DISCRETE SEMICONDUCTORS DATA SHEET BLW78 HF/VHF power transistor Product specification August 1986 Philips Semiconductors Product specification HF/VHF power transistor BLW78 It has a 1⁄2" flange envelope with a ceramic cap. All leads are isolated from the flange. DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, AB or B operated mobile, industrial and military transmitters in the h.f. and v.h.f. bands. It is resistance stabilized and is guaranteed to withstand severe load mismatch conditions. QUICK REFERENCE DATA R.F. performance up to Th = 25 °C MODE OF OPERATION VCE V IC IC(ZS) A f MHz − 150 PL W 100 η % Gp dB > > 6 70 d3(1) dB − c.w. (class-B) 28 s.s.b. (class-A) 26 3 28 35 (P.E.P.) typ. 19,5 − typ. −40 s.s.b. (class-AB) 28 0,05 28 100 (P.E.P.) typ. 19,0 typ. 42 typ. −30 Note 1. Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones. Relative to the according peak envelope powers these figures should be increased by 6 dB. PIN CONFIGURATION PINNING - SOT121B. PIN handbook, halfpage 4 1 3 DESCRIPTION 1 collector 2 emitter 3 base 4 emitter 2 MLA876 Fig.1 Simplified outline. SOT121B. PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged. August 1986 2 Philips Semiconductors Product specification HF/VHF power transistor BLW78 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (VBE = 0) peak value VCESM max. 70 V Collector-emitter voltage (open base) VCEO max. 35 V Emitter-base voltage (open collector) VEBO max. 4 V Collector current (average) IC(AV) max. 10 A Collector current (peak value); f > 1 MHz ICM max. 25 A R.F. power dissipation (f > 1 MHz); Tmb = 25 °C Prf max. 160 W Storage temperature Tstg Operating junction temperature Tj MGP543 102 handbook, halfpage −65 to +150 °C max. 200 °C MGP544 200 handbook, halfpage Prf (W) IC (A) 150 ΙΙΙ 10 derate by 0.79 W/K ΙΙ Th = 70 °C Tmb = 25 °C 100 derate by 0.61 W/K Ι 1 1 10 VCE (V) 50 102 0 50 Th (°C) 100 I Continuous d.c. operation II Continuous r.f. operation III Short-time operation during mismatch Fig.3 R.F. power dissipation; VCE ≤ 28 V; f > 1 MHz. Fig.2 D.C. SOAR. THERMAL RESISTANCE (dissipation = 80 W; Tmb = 86 °C; i.e. Th = 70 °C) From junction to mounting base (d.c. dissipation) Rth j-mb(dc) = 1,45 K/W From junction to mounting base (r.f. dissipation) Rth j-mb(rf) = 1,06 K/W From mounting base to heatsink Rth mb-h = 0,2 K/W August 1986 3 Philips Semiconductors Product specification HF/VHF power transistor BLW78 CHARACTERISTICS Tj = 25 °C Collector-emitter breakdown voltage V(BR)CES > 70 V V(BR)CEO > 35 V V(BR)EBO > 4 V ICES < 5 mA hFE 20 to 85 VCEsat typ. −IE = 5 A; VCB = 28 V fT typ. 370 MHz −IE = 15 A; VCB = 28 V fT typ. 350 MHz Cc typ. 155 pF IC = 100 mA; VCE = 28 V Cre typ. 102 pF Collector-flange capacitance Ccf typ. VBE = 0; IC = 50 mA Collector-emitter breakdown voltage open base; IC = 100 mA Emitter-base breakdown voltage open collector; IE = 5 mA Collector cut-off current VBE = 0; VCE = 35 V D.C. current gain(1) IC = 5 A; VCE = 5 V Collector-emitter saturation voltage IC = 15 A; IB = 3 A Transition frequency at f = 100 2 V MHz(2) Collector capacitance at f = 1 MHz IE = Ie = 0; VCB = 28 V Feedback capacitance at f = 1 MHz Notes 1. Measured under pulse conditions: tp ≤ 300 µs; δ ≤ 0,02. 