MJE15034 NPN, MJE15035 PNP Preferred Device Complementary Silicon Plastic Power Transistors TO−220, NPN & PNP Devices http://onsemi.com . . . designed for use as high−frequency drivers in audio amplifiers. • hFE = 100 (Min) @ IC = 0.5 Adc • • • • • 4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 350 VOLTS 50 WATTS = 10 (Min) @ IC = 2.0 Adc Collector−Emitter Sustaining Voltage − VCEO(sus) = 350 Vdc (Min) − MJE15034, MJE15035 High Current Gain − Bandwidth Product fT = 30 MHz (Min) @ IC = 500 mAdc TO−220AB Compact Package Epoxy meets UL 94 V−0 @ 0.125 in ESD Ratings: Machine Model: C Human Body Model: 3B MARKING DIAGRAM & PIN ASSIGNMENT MAXIMUM RATINGS Rating Collector−Emitter Voltage 4 Symbol MJE15034 MJE15035 Unit VCEO 350 Vdc Collector−Base Voltage VCB 350 Vdc Emitter−Base Voltage VEB 5.0 Vdc Collector Current − Continuous − Peak IC 4.0 8.0 Adc Base Current IB 1.0 Adc Total Power Dissipation @ TC = 25C Derate above 25C PD 50 0.40 Watts W/C Total Power Dissipation @ TA = 25C Derate above 25C PD 2.0 0.016 Watts W/C TJ, Tstg – 65 to + 150 C Symbol Max Unit Operating and Storage Junction Temperature Range 1 THERMAL CHARACTERISTICS Characteristic TO−220AB CASE 221A STYLE 1 Thermal Resistance, Junction to Case RθJC 2.5 C/W Thermal Resistance, Junction to Ambient RθJA 62.5 C/W 2 STYLE 1: PIN 1. 2. 3. 4. 3 MJE1503x LLYWW BASE COLLECTOR EMITTER COLLECTOR MJE1503x LL Y WW = Device Code = Location Code = Year = Work Week ORDERING INFORMATION Package Shipping MJE15034 TO−220AB 50 Units/Rail MJE15035 TO−220AB 50 Units/Rail Device Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2003 November, 2003 − Rev. 2 1 Publication Order Number: MJE15034/D MJE15034 NPN, MJE15035 PNP 10 IC, COLLECTOR CURRENT (AMPS) PD, POWER DISSIPATION (WATTS) TA TC 3.0 60 2.0 40 TC TA 1.0 20 0 0 0 40 20 60 100 80 120 140 160 100mS DC 1.0 0.1 0.01 1.0 T, TEMPERATURE (°C) 10 100 1000 VCE, COLLECTOR−EMITTER VOLTAGE (V) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ Figure 1. Power Derating Figure 2. Active Region Safe Operating Area ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) 350 − Vdc OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 1) (IC = 10 mAdc, IB = 0) Collector Cutoff Current (VCB = 350 Vdc, IE = 0) ICBO − 10 µAdc Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO − 10 µAdc 100 100 50 10 − − − − − ON CHARACTERISTICS (Note 1) DC Current Gain hFE (IC = 0.1 Adc, VCE = 5.0 Vdc) (IC = 0.5 Adc, VCE = 5.0 Vdc) (IC = 1.0 Adc, VCE = 5.0 Vdc) (IC = 2.0 Adc, VCE = 5.0 Vdc) Collector−Emitter Saturation Voltage Base−Emitter On Voltage (IC = 1.0 Adc, IB = 0.1 Adc) VCE(sat) − 0.5 Vdc (IC = 1.0 Adc, VCE = 5.0 Vdc) VBE(on) − 1.0 Vdc fT 30 − MHz DYNAMIC CHARACTERISTICS Current Gain − Bandwidth Product (Note 2) (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz) r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%. 2. fT = hfe• ftest. 