PHILIPS BLW78

DISCRETE SEMICONDUCTORS
DATA SHEET
BLW78
HF/VHF power transistor
Product specification
August 1986
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW78
It has a 1⁄2" flange envelope with a
ceramic cap. All leads are isolated
from the flange.
DESCRIPTION
N-P-N silicon planar epitaxial
transistor intended for use in class-A,
AB or B operated mobile, industrial
and military transmitters in the h.f.
and v.h.f. bands. It is resistance
stabilized and is guaranteed to
withstand severe load mismatch
conditions.
QUICK REFERENCE DATA
R.F. performance up to Th = 25 °C
MODE OF OPERATION
VCE
V
IC
IC(ZS)
A
f
MHz
−
150
PL
W
100
η
%
Gp
dB
>
>
6
70
d3(1)
dB
−
c.w. (class-B)
28
s.s.b. (class-A)
26
3
28
35 (P.E.P.)
typ. 19,5
−
typ. −40
s.s.b. (class-AB)
28
0,05
28
100 (P.E.P.)
typ. 19,0
typ. 42
typ. −30
Note
1. Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones.
Relative to the according peak envelope powers these figures should be increased by 6 dB.
PIN CONFIGURATION
PINNING - SOT121B.
PIN
handbook, halfpage 4
1
3
DESCRIPTION
1
collector
2
emitter
3
base
4
emitter
2
MLA876
Fig.1 Simplified outline. SOT121B.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
August 1986
2
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW78
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage (VBE = 0)
peak value
VCESM
max.
70 V
Collector-emitter voltage (open base)
VCEO
max.
35 V
Emitter-base voltage (open collector)
VEBO
max.
4 V
Collector current (average)
IC(AV)
max.
10 A
Collector current (peak value); f > 1 MHz
ICM
max.
25 A
R.F. power dissipation (f > 1 MHz); Tmb = 25 °C
Prf
max.
160 W
Storage temperature
Tstg
Operating junction temperature
Tj
MGP543
102
handbook, halfpage
−65 to +150 °C
max.
200 °C
MGP544
200
handbook, halfpage
Prf
(W)
IC
(A)
150
ΙΙΙ
10
derate by 0.79 W/K
ΙΙ
Th = 70 °C
Tmb = 25 °C
100
derate by
0.61 W/K
Ι
1
1
10
VCE (V)
50
102
0
50
Th (°C)
100
I Continuous d.c. operation
II Continuous r.f. operation
III Short-time operation during mismatch
Fig.3 R.F. power dissipation; VCE ≤ 28 V; f > 1 MHz.
Fig.2 D.C. SOAR.
THERMAL RESISTANCE
(dissipation = 80 W; Tmb = 86 °C; i.e. Th = 70 °C)
From junction to mounting base (d.c. dissipation)
Rth j-mb(dc)
=
1,45 K/W
From junction to mounting base (r.f. dissipation)
Rth j-mb(rf)
=
1,06 K/W
From mounting base to heatsink
Rth mb-h
=
0,2 K/W
August 1986
3
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW78
CHARACTERISTICS
Tj = 25 °C
Collector-emitter breakdown voltage
V(BR)CES
>
70 V
V(BR)CEO
>
35 V
V(BR)EBO
>
4 V
ICES
<
5 mA
hFE
20 to 85
VCEsat
typ.
−IE = 5 A; VCB = 28 V
fT
typ. 370 MHz
−IE = 15 A; VCB = 28 V
fT
typ. 350 MHz
Cc
typ. 155 pF
IC = 100 mA; VCE = 28 V
Cre
typ. 102 pF
Collector-flange capacitance
Ccf
typ.
VBE = 0; IC = 50 mA
Collector-emitter breakdown voltage
open base; IC = 100 mA
Emitter-base breakdown voltage
open collector; IE = 5 mA
Collector cut-off current
VBE = 0; VCE = 35 V
D.C. current
gain(1)
IC = 5 A; VCE = 5 V
Collector-emitter saturation voltage
IC = 15 A; IB = 3 A
Transition frequency at f = 100
2 V
MHz(2)
Collector capacitance at f = 1 MHz
IE = Ie = 0; VCB = 28 V
Feedback capacitance at f = 1 MHz
Notes
1. Measured under pulse conditions: tp ≤ 300 µs; δ ≤ 0,02.
2. Measured under pulse conditions: tp ≤ 50 µs; δ ≤ 0,01.
August 1986
4
3 pF
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW78
MGP545
75
MGP546
600
handbook, halfpage
handbook, halfpage
VCE = 28 V
hFE
Cc
(pF)
50
400
5V
typ
25
200
0
0
5
IC (A)
0
10
0
Fig.4 Typical values; Tj = 25 °C.