2. Measured under pulse conditions: tp ≤ 50 µs; δ ≤ 0,01. August 1986 4 3 pF Philips Semiconductors Product specification HF/VHF power transistor BLW78 MGP545 75 MGP546 600 handbook, halfpage handbook, halfpage VCE = 28 V hFE Cc (pF) 50 400 5V typ 25 200 0 0 5 IC (A) 0 10 0 Fig.4 Typical values; Tj = 25 °C. 20 VCB (V) 40 Fig.5 IE = Ie = 0; f = 1 MHz; Tj = 25 °C. MGP547 750 handbook, full pagewidth fT (MHz) 500 VCB = 28 V 20 V 250 0 0 5 10 15 Fig.6 Typical values; f = 100 MHz; Tj = 25 °C. August 1986 5 20 −IE (A) 25 Philips Semiconductors Product specification HF/VHF power transistor BLW78 APPLICATION INFORMATION R.F. performance in c.w. operation (unneutralized common-emitter class-B circuit); Th = 25 °C f (MHz) VCE (V) PL (W) PD (W) η (%) zi (Ω) ZL (Ω) 150 28 100 ≤ 25 ≥ 70 0,74 + j1,35 4,30 + j0,60 L5 handbook, full pagewidth C1 L1 50 Ω L3 C4 C2 L2 C8 50 Ω T.U.T. L4 C7 C3 C5 C6 +VCC MGP548 Fig.7 Test circuit; c.w. class-B; f = 150 MHz. List of components: C1 = C2 = C7 = C8 = 5 to 100 pF film dielectric trimmer C3 = 203 pF; 2 × 82 pF and 39 pF multilayer ceramic chip capacitors (500 V, ATC(1)) in parallel C4 = 39 pF multilayer ceramic chip capacitor (500 V, ATC(1)) C5 = 1 nF feed-through capacitor C6 = 100 nF polyester capacitor L1 = strip (30 mm × 8 mm); bent to form inverted ‘U’ shape with top 15 mm above heatsink, and bottom 5 mm above heatsink L2 = 1 µH r.f. choke L3 = strip; shape as shown in Fig.8; 5 mm above heatsink L4 = strip (40 mm × 8 mm); bent in form , 25 mm at 15 mm above heatsink, 5 mm at 5 mm above heatsink L5 = strip (75 mm long; width 8 mm); 5 mm above base L1, L3, L4, and L5 are copper strips with a thickness of 0,6 mm. Heatsink: aluminium; 0,9 K/W At PL = 100 W and VCE = 28 V, the output power at heatsink temperatures between 25 °C and 90 °C relative to that at 25 °C is diminished by typ. 0,12 W/K. Component layout on an aluminium heatsink for 150 MHz test circuit is shown in Fig.8. Note 1. ATC means American Technical Ceramics. August 1986 6 Philips Semiconductors Product specification HF/VHF power transistor BLW78 handbook, full pagewidth C5 L4 L2 C2 output 50 Ω C4 L5 C1 L1 input 50 Ω C8 L3 C7 C3 aluminium heatsink MGP549 Fig.8 Component layout on an aluminium heatsink for 150 MHz test circuit. ⊗ Earthing bolts. August 1986 7 Philips Semiconductors Product specification HF/VHF power transistor BLW78 MGP551 MGP550 150 100 10 handbook, halfpage handbook, halfpage PL (W) η Gp (dB) η (%) Gp 100 typ 50 5 50 0 0 0 20 0 40 PS (W) VCE = 28 V; f = 150 MHz; Th = 25 °C. Fig.9 handbook, halfpage PLnom (W) (VSWR = 1) 100 Th ≤ 70 °C ≤ 90 °C 50 0 1 10 VSWR 102 The graph shows the permissible output power under nominal conditions (VSWR = 1) as a function of the expected VSWR during short-time mismatch conditions with heatsink temperatures as parameter. Fig.11 R.F. SOAR; c.w. class-B operation; f = 150 MHz; VCE = 28 V; Rth mb-h = 0,2 K/W. August 1986 100 PL (W) 0 150 Fig.10 VCE = 28 V; f = 150 MHz; Th = 25 °C; typical values. MGP552 