PHILIPS BLW76

DISCRETE SEMICONDUCTORS
DATA SHEET
BLW76
HF/VHF power transistor
Product specification
August 1986
Philips Semiconductors
Product specification
HF/VHF power transistor
DESCRIPTION
N-P-N silicon planar epitaxial
transistor intended for use in class-AB
or class-B operated high power
transmitters in the h.f. and v.h.f.
bands. The transistor presents
excellent performance as a linear
amplifier in the h.f. band. It is
resistance stabilized and is
guaranteed to withstand severe load
BLW76
mismatch conditions. Transistors are
delivered in matched hFE groups.
The transistor has a 1⁄2" flange
envelope with a ceramic cap. All
leads are isolated from the flange.
QUICK REFERENCE DATA
R.F. performance up to Th = 25 °C
MODE OF OPERATION
VCE
V
IC(ZS)
A
f
MHz
PL
W
Gp
dB
s.s.b. (class-AB)
28
0,05
1,6 − 28
8 − 80 (P.E.P.)
> 13
c.w. (class-B)
28
−
108
80
typ. 7,9
η
%
>
35(1)
d3
dB
< −30
typ. 70
−
Note
1. At 80 W P.E.P.
PIN CONFIGURATION
PINNING - SOT121B.
PIN
handbook, halfpage 4
1
3
DESCRIPTION
1
collector
2
emitter
3
base
4
emitter
2
MLA876
Fig.1 Simplified outline. SOT121B.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
August 1986
2
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW76
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage (VBE = 0)
peak value
VCESM
max.
70 V
Collector-emitter voltage (open base)
VCEO
max.
35 V
Emitter-base voltage (open collector)
VEBO
max.
4 V
Collector current (average)
IC(AV)
max.
8 A
Collector current (peak value); f > 1 MHz
ICM
max.
20 A
R.F. power dissipation (f > 1 MHz); Tmb = 25 °C
Prf
max.
140 W
Storage temperature
Tstg
Operating junction temperature
Tj
MGP499
−65 to + 150 °C
max.
MGP500
200
10
200 °C
handbook, halfpage
handbook, halfpage
ΙΙΙ
Prf
(W)
IC
(A)
150
ΙΙ
Th = 70 °C
Tmb = 25 °C
derate by 0.77 W/K
100
Ι
derate by 0.56 W/K
50
1
1
10
VCE (V)
0
102
0
50
Th (°C)
100
I Continuous d.c. operation
II Continuous r.f. operation
III Short-time operation during mismatch
Fig.2 D.C. SOAR.
Fig.3
R.F. power dissipation; VCE ≤ 28 V; f > 1 MHz.
THERMAL RESISTANCE
(dissipation = 60 W; Tmb = 82 °C, i.e. Th = 70 °C)
From junction to mounting base (d.c. dissipation)
Rth j-mb(dc)
=
1,92 K/W
From junction to mounting base (r.f. dissipation)
Rth j-mb(rf)
=
1,33 K/W
From mounting base to heatsink
Rth mb-h
=
0,2 K/W
August 1986
3
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW76
CHARACTERISTICS
Tj = 25 °C unless otherwise specified
Collector-emitter breakdown voltage
VBE = 0; IC = 50 mA
V(BR) CES
>
70 V
V(BR) CEO
>
35 V
V(BR)EBO
>
4 V
ICES
<
10 mA
Collector-emitter breakdown voltage
open base; IC = 50 mA
Emitter-base breakdown voltage
open collector; IE = 10 mA
Collector cut-off current
VBE = 0; VCE = 35 V
D.C. current
gain(1)
IC = 4 A; VCE = 5 V
hFE
15 to 80
D.C. current grain ratio of matched devices(1)
hFE1/hFE2
<
1,2
VCEsat
typ.
2,5 V
−IE = 4 A; VCB = 28 V
fT
typ.
315 MHz
−IE = 12,5 A; VCB = 28 V
fT
typ.
305 MHz
Cc
typ.
125 pF
IC = 50 mA; VCE = 28 V
Cre
typ.
85 pF
Collector-flange capacitance
Ccf
typ.