20
VCB (V)
40
Fig.5 IE = Ie = 0; f = 1 MHz; Tj = 25 °C.
MGP547
750
handbook, full pagewidth
fT
(MHz)
500
VCB = 28 V
20 V
250
0
0
5
10
15
Fig.6 Typical values; f = 100 MHz; Tj = 25 °C.
August 1986
5
20
−IE (A)
25
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW78
APPLICATION INFORMATION
R.F. performance in c.w. operation (unneutralized common-emitter class-B circuit); Th = 25 °C
f (MHz)
VCE (V)
PL (W)
PD (W)
η (%)
zi (Ω)
ZL (Ω)
150
28
100
≤ 25
≥ 70
0,74 + j1,35
4,30 + j0,60
L5
handbook, full pagewidth
C1
L1
50 Ω
L3
C4
C2
L2
C8
50 Ω
T.U.T.
L4
C7
C3
C5
C6
+VCC
MGP548
Fig.7 Test circuit; c.w. class-B; f = 150 MHz.
List of components:
C1 = C2 = C7 = C8 = 5 to 100 pF film dielectric trimmer
C3 = 203 pF; 2 × 82 pF and 39 pF multilayer ceramic chip capacitors (500 V, ATC(1)) in parallel
C4 = 39 pF multilayer ceramic chip capacitor (500 V, ATC(1))
C5 = 1 nF feed-through capacitor
C6 = 100 nF polyester capacitor
L1 = strip (30 mm × 8 mm); bent to form inverted ‘U’ shape with top 15 mm above heatsink, and bottom 5 mm above
heatsink
L2 = 1 µH r.f. choke
L3 = strip; shape as shown in Fig.8; 5 mm above heatsink
L4 = strip (40 mm × 8 mm); bent in form
, 25 mm at 15 mm above heatsink, 5 mm at 5 mm above heatsink
L5 = strip (75 mm long; width 8 mm); 5 mm above base
L1, L3, L4, and L5 are copper strips with a thickness of 0,6 mm.
Heatsink: aluminium; 0,9 K/W
At PL = 100 W and VCE = 28 V, the output power at heatsink temperatures between 25 °C and 90 °C relative to that at
25 °C is diminished by typ. 0,12 W/K.
Component layout on an aluminium heatsink for 150 MHz test circuit is shown in Fig.8.
Note
1. ATC means American Technical Ceramics.
August 1986
6
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW78
handbook, full pagewidth
C5
L4
L2
C2
output
50 Ω
C4
L5
C1
L1
input
50 Ω
C8
L3
C7
C3
aluminium heatsink
MGP549
Fig.8 Component layout on an aluminium heatsink for 150 MHz test circuit. ⊗ Earthing bolts.
August 1986
7
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW78
MGP551
MGP550
150
100
10
handbook, halfpage
handbook, halfpage
PL
(W)
η
Gp
(dB)
η
(%)
Gp
100
typ
50
5
50
0
0
0
20
0
40
PS (W)
VCE = 28 V; f = 150 MHz; Th = 25 °C.
Fig.9
handbook, halfpage
PLnom
(W)
(VSWR = 1)
100
Th ≤ 70 °C
≤ 90 °C
50
0
1
10
VSWR
102
The graph shows the permissible output power
under nominal conditions (VSWR = 1) as a
function of the expected VSWR during short-time
mismatch conditions with heatsink temperatures
as parameter.
Fig.11 R.F. SOAR; c.w. class-B operation;
f = 150 MHz; VCE = 28 V;
Rth mb-h = 0,2 K/W.
August 1986
100
PL (W)
0
150
Fig.10 VCE = 28 V; f = 150 MHz; Th = 25 °C;
typical values.
MGP552
150
50
8
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW78
OPERATING NOTE
Below 50 MHz a base-emitter resistor of 4,7 Ω is
recommended to avoid oscillation. This resistor must be
effective for r.f. only.
