06-02-14
3-lead TO-220F
Fig 19. SOT186A
PSMN4R6-100XS
Product data sheet
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N-channel 100V 4.6 mΩ standard level MOSFET in TO220F (SOT186A)
9. Revision history
Table 8.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PSMN4R6-100XS v.1
20120703
Product data sheet
-
-
PSMN4R6-100XS
Product data sheet
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N-channel 100V 4.6 mΩ standard level MOSFET in TO220F (SOT186A)
10. Legal information
10.1 Data sheet status
Document status[1] [2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term 'short data sheet' is explained in section "Definitions".
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URLhttp://www.nxp.com.
10.2 Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
10.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
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Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with theTerms and conditions of commercial sale of NXP Semiconductors.
PSMN4R6-100XS
Product data sheet
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
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malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
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PSMN4R6-100XS
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N-channel 100V 4.6 mΩ standard level MOSFET in TO220F (SOT186A)
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products are sold subject to the general terms and conditions of commercial
sale, as published athttp://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
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conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
10.4 Trademarks
Export control — This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
Adelante,Bitport,Bitsound,CoolFlux,CoReUse,DESFire,EZ-HV,FabKey,G
reenChip,HiPerSmart,HITAG,I²C-bus
logo,ICODE,I-CODE,ITEC,Labelution,MIFARE,MIFARE Plus,MIFARE
Ultralight,MoReUse,QLPAK,Silicon
Tuner,SiliconMAX,SmartXA,STARplug,TOPFET,TrenchMOS,TriMedia
andUCODE — are trademarks of NXP B.V.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
HD Radio andHD Radio logo — are trademarks of iBiquity Digital
Corporation.
11. Contact information
For more information, please visit:http://www.nxp.com
For sales office addresses, please send an email to:[email protected]
PSMN4R6-100XS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 3 July 2012
© NXP B.V. 2012. All rights reserved.
14 of 15
PSMN4R6-100XS
NXP Semiconductors
N-channel 100V 4.6 mΩ standard level MOSFET in TO220F (SOT186A)
12. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
10.1
10.2
10.3
10.4
11
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits . . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
Pinning information . . . . . . . . . . . . . . . . . . . . . . .2
Ordering information . . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
Thermal characteristics . . . . . . . . . . . . . . . . . . .5
Isolation characteristics . . . . . . . . . . . . . . . . . . .5
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . .12
Legal information. . . . . . . . . . . . . . . . . . . . . . . .13
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Contact information. . . . . . . . . . . . . . . . . . . . . .14
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2012.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 3 July 2012
Document identifier: PSMN4R6-100XS