3 pF
IC = 4 A; VCE = 5 V
Collector-emitter saturation
voltage(1)
IC = 12,5 A; IB = 2,5 A
Transition frequency at f = 100
MHz(2)
Collector capacitance at f = 1 MHz
IE = Ie = 0; VCB = 28 V
Feedback capacitance at f = 1 MHz
Notes
1. Measured under pulse conditions: tp ≤ 300 µs; δ ≤ 0,02.
2. Measured under pulse conditions: tp ≤ 50 µs; δ ≤ 0,01.
MGP501
10
handbook, halfpage
IC
(A)
Th = 70 °C
1
25 °C
10−1
Fig.4 Typical values; VCE = 20 V.
August 1986
10−2
0.5
4
1
1.5
VBE (V)
2
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW76
MGP502
60
MGP503
600
handbook, halfpage
handbook, halfpage
VCE = 28 V
hFE
Cc
(pF)
40
400
5V
20
200
typ
0
0
0
10
IC (A)
20
0
Fig.5 Typical values; Tj = 25 °C.
20
VCB (V)
40
Fig.6 IE = Ie = 0; f = 1 MHz; Tj = 25 °C.
MGP504
600
handbook, full pagewidth
fT
(MHz)
400
typ
200
0
0
5
10
Fig.7 VCB = 28 V; f = 100 MHz; Tj = 25 °C.
August 1986
5
15
−IE (A)
20
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW76
APPLICATION INFORMATION
R.F. performance in s.s.b. class-AB operation (linear power amplifier)
VCE = 28 V; Th = 25 °C; f1 = 28,000 MHz; f2 = 28,001 MHz
ηdt (%)
OUTPUT POWER
Gp
W
dB
8 to 80 (P.E.P.)
> 13
handbook, full pagewidth
IC (A)
d3
d5
IC(ZS)
dB
dB
A
< −30
< −30
0,05
at 80 W P.E.P.
> 35
< 4,1
C1
L5
50 Ω
C2
L1
50 Ω
R3
C14
T.U.T.
R6
C3
L3
L2
C11
C5
C8
C9
C7
C10
R1
R7
L4
R4
+VCC
BD228
C6
BD443
C4
R2
R5
MGP505
Fig.8 Test circuit; s.s.b. class-AB.
August 1986
C13
6
C12
C15
C16
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW76
List of components:
C1
=
27 pF ceramic capacitor (500 V)
C2
=
100 pF air dielectric trimmer (single insulated rotor type)
C3
=
100 pF polystyrene capacitor
C4
=
C6 = C9 = 100 nF polyester capacitor
C5
=
280 pF air dielectric trimmer (single non-insulated rotor type)
C7
=
C8 = 3,9 nF ceramic capacitor
C10
=
2,2 µF moulded metallized polyester capacitor
C11
=
180 pF polystyrene capacitor
C12
=
2 × 68 pF ceramic capacitors in parallel (500 V)
C13
=
120 pF polystyrene capacitor
C14
=
C15 = 280 pF air dielectric trimmer (single insulated rotor type)
C16
=
56 pF ceramic capacitor (500 V)
L1
=
108 nH; 4 turns Cu wire (1,6 mm); int. dia. 8,7 mm; length 11,2 mm; leads 2 × 7 mm
L2
=
L4 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640)
L3
=
88 nH; 3 turns Cu wire (1,6 mm); int. dia. 8,0 mm; length 8,0 mm; leads 2 × 7 mm
L5
=
120 nH; 4 turns Cu wire (1,6 mm); int. dia. 9,3 mm; length 11,2 mm; leads 2 × 7 mm
R1
=
1,5 kΩ (± 5%) carbon resistor (0,5 W)
R2
=
10 Ω wirewound potentiometer (3 W)
R3
=
0,9 Ω; parallel connection of 2 × 1,8 Ω carbon resistors (± 5%; 0,5 W each)
R4
=
60 Ω; parallel connection of 2 × 120 Ω wirewound resistors (5,5 W each)
R5
=
56 Ω (± 5%) carbon resistor (0,5 W)
R6
=
33 Ω (± 5%) carbon resistor (0,5 W)
R7
=
4,7 Ω (± 5%) carbon resistor (0,5 W)
August 1986
7
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW76
MGP506
−20
handbook, halfpage
MGP507
60
d3, d5
handbook, halfpage
(dB)
ηdt
(%)
−30
Gp
(dB)
40
−40
20
d3
Gp
d5
ηdt
20
−50
0
50
P.E.P. (W)
10
100
0
VCE = 28 V; IC(ZS) = 50 mA; f1 = 28,000 MHz;
f2 = 28,001 MHz; Th = 25 °C; typical values.
Fig.9
0
Intermodulation distortion as a function of
output power.(1.)
