PHILIPS BLW77

DISCRETE SEMICONDUCTORS
DATA SHEET
BLW77
HF/VHF power transistor
Product specification
August 1986
Philips Semiconductors
Product specification
HF/VHF power transistor
DESCRIPTION
N-P-N silicon planar epitaxial
transistor intended for use in class-AB
or class-B operated high power
transmitters in the h.f. and v.h.f.
bands. The transistor presents
excellent performance as a linear
amplifier in the h.f. band. It is
resistance stabilized and is
guaranteed to withstand severe load
BLW77
mismatch conditions. Transistors are
delivered in matched hFE groups.
The transistor has a 1⁄2" flange
envelope with a ceramic cap. All
leads are isolated from the flange.
QUICK REFERENCE DATA
R.F. performance up to Th = 25 °C
MODE OF OPERATION
VCE
V
IC(ZS)
A
f
MHz
PL
W
Gp
dB
η
%
d3
dB
s.s.b. (class-AB)
28
0,1
1,6 − 28
15 − 130
(P.E.P.)
> 12
> 37,5(1)
< −30
c.w. (class-B)
28
−
87,5
130
typ. 7,5
typ.
75
−
Note
1. At 130 W P.E.P.
PIN CONFIGURATION
PINNING - SOT121B.
PIN
handbook, halfpage 4
1
3
DESCRIPTION
1
collector
2
emitter
3
base
4
emitter
2
MLA876
Fig.1 Simplified outline. SOT121B.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
August 1986
2
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW77
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage (VBE = 0)
peak value
VCESM
max.
70 V
Collector-emitter voltage (open base)
VCEO
max.
35 V
Emitter-base voltage (open collector)
VEBO
max.
4 V
Collector current (average)
IC(AV)
max.
12 A
Collector current (peak value); f > 1 MHz
ICM
max.
30 A
R.F. power dissipation (f > 1 MHz;); Tmb = 25 °C
Prf
max.
245 W
Storage temperature
Tstg
−65 to + 150 °C
Operating junction temperature
Tj
max.
200 °C
MGP521
102
handbook, halfpage
MGP522
300
handbook, halfpage
Prf
(W)
IC
(A)
ΙΙΙ
200
ΙΙ
derate by 1.11 W/K
Ι
derate by 0.82 W/K
10
Th = 70 °C
Tmb = 25 °C
100
1
0
1
10
VCE (V)
102
50
0
Th (°C)
100
I Continuous d.c. operation
II Continuous r.f. operation
III Short-time operation during mismatch
Fig.2 D.C. SOAR.
Fig.3
R.F. power dissipation; VCE ≤ 28 V; f ≥ 1 MHz.
THERMAL RESISTANCE
(dissipation = 100 W; Tmb = 90 °C, i.e. Th = 70 °C)
From junction to mounting base (d.c. dissipation)
Rth j-mb(dc)
=
1,03 K/W
From junction to mounting base (r.f. dissipation)
Rth j-mb(rf)
=
0,71 K/W
From mounting base to heatsink
Rth mb-h
=
0,2 K/W
August 1986
3
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW77
CHARACTERISTICS
Tj = 25 °C unless otherwise specified
Collector-emitter breakdown voltage
VBE = 0; IC = 50 mA
V(BR) CES
>
70 V
V(BR) CEO
>
35 V
V(BR)EBO
>
4 V
ICES
<
20 mA
Collector-emitter breakdown voltage
open base; IC = 100 mA
Emitter-base breakdown voltage
open collector; IE = 20 mA
Collector cut-off current
VBE = 0; VCE = 35 V
D.C. current
gain(1)
IC = 7 A; VCE = 5 V
hFE
15 to 80
D.C. current gain ratio of matched devices(1)
hFE1/hFE2
<
VCEsat
typ.
2 V
−IE = 7 A; VCB = 28 V
fT
typ.
320 MHz
−IE = 20 A; VCB = 28 V
fT
typ.
300 MHz
Cc
typ.
255 pF
IC = 100 mA; VCE = 28 V
Cre
typ.
175 pF
Collector-flange capacitance
Ccf
typ.