150 50 8 Philips Semiconductors Product specification HF/VHF power transistor BLW78 OPERATING NOTE Below 50 MHz a base-emitter resistor of 4,7 Ω is recommended to avoid oscillation. This resistor must be effective for r.f. only. MGP553 3 ri, xi handbook, halfpage (Ω) 2 xi 1 ri 0 ri xi −1 −2 −3 0 100 f (MHz) 200 VCE = 28 V; PL = 100 W; Th = 25 °C; typical values; class-B operation. Fig.12 Input impedance (series components). MGP554 6 MGP555 30 handbook, halfpage handbook, halfpage RL, XL (Ω) Gp (dB) 4 20 RL typ 2 10 XL 0 0 0 100 f (MHz) 200 0 VCE = 28 V; PL = 100 W; Th = 25 °C; typical values; class-B operation. VCE = 28 V; PL = 100 W; Th = 25 °C; typical values; class-B operation. Fig.13 Load impedance (series components). August 1986 100 Fig.14 9 f (MHz) 200 Philips Semiconductors Product specification HF/VHF power transistor BLW78 R.F. performance in s.s.b. class-A operation VCE = 26 V; Th = 40 °C; f1 = 28,000 MHz; f2 = 28,001 MHz OUTPUT POWER W Gp dB IC A d3 dB 35 (P.E.P.) typ. 19,5 3 typ. −40 C10 handbook, full pagewidth C1 C11 L5 50 Ω C2 L1 50 Ω L2 T.U.T. R5 L4 L3 C8 C12 C4 C3 R3 R2 C5 R7 R4 +VCC C6 R6 C9 BY206 C7 BD136 C14 R8 R1 MGP556 Fig.15 Test circuit; s.s.b. class-A; f = 28 MHz. August 1986 10 C13 Philips Semiconductors Product specification HF/VHF power transistor BLW78 List of components: C1 = 33 pF ceramic capacitor (500 V) C2 = 100 pF air dielectric trimmer (single insulated rotor type) C3 = 280 pF air dielectric trimmer (single non-insulated rotor type) C4 = 180 pF polystyrene capacitor C5 = C6 = C7 = 3,9 nF ceramic capacitor C8 = 2 × 33 pF ceramic capacitors in parallel (500 V) C9 = 330 nF polyester capacitor C10 = 82 pF ceramic capacitor (500 V) C11 = 100 pF air dielectric trimmer (single insulated rotor type) C12 = 180 pF air dielectric trimmer (single non-insulated rotor type) C13 = 150 pF polystyrene capacitor C14 = 390 nF polyester capacitor L1 = 72 nH; 3 turns Cu wire (1,0 mm); int. dia. 7 mm; length 4,8 mm; leads 2 × 5 mm L2 = Cu strip (28 mm × 5 mm × 0,2 mm); 18 mm at 3 mm above printed-circuit board L3 = Ferroxcube choke coil (cat. no. 4312 020 36640) L4 = 300 nH; 6 turns Cu wire (1,5 mm); int. dia. 12 mm; length 16 mm; leads 2 × 5 mm L5 = 330 nH; 7 turns Cu wire (1,5 mm); int. dia. 12 mm; length 20,8 mm; leads 2 × 5 mm R1 = 1,5 kΩ (± 5%) carbon resistor (0,5 W) R2 = 100 Ω (± 5%) carbon resistor (0,5 W) R3 = 68 Ω (± 5%) carbon resistor (0,5 W) R4 = 100 Ω wirewound potentiometer R5 = 33 Ω (± 5%) carbon resistor (0,5 W) R6 = 0,68 Ω (± 10%) wirewound resistor (7 W) R7 = 120 Ω wirewound resistor (8 W) R8 = 10 Ω (± 10%) carbon resistor (0,5 W) August 1986 11 Philips Semiconductors Product specification HF/VHF power transistor BLW78 MGP557 −30 handbook, halfpage d3 (dB) typ −40 −50 −60 0 25 P.E.P. (W) 50 Fig.16 Intermodulation distortion as a function of output power; VCE = 26 V; IC = 3 A; f1 = 28,000 MHz; f2 = 28,001 MHz; Th = 40 °C. August 1986 12 Philips Semiconductors Product specification HF/VHF power transistor BLW78 R.F. performance in s.s.b. class-AB operation (linear power amplifier) VCE = 28 V; Th = 25 °C; f1 = 28,000 MHz; f2 = 28,001 MHz OUTPUT POWER W Gp dB ηdt % IC A d3(1) dB d5(1) dB IC(ZS) mA 100 (P.E.P.) typ. 19 typ. 42 typ. 4,3 typ. −30 typ. −37 50 Note 1. Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones. Relative to the according peak envelope powers these figures should be increased by 6 dB. C10 handbook, full pagewidth L3 C1 50 Ω 50 Ω C11 L1 T.U.T. C2 C3 C4 L2 C7 R1 L4 C12 C13 C5 C8 temperature compensated bias (Ri < 0.1 Ω) C6 C9 R2 +VCC MGP558 Fig.17 Test circuit; s.s.b. class-AB; f = 28 MHz. List of components: C1 = C11 = 150 pF air dielectric trimmer (single insulated rotor type) C2 = 27 pF ceramic capacitor (500 V) C3 = C12 = 150 pF air dielectric trimmer (single non-insulated rotor type) C4 = 180 pF ceramic capacitor (500 V) C5 = C8 = 3,9 nF ceramic capacitor C6 = 150 µF/6 V solid tantalum capacitor C7 = 150 pF ceramic capacitor (500 V) C9 = 100 nF polyester capacitor C10 = 750 pF mica dielectric trimmer (single insulated rotor type) C13 = 750 pF mica dielectric trimmer (single non-insulated rotor type) L1 = 3 turns enamelled Cu wire (1,0 mm); int. dia. 12 mm; length 12 mm L2 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640) L3 = 3 turns enamelled Cu wire (2,0 mm); int. dia. 12 mm; length 12 mm L4 = 2 turns enamelled Cu wire (2,0 mm); int. dia. 12 mm; length 8 mm R1 = 27 Ω (± 10%) carbon resistor (0,5 W) R2 = 4,7 Ω (± 10%) carbon resistor (0,5 W) August 1986 13 Philips Semiconductors Product specification HF/VHF power transistor BLW78 MGP559 −20 handbook, halfpage d3, d5 (dB) −30 d3 −40 d5 −50 0 50 P.E.P. (W) 100 Typical values; VCE = 28 V; IC(ZS) = 50 mA; f1 = 28,000 MHz; f2 = 28,001 MHz; Th = 25 °C. Fig.18 Intermodulation distortion(1) as a function of output power. MGP561 10 handbook, halfpage MGP560 30 xi ri (Ω) handbook, halfpage 0 xi (Ω) Gp (dB) 20 −5 5 10 ri 0 1 0 1 10 f (MHz) 10 f (MHz) −10 102 VCE = 28 V; IC(ZS) = 50 mA; PL = 100 W (P.E.P.); Th = 25 °C; ZL = 2,7 Ω. 102 Fig.20 Input impedance (series components). VCE = 28 V; IC(ZS) = 50 mA; PL = 100 W (P.E.P.); Th = 25 °C; ZL = 2,7 Ω. Fig.19 Power gain as a function of frequency. Figs 19 and 20 are typical curves and hold for an unneutralized amplifier in s.s.b. class-AB operation. August 1986 14 Philips Semiconductors Product specification HF/VHF power transistor BLW78 PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 4 leads SOT121B D A F q C B U1 c H b L 4 α w2 M C 3 A D1 U2 p U3 w1 M A B 1 2 H Q 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 7.27 6.17 5.82 5.56 0.16 0.10 inches 0.286 0.243 0.229 0.006 0.219 0.004 OUTLINE VERSION D D1 12.86 12.83 12.59 12.57 F H L p Q q U1 U2 U3 w1 w2 2.67 2.41 28.45 25.52 7.93 6.32 3.30 3.05 4.45 3.91 18.42 24.90 24.63 6.48 6.22 12.32 12.06 0.51 1.02 0.175 0.725 0.154 0.98 0.97 0.255 0.245 0.485 0.475 0.02 0.04 0.506 0.505 0.105 1.120 0.496 0.495 0.095 1.005 45° 0.312 0.130 0.249 0.120 REFERENCES IEC JEDEC EIAJ SOT121B August 1986 α EUROPEAN PROJECTION ISSUE DATE 97-06-28 15 Philips Semiconductors Product specification HF/VHF power transistor BLW78 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. August 1986 16