50
P.E.P. (W)
0
100
VCE = 28 V; IC(ZS) = 50 mA; f1 = 28,000 MHz;
f2 = 28,001 MHz; Th = 25 °C; typical values.
1. Stated intermodulation distortion figures are referred
to the according level of either of the equal amplified
tones. Relative to the according peak envelope
powers these figures should be increased by 6 dB.
Fig.10 Double-tone efficiency and power gain as a
function of output power.
MGP509
10
handbook, halfpage
ri
MGP508
40
30
2.5
xi
(Ω)
(Ω)
handbook, halfpage
0
7.5
Gp
(dB)
xi
30
−2.5
5
20
−5
2.5
ri
10
0
1
0
1
10
f (MHz)
10
f (MHz)
−7.5
102
VCE = 28 V; IC(ZS) = 50 mA; PL = 80 W;
Th 25 °C; ZL = 3,9 Ω.
102
VCE = 28 V; IC(ZS) = 50 mA; PL = 80 W;
Th 25 °C; ZL = 3,9 Ω.
Fig.12 Input impedance (series components) as a
function of frequency.
Fig.11 Power gain as a function of frequency.
Figs 11 and 12 are typical curves and hold for an
unneutralized amplifier in s.s.b. class-AB operation.
August 1986
8
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW76
MGP510
40
MGP511
20
handbook, halfpage
handbook, halfpage
Gp
(dB)
ri
xi
(Ω)
(Ω)
30
15
20
10
10
5
2.5
0
xi
−2.5
−5
ri
0
1
10
f (MHz)
0
102
1
VCE = 28 V; IC(ZS) = 50 mA; PL = 80 W; Th = 25 °C;
ZL = 3,9 Ω; neutralizing capacitor: 68 pF.
10
f (MHz)
−7.5
102
VCE = 28 V; IC(ZS) = 50 mA; PL = 80 W; Th = 25 °C;
ZL = 3,9 Ω; neutralizing capacitor: 68 pF.
Fig.13 Power gain as a function of frequency.
Fig.14 Input impedance (series components) as a
function of frequency.
Figs 13 and 14 are typical curves and hold for a push-pull
amplifier with cross-neutralization in s.s.b. class-AB
operation.
MGP512
150
handbook, halfpage
PLnom
(W P.E.P.)
(VSWR = 1)
Th ≤ 50 °C
100
70 °C
90 °C
50
1
10
VSWR
The graph shows the permissible output
power under nominal conditions (VSWR = 1)
as a function of the expected VSWR during
short-time mismatch conditions with heatsink
temperatures as parameter.
Fig.15 R.F. SOAR; s.s.b. class-AB operation;
f1 = 28,000 MHz; f2 = 28,001 MHz;
VCE = 28 V; Rth mb-h = 0,2 K/W.
August 1986
9
102
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW76
R.F. performance in c.w. operation (unneutralized common-emitter class-B circuit); Th = 25 °C
f (MHz)
VCE (V)
PL (W)
PS (W)
Gp (dB)
IC (A)
η (%)
zi (Ω)
YL (mS)
108
28
80
typ. 13
typ. 7,9
typ. 4,1
typ. 70
0,85 + j1,0
174 − j40
handbook, full pagewidth
,,
,, ,,
C8
L5
C1
L1
50 Ω
C3
50 Ω
L2
T.U.T.
C2
C9
L8
L6
C4ab
C7ab
C10
C11
L4
C6
C5
L3
R2
R1
L7
+VCC
MGP513
Fig.16 Test circuit; c.w. class-B.
List of components:
C1
= C9 = C10 = 4 to 40 pF film dielectric trimmer (cat. no. 2222 809 07008)
C2
= 5 to 60 pF film dielectric trimmer (cat. no. 2222 809 07011)
C3
= 22 pF ceramic capacitor (500 V)
C4ab
= 2 × 82 pF ceramic capacitors in parallel (500 V)
C5
= 270 pF polystyrene capacitor
C6
= 100 nF polyester capacitor
C7a
= 8,2 pF ceramic capacitor (500 V)
C7b
= 10 pF ceramic capacitor (500 V)
C8
= 5,6 pF ceramic capacitor (500 V)
C11
= 10 pF ceramic capacitor (500 V)
L1
= 21 nH; 2 turns Cu wire (1,0 mm); int. dia. 4,0 mm; length 3,5 mm; leads 2 × 5 mm
L2
= L5 = 2,4 nH; strip (12 mm × 6 mm); tap for L4 at 6 mm from transistor
L3
= L7 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640)
L4
= 100 nH; 7 turns closely wound enamelled Cu wire (0,5 mm); int. dia. 3 mm; leads 2 × 5 mm
L6
= 49 nH; 2 turns Cu wire (1,6 mm); int. dia. 9,0 mm; length 4,7 mm; leads 2 × 5 mm
L8
= 56 nH; 2 turns Cu wire (1,6 mm); int. dia. 10,0 mm; length 4,5 mm; leads 2 × 5 mm
L2 and L5 are strips on a double Cu-clad printed-circuit board with epoxy fibre-glass dielectric.