MGP553
3
ri, xi
handbook, halfpage
(Ω)
2
xi
1
ri
0
ri
xi
−1
−2
−3
0
100
f (MHz)
200
VCE = 28 V; PL = 100 W; Th = 25 °C;
typical values; class-B operation.
Fig.12 Input impedance (series components).
MGP554
6
MGP555
30
handbook, halfpage
handbook, halfpage
RL, XL
(Ω)
Gp
(dB)
4
20
RL
typ
2
10
XL
0
0
0
100
f (MHz)
200
0
VCE = 28 V; PL = 100 W; Th = 25 °C;
typical values; class-B operation.
VCE = 28 V; PL = 100 W; Th = 25 °C;
typical values; class-B operation.
Fig.13 Load impedance (series components).
August 1986
100
Fig.14
9
f (MHz)
200
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW78
R.F. performance in s.s.b. class-A operation
VCE = 26 V; Th = 40 °C; f1 = 28,000 MHz; f2 = 28,001 MHz
OUTPUT POWER
W
Gp
dB
IC
A
d3
dB
35 (P.E.P.)
typ. 19,5
3
typ. −40
C10
handbook, full pagewidth
C1
C11
L5
50 Ω
C2
L1
50 Ω
L2
T.U.T.
R5
L4
L3
C8
C12
C4
C3
R3
R2
C5
R7
R4
+VCC
C6
R6
C9
BY206
C7
BD136
C14
R8
R1
MGP556
Fig.15 Test circuit; s.s.b. class-A; f = 28 MHz.
August 1986
10
C13
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW78
List of components:
C1 = 33 pF ceramic capacitor (500 V)
C2 = 100 pF air dielectric trimmer (single insulated rotor type)
C3 = 280 pF air dielectric trimmer (single non-insulated rotor type)
C4 = 180 pF polystyrene capacitor
C5 = C6 = C7 = 3,9 nF ceramic capacitor
C8 = 2 × 33 pF ceramic capacitors in parallel (500 V)
C9 = 330 nF polyester capacitor
C10 = 82 pF ceramic capacitor (500 V)
C11 = 100 pF air dielectric trimmer (single insulated rotor type)
C12 = 180 pF air dielectric trimmer (single non-insulated rotor type)
C13 = 150 pF polystyrene capacitor
C14 = 390 nF polyester capacitor
L1 = 72 nH; 3 turns Cu wire (1,0 mm); int. dia. 7 mm; length 4,8 mm; leads 2 × 5 mm
L2 = Cu strip (28 mm × 5 mm × 0,2 mm); 18 mm at 3 mm above printed-circuit board
L3 = Ferroxcube choke coil (cat. no. 4312 020 36640)
L4 = 300 nH; 6 turns Cu wire (1,5 mm); int. dia. 12 mm; length 16 mm; leads 2 × 5 mm
L5 = 330 nH; 7 turns Cu wire (1,5 mm); int. dia. 12 mm; length 20,8 mm; leads 2 × 5 mm
R1 = 1,5 kΩ (± 5%) carbon resistor (0,5 W)
R2 = 100 Ω (± 5%) carbon resistor (0,5 W)
R3 = 68 Ω (± 5%) carbon resistor (0,5 W)
R4 = 100 Ω wirewound potentiometer
R5 = 33 Ω (± 5%) carbon resistor (0,5 W)
R6 = 0,68 Ω (± 10%) wirewound resistor (7 W)
R7 = 120 Ω wirewound resistor (8 W)
R8 = 10 Ω (± 10%) carbon resistor (0,5 W)
August 1986
11
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW78
MGP557
−30
handbook, halfpage
d3
(dB)
typ
−40
−50
−60
0
25
P.E.P. (W)
50
Fig.16 Intermodulation distortion as a function of
output power; VCE = 26 V; IC = 3 A;
f1 = 28,000 MHz; f2 = 28,001 MHz;
Th = 40 °C.
August 1986
12
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW78
R.F. performance in s.s.b. class-AB operation (linear power amplifier)
VCE = 28 V; Th = 25 °C; f1 = 28,000 MHz; f2 = 28,001 MHz
OUTPUT POWER
W
Gp
dB
ηdt
%
IC
A
d3(1)
dB
d5(1)
dB
IC(ZS)
mA
100 (P.E.P.)
typ. 19
typ. 42
typ. 4,3
typ. −30
typ. −37
50
Note
1. Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones.
