TPCF8A01 TOSHIBA Multi-Chip Device Silicon N Channel MOS Type (U-MOS III) / Schottky Barrier Diode TPCF8A01 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 38 mΩ (typ.) • High forward transfer admittance: |Yfs| = 5.4 S (typ.) • Low leakage current: IDSS = 10 µA (max) (VDS = 20 V) • Enhancement mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 200 µA) Low forward voltage: VFM(2) = 0.46V(typ.) • Absolute Maximum Ratings MOSFET (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 20 V Drain-gate voltage (RGS = 20 kΩ) VDGR 20 V V VGSS ±12 DC (Note 1) ID 3 Pulse (Note 1) IDP 12 (Note 4) EAS 1.46 mJ Avalanche current IAR 1.5 A Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) EAR 0.11 mJ Gate-source voltage Drain current Single pulse avalanche energy A ― JEITA ― TOSHIBA 2-3U1C Weight: 0.011 g (typ.) SBD (Ta = 25°C) Characteristics JEDEC Symbol Rating Unit Repetitive peak reverse voltage VRRM 20 V Average forward current (Note 2a, 6) IF(AV) 1.0 A Peak one cycle surge forward current (non-repetitive) IFSM 7(50Hz) A Circuit Configuration 8 7 6 5 1 2 3 4 Absolute Maximum Ratings for MOSFET and SBD (Ta = 25°C) Characteristics Single-device operation Drain power (Note 3a) dissipation (t = 5 s) (Note 2a) Single-device value at dual operation (Note 3b) Single-device operation Drain power (Note 3a) dissipation (t = 5 s) (Note 2b) Single-device value at dual operation (Note 3b) Symbol Rating PD (1) 1.35 PD (2) 1.12 PD (1) 0.53 PD (2) 0.33 Unit W Channel temperature Tch Storage temperature range Tstg 150 -55~150 °C °C Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5), (Note 6) and (Note 7): See the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2007-01-16 TPCF8A01 Thermal Characteristics for MOSFET and SBD Characteristics Single-device operation Thermal resistance, (Note 3a) channel to ambient (t = 5 s) (Note 2a) Single-device value at dual operation (Note 3b) Single-device operation Thermal resistance, (Note 3a) channel to ambient (t = 5 s) (Note 2b) Single-device value at dual operation (Note 3b) Symbol Max Rth (ch-a) (1) 92.6 Rth (ch-a) (2) 111.6 Rth (ch-a) (1) 235.8 Rth (ch-a) (2) 378.8 Unit °C/W °C/W This transistor is an electrostatic-sensitive device. Please handle with caution. Schottky barrier diodes have large-reverse-current-leakage characteristic compared to other rectifier products. This current leakage and improper operating temperature or voltage may cause thermal runaway. Please take forward and reverse loss into consideration during design. Marking (Note 7) Lot code (month) Part No. (or abbreviation code) Pin #1 Lot No. F7A Product-specific code Lot code (year) A line indicates lead (Pb)-free package or lead (Pb)-free finish. Note 1: Ensure that the channel temperature does not exceed 150℃. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) 25.4 25.4 FR-4 25.4 × 25.4 × 0.8 (unit: mm) (a) FR-4 25.4 × 25.4 × 0.8 (unit: mm) (b) Note 3: a) The power dissipation and thermal resistance values are shown for a single device (During single-device operation, power is only applied to one device.). b) The power dissipation and thermal resistance values are shown for a single device (During dual operation, power is evenly applied to both devices.). Note 4: VDD = 16 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω, IAR = 1.5 A Note 5: Repetitive rating: pulse width limited by maximum channel temperature o Note 6: Rectangular waveform (α=180 ), VR =15V. Note 7: ●on the lower left of the marking indicates Pin 1. 