R1
= R2 = 10 Ω (± 10%) carbon resistor
Component layout and printed-circuit board for 108 MHz test circuit are shown in Fig.17.
August 1986
10
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW76
166
handbook, full pagewidth
70
L7
+VCC
L3
C3
C1
R1
C4a
C6
C5
L4
R2
L6 C7a
C2
C8
L2
L1
L5
rivet
C11
C10
L8
C4b
C9
C7b
strip
MGP514
Fig.17 Component layout and printed-circuit board for 108 MHz test circuit.
The circuit and the components are situated on one side of the epoxy fibre-glass board, the other side being fully
metallized to serve as earth. Earth connections are made by means of hollow rivets, whilst under the emitter leads Cu
straps are used for a direct contact between upper and lower sheets.
August 1986
11
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW76
MGP515
150
MGP516
10
handbook, halfpage
handbook, halfpage
PL
(W)
η
Gp
(dB)
Gp
100
η
(%)
typ
100
50
5
50
0
0
0
20
PS (W)
40
0
Fig.18 VCE = 28 V; f = 108 MHz; Th = 25 °C.
handbook, halfpage
PLnom
(W)
(VSWR = 1)
100
Th =
50 °C
70 °C
90 °C
50
1
10
VSWR
102
The graph shows the permissible output power
under nominal conditions (VSWR = 1) as a
function of the expected VSWR during short-time
mismatch conditions with heatsink temperatures
as parameter.
Fig.20 R.F. SOAR; c.w. class-B operation;
f = 108 MHz; VCE = 28 V; Rth mb-h = 0,2 K/W.
August 1986
100
PL (W)
0
150
Fig.19 VCE = 28 V; f = 108 MHz; Th = 25 °C; typical
values.
MGP517
150
50
12
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW76
MGP518
2
MGP519
7.5
handbook, halfpage
RL
RL
(Ω)
ri, xi
(Ω)
(nF)
5
ri
0.5
2.5
0.25
0
0
0.75
CL
0
CL
xi
−2.5
−0.25
−5
−2
−7.5
0
100
f (MHz)
200
Fig.21 VCE = 28 V; PL = 80 W; Th = 25 °C; typical
values.
handbook, halfpage
Gp
(dB)
20
typ
10
0
0
100
f (MHz)
200
Fig.23 VCE = 28 V; PL = 80 W; Th = 25 °C.
August 1986
0
100
f (MHz)
−0.75
200
Fig.22 VCE = 28 V; PL = 80 W; Th = 25 °C; typical
values.
MGP520
30
−0.5
13
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW76
PACKAGE OUTLINE
Flanged ceramic package; 2 mounting holes; 4 leads
SOT121B
D
A
F
q
C
B
U1
c
H
b
L
4
α
w2 M C
3
A
D1
U2
p
U3
w1 M A B
1
2
H
Q
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
mm
7.27
6.17
5.82
5.56
0.16
0.10
inches
0.286
0.243
0.229 0.006
0.219 0.004
OUTLINE
VERSION
D
D1
12.86 12.83
12.59 12.57
F
H
L
p
Q
q
U1
U2
U3
w1
w2
2.67
2.41
28.45
25.52
7.93
6.32
3.30
3.05
4.45
3.91
18.42
24.90
24.63
6.48
6.22
12.32
12.06
0.51
1.02
0.175
0.725
0.154
0.98
0.97
0.255
0.245
0.485
0.475
0.02
0.04
0.506 0.505 0.105 1.120
0.496 0.495 0.095 1.005
45°
0.312 0.130
0.249 0.120
REFERENCES
IEC
JEDEC
EIAJ
SOT121B
August 1986
α
EUROPEAN
PROJECTION
ISSUE DATE
97-06-28
14
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW76
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
August 1986
15