3 pF
IC = 7 A; VCE = 5 V
Collector-emitter saturation
1,2
voltage(1)
IC = 20 A; IB = 4 A
Transition frequency at f = 100
MHz(2)
Collector capacitance at f = 1 MHz
IE = Ie = 0; VCB = 28 V
Feedback capacitance at f = 1 MHz
Notes
1. Measured under pulse conditions: tp ≤ 300 µs; δ ≤ 0,02.
2. Measured under pulse conditions: tp ≤ 50 µs; δ ≤ 0,01.
MGP523
handbook,10
halfpage
IC
(A)
25 °C
Th = 70 °C
1
10−1
Fig.4 Typical values; VCE = 20 V.
August 1986
10−2
0.5
1
4
VBE (V)
1.5
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW77
MGP524
MGP525
75
1500
handbook, halfpage
handbook, halfpage
hFE
Cc
(pF)
VCE = 28 V
50
1000
5V
500
25
typ
0
0
10
20
IC (A)
0
30
20
0
Fig.5 Typical values; Tj = 25 °C.
VCB (V)
40
Fig.6 IE = Ie = 0; f = 1 MHz; Tj = 25 °C.
MGP526
400
handbook, full pagewidth
fT
(MHz)
typ
200
0
0
5
10
Fig.7 VCB = 28 V; f = 100 MHz; Tj = 25 °C.
August 1986
5
15
−IE (A)
20
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW77
APPLICATION INFORMATION
R.F. performance in s.s.b. class-AB operation (linear power amplifier)
VCE = 28 V; Th = 25 °C; f1 = 28,000 MHz; f2 = 28,001 MHz
OUTPUT POWER
Gp
W
dB
15 to 130 (P.E.P.)
> 12
handbook, full pagewidth
ηdt (%)
IC (A)
d5
IC(ZS)
dB
dB
A
< −30
< −30
0,1
at 130 W P.E.P.
> 37,5
< 6,2
C1
L5
C13
50 Ω
C2
L1
50 Ω
R3
C14
T.U.T.
R6
C3
L3
L2
C11
C5
C8
C9
C7
C10
R1
R7
L4
R4
+VCC
BD228
C6
BD443
C4
R2
R5
MGP527
Fig.8 Test circuit; s.s.b. class-AB.
August 1986
d3
6
C12
C15
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW77
List of components:
C1
=
27 pF ceramic capacitor (500 V)
C2
=
100 pF air dielectric trimmer (single insulated rotor type)
C3
=
180 pF polystyrene capacitor
C4
=
C6 = C9 = 100 nF polyester capacitor
C5
=
100 pF air dielectric trimmer (single non-insulated rotor type)
C7
=
C8 = 3,9 nF ceramic capacitor
C10
=
2,2 µF moulded metallized polyester capacitor
C11
=
2 × 180 pF polysterene capacitors in parallel
C12
=
3 × 56 pF and 33 pF ceramic capacitors in parallel (500 V)
C13
=
4 × 56 pF and 68 pF ceramic capacitors in parallel (500 V)
C14
=
360 pF air dielectric trimmer (single insulated rotor type)
C15
=
360 pF air dielectric trimmer (single non-insulated rotor type)
L1
=
88 nH; 3 turns Cu wire (1,0 mm); int. dia. 9,0 mm; length 6,1 mm; leads 2 × 7 mm
L2
=
L4 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640)
L3
=
L5 = 80 nH; 2,5 turns closely wound enamelled Cu wire (1,6 mm); int. dia. 10,0 mm; leads 2 × 7 mm
R1
=
470 Ω wirewound resistor (5,5 W)
R2
=
4,7 Ω wirewound potentiometer (3 W)
R3
=
0,55 Ω; parallel connection of 4 × 2,2 Ω carbon resistors (± 5%; 0,5 W each)
R4
=
45 Ω; parallel connection of 4 × 180 Ω wirewound resistors (5,5 W each)
R5
=
56 Ω (± 5%) carbon resistor (0,5 W)
R6
=
27 Ω (± 5%) carbon resistor (0,5 W)
R7
=
4,7 Ω (± 5%) carbon resistor (0,5 W)
August 1986
7
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW77
MGP528
−20
MGP529
30
60
handbook, halfpage
handbook, halfpage
ηdt
(%)
d3, d5
Gp
(dB)
(dB)
−40
ηdt
40
d3
d5
Gp
20
−60
0
20
50
100
P.E.P. (W)
10
0
150
0
50
100
P.E.P. (W)
0
150
VCE = 28 V; IC(ZS) = 100 mA; f1 = 28,000 MHz;
f2 = 28,001 MHz; Th = 25 °C; typical values.
