BSP 171 P Preliminary data SIPMOS Power Transistor •P-Channel •Enhancement mode •Avalanche rated •Logic Level •dv/dt rated Type VDS ID RDS(on) BSP 171 P -60 V -1.8 A 0.3 Ω Pin 1 Pin2/4 Pin 3 G D S Package Ordering Code @ VGS VGS = -10 V P-SOT223-4-1 Q67041-S4019 - - Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Continuous drain current ID T A = 25 °C Unit A -1.8 T A = 100 °C Pulsed drain current ID puls -1.15 -7.2 T A = 25 °C Avalanche energy, single pulse EAS 70 mJ Avalanche current,periodic limited by Tjmax IAR -1.8 A Avalanche energy,periodic limited by Tj(max) Reverse diode dv/dt EAR 0.18 mJ dv/dt 6 T jmax = 150 °C Gate source voltage VGS ±14 V Power dissipation, TA = 25 °C Ptot 1.8 W Operating temperature Tj -55 ...+150 °C Storage temperature Tstg -55 ...+150 ID = -1.8 A, VDD = -25 V, RGS = 25 Ω KV/µs IS = -1.8 A, V DD ≤V(BR)DSS, di/dt = 100 A/µs, IEC climatic category; DIN IEC 68-1 Semiconductor Group 55/150/56 1 04 / 1998 BSP 171 P Preliminary data Electrical Characteristics Parameter Symbol at Tj = 25 °C, unless otherwise specified Thermal Characteristics Values Unit min. typ. max. Thermal resistance, junction -soldering point (Pin 4) RthJS - tbd tbd Thermal resistance, junction - ambient RthJA - - - SMD version, device on PCB: RthJA @ min. footprint - tbd - @ 6 cm2 cooling areaF) - tbd 70 V(BR)DSS -60 - - VGS(th) -1 -1.5 -2 K/W Static Characteristics Drain- source breakdown voltage V VGS = 0 V, ID = -0.25 mA Gate threshold voltage, VGS = VDS ID = -460 µA, Tj = 25 °C Zero gate voltage drain current IDSS µA VDS = -60 V, VGS = 0 V, Tj = -40 °C - - -0.1 VDS = -60 V, VGS = 0 V, Tj = 25 °C - -0.1 -1 VDS = -60 V, VGS = 0 V, Tj = 150 °C Gate-source leakage current - -10 -100 -100 IGSS nA VGS = -20 V, VDS = 0 V Drain-Source on-state resistance Ω RDS(on) VGS = -4.5 V, ID = -1.5 A - 0.3 0.45 VGS = -10 V, ID = -1.8 A - 0.21 0.3 Semiconductor Group 2 04 / 1998 BSP 171 P Preliminary data Electrical Characteristics Symbol Parameter at Tj = 25 °C, unless otherwise specified Dynamic Characteristics Values Unit min. typ. max. Transconductance gfs 1 3 - S VDS≥2*ID*RDS(on)max , ID = -1.8 A Input capacitance Ciss - 365 460 pF VGS = 0 V, VDS = -25 V, f = 1 MHz Output capacitance Coss - 105 135 Crss - 40 50 td(on) - 13 20 tr - 30 45 td(off) - 200 300 tf - 75 115 VGS = 0 V, VDS = -25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, VDS = -25 V, f = 1 MHz Turn-on delay time ns VDD = -30 V, VGS = -10 V, ID = -1.8 A, RG = 6 Ω Rise time VDD = -30 V, VGS = -10 V, ID = -1.8 A, RG = 6 Ω Turn-off delay time VDD = -30 V, VGS = -10 V, ID = -1.8 A, RG = 6 Ω Fall time VDD = -30 V, VGS = -10 V, ID = -1.8 A, RG = 6 Ω Semiconductor Group 3 04 / 1998 BSP 171 P Preliminary data Electrical Characteristics Symbol Parameter at Tj = 25 °C, unless otherwise specified Dynamic Characteristics Values Unit min. typ. max. QG(th) - 0.6 0.9 Gate charge at Vgs=5V Qg(5) - 8 12 VDD = -24 V, ID = -1.8 A , VGS = 0 to -5 V Gate charge total Qg - 14 21 V(plateau) - 2.8 - V IS - - -1.8 A ISM - - -7.2 VSD - -0.95 -1.2 V Reverse recovery time trr - 100 150 ns VR = -30 V, IF=IS , diF/dt = 100 A/µs Reverse recovery charge Qrr - 0.2 0.3 µC Gate charge at threshold nC VDD = -24 V, ID≥ -0,1 A, VGS = 0 to - 1 V nC VDD = -24 V, ID = -1.8 A, VGS = 0 to -10 V Gate plateau voltage VDD = -24 V, ID = -1.8 A Reverse Diode Inverse diode continuous forward current T A = 25 °C Inverse diode direct current,pulsed T A = 25 °C Inverse diode forward voltage VGS = 0 V, IF = -3.6 A VR = -30 V, IF=l S , di F/dt = 100 A/µs Semiconductor Group 4 04 / 1998 BSP 171 P Preliminary data Edition 7.97 Published by Siemens AG, Bereich Halbleiter Vetrieb, Werbung, Balanstraße 73, 81541 München © Siemens AG 1997 All Rights Reserved. Attention please! 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