2 2007-01-16 TPCF8A01 Electrical Characteristics (Ta = 25°C) MOSFET IGSS Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance ⎯ ±10 µA µA ⎯ ⎯ 10 ⎯ ⎯ V (BR) DSX ID = 10 mA, VGS = -12 V 8 ⎯ ⎯ Vth VDS = 10 V, ID = 200 µA 0.5 ⎯ 1.2 RDS (ON) VGS = 2.0 V, ID = 1.5 A ⎯ 62 100 RDS (ON) VGS = 2.5 V, ID = 1.5 A ⎯ 50 66 RDS (ON) VGS = 4.5 V, ID = 1.5 A ⎯ 38 49 |Yfs| VDS = 10 V, ID = 1.5 A 2.7 5.4 ⎯ ⎯ 590 ⎯ VDS = 10 V, VGS = 0 V, f = 1 MHz ⎯ 70 ⎯ ⎯ 85 ⎯ ⎯ 3.0 ⎯ ⎯ 7.5 ⎯ ⎯ 4.4 ⎯ ⎯ 26 ⎯ ⎯ 7.5 ⎯ ⎯ 1.3 ⎯ ⎯ 2.1 ⎯ Coss Total gate charge (gate-source plus gate-drain) ⎯ 20 Output capacitance Turn-off time Unit VDS = 20 V, VGS = 0 V Ciss Fall time Max ID = 10 mA, VGS = 0 V Crss Switching time Typ. IDSS Reverse transfer capacitance Turn-on time VGS = ±10 V, VDS = 0 V Min V (BR) DSS Input capacitance Rise time Test Condition tr ton VGS 0V tf toff Qg Gate-source charge1 Qgs1 Gate-drain (“miller”) charge Qgd V V mΩ S pF ID = 1.5 A 5V RL = 0.67Ω Gate leakage current Symbol 4.7 Ω Characteristics VDD ∼ − 10 V Duty < = 1%, tw = 10 µs VDD ∼ − 16 V, VGS = 5 V, ID = 3.0 A ns nC MOSFET Source-Drain Ratings and Characteristics Characteristics Drain reverse current Pulse (Note 1) Forward voltage (diode) Symbol Test Condition Min Typ. Max Unit IDRP ⎯ ⎯ ⎯ 12 A ⎯ ⎯ -1.2 V Min Typ. Max Unit VDSF IDR = 3.0 A, VGS = 0 V SBD Characteristics Peak forward voltage Repetitive peak reverse current Junction capacitance Symbol Test Condition VFM(1) IFM = 0.7 A ⎯ 0.43 ⎯ V VFM(2) IFM = 1.0 A ⎯ 0.46 0.49 V VRRM = 20 V ⎯ ⎯ 50 A VR = 10 V, f = 1 MHz ⎯ 54 ⎯ pF IRRM Cj 3 2007-01-16 TPCF8A01 MOSFET ID – VDS ID – VDS 10 5 4 6 2 1.9 5 Ta = 25°C Pulse Test 2.1 Pulse Test (A) 8 ID 1.8 3 1.7 2 Drain current ID Common source 3 Ta = 25°C 4 Drain current 10 Common source 1.6 1.5 1 2 (A) 10 6 1.9 4 1.8 1.7 2 1.6 1.5 VGS = 1.4 V 0 0 0.4 0.2 0.6 Drain-source voltage 0.8 VDS VGS = 1.4V 0 0 1 1 (V) 3 2 Drain-source voltage ID – VGS 4 VDS VDS – VGS Common source (V) Common source VDS = -10 V 8 2 100 Ta = 25℃ 0.8 Ta = −55°C 0.6 0.4 1 1.5 0.2 25 0 0 Pulse Test VDS Drain-source voltage ID Drain current (A) Pulse Test 4 2 3 4 VGS 0 0 5 (V) 2 4 6 Gate-source voltage ⎪Yfs⎪ – ID 8 VGS 10 (V) RDS (ON) – ID 1000 100 Common source Common source VDS = -10 V Ta = 25°C Pulse Test Pulse Test Drain-source ON resistance RDS (ON) (mΩ) Forward transfer admittance ⎪Yfs⎪ (S) ID = 3 A 0.75 Gate-source voltage Ta = −55°C 10 25 100 1 0.1 (V) 1 10 6 5 1 Drain current ID (A) VGS = 4.5V 2.5 10 1 0.1 10 2.0 100 1 Drain current ID 4 10 (A) 2007-01-16 TPCF8A01 RDS (ON) – Ta IDR – VDS 120 10 10 ID = 1.5A,0.75A 80 ID = 3A 60 VGS = 2.5 V ID = 3A,1.5A,0.75A 40 20 ID = 3A,1.5A,0.75A VGS = 4.5 V 3 IDR VGS = 2.0 V 2.0 5 (A) Pulse Test 100 Drain reverse current Drain-source ON resistance RDS (ON) (m Ω) Common source 2.5 VGS = 0 V 1 0.5 0.3 Common source Ta = 25°C Pulse Test 0 −80 −40 0 40 80 Ambient temperature 120 Ta 0.1 0 160 (°C) −0.8 −0.4 Drain-source voltage Capacitance – VDS VDS (V) Vth – Ta 1000 