VCE = 28 V; IC(ZS) = 100 mA; f1 = 28,000 MHz;
f2 = 28,001 MHz; Th = 25 °C; typical values.
Fig.9
Fig.10 Double-tone efficiency and power gain as a
function of output power.
Intermodulation distortion as a function of
output power.(1.)
1. Stated intermodulation distortion figures are referred
to the according level of either of the equal amplified
tones. Relative to the according peak envelope
powers these figures should be increased by 6 dB.
August 1986
8
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW77
MGP530
40
MGP531
5
handbook, halfpage
handbook, halfpage
ri
Gp
xi
(Ω)
(Ω)
(dB)
30
xi
10
ri
0
0
1
10
f (MHz)
102
0
−1
2.5
20
1
1
10
f (MHz)
−2
−3
102
VCE = 28 V; IC(ZS) = 100 mA; PL = 130 W;
Th = 25 °C; ZL = 2,5 Ω.
VCE = 28 V; IC(ZS) = 100 mA; PL = 130 W;
Th = 25 °C; ZL = 2,5 Ω.
Fig.11 Power gain as a function of frequency.
Fig.12 Input impedance (series components) as a
function of frequency.
Figs 11 and 12 are typical curves and hold for an
unneutralized amplifier in s.s.b. class-AB operation.
August 1986
9
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW77
MGP533
30
MGP534
7.5
handbook, halfpage
handbook, halfpage
Gp
(dB)
ri
xi
(Ω)
0
xi
(Ω)
20
5
−1
10
2.5
−2
ri
0
1
10
f (MHz)
0
102
1
VCE = 28 V; IC(ZS) = 100 mA; PL = 130 W; Th = 25 °C;
ZL = 2,5 Ω; neutralizing capacitor: 150 pF.
f (MHz)
−3
102
VCE = 28 V; IC(ZS) = 100 mA; PL = 130 W; Th = 25 °C;
ZL = 2,5 Ω; neutralizing capacitor: 150 pF.
Fig.13 Power gain as a function of frequency.
Fig.14 Input impedance (series components) as a
function of frequency.
13 and 14 are typical curves and hold for a push-pull
amplifier with cross-neutralization in s.s.b class-AB
operation.
August 1986
10
10
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW77
MGP532
250
handbook, halfpage
PLnom
(W P.E.P.)
(VSWR = 1)
200
150
Th =
50 °C
70 °C
90 °C
100
1
10
VSWR
102
The graph shows the permissible output power under nominal
conditions (VSWR = 1) as a function of the expected VSWR during
short-time mismatch conditions with heatsink temperatures as
parameter.
Fig.15 R.F. SOAR; s.s.b. class-AB operation;
f1 = 28,000 MHz; f2 = 28,001 MHz;
VCE = 28 V; Rth mb-h = 0,2 K/W.
August 1986
11
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW77
R.F. performance in c.w. operation (unneutralized common-emitter class-B circuit); Th = 25 °C
f (MHz)
VCE (V)
PL (W)
PS (W)
Gp (dB)
IC (A)
η (%)
zi (Ω)
YL (mS)
87,5
28
130
typ. 23,2
typ. 7,5
typ. 6,2
typ. 75
0,62 + j0,73
273 − j42
handbook, full pagewidth
,,
,, ,,
L5
C1
L1
50 Ω
L8
C3
C9
50 Ω
L2
T.U.T.
C2
C8
L6
C4
C7ab
C10
L4
C6
C5
L3
R2
R1
L7
+VCC
MGP535
Fig.16 Test circuit; c.w. class-B.
List of components:
C1
=
4 to 40 pF film dielectric trimmer (cat. no. 2222 809 07008)
C2
=
C9 = C10 = 7 to 100 pF film dielectric trimmer (cat. no. 2222 809 07015)
C3
=
C8 = 22 pF ceramic capacitor (500 V)
C4
=
4 × 82 pF ceramic capacitors in parallel (500 V)
C5
=
390 pF polystyrene capacitor
C6
=
220 nF polyester capacitor
C7a
=
2 × 10 pF ceramic capacitors in parallel (500 V)
C7b
=
2 × 8,2 pF ceramic capacitors in parallel (500 V)
L1
=
25 nH; 2 turns Cu wire (1,6 mm); int. dia. 5,0 mm; length 4,6 mm; leads 2 × 5 mm
L2
=
L5 = 2,4 nH; strip (12 mm × 6 mm); tap for L4 and L6 at 5 mm from transistor
L3
=
L7 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640)
L4
=
100 nH; 7 turns closely wound enamelled Cu wire (0,5 mm); int. dia. 3 mm; leads 2 × 5 mm
L6
=
46 nH; 2 turns Cu wire (2,0 mm); int. dia. 9,0 mm; length 6,0 mm; leads 2 × 5 mm
L8
=
44 nH; 2 turns Cu wire (2,0 mm); int. dia. 9,0 mm; length 6,7 mm; leads 2 × 5 mm
L2 and L5 are strips on a double Cu-clad printed-circuit board with epoxy fibre-glass dielectric.