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 0.02 0.03 0.02 0.01 0.01 0.01 0.02 SINGLE PULSE 0.05 P(pk) ZθJC(t) = r(t) RθJC RθJC = 2.5°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) ZθJC(t) 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 t, TIME (ms) Figure 3. Thermal Response http://onsemi.com 2 20 t1 t2 DUTY CYCLE, D = t1/t2 50 100 200 500 1.0 k MJE15034 NPN, MJE15035 PNP 1000 1000 TJ = 150°C hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN TJ = 150°C 25°C 100 −40°C 10 1.0 0.01 0.1 1.0 25°C −40°C 100 10 1.0 0.01 10 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 4. DC Current Gain, VCE = 5.0 V NPN MJE15034 Figure 5. DC Current Gain, VCE = 5.0 V PNP MJE15035 1000 10 1000 TJ = 150°C 100 hFE, DC CURRENT GAIN 25°C −40°C 10 VCE, COLLECTOR−EMITTER VOLTAGE (V) 1.0 0.01 0.1 1.0 100 10 1.0 0.01 10 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 6. DC Current Gain, VCE = 20 V NPN MJE15034 Figure 7. DC Current Gain, VCE = 20 V PNP MJE15035 10 IC/IB = 10 1.0 25°C TJ = 150°C 0.1 −40°C 0.01 0.01 25°C −40°C VCE, COLLECTOR−EMITTER VOLTAGE (V) hFE, DC CURRENT GAIN TJ = 150°C 0.1 1.0 10 10 IC/IB = 10 1.0 −40°C 0.1 TJ = 150°C 25°C 0.01 0.01 IC, COLLECTOR CURRENT (AMPS) 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) Figure 9. VCE(sat) PNP MJE15035 Figure 8. VCE(sat) NPN MJE15034 http://onsemi.com 3 10 10 MJE15034 NPN, MJE15035 PNP 10 IC/IB = 10 1.0 BASE−EMITTER VOLTAGE (V) BASE−EMITTER VOLTAGE (V) 10 −40°C 25°C TJ = 150°C 0.1 0.01 0.1 1.0 IC/IB = 10 −40°C 1.0 25°C TJ = 150°C 0.1 0.01 10 0.1 IC, COLLECTOR CURRENT (AMPS) Figure 11. VBE(sat) PNP MJE15035 VBE(on), BASE−EMITTER VOLTAGE (V) VBE(on), BASE−EMITTER VOLTAGE (V) 1.2 1.0 −40°C 0.6 25°C 0.4 TJ = 150°C 0.2 0.0 0.01 0.1 1.0 10 1.4 1.2 1.0 −40°C 0.8 0.6 25°C 0.4 TJ = 150°C 0.2 0.0 0.01 fT, CURRENT BANDWIDTH PRODUCT (MHz) fT, CURRENT BANDWIDTH PRODUCT (MHz) 80 TJ = 25°C f test = 1 MHz 50 40 30 VCE= 10 V 20 10 0 0.001 0.01 0.1 1.0 10 Figure 13. VBE(on) PNP MJE15035 Figure 12. VBE(on) NPN MJE15034 60 0.1 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) 70 10 IC, COLLECTOR CURRENT (AMPS) Figure 10. VBE(sat) NPN MJE15034 0.8 1.0 1.0 10 100 80 TJ = 25°C f test = 1 MHz 60 40 VCE= 10 V 20 0 0.001 0.01 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 15. Typical Current Gain Bandwidth Product PNP MJE15035 Figure 14. Typical Current Gain Bandwidth Product NPN MJE15034 http://onsemi.com 4 MJE15034 NPN, MJE15035 PNP PACKAGE DIMENSIONS TO−220 THREE−LEAD TO−220AB CASE 221A−09 ISSUE AA SEATING PLANE −T− B C F T S 4 A Q 1 2 3 U H K Z L R V J G D N STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR http://onsemi.com 5 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 −−− −−− 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 −−− −−− 2.04 MJE15034 NPN, MJE15035 PNP ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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