1.2 1 C Gate threshold voltage Vth (V) (pF) Ciss Coss 100 Crss Common source VGS = 0 V 0.8 0.6 0.4 VDS = -10 V 0.2 f = 1 MHz Common source ID = -200μA Pulse Test Ta = 25°C 10 0.1 1 3 5 Drain-source voltage 10 30 50 VDS 0 −80 100 (V) −40 0 40 80 Ambient temperature Ta 120 (°C) Dynamic input / output characteristics PD – Ta 20 2 t=5s Device mounted on a glass-epoxy board (a) (Note 2a) 6 Device mounted on a glass-epoxy board (b) (Note 2b) (4) Single-device value at dual operation (Note 3b) ｔ＝5S (2) Drain-source voltage 1.2 0.8 (3) 0.4 4 VDS VDS (3) Single-device operation (Note 3a) (1) 16 (4) VGS (V) (2) Single-device value at dual operation (Note 3b) (V) (1) Single-device operation (Note 3a) 1.6 Drain power dissipation PD (W) 160 8 VDD = 16 V 12 4 VGS 8 Common source 2 ID = -3 A 4 Ta = 25°C Gate-source voltage Capacitance −1.2 PULSE TEST 0 0 40 80 Ambient temperature 120 Ta 0 0 160 (°C) 2 4 Total gate charge 5 6 Qg 8 0 10 (nC) 2007-01-16 TPCF8A01 rth – tw 1000 (4) (3) Transient thermal impedance rth (°C/W) (2) (1) 100 10 Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) 1 1m 10 m 100 m 1 Pulse width 10 100 1000 tw (s) Safe operating Area ID max (pulse)* 10 1 ms* Drain current ID (A) 100 10 ms* 1 ※ Single pulse Ta=25℃ Curves must be derated linearly with increase in temperature. 0.1 0.1 1 Drain-source voltage VDSS max 10 VDS 100 (V) 6 2007-01-16 TPCF8A01 SBD iF – v F PF (AV) – IF (AV) 10 Average forward power dissipation PF (AV) (W) Instantaneous forward current iF (A) 0.8 Tj=150℃ 1 125℃ 75℃ 25℃ 0.1 0.7 DC 0.6 180° 120° 0.5 α=60° 0.4 Rectangular waveform 0.3 0.2 0° α 0.1 0.01 0.0 0.0 0.2 0.4 0.8 0.6 1.0 Instantaneous forward voltage 1.4 1.2 vF 0.0 (V) 0.2 0.4 0.6 Ta max – IF (AV) 140 0° α I 360° Conduction angle:α V R =15V 80 60 α=60° 40 180° 120° 1.4 (4) IF(AV) 100 1.2 1.6 100 Rectangular waveform Single-device operation (Note 3a) 120 1.0 rth– tw Transient thermal impedance rth (°C/W) Maximum allowable lead temperature Ta max (°C) 160 0.8 Average forward current IF (AV) (A) Device mounted on a glass-epoxy board (a) (Note 2a) DC (3) (2) (1) 100 Device mounted on a glass-epoxy board (a)(Note 2a) 10 (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b)(Note 2b) (3) Single-device operation (Note 3a) 20 (4) Single-device value at dual operation (Note 3b) 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1 1m 1.6 10 m 100 1 Pulse width Average forward current IF (AV) (A) Surge forward current (non-repetitive) 10 tw 100 1000 (s) Cj – VR (typ.) 1000 10 f=1MHz Ta=25℃ Ta=25℃ f=50Hz (pF) 9 7 Cj 8 6 Junction capacitance Peak surge forward current IFSM (A) 360° Conduction angle: α 5 4 3 2 100 1 10 0 1 10 100 1 Number of cycles 10 Reverse voltage 7 100 VR (V) 2007-01-16 TPCF8A01 IR – Tj PR (AV) – VR (typ.) 0.06 10 Rectangular waveform Pulse test Average reverse power dissipation PR (AV) (W) IR (mA) 0° 1 Reverse current 0.1 V R=20V 0.01 10V 5V 0.001 (typ.) 360° 0.05 DC VR 0.04 300° α Conduction angle:α Tj=125℃ 240° 0.03 180° 120° 0.02 60° 0.01 0.00 0.0001 0 20 40 60 80 100 Junction temperature Tj 120 140 160 0 (°C) 5 10 Reverse voltage 8 15 VR 20 (V) 2007-01-16 TPCF8A01 RESTRICTIONS ON PRODUCT USE 030619EAA • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 9 2007-01-16