R1
=
10 Ω (± 10%) carbon resistor
R2
=
10 Ω (± 10%) carbon resistor
Component layout and printed-circuit board for 87,5 MHz test circuit are shown in Fig.17.
August 1986
12
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW77
116
handbook, full pagewidth
65
L7
L3
R2
R1
C6
L6
L4
C1
C5
C7a
L1
L2
C2
C3
+VCC
L5
L8
C4
C8
C9
C7b
C10
rivet
strip
MGP536
Fig.17 Component layout and printed-circuit board for 87,5 MHz test circuit.
The circuit and the components are situated on one side of the epoxy fibre-glass board, the other side being fully
metallized to serve as earth. Earth connections are made by means of hollow rivets, whilst under the emitter leads Cu
straps are used for a direct contact between upper and lower sheets.
August 1986
13
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW77
MGP537
MGP538
250
PL
100
10
handbook, halfpage
handbook, halfpage
(W)
η
Gp
200
η
(%)
(dB)
Gp
150
typ
50
5
100
50
0
0
0
25
50
75
PS (W)
0
Fig.18 VCE = 28 V; f = 87,5 MHz; Th = 25 °C.
handbook, halfpage
PLnom
(W)
(VSWR = 1)
125
Th =
50 °C
70 °C
90 °C
75
1
10
VSWR
102
The graph shows the permissible output power under
nominal conditions (VSWR = 1) as a function of the
expected VSWR during short-time mismatch
conditions with heatsink temperatures as parameter.
Fig.20 R.F. SOAR; c.w. class-B operation;
f = 87,5 MHz; VCE = 28 V;
Rth mb-h = 0,2 K/W.
August 1986
200
PL (W)
0
300
Fig.19 VCE = 28 V; f = 87,5 MHz; Th = 25 °C;
typical values.
MGP539
175
100
14
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW77
MGP541
MGP540
5
2
handbook, halfpage
handbook, halfpage
0.5
RL
CL
(nF)
RL
(Ω)
ri, xi
(Ω)
0
ri
0
CL
0
xi
−5
−2
−10
0
100
200
f (MHz)
Fig.21 VCE = 28 V; PL =130 W; Th = 25 °C; typical
values.
MGP542
20
Gp
(dB)
typ
10
0
50
100
f (MHz)
150
Fig.23 VCE = 28 V; PL =130 W; Th = 25 °C.
August 1986
0
100
f (MHz)
−1
200
Fig.22 VCE = 28 V; PL =130 W; Th = 25 °C; typical
values.
handbook, halfpage
0
−0.5
15
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW77
PACKAGE OUTLINE
Flanged ceramic package; 2 mounting holes; 4 leads
SOT121B
D
A
F
q
C
B
U1
c
H
b
L
4
α
w2 M C
3
A
D1
U2
p
U3
w1 M A B
1
2
H
Q
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
mm
7.27
6.17
5.82
5.56
0.16
0.10
inches
0.286
0.243
0.229 0.006
0.219 0.004
OUTLINE
VERSION
D
D1
12.86 12.83
12.59 12.57
F
H
L
p
Q
q
U1
U2
U3
w1
w2
2.67
2.41
28.45
25.52
7.93
6.32
3.30
3.05
4.45
3.91
18.42
24.90
24.63
6.48
6.22
12.32
12.06
0.51
1.02
0.175
0.725
0.154
0.98
0.97
0.255
0.245
0.485
0.475
0.02
0.04
0.506 0.505 0.105 1.120
0.496 0.495 0.095 1.005
45°
0.312 0.130
0.249 0.120
REFERENCES
IEC
JEDEC
EIAJ
SOT121B
August 1986
α
EUROPEAN
PROJECTION
ISSUE DATE
97-06-28
16
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW77
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
August 1986
17