Relative to the according peak envelope powers these figures should be increased by 6 dB.
C10
handbook, full pagewidth
L3
C1
50 Ω
50 Ω
C11
L1
T.U.T.
C2
C3
C4
L2
C7
R1
L4
C12
C13
C5
C8
temperature
compensated bias
(Ri < 0.1 Ω)
C6
C9
R2
+VCC
MGP558
Fig.17 Test circuit; s.s.b. class-AB; f = 28 MHz.
List of components:
C1 = C11 = 150 pF air dielectric trimmer (single insulated rotor type)
C2 = 27 pF ceramic capacitor (500 V)
C3 = C12 = 150 pF air dielectric trimmer (single non-insulated rotor type)
C4 = 180 pF ceramic capacitor (500 V)
C5 = C8 = 3,9 nF ceramic capacitor
C6 = 150 µF/6 V solid tantalum capacitor
C7 = 150 pF ceramic capacitor (500 V)
C9 = 100 nF polyester capacitor
C10 = 750 pF mica dielectric trimmer (single insulated rotor type)
C13 = 750 pF mica dielectric trimmer (single non-insulated rotor type)
L1 = 3 turns enamelled Cu wire (1,0 mm); int. dia. 12 mm; length 12 mm
L2 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640)
L3 = 3 turns enamelled Cu wire (2,0 mm); int. dia. 12 mm; length 12 mm
L4 = 2 turns enamelled Cu wire (2,0 mm); int. dia. 12 mm; length 8 mm
R1 = 27 Ω (± 10%) carbon resistor (0,5 W)
R2 = 4,7 Ω (± 10%) carbon resistor (0,5 W)
August 1986
13
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW78
MGP559
−20
handbook, halfpage
d3, d5
(dB)
−30
d3
−40
d5
−50
0
50
P.E.P. (W)
100
Typical values; VCE = 28 V; IC(ZS) = 50 mA;
f1 = 28,000 MHz; f2 = 28,001 MHz;
Th = 25 °C.
Fig.18 Intermodulation distortion(1) as a function of
output power.
MGP561
10
handbook, halfpage
MGP560
30
xi
ri
(Ω)
handbook, halfpage
0
xi
(Ω)
Gp
(dB)
20
−5
5
10
ri
0
1
0
1
10
f (MHz)
10
f (MHz)
−10
102
VCE = 28 V; IC(ZS) = 50 mA; PL = 100 W (P.E.P.);
Th = 25 °C; ZL = 2,7 Ω.
102
Fig.20 Input impedance (series components).
VCE = 28 V; IC(ZS) = 50 mA; PL = 100 W (P.E.P.);
Th = 25 °C; ZL = 2,7 Ω.
Fig.19 Power gain as a function of frequency.
Figs 19 and 20 are typical curves and hold for an
unneutralized amplifier in s.s.b. class-AB operation.
August 1986
14
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW78
PACKAGE OUTLINE
Flanged ceramic package; 2 mounting holes; 4 leads
SOT121B
D
A
F
q
C
B
U1
c
H
b
L
4
α
w2 M C
3
A
D1
U2
p
U3
w1 M A B
1
2
H
Q
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
mm
7.27
6.17
5.82
5.56
0.16
0.10
inches
0.286
0.243
0.229 0.006
0.219 0.004
OUTLINE
VERSION
D
D1
12.86 12.83
12.59 12.57
F
H
L
p
Q
q
U1
U2
U3
w1
w2
2.67
2.41
28.45
25.52
7.93
6.32
3.30
3.05
4.45
3.91
18.42
24.90
24.63
6.48
6.22
12.32
12.06
0.51
1.02
0.175
0.725
0.154
0.98
0.97
0.255
0.245
0.485
0.475
0.02
0.04
0.506 0.505 0.105 1.120
0.496 0.495 0.095 1.005
45°
0.312 0.130
0.249 0.120
REFERENCES
IEC
JEDEC
EIAJ
SOT121B
August 1986
α
EUROPEAN
PROJECTION
ISSUE DATE
97-06-28
15
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW78
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
August 1986
16